JPS6468704A - Proton exchange light guide - Google Patents

Proton exchange light guide

Info

Publication number
JPS6468704A
JPS6468704A JP62225286A JP22528687A JPS6468704A JP S6468704 A JPS6468704 A JP S6468704A JP 62225286 A JP62225286 A JP 62225286A JP 22528687 A JP22528687 A JP 22528687A JP S6468704 A JPS6468704 A JP S6468704A
Authority
JP
Japan
Prior art keywords
light guide
proton exchange
guide
substrate
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62225286A
Other languages
Japanese (ja)
Inventor
Hayami Hosokawa
Junichi Takagi
Maki Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP62225286A priority Critical patent/JPS6468704A/en
Publication of JPS6468704A publication Critical patent/JPS6468704A/en
Pending legal-status Critical Current

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  • Optical Integrated Circuits (AREA)

Abstract

PURPOSE:To easily obtain a light guide of a small width by masking the part of an LiNbO3 substrate except the side faces of the step provided to said substrate and executing a proton exchange from the side face direction, thereby forming the light guide. CONSTITUTION:The step 2 of the height T corresponding to a desired guide depth is formed by a method such as etching on the LiNbO3 substrate and the part except the side face of the step 2 is masked (mask 9). The proton exchange is then exchanged by immersing the substrate into a benzoic acid soln. kept at about 240 deg.C to form the proton exchange light guide 3. The depth of the guide can be set freely by the height T of the step and the width W of the guide by the proton exchange time, respectively. The light guide of the small guide width such as single mode channel light guide is thereby easily formed.
JP62225286A 1987-09-10 1987-09-10 Proton exchange light guide Pending JPS6468704A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62225286A JPS6468704A (en) 1987-09-10 1987-09-10 Proton exchange light guide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225286A JPS6468704A (en) 1987-09-10 1987-09-10 Proton exchange light guide

Publications (1)

Publication Number Publication Date
JPS6468704A true JPS6468704A (en) 1989-03-14

Family

ID=16826954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225286A Pending JPS6468704A (en) 1987-09-10 1987-09-10 Proton exchange light guide

Country Status (1)

Country Link
JP (1) JPS6468704A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009205112A (en) * 2008-02-29 2009-09-10 Sumitomo Electric Ind Ltd Optical waveguide and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009205112A (en) * 2008-02-29 2009-09-10 Sumitomo Electric Ind Ltd Optical waveguide and method of manufacturing the same

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