JPS64720A - Manufacture of single crystal thin-film - Google Patents
Manufacture of single crystal thin-filmInfo
- Publication number
- JPS64720A JPS64720A JP15446187A JP15446187A JPS64720A JP S64720 A JPS64720 A JP S64720A JP 15446187 A JP15446187 A JP 15446187A JP 15446187 A JP15446187 A JP 15446187A JP S64720 A JPS64720 A JP S64720A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- film
- section
- crystal silicon
- crystal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 11
- 239000010409 thin film Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To obtain a single crystal thin-film, a crystal orientation of which coincides with that of a single crystal substrate, by leaving a region, in which the single crystal thin film as species is brought into contact directly with a single crystal thin-film in the lower layer of the single crystal thin-film or the single crystal substrate, when the single crystal thin-film as species is patterned.
CONSTITUTION: An SiO2 film 7 is formed onto a single crystal silicon film 61 through a normal CVD method, and only a section from which the single crystal silicon film 61 must be exposed is patterned through a normal photolithographic method, thus shaping an opening section 6a. A polycrystalline silicon film 8 and an SiO2 film 9 are formed onto the opening section 6a, a region in which the upper section of the single crystal silicon film 61 is brought into contact directly with an exposed section 1a in a single crystal silicon substrate 1 is scanned with argon laser beams 10 up to other regions, and a melting section 11 is solidified in the direction of the arrow 13. That is, the polycrystalline silicon film 8 is changed into a single crystal, and a single crystal silicon film 12, a crystal orientation of which coincides with the single crystal silicon substrate 1, is acquired. Regions up to the region of the single crystal silicon substrate 1a are melted at that time.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62154461A JPH0795525B2 (en) | 1987-06-23 | 1987-06-23 | Method for manufacturing single crystal thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62154461A JPH0795525B2 (en) | 1987-06-23 | 1987-06-23 | Method for manufacturing single crystal thin film |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH01720A JPH01720A (en) | 1989-01-05 |
| JPS64720A true JPS64720A (en) | 1989-01-05 |
| JPH0795525B2 JPH0795525B2 (en) | 1995-10-11 |
Family
ID=15584747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62154461A Expired - Lifetime JPH0795525B2 (en) | 1987-06-23 | 1987-06-23 | Method for manufacturing single crystal thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0795525B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007120601A (en) * | 2005-10-27 | 2007-05-17 | Honda Motor Co Ltd | Centrifugal clutch |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5853821A (en) * | 1981-09-25 | 1983-03-30 | Toshiba Corp | Preparation of laminated semiconductor device |
-
1987
- 1987-06-23 JP JP62154461A patent/JPH0795525B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5853821A (en) * | 1981-09-25 | 1983-03-30 | Toshiba Corp | Preparation of laminated semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007120601A (en) * | 2005-10-27 | 2007-05-17 | Honda Motor Co Ltd | Centrifugal clutch |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0795525B2 (en) | 1995-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0236123A3 (en) | A semiconductor device and method for preparing the same | |
| EP0146427A3 (en) | Process for producing integrated silicon structures on isolated islands of a substrate | |
| GB2106419A (en) | Growth of structures based on group iv semiconductor materials | |
| JPS64720A (en) | Manufacture of single crystal thin-film | |
| JPS53135263A (en) | Production of semiconductor device | |
| JPS5333050A (en) | Production of semiconductor element | |
| JPS5247673A (en) | Process for production of silicon crystal film | |
| JPS5772333A (en) | Manufacture of semiconductor device | |
| JPS53108389A (en) | Manufacture for semiconductor device | |
| JPS57155764A (en) | Manufacture of semiconductor device | |
| JPS5521192A (en) | Manufacture of semiconductor device | |
| JPS64721A (en) | Manufacture of single crystal thin-film | |
| JPS6455858A (en) | Manufacture of semiconductor device | |
| JPS5524459A (en) | Selective formation of silicon | |
| JPS56109896A (en) | Semiconductor single crystal and its growing method | |
| JPS54133088A (en) | Semiconductor device | |
| JPS5717494A (en) | Manufacture of single crystal | |
| JPS5283164A (en) | Production of thin film semiconductor substrate | |
| JPS52130575A (en) | Semiconductor device and its preparation | |
| JPS57183053A (en) | Semiconductor device | |
| JPS53144690A (en) | Production of semiconductor device | |
| JPS5735368A (en) | Manufacture of semiconductor device | |
| JPS55100295A (en) | Production of single crystal thin film | |
| JPS5489594A (en) | Manufacture for integrated circuit | |
| JPS57121231A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |