JPS6456873A - Microwave plasma cvd device having improved microwave introducing window - Google Patents

Microwave plasma cvd device having improved microwave introducing window

Info

Publication number
JPS6456873A
JPS6456873A JP5729688A JP5729688A JPS6456873A JP S6456873 A JPS6456873 A JP S6456873A JP 5729688 A JP5729688 A JP 5729688A JP 5729688 A JP5729688 A JP 5729688A JP S6456873 A JPS6456873 A JP S6456873A
Authority
JP
Japan
Prior art keywords
microwave
introducing window
introducing
deposited film
alumina
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5729688A
Other languages
English (en)
Japanese (ja)
Other versions
JPH055897B2 (fr
Inventor
Shigehira Iida
Takashi Arai
Junichiro Hashizume
Tetsuya Takei
Keishi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP5729688A priority Critical patent/JPS6456873A/ja
Publication of JPS6456873A publication Critical patent/JPS6456873A/ja
Publication of JPH055897B2 publication Critical patent/JPH055897B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photovoltaic Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP5729688A 1988-03-10 1988-03-10 Microwave plasma cvd device having improved microwave introducing window Granted JPS6456873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5729688A JPS6456873A (en) 1988-03-10 1988-03-10 Microwave plasma cvd device having improved microwave introducing window

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5729688A JPS6456873A (en) 1988-03-10 1988-03-10 Microwave plasma cvd device having improved microwave introducing window

Publications (2)

Publication Number Publication Date
JPS6456873A true JPS6456873A (en) 1989-03-03
JPH055897B2 JPH055897B2 (fr) 1993-01-25

Family

ID=13051590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5729688A Granted JPS6456873A (en) 1988-03-10 1988-03-10 Microwave plasma cvd device having improved microwave introducing window

Country Status (1)

Country Link
JP (1) JPS6456873A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5129359A (en) * 1988-11-15 1992-07-14 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate
JPH0613197A (ja) * 1992-06-15 1994-01-21 Nippon Koshuha Kk 高周波電力導入路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5129359A (en) * 1988-11-15 1992-07-14 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate
JPH0613197A (ja) * 1992-06-15 1994-01-21 Nippon Koshuha Kk 高周波電力導入路

Also Published As

Publication number Publication date
JPH055897B2 (fr) 1993-01-25

Similar Documents

Publication Publication Date Title
SE8602715D0 (sv) Forfarande for beleggning av substrat i en vakuumkammare
JPS6436769A (en) Plasma treatment device
PT77245B (en) Dispositif and process of chemical vapour deposition
ES2005822A6 (es) Una lampara de descarga en vapor de mercurio a alta presion
ES8400997A1 (es) Un metodo mejorado para recubrir mediante plasma la superficie interior de un tubo de cristal.
JPS57167631A (en) Plasma vapor-phase growing method
JPS6450429A (en) Formation of insulating film
EP0402867A3 (fr) Appareil pour le traitement aux micro-ondes dans un champ magnétique
JPS6456873A (en) Microwave plasma cvd device having improved microwave introducing window
JPS6421859A (en) Electrodeless low voltage discharge lamp
US5510088A (en) Low temperature plasma film deposition using dielectric chamber as source material
TW358224B (en) Chemical vapor deposition apparatus
JPS55145338A (en) Pressure reduction chemical vapour deposition device
ES285494U (es) Un tubo electrico de descarga
JPS5773174A (en) Manufacturing apparatus for coating film
JPS5782474A (en) Microwave etching device
JPS5767009A (en) Formation of film
JPS57192266A (en) Plasma surface treating apparatus
JPS57194521A (en) Manufacture of thin film semiconductor
JPH01154492A (ja) マイクロ波加熱装置
JPS5653137A (en) Inner surface treatment of hollow body
JPS57161058A (en) Production of hard film
JPS6487596A (en) Diamond vapor synthesis device
JPS57123968A (en) Formation of zinc oxide film by plasma vapor phase method
JPS6436766A (en) Formation of rigid carbon film

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees