JPS6448467A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6448467A
JPS6448467A JP62205579A JP20557987A JPS6448467A JP S6448467 A JPS6448467 A JP S6448467A JP 62205579 A JP62205579 A JP 62205579A JP 20557987 A JP20557987 A JP 20557987A JP S6448467 A JPS6448467 A JP S6448467A
Authority
JP
Japan
Prior art keywords
diffusion
area
opening
corner sections
diffusion area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62205579A
Other languages
Japanese (ja)
Inventor
Shigemi Okada
Tadashi Natsume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP62205579A priority Critical patent/JPS6448467A/en
Publication of JPS6448467A publication Critical patent/JPS6448467A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent a parasitic transistor from operating, by employing the opening of a gate electrode as both an ion implanting opening for a second diffusion area and an opening for reducing the capacitance. CONSTITUTION:An opposite conductivity type second diffusion area 15, which overlaps with the corner sections of an adjacent first diffusion area 9, is formed by diffusion with a gate electrode 7 as a mask. And, a second insulating film is formed with the diffusion opening 16 of the gate electrode being left. In such a manner, the four corner sections of the first diffusion area 9 and the corner sections of the second diffusion area 15 overlap each other, which results in the conductivity type of the corner sections of the area 15 being converted from N<-> type to P<+> type. As a result, all of the first diffusion area 9 are electrically connected each other through the respective second diffusion areas 15 with relatively heavy impurity concentration, thereby the resistance under a source area 11 can be reduced and the parasitic transistor thereof can be prevented from operating.
JP62205579A 1987-08-19 1987-08-19 Manufacture of semiconductor device Pending JPS6448467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62205579A JPS6448467A (en) 1987-08-19 1987-08-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62205579A JPS6448467A (en) 1987-08-19 1987-08-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6448467A true JPS6448467A (en) 1989-02-22

Family

ID=16509218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62205579A Pending JPS6448467A (en) 1987-08-19 1987-08-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6448467A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4981519A (en) * 1984-12-11 1991-01-01 Nippon Kokan Kabushiki Kaisha Hydraulic hardening material and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607764A (en) * 1983-06-13 1985-01-16 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607764A (en) * 1983-06-13 1985-01-16 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4981519A (en) * 1984-12-11 1991-01-01 Nippon Kokan Kabushiki Kaisha Hydraulic hardening material and method of manufacturing the same

Similar Documents

Publication Publication Date Title
KR850002639A (en) Semiconductor memory
EP0339962A3 (en) Field effect semiconductor device
KR860009489A (en) Semiconductor integrated circuit device and manufacturing method thereof
JPS6439069A (en) Field-effect transistor
JPS56110264A (en) High withstand voltage mos transistor
JPS64764A (en) Semiconductor device
JPS6461059A (en) Semiconductor device
JPS6417475A (en) Manufacture of mos semiconductor device
JPS56150858A (en) Semiconductor device and manufacture thereof
EP0237029A3 (en) A heterojunction field effect device operable at a high output current with a high withstand voltage
JPS6489366A (en) Semiconductor device
JPS56133871A (en) Mos field effect semiconductor device with high breakdown voltage
JPS55102274A (en) Insulated gate field effect transistor
JPS6414960A (en) Semiconductor element
JPS6461060A (en) Semiconductor device
JPS6450469A (en) Manufacture of schottky barrier field-effect transistor
JPS64762A (en) Semiconductor device
JPS641275A (en) Semiconductor device
JPS647661A (en) Semiconductor device
JPS6459864A (en) Mos transistor
JPH02163962A (en) Mos-type memory integrated circuit device
JPH01166563A (en) Semiconductor device
JPS55153374A (en) Semiconductor device
JPS6476752A (en) Semiconductor device
JPS6423573A (en) Semiconductor integrated circuit