JPS6437497A - Method for growing compound semiconductor crystal - Google Patents

Method for growing compound semiconductor crystal

Info

Publication number
JPS6437497A
JPS6437497A JP19261287A JP19261287A JPS6437497A JP S6437497 A JPS6437497 A JP S6437497A JP 19261287 A JP19261287 A JP 19261287A JP 19261287 A JP19261287 A JP 19261287A JP S6437497 A JPS6437497 A JP S6437497A
Authority
JP
Japan
Prior art keywords
vessel
melt
group element
crystal
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19261287A
Other languages
English (en)
Other versions
JP2589985B2 (ja
Inventor
Keigo Hoshikawa
Hideo Nakanishi
Hiroki Koda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62192612A priority Critical patent/JP2589985B2/ja
Publication of JPS6437497A publication Critical patent/JPS6437497A/ja
Application granted granted Critical
Publication of JP2589985B2 publication Critical patent/JP2589985B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP62192612A 1987-08-03 1987-08-03 化合物半導体結晶の育成方法 Expired - Lifetime JP2589985B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62192612A JP2589985B2 (ja) 1987-08-03 1987-08-03 化合物半導体結晶の育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62192612A JP2589985B2 (ja) 1987-08-03 1987-08-03 化合物半導体結晶の育成方法

Publications (2)

Publication Number Publication Date
JPS6437497A true JPS6437497A (en) 1989-02-08
JP2589985B2 JP2589985B2 (ja) 1997-03-12

Family

ID=16294155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62192612A Expired - Lifetime JP2589985B2 (ja) 1987-08-03 1987-08-03 化合物半導体結晶の育成方法

Country Status (1)

Country Link
JP (1) JP2589985B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03137086A (ja) * 1989-10-19 1991-06-11 Hitachi Cable Ltd 化合物半導体結晶の育成装置
WO1995033873A1 (en) * 1994-06-02 1995-12-14 Kabushiki Kaisha Kobe Seiko Sho Compound monocrystal manufacturing method and apparatus
JPH08277192A (ja) * 1995-04-04 1996-10-22 Kobe Steel Ltd 化合物半導体単結晶の製造装置および製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03137086A (ja) * 1989-10-19 1991-06-11 Hitachi Cable Ltd 化合物半導体結晶の育成装置
WO1995033873A1 (en) * 1994-06-02 1995-12-14 Kabushiki Kaisha Kobe Seiko Sho Compound monocrystal manufacturing method and apparatus
JPH08277192A (ja) * 1995-04-04 1996-10-22 Kobe Steel Ltd 化合物半導体単結晶の製造装置および製造方法

Also Published As

Publication number Publication date
JP2589985B2 (ja) 1997-03-12

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