JPS6436062A - Large scale integratable memory cell - Google Patents

Large scale integratable memory cell

Info

Publication number
JPS6436062A
JPS6436062A JP63167643A JP16764388A JPS6436062A JP S6436062 A JPS6436062 A JP S6436062A JP 63167643 A JP63167643 A JP 63167643A JP 16764388 A JP16764388 A JP 16764388A JP S6436062 A JPS6436062 A JP S6436062A
Authority
JP
Japan
Prior art keywords
memory cell
oxide film
side edge
trench
gate oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63167643A
Other languages
English (en)
Inventor
Ritsushiyu Rotaaru
Chiireruto Rainharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS6436062A publication Critical patent/JPS6436062A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Nonmetallic Welding Materials (AREA)
  • Seeds, Soups, And Other Foods (AREA)
  • Holo Graphy (AREA)
  • Non-Volatile Memory (AREA)
JP63167643A 1987-07-10 1988-07-04 Large scale integratable memory cell Pending JPS6436062A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3722939 1987-07-10

Publications (1)

Publication Number Publication Date
JPS6436062A true JPS6436062A (en) 1989-02-07

Family

ID=6331369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63167643A Pending JPS6436062A (en) 1987-07-10 1988-07-04 Large scale integratable memory cell

Country Status (7)

Country Link
US (1) US4905193A (ja)
EP (1) EP0298251B1 (ja)
JP (1) JPS6436062A (ja)
KR (1) KR890002884A (ja)
AT (1) ATE110189T1 (ja)
DE (1) DE3851102D1 (ja)
HK (1) HK59796A (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3324832B2 (ja) * 1993-07-28 2002-09-17 三菱電機株式会社 半導体装置およびその製造方法
US7488647B1 (en) * 2005-08-11 2009-02-10 National Semiconductor Corporation System and method for providing a poly cap and a no field oxide area to prevent formation of a vertical bird's beak structure in the manufacture of a semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6156444A (ja) * 1984-08-28 1986-03-22 Toshiba Corp 半導体装置
JPS6167954A (ja) * 1984-09-11 1986-04-08 Fujitsu Ltd 半導体記憶装置とその製造方法
JPS62120067A (ja) * 1985-11-20 1987-06-01 Fujitsu Ltd ダイナミツクランダムアクセスメモリセル
JPS62136069A (ja) * 1985-12-10 1987-06-19 Hitachi Ltd 半導体装置およびその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154256A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置
JPS59161860A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd 半導体メモリ装置
JPS60152058A (ja) * 1984-01-20 1985-08-10 Toshiba Corp 半導体記憶装置
JPS60189964A (ja) * 1984-03-12 1985-09-27 Hitachi Ltd 半導体メモリ
US4658283A (en) * 1984-07-25 1987-04-14 Hitachi, Ltd. Semiconductor integrated circuit device having a carrier trapping trench arrangement
JPS61135151A (ja) * 1984-12-05 1986-06-23 Mitsubishi Electric Corp 半導体記憶装置
US4774556A (en) * 1985-07-25 1988-09-27 Nippondenso Co., Ltd. Non-volatile semiconductor memory device
US4751558A (en) * 1985-10-31 1988-06-14 International Business Machines Corporation High density memory with field shield
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPH0746700B2 (ja) * 1986-02-18 1995-05-17 松下電子工業株式会社 １トランジスタ型ｄｒａｍ装置
US4801989A (en) * 1986-02-20 1989-01-31 Fujitsu Limited Dynamic random access memory having trench capacitor with polysilicon lined lower electrode
US4761385A (en) * 1987-02-10 1988-08-02 Motorola, Inc. Forming a trench capacitor
JP2759586B2 (ja) * 1992-11-24 1998-05-28 株式会社ツムラ 製袋包装充填機の計量充填装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6156444A (ja) * 1984-08-28 1986-03-22 Toshiba Corp 半導体装置
JPS6167954A (ja) * 1984-09-11 1986-04-08 Fujitsu Ltd 半導体記憶装置とその製造方法
JPS62120067A (ja) * 1985-11-20 1987-06-01 Fujitsu Ltd ダイナミツクランダムアクセスメモリセル
JPS62136069A (ja) * 1985-12-10 1987-06-19 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
HK59796A (en) 1996-04-12
EP0298251A2 (de) 1989-01-11
KR890002884A (ko) 1989-04-11
EP0298251A3 (en) 1989-07-19
ATE110189T1 (de) 1994-09-15
US4905193A (en) 1990-02-27
EP0298251B1 (de) 1994-08-17
DE3851102D1 (de) 1994-09-22

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