KR910001774A - 반도체 집적소자에 내부전압 변환회로 - Google Patents

반도체 집적소자에 내부전압 변환회로 Download PDF

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Publication number
KR910001774A
KR910001774A KR1019890008067A KR890008067A KR910001774A KR 910001774 A KR910001774 A KR 910001774A KR 1019890008067 A KR1019890008067 A KR 1019890008067A KR 890008067 A KR890008067 A KR 890008067A KR 910001774 A KR910001774 A KR 910001774A
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KR
South Korea
Prior art keywords
buffer
oscillator
output
circuit
conversion circuit
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Application number
KR1019890008067A
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English (en)
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KR920010749B1 (ko
Inventor
민동선
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김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019890008067A priority Critical patent/KR920010749B1/ko
Priority to US07/484,107 priority patent/US5072134A/en
Priority to GB9004426A priority patent/GB2232829B/en
Priority to DE4006306A priority patent/DE4006306C2/de
Priority to FR9002539A priority patent/FR2648291B1/fr
Priority to NL9000482A priority patent/NL194900C/nl
Priority to JP2046021A priority patent/JP2902434B2/ja
Priority to IT02056590A priority patent/IT1248749B/it
Priority to CN90104365A priority patent/CN1030020C/zh
Publication of KR910001774A publication Critical patent/KR910001774A/ko
Application granted granted Critical
Publication of KR920010749B1 publication Critical patent/KR920010749B1/ko
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/59—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manipulation Of Pulses (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

내용 없음

Description

반도체 집적소자에 내부전압 변환회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 반도체 집적소자의 내부 전압 변환회로를 나타낸 실시회로도,
제4도는 본 발명에 따른 바이어스회로의 구체적인 실시회로도,
제5도는 본 발명에 따른 동작상태를 나타낸 타임챠트.
내용 없음

Claims (4)

  1. 반도체 소자내에 내부전압 변환회로를 가지는 다음과 같은 구성; 구형파의 발진출력을 발생시키는 발진기(1)와, 상기 발진기(1)의 클럭을 입력으로하고 발전기의 발진출력을 챠아지 펌프(3)에 인가시키는 버퍼(2)와, 상기 드라이버(2)의 출력을 입력으로하여 피라미터 여진된 출력을 발생시키는 챠아지 펌프(3)와, 상기 챠아지 펌프(3)의 신호를 받아 내부 전원전압 레벨로 조절하여 기판전원(VOUT)으로 출력시키는 파워부(4)와, 로 구성된 서브회로(10)에 있어서, 공통으로 사용되는 하나의 상기한 발진기(1)와, 게이트제어되는 버퍼(2')와, 상기 서브회로(10)와 동일한 구성을 가지는 챠아지펌프(3') 및 파워부(4')와, 내부전원 전압을 감지하여 상기 버퍼(2')의 구동을 제어하는 검출부(5)와, 로 구성되는 메인회로(20)와; 상기 메인회로(20)와 동일한 메인회로들이 상기 서브회로(10)에 병렬로 다단 연결되게 구성시킨 반도체 직접소자의 내부전압 변환회로.
  2. 제1항에 있어서, 공통으로 사용되는 하나의 발진기와 다수개의 분리된 버퍼회로, 챠아지 펌프, 파워부와로 구성된 내부전원 변환회로의 출력과 반도체 소자의 내부 발생클럭을 게이팅하여 신호 처리하는 논리수단과, 상기 논리수단에 의하여 제어받는 버퍼(2') 및 상기 논리수단에 의하여 제어받지 아니하는 버퍼(2)와, 상기 버퍼(2)(2')의 출력 클럭이 180° 위상을 갖게하는 수단과, 로 되는 반도체 직접 소자의 내부전압 변환회로.
  3. 제1항에 있어서, 상기 버퍼(2)(2')에 구형파 펄스를 공급하는 발전기(1)가 버퍼회로의 갯수만큼 구성하며 각각의 발진기와 버퍼회로가 따로 동작되게 구성시킨 반도체 직접소자의 내부전압 변환회로.
  4. 제2항에 있어서, 상기 버퍼(2)(2')에 구형파 펄스를 공급하는 발진기(1)가 버퍼회로의 갯수만큼 구성하며 각각의 발진기와 버퍼회로가 따로 동작되게 구성시킨 반도체 직접소자의 내부 전압 변화회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890008067A 1989-06-10 1989-06-10 반도체 집적소자의 내부전압 변환회로 Expired KR920010749B1 (ko)

Priority Applications (9)

Application Number Priority Date Filing Date Title
KR1019890008067A KR920010749B1 (ko) 1989-06-10 1989-06-10 반도체 집적소자의 내부전압 변환회로
US07/484,107 US5072134A (en) 1989-06-10 1990-02-22 Internal voltage converter in semiconductor integrated circuit
DE4006306A DE4006306C2 (de) 1989-06-10 1990-02-28 Spannungswandler mit geringem Leistungsverbrauch
FR9002539A FR2648291B1 (fr) 1989-06-10 1990-02-28 Convertisseur de tension interne dans un circuit integre a semi conducteur
GB9004426A GB2232829B (en) 1989-06-10 1990-02-28 Semiconductor integrated circuit
NL9000482A NL194900C (nl) 1989-06-10 1990-02-28 Interne spanningsconvertor van een geïntergreerde halfgeleiderschakeling.
JP2046021A JP2902434B2 (ja) 1989-06-10 1990-02-28 半導体集積回路内の電圧変換回路
IT02056590A IT1248749B (it) 1989-06-10 1990-06-07 Convertitore di tensione interna in un circuito integrato a semiconduttori
CN90104365A CN1030020C (zh) 1989-06-10 1990-06-09 半导体集成电路中的内电压变换器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890008067A KR920010749B1 (ko) 1989-06-10 1989-06-10 반도체 집적소자의 내부전압 변환회로

Publications (2)

Publication Number Publication Date
KR910001774A true KR910001774A (ko) 1991-01-31
KR920010749B1 KR920010749B1 (ko) 1992-12-14

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KR1019890008067A Expired KR920010749B1 (ko) 1989-06-10 1989-06-10 반도체 집적소자의 내부전압 변환회로

Country Status (9)

Country Link
US (1) US5072134A (ko)
JP (1) JP2902434B2 (ko)
KR (1) KR920010749B1 (ko)
CN (1) CN1030020C (ko)
DE (1) DE4006306C2 (ko)
FR (1) FR2648291B1 (ko)
GB (1) GB2232829B (ko)
IT (1) IT1248749B (ko)
NL (1) NL194900C (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5487036A (en) * 1991-12-27 1996-01-23 Fujitsu Limited Nonvolatile semiconductor memory
KR100806127B1 (ko) * 2006-09-06 2008-02-22 삼성전자주식회사 피크 커런트를 감소시키는 파워 게이팅 회로 및 파워게이팅 방법

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2724919B2 (ja) * 1991-02-05 1998-03-09 三菱電機株式会社 基板バイアス発生装置
JPH04255989A (ja) * 1991-02-07 1992-09-10 Mitsubishi Electric Corp 半導体記憶装置および内部電圧発生方法
JP2945508B2 (ja) * 1991-06-20 1999-09-06 三菱電機株式会社 半導体装置
DE4130191C2 (de) * 1991-09-30 1993-10-21 Samsung Electronics Co Ltd Konstantspannungsgenerator für eine Halbleitereinrichtung mit kaskadierter Auflade- bzw. Entladeschaltung
IT1258242B (it) * 1991-11-07 1996-02-22 Samsung Electronics Co Ltd Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione
KR940003301B1 (ko) * 1991-12-20 1994-04-20 주식회사 금성사 Ce버스 심볼 엔코딩 처리회로
KR950002015B1 (ko) * 1991-12-23 1995-03-08 삼성전자주식회사 하나의 오실레이터에 의해 동작되는 정전원 발생회로
US5313111A (en) * 1992-02-28 1994-05-17 Texas Instruments Incorporated Substrate slew circuit providing reduced electron injection
US5359244A (en) * 1992-07-31 1994-10-25 Sgs-Thomson Microelectronics, Inc. Gate drive circuit for a MOS power transistor
JP2831914B2 (ja) * 1992-09-30 1998-12-02 株式会社東芝 半導体集積回路装置
FR2696598B1 (fr) * 1992-10-01 1994-11-04 Sgs Thomson Microelectronics Circuit élévateur de tension de type pompe de charge avec oscillateur bootstrapé.
US5337284A (en) * 1993-01-11 1994-08-09 United Memories, Inc. High voltage generator having a self-timed clock circuit and charge pump, and a method therefor
JP3162564B2 (ja) * 1993-08-17 2001-05-08 株式会社東芝 昇圧回路及び昇圧回路を備えた不揮発性半導体記憶装置
DE69327164T2 (de) * 1993-09-30 2000-05-31 Stmicroelectronics S.R.L., Agrate Brianza Spannungserhöhungsschaltung zur Erzeugung von positiven und negativen erhöhten Spannungen
KR0124046B1 (ko) * 1993-11-18 1997-11-25 김광호 반도체메모리장치의 승압레벨 감지회로
US5461591A (en) * 1993-12-02 1995-10-24 Goldstar Electron Co., Ltd. Voltage generator for semiconductor memory device
JP3090833B2 (ja) * 1993-12-28 2000-09-25 株式会社東芝 半導体記憶装置
US5491439A (en) * 1994-08-31 1996-02-13 International Business Machines Corporation Method and apparatus for reducing jitter in a phase locked loop circuit
US5513225A (en) * 1994-08-31 1996-04-30 International Business Machines Corporation Resistorless phase locked loop circuit employing direct current injection
US5525932A (en) * 1994-08-31 1996-06-11 International Business Machines Corporation Lock indicator for phase locked loop circuit
US5502671A (en) * 1994-08-31 1996-03-26 Texas Instruments Incorporated Apparatus and method for a semiconductor memory configuration-dependent output buffer supply circuit
US5619161A (en) * 1994-08-31 1997-04-08 International Business Machines Corporation Diffrential charge pump with integrated common mode control
US5495207A (en) * 1994-08-31 1996-02-27 International Business Machines Corporation Differential current controlled oscillator with variable load
KR0137317B1 (ko) * 1994-12-29 1998-04-29 김광호 반도체 메모리소자의 활성싸이클에서 사용되는 승압회로
JP2738335B2 (ja) * 1995-04-20 1998-04-08 日本電気株式会社 昇圧回路
US5612644A (en) * 1995-08-31 1997-03-18 Cirrus Logic Inc. Circuits, systems and methods for controlling substrate bias in integrated circuits
JP2917914B2 (ja) * 1996-05-17 1999-07-12 日本電気株式会社 昇圧回路
GB2324423B (en) * 1997-04-16 1999-07-21 Lsi Logic Corp Charge pump
KR100319164B1 (ko) * 1997-12-31 2002-04-22 박종섭 다중레벨검출에의한다중구동장치및그방법
JP3566060B2 (ja) * 1998-01-29 2004-09-15 富士通株式会社 半導体装置
US6456152B1 (en) * 1999-05-17 2002-09-24 Hitachi, Ltd. Charge pump with improved reliability
US6278317B1 (en) 1999-10-29 2001-08-21 International Business Machines Corporation Charge pump system having multiple charging rates and corresponding method
US6275096B1 (en) * 1999-12-14 2001-08-14 International Business Machines Corporation Charge pump system having multiple independently activated charge pumps and corresponding method
DE10056293A1 (de) * 2000-11-14 2002-06-06 Infineon Technologies Ag Schaltungsanordnung zur Erzeugung einer steuerbaren Ausgangsspannung
US6388506B1 (en) * 2000-12-15 2002-05-14 Marvell International, Ltd. Regulator with leakage compensation
DE10101558C1 (de) * 2001-01-15 2002-08-08 Infineon Technologies Ag Verfahren zum Steuern einer Versorgungsschaltung und integrierte Schaltung (z.B. DRAM-Speicherbaustein)
KR100406558B1 (ko) * 2001-12-21 2003-11-20 주식회사 하이닉스반도체 반도체 메모리 소자의 전압 발생장치
EP1490742B1 (de) * 2002-04-03 2006-11-15 Infineon Technologies AG Spannungsregleranordnung
JP3539947B2 (ja) * 2002-06-20 2004-07-07 沖電気工業株式会社 パワー検出回路付リミティングアンプ
TWI293464B (en) * 2003-07-08 2008-02-11 Winbond Electronics Corp Two phase internal voltage generator
DE102004011458B4 (de) * 2004-03-09 2007-01-04 Infineon Technologies Ag Schaltungsanordnung zur Bereitstellung einer geregelten Betriebsspannung für einen Datenträger und Verfahren zur Ansteuerung eines NMOS-Längsregeltransistors
KR100605575B1 (ko) * 2004-06-30 2006-07-31 주식회사 하이닉스반도체 테스트 모드시 전하 펌프에서의 토글링 주기를 변경할 수있는 내부 전압 발생 회로 및 방법
JP6090214B2 (ja) * 2014-03-19 2017-03-08 株式会社デンソー 電源回路

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153565A (en) * 1978-05-24 1979-12-03 Nec Corp Semiconductor circuit using insulation gate type field effect transistor
US4460835A (en) * 1980-05-13 1984-07-17 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
US4439692A (en) * 1981-12-07 1984-03-27 Signetics Corporation Feedback-controlled substrate bias generator
JPS58105563A (ja) * 1981-12-17 1983-06-23 Mitsubishi Electric Corp 基板バイアス発生回路
US4733108A (en) * 1982-06-28 1988-03-22 Xerox Corporation On-chip bias generator
US4585954A (en) * 1983-07-08 1986-04-29 Texas Instruments Incorporated Substrate bias generator for dynamic RAM having variable pump current level
JPS60176121A (ja) * 1984-02-22 1985-09-10 Toshiba Corp 電圧降下回路
JPS6159688A (ja) * 1984-08-31 1986-03-27 Hitachi Ltd 半導体集積回路装置
JPS6199363A (ja) * 1984-10-19 1986-05-17 Mitsubishi Electric Corp 基板電位発生回路
JPS61163655A (ja) * 1985-01-14 1986-07-24 Toshiba Corp 相補型半導体集積回路
JPH0750552B2 (ja) * 1985-12-20 1995-05-31 三菱電機株式会社 内部電位発生回路
KR890005159B1 (ko) * 1987-04-30 1989-12-14 삼성전자 주식회사 백 바이어스 전압 발생기
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits
JPH0817033B2 (ja) * 1988-12-08 1996-02-21 三菱電機株式会社 基板バイアス電位発生回路

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5487036A (en) * 1991-12-27 1996-01-23 Fujitsu Limited Nonvolatile semiconductor memory
US5490107A (en) * 1991-12-27 1996-02-06 Fujitsu Limited Nonvolatile semiconductor memory
US5537356A (en) * 1991-12-27 1996-07-16 Fujitsu Limited Nonvolatile semiconductor memory
US5590074A (en) * 1991-12-27 1996-12-31 Fujitsu Limited Nonvolatile semiconductor memory
KR100806127B1 (ko) * 2006-09-06 2008-02-22 삼성전자주식회사 피크 커런트를 감소시키는 파워 게이팅 회로 및 파워게이팅 방법

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US5072134B1 (ko) 1993-08-10
IT9020565A0 (ko) 1990-06-07
GB2232829B (en) 1994-03-23
NL194900B (nl) 2003-02-03
CN1030020C (zh) 1995-10-11
GB2232829A (en) 1990-12-19
GB9004426D0 (en) 1990-04-25
JPH0329510A (ja) 1991-02-07
IT1248749B (it) 1995-01-27
FR2648291A1 (fr) 1990-12-14
NL9000482A (nl) 1991-01-02
DE4006306A1 (de) 1990-12-20
JP2902434B2 (ja) 1999-06-07
CN1048122A (zh) 1990-12-26
US5072134A (en) 1991-12-10
IT9020565A1 (it) 1991-12-07
KR920010749B1 (ko) 1992-12-14
FR2648291B1 (fr) 1993-03-26
DE4006306C2 (de) 1996-02-22

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