JPS64721A - Manufacture of single crystal thin-film - Google Patents

Manufacture of single crystal thin-film

Info

Publication number: JPS64721A
Authority: JP; Japan
Prior art keywords: film; single crystal; substrate; sio; species
Prior art date: 1987-06-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP15446287A

Other languages

English (en)

Other versions

JPH01721A (ja

JPH0795526B2 (ja

Inventor

Toshiaki Miyajima

Masayoshi Koba

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

National Institute of Advanced Industrial Science and Technology AIST

Original Assignee

Agency of Industrial Science and Technology

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-06-23

Filing date

1987-06-23

Publication date

1989-01-05

1987-06-23 Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology

1987-06-23 Priority to JP62154462A priority Critical patent/JPH0795526B2/ja

1989-01-05 Publication of JPH01721A publication Critical patent/JPH01721A/ja

1989-01-05 Publication of JPS64721A publication Critical patent/JPS64721A/ja

1995-10-11 Publication of JPH0795526B2 publication Critical patent/JPH0795526B2/ja

2010-10-11 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000013078 crystal Substances 0.000 title abstract 10
239000010409 thin film Substances 0.000 title abstract 4
238000004519 manufacturing process Methods 0.000 title 1
239000010408 film Substances 0.000 abstract 15
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
239000000758 substrate Substances 0.000 abstract 6
229910052681 coesite Inorganic materials 0.000 abstract 4
229910052906 cristobalite Inorganic materials 0.000 abstract 4
229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 4
239000000377 silicon dioxide Substances 0.000 abstract 4
229910052682 stishovite Inorganic materials 0.000 abstract 4
229910052905 tridymite Inorganic materials 0.000 abstract 4
230000008018 melting Effects 0.000 abstract 2
238000002844 melting Methods 0.000 abstract 2
229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
238000007493 shaping process Methods 0.000 abstract 1
229910052710 silicon Inorganic materials 0.000 abstract 1
239000010703 silicon Substances 0.000 abstract 1

Landscapes

Recrystallisation Techniques (AREA)

JP62154462A 1987-06-23 1987-06-23 単結晶薄膜の製造方法 Expired - Lifetime JPH0795526B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP62154462A JPH0795526B2 (ja)	1987-06-23	1987-06-23	単結晶薄膜の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62154462A JPH0795526B2 (ja)	1987-06-23	1987-06-23	単結晶薄膜の製造方法

Publications (3)

Publication Number	Publication Date
JPH01721A JPH01721A (ja)	1989-01-05
JPS64721A true JPS64721A (en)	1989-01-05
JPH0795526B2 JPH0795526B2 (ja)	1995-10-11

Family

ID=15584770

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP62154462A Expired - Lifetime JPH0795526B2 (ja)	1987-06-23	1987-06-23	単結晶薄膜の製造方法

Country Status (1)

Country	Link
JP (1)	JPH0795526B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2009081433A (ja) *	2007-09-26	2009-04-16	Sharp Corp	結晶化方法および活性半導体膜構造体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5853821A (ja) *	1981-09-25	1983-03-30	Toshiba Corp	積層半導体装置の製造方法

1987
- 1987-06-23 JP JP62154462A patent/JPH0795526B2/ja not_active Expired - Lifetime

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5853821A (ja) *	1981-09-25	1983-03-30	Toshiba Corp	積層半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2009081433A (ja) *	2007-09-26	2009-04-16	Sharp Corp	結晶化方法および活性半導体膜構造体

Also Published As

Publication number	Publication date
JPH0795526B2 (ja)	1995-10-11

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Legal Events

Date	Code	Title	Description
2007-06-23	EXPY	Cancellation because of completion of term