JPS6452296A - Memory - Google Patents

Memory

Info

Publication number
JPS6452296A
JPS6452296A JP63171984A JP17198488A JPS6452296A JP S6452296 A JPS6452296 A JP S6452296A JP 63171984 A JP63171984 A JP 63171984A JP 17198488 A JP17198488 A JP 17198488A JP S6452296 A JPS6452296 A JP S6452296A
Authority
JP
Japan
Prior art keywords
potential
cell
lines
line
selection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63171984A
Other languages
English (en)
Inventor
Bii Aadorei Deebitsudo
A Douni Berunaaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS6452296A publication Critical patent/JPS6452296A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP63171984A 1981-02-24 1988-07-12 Memory Pending JPS6452296A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/237,796 US4387445A (en) 1981-02-24 1981-02-24 Random access memory cell

Publications (1)

Publication Number Publication Date
JPS6452296A true JPS6452296A (en) 1989-02-28

Family

ID=22895217

Family Applications (2)

Application Number Title Priority Date Filing Date
JP57001069A Granted JPS57143791A (en) 1981-02-24 1982-01-08 Memory
JP63171984A Pending JPS6452296A (en) 1981-02-24 1988-07-12 Memory

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP57001069A Granted JPS57143791A (en) 1981-02-24 1982-01-08 Memory

Country Status (4)

Country Link
US (1) US4387445A (ja)
EP (1) EP0058845B1 (ja)
JP (2) JPS57143791A (ja)
DE (1) DE3279692D1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4624046A (en) * 1982-01-04 1986-11-25 Fairchild Camera & Instrument Corp. Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
US4813017A (en) * 1985-10-28 1989-03-14 International Business Machines Corportion Semiconductor memory device and array
US4858181A (en) * 1987-07-07 1989-08-15 Texas Instruments Incorporated Fast recovery PNP loaded bipolar static RAM memory cell with an independent current path
US4864540A (en) * 1988-02-11 1989-09-05 Digital Equipment Corporation Bipolar ram having no write recovery time
US5040145A (en) * 1990-04-06 1991-08-13 International Business Machines Corporation Memory cell with active write load
US5276638A (en) * 1991-07-31 1994-01-04 International Business Machines Corporation Bipolar memory cell with isolated PNP load
JPH0660644A (ja) * 1992-08-05 1994-03-04 Takayama:Kk メモリーデバイス

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038428A (ja) * 1973-08-08 1975-04-09

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1524892B1 (de) * 1967-12-15 1970-09-03 Ibm Deutschland Halbleiterspeicherzelle mit kreuzgekoppelten Multie mittertransistoren
US3541530A (en) * 1968-01-15 1970-11-17 Ibm Pulsed power four device memory cell
US3643235A (en) * 1968-12-30 1972-02-15 Ibm Monolithic semiconductor memory
US3815106A (en) * 1972-05-11 1974-06-04 S Wiedmann Flip-flop memory cell arrangement
US3781828A (en) * 1972-05-04 1973-12-25 Ibm Three-dimensionally addressed memory
NL7309453A (nl) * 1973-07-06 1975-01-08 Philips Nv Geheugenmatrix.
US3909807A (en) * 1974-09-03 1975-09-30 Bell Telephone Labor Inc Integrated circuit memory cell
DE2457921C2 (de) * 1974-12-07 1976-12-09 Ibm Deutschland Verfahren und schaltungsanordnung zur erhoehung der schreibgeschwindigkeit in integrierten datenspeichern
JPS5837699B2 (ja) * 1974-12-16 1983-08-18 三菱電機株式会社 ハンドウタイキオクソウチ
US4021786A (en) * 1975-10-30 1977-05-03 Fairchild Camera And Instrument Corporation Memory cell circuit and semiconductor structure therefore
US4032902A (en) * 1975-10-30 1977-06-28 Fairchild Camera And Instrument Corporation An improved semiconductor memory cell circuit and structure
DE2700587A1 (de) * 1976-01-15 1977-07-21 Itt Ind Gmbh Deutsche Monolithisch integrierte i hoch 2 l-speicherzelle

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038428A (ja) * 1973-08-08 1975-04-09

Also Published As

Publication number Publication date
EP0058845A2 (en) 1982-09-01
EP0058845A3 (en) 1986-03-19
EP0058845B1 (en) 1989-05-10
JPS57143791A (en) 1982-09-06
JPH0210518B2 (ja) 1990-03-08
US4387445A (en) 1983-06-07
DE3279692D1 (en) 1989-06-15

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