JPS6486557A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS6486557A
JPS6486557A JP62242652A JP24265287A JPS6486557A JP S6486557 A JPS6486557 A JP S6486557A JP 62242652 A JP62242652 A JP 62242652A JP 24265287 A JP24265287 A JP 24265287A JP S6486557 A JPS6486557 A JP S6486557A
Authority
JP
Japan
Prior art keywords
emitter
film
openings
resist mask
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62242652A
Other languages
Japanese (ja)
Inventor
Toshihiko Hamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62242652A priority Critical patent/JPS6486557A/en
Publication of JPS6486557A publication Critical patent/JPS6486557A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To suppress an emitter crowding effect to thereby improve the high-frequency characteristics of a bipolar transistor, by preventing the formation of a junction between the side wall of an emitter and a base. CONSTITUTION:A boron ion layer is formed on an epitaxial silicon layer 9 as an inner base region 11. After the region 11 is activated by, e.g., heating at 900 deg.C for a period of as short as 30 sec., a polycrystalline silicon film 10 which is not converted into single crystal is removed by using a resist mask 12a. Also an SiN film 5 and a polycrystalline silicon film 4 remaining in other regions are removed. After removing the resist mask 12a, a silicon oxide film 15 of a thickness of, e.g., 2000Angstrom is formed on the entire surface by chemical vapor growth etc. Thereafter openings 16, 17 and 18 connected to inner base, emitter and collector regions are formed by, e.g., reactive ion etching using a resist mark 12b. Finally electrode layers 19, 20 and 21 of aluminum etc., are formed in the openings 16, 17 and 18.
JP62242652A 1987-09-29 1987-09-29 Semiconductor device and its manufacture Pending JPS6486557A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62242652A JPS6486557A (en) 1987-09-29 1987-09-29 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62242652A JPS6486557A (en) 1987-09-29 1987-09-29 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS6486557A true JPS6486557A (en) 1989-03-31

Family

ID=17092231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62242652A Pending JPS6486557A (en) 1987-09-29 1987-09-29 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS6486557A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184058B1 (en) 1997-10-24 2001-02-06 Sharp Kabushiki Kaisha Integrated thin film solar battery and method for fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184058B1 (en) 1997-10-24 2001-02-06 Sharp Kabushiki Kaisha Integrated thin film solar battery and method for fabricating the same

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