JPS6480061A - Semiconductor integrated circuit device and manufacture thereof - Google Patents

Semiconductor integrated circuit device and manufacture thereof

Info

Publication number
JPS6480061A
JPS6480061A JP62235913A JP23591387A JPS6480061A JP S6480061 A JPS6480061 A JP S6480061A JP 62235913 A JP62235913 A JP 62235913A JP 23591387 A JP23591387 A JP 23591387A JP S6480061 A JPS6480061 A JP S6480061A
Authority
JP
Japan
Prior art keywords
electrode layer
dielectric film
dielectric
layer
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62235913A
Other languages
Japanese (ja)
Other versions
JP2906405B2 (en
Inventor
Toshihiro Sekiguchi
Jun Murata
Hiroko Kaneko
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62235913A priority Critical patent/JP2906405B2/en
Priority to KR1019880011906A priority patent/KR100212098B1/en
Priority to US07/246,514 priority patent/US5153685A/en
Publication of JPS6480061A publication Critical patent/JPS6480061A/en
Priority to US08/254,562 priority patent/US5504029A/en
Priority to US08/620,867 priority patent/US5753550A/en
Priority to US08/674,185 priority patent/US5734188A/en
Priority to KR1019970040515A priority patent/KR0150941B1/en
Priority to US09/013,605 priority patent/US5930624A/en
Priority to US09/317,999 priority patent/US6281071B1/en
Application granted granted Critical
Publication of JP2906405B2 publication Critical patent/JP2906405B2/en
Priority to US09/915,590 priority patent/US20020028574A1/en
Priority to US09/998,654 priority patent/US6737318B2/en
Priority to US10/774,524 priority patent/US20040155289A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To contrive improvement in the dielectric withstand voltage of a dielectric film by a method wherein the dielectric film of the capacitor for accumulation of information of stacked structure of a DRAM is constituted in the same form as the upper layer of the second electrode layer. CONSTITUTION:A DRAM is composed of a MISFET Qs for selection of a memory cell and a capacitor C for accumulation of information. Said capacitor C is composed of a stacked structure in which the first electrode layer 13, a part of which is connected to the semiconductor region 9 of the above-mentioned FET Qs, a dielectric 14 and the second electrode layer 15 are successively laminated. The dielectric film 14 and the second electrode layer 15 are formed in the same shape. As the charge accumulation on the dielectric film 14 is reduced through the above-mentioned procedures, the dielectric withstand voltage of the dielectric film can be improved. Also, in the process of manufacture of the title device, the inter-layer insulating film 12 on the other semiconductor region of the above-mentioned FET Qs for memory selection is removed using the above-mentioned second electrode layer 15 or the mask with which the layer 15 is patterned. As a result, the reduction in number of manufacturing process can be accomplished.
JP62235913A 1987-09-19 1987-09-19 Method for manufacturing semiconductor integrated circuit device Expired - Lifetime JP2906405B2 (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP62235913A JP2906405B2 (en) 1987-09-19 1987-09-19 Method for manufacturing semiconductor integrated circuit device
KR1019880011906A KR100212098B1 (en) 1987-09-19 1988-09-15 Semiconductor integrated circuit device and manufacturing method thereof, wiring board of semiconductor integrated circuit device and manufacturing method thereof
US07/246,514 US5153685A (en) 1987-09-19 1988-09-19 Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US08/254,562 US5504029A (en) 1987-09-19 1994-06-06 Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs
US08/620,867 US5753550A (en) 1987-09-19 1996-03-25 Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US08/674,185 US5734188A (en) 1987-09-19 1996-07-01 Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same
KR1019970040515A KR0150941B1 (en) 1987-09-19 1997-08-25 Semiconductor integrated circuit device and manufacturing method thereof, wiring board of semiconductor integrated circuit device and manufacturing method thereof
US09/013,605 US5930624A (en) 1987-09-19 1998-01-26 Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring
US09/317,999 US6281071B1 (en) 1987-09-19 1999-05-25 Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiring
US09/915,590 US20020028574A1 (en) 1987-09-19 2001-07-27 Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US09/998,654 US6737318B2 (en) 1987-09-19 2001-12-03 Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring
US10/774,524 US20040155289A1 (en) 1987-09-19 2004-02-10 Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62235913A JP2906405B2 (en) 1987-09-19 1987-09-19 Method for manufacturing semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS6480061A true JPS6480061A (en) 1989-03-24
JP2906405B2 JP2906405B2 (en) 1999-06-21

Family

ID=16993095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62235913A Expired - Lifetime JP2906405B2 (en) 1987-09-19 1987-09-19 Method for manufacturing semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JP2906405B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5135881A (en) * 1990-09-27 1992-08-04 Nec Corporation Method of making random access memory device having memory cells each implemented by a stacked storage capacitor and a transfer transistor with lightly-doped drain structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60770A (en) * 1983-06-17 1985-01-05 Hitachi Ltd semiconductor equipment
JPS609156A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd semiconductor storage device
JPS60153158A (en) * 1984-01-23 1985-08-12 Oki Electric Ind Co Ltd Method for manufacturing capacitor dielectric film
JPS62120072A (en) * 1985-11-20 1987-06-01 Fujitsu Ltd Semiconductor memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60770A (en) * 1983-06-17 1985-01-05 Hitachi Ltd semiconductor equipment
JPS609156A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd semiconductor storage device
JPS60153158A (en) * 1984-01-23 1985-08-12 Oki Electric Ind Co Ltd Method for manufacturing capacitor dielectric film
JPS62120072A (en) * 1985-11-20 1987-06-01 Fujitsu Ltd Semiconductor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5135881A (en) * 1990-09-27 1992-08-04 Nec Corporation Method of making random access memory device having memory cells each implemented by a stacked storage capacitor and a transfer transistor with lightly-doped drain structure

Also Published As

Publication number Publication date
JP2906405B2 (en) 1999-06-21

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