JPS6432484A - Forming method for ion implantation transfer path - Google Patents
Forming method for ion implantation transfer pathInfo
- Publication number
- JPS6432484A JPS6432484A JP62186686A JP18668687A JPS6432484A JP S6432484 A JPS6432484 A JP S6432484A JP 62186686 A JP62186686 A JP 62186686A JP 18668687 A JP18668687 A JP 18668687A JP S6432484 A JPS6432484 A JP S6432484A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- ion implantation
- wafer
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form a taper with high reproducibility by executing ion beam etching so that a beam hits obliquely against a wafer, in a specific gas atmosphere. CONSTITUTION:An ion implantation mask material 15 such as an SiO2 film/a metallic film, or a silicon resin film/a metallic film, or a polyimide resin film/a TiOx film, etc., is formed, and the metallic film and the TiOx film are brought to ion beam etching so that a beam hits vertically against a wafer by using a resist pattern 16 as a mask and using Ar gas. Subsequently, by using a resist/ metallic pattern 17 or a resist/TiOx pattern as a mask, reactive ion beam etching is executed so that a beam hits obliquely against the wafer, by using 'Freon(R)' gas, and oxygen gas, in case of the SiO2 film 13 or the silicon compound resin film, and the polyimide resin, respectively, and plural pieces of tapered patterns are obtained. Next, in a state that a desired pattern 18 among these patterns has been covered, a tapered part of other pattern is removed. In such a way, a tapered ion implantation layer is obtained with high reproducibility.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62186686A JPS6432484A (en) | 1987-07-28 | 1987-07-28 | Forming method for ion implantation transfer path |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62186686A JPS6432484A (en) | 1987-07-28 | 1987-07-28 | Forming method for ion implantation transfer path |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6432484A true JPS6432484A (en) | 1989-02-02 |
Family
ID=16192864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62186686A Pending JPS6432484A (en) | 1987-07-28 | 1987-07-28 | Forming method for ion implantation transfer path |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6432484A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140389A (en) * | 2015-08-11 | 2015-12-09 | 上海华虹宏力半导体制造有限公司 | Manufacturing method for triaxial magnetic sensor |
-
1987
- 1987-07-28 JP JP62186686A patent/JPS6432484A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140389A (en) * | 2015-08-11 | 2015-12-09 | 上海华虹宏力半导体制造有限公司 | Manufacturing method for triaxial magnetic sensor |
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