JPS64764A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number: JPS64764A
Authority: JP; Japan
Prior art keywords: region; self; silicon layer; polycrystalline silicon; providing
Prior art date: 1987-06-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP15568287A

Other languages

English (en)

Other versions

JPH01764A (ja

Inventor

Tomoyuki Furuhata

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Seiko Epson Corp

Original Assignee

Seiko Epson Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-06-23

Filing date

1987-06-23

Publication date

1989-01-05

1987-06-23 Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp

1987-06-23 Priority to JP15568287A priority Critical patent/JPS64764A/ja

1989-01-05 Publication of JPH01764A publication Critical patent/JPH01764A/ja

1989-01-05 Publication of JPS64764A publication Critical patent/JPS64764A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title abstract 2
229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
230000003071 parasitic effect Effects 0.000 abstract 2
125000006850 spacer group Chemical group 0.000 abstract 2
239000003990 capacitor Substances 0.000 abstract 1
230000003247 decreasing effect Effects 0.000 abstract 1
238000009792 diffusion process Methods 0.000 abstract 1
239000012535 impurity Substances 0.000 abstract 1
238000001459 lithography Methods 0.000 abstract 1
230000008018 melting Effects 0.000 abstract 1
238000002844 melting Methods 0.000 abstract 1
239000002184 metal Substances 0.000 abstract 1
239000000758 substrate Substances 0.000 abstract 1

JP15568287A 1987-06-23 1987-06-23 Semiconductor device Pending JPS64764A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP15568287A JPS64764A (en)	1987-06-23	1987-06-23	Semiconductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP15568287A JPS64764A (en)	1987-06-23	1987-06-23	Semiconductor device

Publications (2)

Publication Number	Publication Date
JPH01764A JPH01764A (ja)	1989-01-05
JPS64764A true JPS64764A (en)	1989-01-05

Family

ID=15611262

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP15568287A Pending JPS64764A (en)	1987-06-23	1987-06-23	Semiconductor device

Country Status (1)

Country	Link
JP (1)	JPS64764A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5146291A (en) *	1988-08-31	1992-09-08	Mitsubishi Denki Kabushiki Kaisha	MIS device having lightly doped drain structure
US5217913A (en) *	1988-08-31	1993-06-08	Mitsubishi Denki Kabushiki Kaisha	Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers
US5371024A (en) *	1988-09-30	1994-12-06	Kabushiki Kaisha Toshiba	Semiconductor device and process for manufacturing the same
US5834816A (en) *	1991-10-10	1998-11-10	Goldstar Electron Co., Ltd.	MOSFET having tapered gate electrode
US5949105A (en) *	1991-06-26	1999-09-07	Texas Instruments Incorporated	Insulated-gate field-effect transistor structure and method

1987
- 1987-06-23 JP JP15568287A patent/JPS64764A/ja active Pending

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5146291A (en) *	1988-08-31	1992-09-08	Mitsubishi Denki Kabushiki Kaisha	MIS device having lightly doped drain structure
US5217913A (en) *	1988-08-31	1993-06-08	Mitsubishi Denki Kabushiki Kaisha	Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers
US5371024A (en) *	1988-09-30	1994-12-06	Kabushiki Kaisha Toshiba	Semiconductor device and process for manufacturing the same
US5949105A (en) *	1991-06-26	1999-09-07	Texas Instruments Incorporated	Insulated-gate field-effect transistor structure and method
US5834816A (en) *	1991-10-10	1998-11-10	Goldstar Electron Co., Ltd.	MOSFET having tapered gate electrode

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