JPS6431459A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS6431459A JPS6431459A JP62187330A JP18733087A JPS6431459A JP S6431459 A JPS6431459 A JP S6431459A JP 62187330 A JP62187330 A JP 62187330A JP 18733087 A JP18733087 A JP 18733087A JP S6431459 A JPS6431459 A JP S6431459A
- Authority
- JP
- Japan
- Prior art keywords
- region
- diffused
- groove
- diffused region
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the collector series resistance of a transistor by providing a groove on the main surface of a silicon island, and diffusing an impurity in the groove to form an emitter diffused region and a base diffused region. CONSTITUTION:A silicon island 4 is formed through a silicon oxide film 3 on one side face of a polycrystalline silicon substrate 7, a V-shaped groove is formed by anisotropically etching on the main surface side, an impurity is diffused in the groove, and a base diffused region 2 and an emitter diffused region 6 are formed. Further, a collector diffused region 8 on the upper face of a silicon island 4 in which a base diffused region 2 is not formed, and metal electrodes 1 are connected to the predetermined parts of the diffused regions. Accordingly, the region 2 can be approached to a high concentration buried layer 5, and the approaching part can be formed in a wide range. Therefore, an n-type region having a relatively high resistance value interposed between the region 2 and the layer 5 is narrowed, thereby reducing a collector series resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62187330A JPS6431459A (en) | 1987-07-27 | 1987-07-27 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62187330A JPS6431459A (en) | 1987-07-27 | 1987-07-27 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6431459A true JPS6431459A (en) | 1989-02-01 |
Family
ID=16204112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62187330A Pending JPS6431459A (en) | 1987-07-27 | 1987-07-27 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6431459A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008117243A (en) * | 2006-11-07 | 2008-05-22 | Shinsedai Kk | Bar code reader |
-
1987
- 1987-07-27 JP JP62187330A patent/JPS6431459A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008117243A (en) * | 2006-11-07 | 2008-05-22 | Shinsedai Kk | Bar code reader |
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