JPS6431410A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6431410A
JPS6431410A JP18864587A JP18864587A JPS6431410A JP S6431410 A JPS6431410 A JP S6431410A JP 18864587 A JP18864587 A JP 18864587A JP 18864587 A JP18864587 A JP 18864587A JP S6431410 A JPS6431410 A JP S6431410A
Authority
JP
Japan
Prior art keywords
substrate
plane
reevaporation
plane orientation
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18864587A
Other languages
Japanese (ja)
Other versions
JP2708156B2 (en
Inventor
Toshiro Hayakawa
Naohiro Suyama
Kousei Takahashi
Masafumi Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62188645A priority Critical patent/JP2708156B2/en
Publication of JPS6431410A publication Critical patent/JPS6431410A/en
Application granted granted Critical
Publication of JP2708156B2 publication Critical patent/JP2708156B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

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  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To suppress the reevaporation of In even though growth temperature is raised and obtain excellent crystalline properties free from lattice mismatching, by forming a chemical compound semiconductor layer containing In at least through epitaxial growth on a substrate where its principal plane orientation is a specific one. CONSTITUTION:A semiconductor device is formed by forming a chemical compound semiconductor layer containing In at least through an epitaxial growth on a substrate where its principal plane bearing is substantially a plane (111). When the lower limit of a substrate temperature at which lattice mismatching starts taking place by reevaporation of In is compared with the limit where its substrate plane has a plane orientation (100) and is evaluated, reevaporation of In is suppressed and no lattice mismatching develops, if a substrate whose plane has a principal plane orientation (111) is used, even though an epitaxial growth temperature of substrate is higher than that of the plane orientation (100).
JP62188645A 1987-07-27 1987-07-27 Method for manufacturing semiconductor device Expired - Fee Related JP2708156B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62188645A JP2708156B2 (en) 1987-07-27 1987-07-27 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62188645A JP2708156B2 (en) 1987-07-27 1987-07-27 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6431410A true JPS6431410A (en) 1989-02-01
JP2708156B2 JP2708156B2 (en) 1998-02-04

Family

ID=16227341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62188645A Expired - Fee Related JP2708156B2 (en) 1987-07-27 1987-07-27 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2708156B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148247A (en) * 1984-08-16 1986-03-08 Nec Corp Fault detection system of data transfer system
JPS6288318A (en) * 1985-10-14 1987-04-22 Sharp Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148247A (en) * 1984-08-16 1986-03-08 Nec Corp Fault detection system of data transfer system
JPS6288318A (en) * 1985-10-14 1987-04-22 Sharp Corp Semiconductor device

Also Published As

Publication number Publication date
JP2708156B2 (en) 1998-02-04

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees