JPS646537B2 - - Google Patents

Info

Publication number
JPS646537B2
JPS646537B2 JP58227176A JP22717683A JPS646537B2 JP S646537 B2 JPS646537 B2 JP S646537B2 JP 58227176 A JP58227176 A JP 58227176A JP 22717683 A JP22717683 A JP 22717683A JP S646537 B2 JPS646537 B2 JP S646537B2
Authority
JP
Japan
Prior art keywords
heat treatment
wafer
layer
ion implantation
gettering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58227176A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60117738A (ja
Inventor
Shunichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP58227176A priority Critical patent/JPS60117738A/ja
Publication of JPS60117738A publication Critical patent/JPS60117738A/ja
Publication of JPS646537B2 publication Critical patent/JPS646537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies

Landscapes

  • Bipolar Transistors (AREA)
JP58227176A 1983-11-30 1983-11-30 半導体装置の製造方法 Granted JPS60117738A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58227176A JPS60117738A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58227176A JPS60117738A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60117738A JPS60117738A (ja) 1985-06-25
JPS646537B2 true JPS646537B2 (de) 1989-02-03

Family

ID=16856672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58227176A Granted JPS60117738A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60117738A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5236872A (en) * 1991-03-21 1993-08-17 U.S. Philips Corp. Method of manufacturing a semiconductor device having a semiconductor body with a buried silicide layer
JP3524141B2 (ja) * 1994-03-25 2004-05-10 株式会社東芝 半導体装置及びその製造方法
US5757063A (en) * 1994-03-25 1998-05-26 Kabushiki Kaisha Toshiba Semiconductor device having an extrinsic gettering film
JP2011253983A (ja) * 2010-06-03 2011-12-15 Disco Abrasive Syst Ltd シリコンウェーハへのゲッタリング層付与方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396666A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Manufacture of semiconductor device with pn junction
JPS5666046A (en) * 1979-11-01 1981-06-04 Sony Corp Processing method of semiconductor substrate

Also Published As

Publication number Publication date
JPS60117738A (ja) 1985-06-25

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