JPWO2024252544A5 - - Google Patents

Info

Publication number
JPWO2024252544A5
JPWO2024252544A5 JP2025525512A JP2025525512A JPWO2024252544A5 JP WO2024252544 A5 JPWO2024252544 A5 JP WO2024252544A5 JP 2025525512 A JP2025525512 A JP 2025525512A JP 2025525512 A JP2025525512 A JP 2025525512A JP WO2024252544 A5 JPWO2024252544 A5 JP WO2024252544A5
Authority
JP
Japan
Prior art keywords
ga2o3
single crystal
beta type
section
beta
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025525512A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024252544A1 (fr
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/021100 external-priority patent/WO2024252544A1/fr
Publication of JPWO2024252544A1 publication Critical patent/JPWO2024252544A1/ja
Publication of JPWO2024252544A5 publication Critical patent/JPWO2024252544A5/ja
Pending legal-status Critical Current

Links

JP2025525512A 2023-06-07 2023-06-07 Pending JPWO2024252544A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/021100 WO2024252544A1 (fr) 2023-06-07 2023-06-07 Creuset, procédé de production d'un substrat monocristallin de trioxyde de digallium de type bêta l'utilisant, et substrat monocristallin de trioxyde de digallium de type bêta

Publications (2)

Publication Number Publication Date
JPWO2024252544A1 JPWO2024252544A1 (fr) 2024-12-12
JPWO2024252544A5 true JPWO2024252544A5 (fr) 2026-02-19

Family

ID=93795545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025525512A Pending JPWO2024252544A1 (fr) 2023-06-07 2023-06-07

Country Status (4)

Country Link
JP (1) JPWO2024252544A1 (fr)
CN (1) CN120826501A (fr)
TW (1) TW202507090A (fr)
WO (1) WO2024252544A1 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH042687A (ja) * 1990-04-18 1992-01-07 Fujikura Ltd 酸化物単結晶育成用るつぼ
JP3639147B2 (ja) * 1999-06-02 2005-04-20 日本電信電話株式会社 単結晶育成用るつぼ
JP2016117606A (ja) * 2014-12-19 2016-06-30 株式会社タムラ製作所 Ga2O3系単結晶の育成方法、及び坩堝
JP7155968B2 (ja) * 2018-12-04 2022-10-19 Tdk株式会社 単結晶育成用ルツボ及び単結晶製造方法
US11674239B2 (en) * 2020-02-27 2023-06-13 Fujikoshi Machinery Corp. Gallium oxide crystal manufacturing device
CN114318503A (zh) * 2021-12-30 2022-04-12 陕西旭光晶体科技有限公司 氧化嫁晶体用的铂铱合金坩埚以及制备方法

Similar Documents

Publication Publication Date Title
US5110696A (en) Rechargeable lithiated thin film intercalation electrode battery
JP3551851B2 (ja) X線蛍光体製作方法及びx線蛍光体形成用基板
US6086945A (en) Method of forming polycrystalline silicon thin layer
US20040223750A1 (en) Evaporation apparatus
US20030210731A1 (en) Process and device for producing a quartz glass crucible by ring-like arc, and its quartz glass crucible
JPWO2024252544A5 (fr)
JP3979800B2 (ja) リチウム二次電池用電極の形成装置および形成方法
US5306473A (en) Quartz glass crucible for pulling a single crystal
US5306388A (en) Quartz glass crucible for pulling a semiconductor single crystal
JP2594051B2 (ja) プラズマ処理方法
JPS5987040A (ja) フイルム沈着法
JPS5919190B2 (ja) 鉛皮膜の製造方法
US20040223751A1 (en) Evaporation apparatus
JPH11312683A (ja) 半導体単結晶シリコンの製造方法
US20050000949A1 (en) Heating device and heating method
US3499785A (en) Coating substrates by evaporation-deposition
JPWO2024252542A5 (fr)
JP2697753B2 (ja) 直流グロー放電による金属被膜の堆積法
JPS5850419B2 (ja) 圧電性薄膜の製造方法
JP3580101B2 (ja) リチウムイオン電池負極材料の製造方法及び装置
JP2652676B2 (ja) 薄膜形成装置
KR101382538B1 (ko) 마그네슘 증발용 마그네슘-구리 조성물 사용 방법 및 마그네슘 분배기
JP2907403B2 (ja) 堆積膜形成装置
JPS6062113A (ja) プラズマcvd装置
JPH0639688B2 (ja) シリコン薄膜の形成方法