JPS6442865A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS6442865A
JPS6442865A JP19942487A JP19942487A JPS6442865A JP S6442865 A JPS6442865 A JP S6442865A JP 19942487 A JP19942487 A JP 19942487A JP 19942487 A JP19942487 A JP 19942487A JP S6442865 A JPS6442865 A JP S6442865A
Authority
JP
Japan
Prior art keywords
film
electric field
floating gate
generated
trap level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19942487A
Other languages
Japanese (ja)
Inventor
Shuichi Oda
Tadashi Nishimura
Yasuaki Inoue
Kiichi Nishikawa
Hiroyuki Morita
Kiyoteru Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19942487A priority Critical patent/JPS6442865A/en
Publication of JPS6442865A publication Critical patent/JPS6442865A/en
Pending legal-status Critical Current

Links

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  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To eliminate the concentration of an electric field, to reduce the maximum electric field intensity and to make thin a tunnel oxide film by a method wherein an insulating film between a control gate and a substrate is contrived so as to have a trap level, which is generated by damage and functions as a floating gate. CONSTITUTION:Oxygen injection and so on are performed in an oxide film 3, a trap level 6 is formed in the film 3 by giving damage to the film 3 and this is used instead of a floating gate. In such a way, as a semiconductor storage device is formed into a constitution having the trap level 6, which is generated by giving damage to the film 3 and functions as the floating gate, the need to make the gate two times at the time of formation of the device is eliminated and the device can be formed in a simple process. Moreover, as the device does not possess a two-dimensional section like the floating gate, the concentration of an electric field is not generated at the ends and the angles and the maximum electric field intensity can be reduced. Thereby, the fatigue due to a field stress can be reduced and moreover, a tunnel oxide film can be made thin.
JP19942487A 1987-08-10 1987-08-10 Semiconductor storage device Pending JPS6442865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19942487A JPS6442865A (en) 1987-08-10 1987-08-10 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19942487A JPS6442865A (en) 1987-08-10 1987-08-10 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS6442865A true JPS6442865A (en) 1989-02-15

Family

ID=16407580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19942487A Pending JPS6442865A (en) 1987-08-10 1987-08-10 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6442865A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003003473A1 (en) * 2001-06-28 2003-01-09 Hitachi, Ltd. Nonvolatile semiconductor memory cell and semiconductor memory and method for fabricating nonvolatile semiconductor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003003473A1 (en) * 2001-06-28 2003-01-09 Hitachi, Ltd. Nonvolatile semiconductor memory cell and semiconductor memory and method for fabricating nonvolatile semiconductor memory

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