JPS5636151A - Semiconductor memory device - Google Patents

Abstract

PURPOSE:To form a 1 transistor-1 memory capacitor with large capacity without increasing an element area by a mechanism wherein triple laminated regions by P layers and an layer are made up in a semiconductor memory storage consisting of the memory capacitor. CONSTITUTION:An n type impurity region RM is formed on a p type semiconductor substrate 1, and a p type impurity region RM' is made up in the region RM. The p type impurity region RM' is connected to a power source VSS by a metallic electrode wire 6 such as aluminum, and the substrate 1 is also connected to the power surce VSS. Thus, depletion layers DL, DL' are built up to a p.n junction formed by the substrate 1 and the n type impurity region RM and a p. junction made up by the n type impurity region RM and the p type impurity region RM', and capacity as an equivalent circuit shown in the figure is generated. When these regions are used as memory capacitors, the operation of a memory storage is stabilized because of their large capacity.