JPS6480060A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number: JPS6480060A
Authority: JP; Japan
Prior art keywords: film; nitride film; dielectric; electrode layer; integrated circuit
Prior art date: 1987-09-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP62235911A

Other languages

English (en)

Inventor

Hiroko Kaneko

Masami Ozawa

Atsushi Hiraiwa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-09-19

Filing date

1987-09-19

Publication date

1989-03-24

1987-09-19 Priority to JP62235911A priority Critical patent/JPS6480060A/ja

1987-09-19 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1988-09-15 Priority to KR1019880011906A priority patent/KR100212098B1/ko

1988-09-19 Priority to US07/246,514 priority patent/US5153685A/en

1989-03-24 Publication of JPS6480060A publication Critical patent/JPS6480060A/ja

1994-06-06 Priority to US08/254,562 priority patent/US5504029A/en

1996-03-25 Priority to US08/620,867 priority patent/US5753550A/en

1996-07-01 Priority to US08/674,185 priority patent/US5734188A/en

1997-08-25 Priority to KR1019970040515A priority patent/KR0150941B1/ko

1998-01-26 Priority to US09/013,605 priority patent/US5930624A/en

1999-05-25 Priority to US09/317,999 priority patent/US6281071B1/en

2001-07-27 Priority to US09/915,590 priority patent/US20020028574A1/en

2001-12-03 Priority to US09/998,654 priority patent/US6737318B2/en

2004-02-10 Priority to US10/774,524 priority patent/US20040155289A1/en

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1
150000004767 nitrides Chemical class 0.000 abstract 3
229910052581 Si3N4 Inorganic materials 0.000 abstract 2
239000003990 capacitor Substances 0.000 abstract 2
230000007547 defect Effects 0.000 abstract 2
238000000034 method Methods 0.000 abstract 2
229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
229920005591 polysilicon Polymers 0.000 abstract 2
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
238000005229 chemical vapour deposition Methods 0.000 abstract 1
238000007254 oxidation reaction Methods 0.000 abstract 1
230000001590 oxidative effect Effects 0.000 abstract 1
229910052814 silicon oxide Inorganic materials 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

Semiconductor Integrated Circuits (AREA)
Semiconductor Memories (AREA)

JP62235911A 1987-09-19 1987-09-19 Semiconductor integrated circuit device Pending JPS6480060A (en)

Priority Applications (12)

Application Number	Priority Date	Filing Date	Title
JP62235911A JPS6480060A (en)	1987-09-19	1987-09-19	Semiconductor integrated circuit device
KR1019880011906A KR100212098B1 (ko)	1987-09-19	1988-09-15	반도체 집적회로 장치 및 그 제조 방법과 반도체 집적 회로 장치의 배선기판 및 그 제조 방법
US07/246,514 US5153685A (en)	1987-09-19	1988-09-19	Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US08/254,562 US5504029A (en)	1987-09-19	1994-06-06	Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs
US08/620,867 US5753550A (en)	1987-09-19	1996-03-25	Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US08/674,185 US5734188A (en)	1987-09-19	1996-07-01	Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
KR1019970040515A KR0150941B1 (ko)	1987-09-19	1997-08-25	반도체 집적회로장치 및 그 제조방법과 반도체 집적회로장치의 배선기판 및 그 제조방법
US09/013,605 US5930624A (en)	1987-09-19	1998-01-26	Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring
US09/317,999 US6281071B1 (en)	1987-09-19	1999-05-25	Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiring
US09/915,590 US20020028574A1 (en)	1987-09-19	2001-07-27	Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US09/998,654 US6737318B2 (en)	1987-09-19	2001-12-03	Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US10/774,524 US20040155289A1 (en)	1987-09-19	2004-02-10	Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62235911A JPS6480060A (en)	1987-09-19	1987-09-19	Semiconductor integrated circuit device

Publications (1)

Publication Number	Publication Date
JPS6480060A true JPS6480060A (en)	1989-03-24

Family

ID=16993063

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP62235911A Pending JPS6480060A (en)	1987-09-19	1987-09-19	Semiconductor integrated circuit device

Country Status (1)

Country	Link
JP (1)	JPS6480060A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5065215A (en) *	1989-06-28	1991-11-12	Nec Corporation	Semiconductor memory cell and method of manufacturing the same
JPH03262150A (ja) *	1990-03-13	1991-11-21	Matsushita Electron Corp	半導体容量装置
JPH04243157A (ja) *	1991-01-18	1992-08-31	Nec Corp	半導体集積回路装置
US5237187A (en) *	1990-11-30	1993-08-17	Hitachi, Ltd.	Semiconductor memory circuit device and method for fabricating same
US5276344A (en) *	1990-04-27	1994-01-04	Mitsubishi Denki Kabushiki Kaisha	Field effect transistor having impurity regions of different depths and manufacturing method thereof
US5283204A (en) *	1992-04-15	1994-02-01	Micron Semiconductor, Inc.	Method of forming passivation oxidation for improving cell leakage and cell area

1987
- 1987-09-19 JP JP62235911A patent/JPS6480060A/ja active Pending

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5065215A (en) *	1989-06-28	1991-11-12	Nec Corporation	Semiconductor memory cell and method of manufacturing the same
JPH03262150A (ja) *	1990-03-13	1991-11-21	Matsushita Electron Corp	半導体容量装置
US5276344A (en) *	1990-04-27	1994-01-04	Mitsubishi Denki Kabushiki Kaisha	Field effect transistor having impurity regions of different depths and manufacturing method thereof
US5489791A (en) *	1990-04-27	1996-02-06	Mitsubishi Denki Kabushiki Kaisha	Field effect transistor having impurity regions of different depths and manufacturing method thereof
US5672533A (en) *	1990-04-27	1997-09-30	Mitsubishi Denki Kabushiki Kaisha	Field effect transistor having impurity regions of different depths and manufacturing method thereof
US5237187A (en) *	1990-11-30	1993-08-17	Hitachi, Ltd.	Semiconductor memory circuit device and method for fabricating same
US5389558A (en) *	1990-11-30	1995-02-14	Hitachi, Ltd.	Method of making a semiconductor memory circuit device
US6043118A (en) *	1990-11-30	2000-03-28	Hitachi, Ltd.	Semiconductor memory circuit device and method for fabricating a semiconductor memory device circuit
JPH04243157A (ja) *	1991-01-18	1992-08-31	Nec Corp	半導体集積回路装置
US5283204A (en) *	1992-04-15	1994-02-01	Micron Semiconductor, Inc.	Method of forming passivation oxidation for improving cell leakage and cell area

Publication	Publication Date	Title
KR900007606B1 (ko)	1990-10-17	반도체 메모리
KR970067977A (ko)	1997-10-13	전극의 제조방법
JPS63120462A (ja)	1988-05-24	１デバイス型メモリ・セルの製造方法
EP1684343A3 (en)	2010-03-03	Method for manufacturing a semiconductor memory device
JPS6150361A (ja)	1986-03-12	メモリセル
JPH0770617B2 (ja)	1995-07-31	半導体記憶装置
JPS6480060A (en)	1989-03-24	Semiconductor integrated circuit device
JPH0221653A (ja)	1990-01-24	半導体装置及びその製造方法
JPS62137863A (ja)	1987-06-20	半導体メモリ装置
JPH0654801B2 (ja)	1994-07-20	半導体メモリセルおよびその製造方法
JPS62213273A (ja)	1987-09-19	ダイナミツクランダムアクセスメモリ
JPS6480066A (en)	1989-03-24	Semiconductor integrated circuit device
KR960015525B1 (ko)	1996-11-15	반도체 소자의 제조방법
JPS60258952A (ja)	1985-12-20	半導体メモリ装置
JPS5911665A (ja)	1984-01-21	半導体装置
JPH05243515A (ja)	1993-09-21	半導体メモリ
JPS62198153A (ja)	1987-09-01	半導体装置
JPS6410663A (en)	1989-01-13	Semiconductor device
JPH07183395A (ja)	1995-07-21	半導体装置
JPS56138946A (en)	1981-10-29	Semiconductor device
JPS61166157A (ja)	1986-07-26	半導体記憶装置
JPH01173750A (ja)	1989-07-10	半導体メモリ装置
JPS61154058A (ja)	1986-07-12	多層キャパシタの製造方法
JPS6457656A (en)	1989-03-03	Manufacture of semiconductor device
JPH03276752A (ja)	1991-12-06	半導体容量装置