JPS6437497A - Method for growing compound semiconductor crystal - Google Patents

Method for growing compound semiconductor crystal

Info

Publication number
JPS6437497A
JPS6437497A JP19261287A JP19261287A JPS6437497A JP S6437497 A JPS6437497 A JP S6437497A JP 19261287 A JP19261287 A JP 19261287A JP 19261287 A JP19261287 A JP 19261287A JP S6437497 A JPS6437497 A JP S6437497A
Authority
JP
Japan
Prior art keywords
vessel
melt
group element
crystal
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19261287A
Other languages
Japanese (ja)
Other versions
JP2589985B2 (en
Inventor
Keigo Hoshikawa
Hideo Nakanishi
Hiroki Koda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62192612A priority Critical patent/JP2589985B2/en
Publication of JPS6437497A publication Critical patent/JPS6437497A/en
Application granted granted Critical
Publication of JP2589985B2 publication Critical patent/JP2589985B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prevent an element having high vapor pressure from dispersion, solidification and deposition to each part in a sealed vessel and grow the titled crystal having uniform composition in good reproducibility, by housing the vessel such as a crucible in a specific closed vessel and growing the crystal. CONSTITUTION:A crucible 5 is housed in a holder 6 partially providing a pore 14 for pressure balance and the above-mentioned holder 6, and closing lid 10 having low-temperature part 12 becoming sufficiently low in vapor pressure of the Vb group element compared with dissociation pressure of Vb group element melt having strong volatility and continuously passing-through hole 13 for continuously passing through the interior of the holder 6 therein are connected with a connecting part 11 to constitute the closed vessel. Further the closed vessel is housed in a sealing vessel 9 and a seed crystal, the periodic table III group element and Vb group element and sealing agent are packed in the crucible 5 and heated by a heat generator 8 to melt the elements and surface of a raw material melt 3 is covered with a liquid sealing agent 4 and the melt 3 is gradually solidified from a seed crystal 1 part to grow the compound semiconductor crystal.
JP62192612A 1987-08-03 1987-08-03 Method for growing compound semiconductor crystal Expired - Lifetime JP2589985B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62192612A JP2589985B2 (en) 1987-08-03 1987-08-03 Method for growing compound semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62192612A JP2589985B2 (en) 1987-08-03 1987-08-03 Method for growing compound semiconductor crystal

Publications (2)

Publication Number Publication Date
JPS6437497A true JPS6437497A (en) 1989-02-08
JP2589985B2 JP2589985B2 (en) 1997-03-12

Family

ID=16294155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62192612A Expired - Lifetime JP2589985B2 (en) 1987-08-03 1987-08-03 Method for growing compound semiconductor crystal

Country Status (1)

Country Link
JP (1) JP2589985B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03137086A (en) * 1989-10-19 1991-06-11 Hitachi Cable Ltd Growing device for compound semiconductor crystal
WO1995033873A1 (en) * 1994-06-02 1995-12-14 Kabushiki Kaisha Kobe Seiko Sho Compound monocrystal manufacturing method and apparatus
JPH08277192A (en) * 1995-04-04 1996-10-22 Kobe Steel Ltd Apparatus for producing compound semiconductor single crystal and its production

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03137086A (en) * 1989-10-19 1991-06-11 Hitachi Cable Ltd Growing device for compound semiconductor crystal
WO1995033873A1 (en) * 1994-06-02 1995-12-14 Kabushiki Kaisha Kobe Seiko Sho Compound monocrystal manufacturing method and apparatus
JPH08277192A (en) * 1995-04-04 1996-10-22 Kobe Steel Ltd Apparatus for producing compound semiconductor single crystal and its production

Also Published As

Publication number Publication date
JP2589985B2 (en) 1997-03-12

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