JPS64721A - Manufacture of single crystal thin-film - Google Patents
Manufacture of single crystal thin-filmInfo
- Publication number
- JPS64721A JPS64721A JP15446287A JP15446287A JPS64721A JP S64721 A JPS64721 A JP S64721A JP 15446287 A JP15446287 A JP 15446287A JP 15446287 A JP15446287 A JP 15446287A JP S64721 A JPS64721 A JP S64721A
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- substrate
- sio
- species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 10
- 239000010409 thin film Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 239000000758 substrate Substances 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 230000008018 melting Effects 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To leave a region, a crystal orientation of which coincides with a substrate, and to form single crystal thin films, crystal orientations of which agree with the single crystal substrate, stably even in two layers or more, using the region section as species by composing a melting region in the single crystal thin-films as species so as to be made smaller than the pattern of the thin-films.
CONSTITUTION: An SiO2 film 2 is formed onto a single crystal silicon substrate 1 in 2μm, and an exposed section in the substrate 1 is patterned, thus shaping an opening section 1a 2μm square. A polycrystalline silicon film 3 in 0.5μm and an SiO2 film in 0.26μm are formed, sections from the exposed section 1a are scanned with beams 5 in melting width of 60μm, the silicon film 3 is changed into a single crystal, and a single crystal silicon film 6, a crystal orientation of which coincides with the substrate 1, is acquired. The film 4 is etched, the film 6 is patterned, and a single crystal silicon film 7 50μm square as species is acquired. An SiO2 film 8, an opening section 7a, a polycrystalline silicon film 9 and an SiO2 film 10 are shaped in the same manner as mentioned above, sections from an exposed section in the film 7 are scanned, the film 9 is turned into a single crystal, employing the film 7 as species, and a single crystal silicon film 13, a crystal orientation of which agrees with the substrate 1, is obtained.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62154462A JPH0795526B2 (en) | 1987-06-23 | 1987-06-23 | Method for manufacturing single crystal thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62154462A JPH0795526B2 (en) | 1987-06-23 | 1987-06-23 | Method for manufacturing single crystal thin film |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPS64721A true JPS64721A (en) | 1989-01-05 |
| JPH01721A JPH01721A (en) | 1989-01-05 |
| JPH0795526B2 JPH0795526B2 (en) | 1995-10-11 |
Family
ID=15584770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62154462A Expired - Lifetime JPH0795526B2 (en) | 1987-06-23 | 1987-06-23 | Method for manufacturing single crystal thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0795526B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009081433A (en) * | 2007-09-26 | 2009-04-16 | Sharp Corp | Crystallization method and active semiconductor film structure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5853821A (en) * | 1981-09-25 | 1983-03-30 | Toshiba Corp | Preparation of laminated semiconductor device |
-
1987
- 1987-06-23 JP JP62154462A patent/JPH0795526B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5853821A (en) * | 1981-09-25 | 1983-03-30 | Toshiba Corp | Preparation of laminated semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009081433A (en) * | 2007-09-26 | 2009-04-16 | Sharp Corp | Crystallization method and active semiconductor film structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0795526B2 (en) | 1995-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB2106419A (en) | Growth of structures based on group iv semiconductor materials | |
| JPS64721A (en) | Manufacture of single crystal thin-film | |
| JPS5772333A (en) | Manufacture of semiconductor device | |
| JPS5495185A (en) | Production of semiconductor device | |
| JPS64720A (en) | Manufacture of single crystal thin-film | |
| JPS6449225A (en) | Manufacture of semiconductor device | |
| JPS5646582A (en) | Formation of pattern of filmlike article | |
| JPS5543882A (en) | Gaseous-phase growing of compound semiconductor epitaxial film | |
| JPS5688384A (en) | Manufacture of josephson junction element | |
| JPS5513964A (en) | Method of manufacturing semiconductor device | |
| JPS6469064A (en) | Manufacture of oxide superconducting wiring | |
| JPS5524459A (en) | Selective formation of silicon | |
| JPS52130575A (en) | Semiconductor device and its preparation | |
| JPS5467372A (en) | Production of semiconductor device | |
| JPS642372A (en) | Manufacture of mes fet | |
| JPS5283164A (en) | Production of thin film semiconductor substrate | |
| JPS57176747A (en) | Manufacture of semiconductor device | |
| JPS5687387A (en) | Manufacture of josephson element | |
| JPS57128973A (en) | Semiconductor element and its manufacture | |
| JPS5322382A (en) | Production of dielectric isolating substrate | |
| JPS6455890A (en) | Semiconductor substrate | |
| JPS5546587A (en) | Method of forming plasma growing film | |
| JPS5323559A (en) | Production of compound semiconductor | |
| JPS6427265A (en) | Manufacture of semiconductor device | |
| JPS6432635A (en) | Manufacture of thin-film element substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |