JPS644070A - Thin film transistor and manufacture thereof - Google Patents

Thin film transistor and manufacture thereof

Info

Publication number
JPS644070A
JPS644070A JP62157667A JP15766787A JPS644070A JP S644070 A JPS644070 A JP S644070A JP 62157667 A JP62157667 A JP 62157667A JP 15766787 A JP15766787 A JP 15766787A JP S644070 A JPS644070 A JP S644070A
Authority
JP
Japan
Prior art keywords
film
siox
gate electrode
electrode
sin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62157667A
Other languages
Japanese (ja)
Inventor
Eiji Matsuzaki
Yoshifumi Yoritomi
Toshiyuki Koshimo
Hide Kobayashi
Kazuo Sunahara
Akihiro Kenmochi
Mitsuo Nakatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62157667A priority Critical patent/JPS644070A/en
Publication of JPS644070A publication Critical patent/JPS644070A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To upgrade mobility of a TFT and to suppress fluctuation in a threshold voltage, by oxidizing a surface of an SiN film which is an insulating film for a gate electrode and then forming an a-Si film of a semiconductor film. CONSTITUTION:A gate electrode 12, a gate electrode's insulating film 13 composed of an SiN film 13a and an SiOX film 13b, a semiconductor film 14 made of a-Si, an n-type a-Si 14' doped with phosphorus, a drain electrode 15 made of Cr 17 and Al 18, and a source electrode 6 made of Cr 15 and Al 18 are disposed serially on an insulating substrate 11 made of a glass plate or the like so that a thin film transistor TFT is formed. Said N<+> a-Si film 14' is formed to decrease a contact resistance of the electrode. Silicon dioxide of stoichiometric composition is not necessarily used in the SiOX film, but it is desirable that hydrogen and nitrogen are contained and its composition is defined with a range of 1.95<=x<=2.35. It is also desirable that only a surface layer of the SiN film is made of SiOX and its thickness is so at least 1nm to be a half or less of the SiN film.
JP62157667A 1987-06-26 1987-06-26 Thin film transistor and manufacture thereof Pending JPS644070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62157667A JPS644070A (en) 1987-06-26 1987-06-26 Thin film transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62157667A JPS644070A (en) 1987-06-26 1987-06-26 Thin film transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS644070A true JPS644070A (en) 1989-01-09

Family

ID=15654748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62157667A Pending JPS644070A (en) 1987-06-26 1987-06-26 Thin film transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS644070A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332606A (en) * 2005-04-28 2006-12-07 Semiconductor Energy Lab Co Ltd Thin film transistor manufacturing method, display device using the thin film transistor, and electronic apparatus incorporating the display device
JP2010245438A (en) * 2009-04-09 2010-10-28 Mitsubishi Electric Corp Thin film transistor, display device, and manufacturing method thereof
WO2011080957A1 (en) * 2009-12-29 2011-07-07 シャープ株式会社 Thin film transistor, method for manufacturing same, and display apparatus
JP2012064957A (en) * 2005-04-28 2012-03-29 Semiconductor Energy Lab Co Ltd Manufacturing method for semiconductor device
JP2012099847A (en) * 2012-01-13 2012-05-24 Sony Corp Method for manufacturing thin film transistor substrate
JP2015062235A (en) * 2009-06-26 2015-04-02 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device and semiconductor device
JP2016026403A (en) * 2010-08-26 2016-02-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147070A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Field effect transistor and manufacture thereof
JPS6014473A (en) * 1983-07-05 1985-01-25 Asahi Glass Co Ltd Electrode structure of thin film transistor
JPS60235467A (en) * 1984-05-09 1985-11-22 Hitachi Ltd How to make a thin film transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147070A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Field effect transistor and manufacture thereof
JPS6014473A (en) * 1983-07-05 1985-01-25 Asahi Glass Co Ltd Electrode structure of thin film transistor
JPS60235467A (en) * 1984-05-09 1985-11-22 Hitachi Ltd How to make a thin film transistor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332606A (en) * 2005-04-28 2006-12-07 Semiconductor Energy Lab Co Ltd Thin film transistor manufacturing method, display device using the thin film transistor, and electronic apparatus incorporating the display device
JP2012064957A (en) * 2005-04-28 2012-03-29 Semiconductor Energy Lab Co Ltd Manufacturing method for semiconductor device
US8318554B2 (en) 2005-04-28 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of forming gate insulating film for thin film transistors using plasma oxidation
JP2010245438A (en) * 2009-04-09 2010-10-28 Mitsubishi Electric Corp Thin film transistor, display device, and manufacturing method thereof
JP2015062235A (en) * 2009-06-26 2015-04-02 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device and semiconductor device
WO2011080957A1 (en) * 2009-12-29 2011-07-07 シャープ株式会社 Thin film transistor, method for manufacturing same, and display apparatus
US8717340B2 (en) 2009-12-29 2014-05-06 Sharp Kabushiki Kaisha Thin film transistor, method for manufacturing same, and display apparatus
JP2016026403A (en) * 2010-08-26 2016-02-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP2012099847A (en) * 2012-01-13 2012-05-24 Sony Corp Method for manufacturing thin film transistor substrate

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