KR940010245A - 반도체소자의 콘택홀 및 그 제조방법 - Google Patents

반도체소자의 콘택홀 및 그 제조방법 Download PDF

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Publication number
KR940010245A
KR940010245A KR1019920019736A KR920019736A KR940010245A KR 940010245 A KR940010245 A KR 940010245A KR 1019920019736 A KR1019920019736 A KR 1019920019736A KR 920019736 A KR920019736 A KR 920019736A KR 940010245 A KR940010245 A KR 940010245A
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South Korea
Prior art keywords
forming
contact hole
oxide film
film
bpsg
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문창순
손희창
박대일
박상훈
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김주용
현대전자산업 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

반도체소자의 콘택홀의 측벽에서 노출되는 게이트 산화막을 통해 금속모빌이온(Na+, K+) 이 침투되는 것을 방지하기 위해, BPSG막과 로드 산화막 및 인터폴리 산화막을 식각하여 형성되는 콘택홀의 측벽에 BPSG막을 형성시켜, 반도체 소자의 오염을 방지함으로써, 반도체소자의 특성을 향상시키고, 수율도 증가시킨다.

Description

반도체소자의 콘택홀 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본발명에 따라 반도체 기판 상부의 콘택홀 측벽에 보호막이 형성되어 있는 상태를 나타내는 반도체소자의 단면도.

Claims (5)

  1. 반도체소자의 콘택홀의 형성방법에 있어서, 실리콘기판(1)을 제공하는 단계와, 상기 실리콘기판(1) 상부에 게이트 산화막(3)을 형성하는 단계와, 상기 게이트 산화막(3) 상부에 폴리게이트를 형성하는 단계와, 상기 폴리게이트 상부에 인터폴리 산화막(5)을 형성하는 단계와, 상기 인터폴리 산화막(5) 상부에 포드 산화막(7)을 형성하는 단계와, 상기 로드 산화막(7) 상부에 BPSG막(9)을 형성하는 단계와, 상기 BPSG막(9)상부에 포토레지스트층을 이용하여 마스크패턴을 형성하는 단계와, 상기 마스크패턴을 이용하여 BPSG막(9)과 로드 산화막(7) 및 인터폴리 산화막(5)을 식각하여 콘택홀(11)를 형성하는 단계와, 상기 콘택홀(11) 내부에 BPSG를 플로우시킨후 식각공정으로 측벽보호막(15)을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체소자의 콘택홀 형성방법.
  2. 제1항에 있어서, 측벽보호막(15)을 형성하기 위해 콘택홀(11)내에 플로우되어 증착되는 BPSG막(9)의 보론농도는 1.2±0.l5WT%이며, 인 농도는 5.3±0.3WT%이며 두께는 2000Å인 것을 특징으로 하는 반도체소자의 콘택홀 형성방법.
  3. 제1항 또는 2항에 있어서, 콘택홀(11)내에 BPSG를 플로우시킬때의 온도는 900℃이며, 사용가스는 H2와 O2이며, 소우킹시간은 3시간정도인 것을 특징으로 하는 반도체 소자의 콘택홀 형성방법.
  4. 제1항 또는 2항에 있어서, 측벽보호막(15)을 형성하기 위해, 콘택홀(11)내에 증착되어 있는 BPSG막(9)은 RIE(Reactive Ion Etch)방법으로 식각되며. 에칭타겟은 2700Å인 것을 특징으로 하는 반도체소자의 콘택홀 형성방법.
  5. 반도체소자의 콘택홀에 있어서, 상기 콘택홀(11) 내부에 BPSG를 플로우시킨후 식각공정을 거쳐 형성되는 측벽보호막(15)을 구비하는 것을 특징으로 하는 반도체소자의 콘택홀.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920019736A 1992-10-26 1992-10-26 반도체소자의 콘택홀 및 그 제조방법 Withdrawn KR940010245A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920019736A KR940010245A (ko) 1992-10-26 1992-10-26 반도체소자의 콘택홀 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920019736A KR940010245A (ko) 1992-10-26 1992-10-26 반도체소자의 콘택홀 및 그 제조방법

Publications (1)

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KR940010245A true KR940010245A (ko) 1994-05-24

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KR1019920019736A Withdrawn KR940010245A (ko) 1992-10-26 1992-10-26 반도체소자의 콘택홀 및 그 제조방법

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990078843A (ko) * 1999-08-12 1999-11-05 최운용 참숯을 이용한 콩나물의 재배방법
KR20010001176A (ko) * 1999-06-02 2001-01-05 나종귀 왕겨와 볏짚을 이용한 콩나물 재배방법
KR100307740B1 (ko) * 1999-06-08 2001-09-24 조익수 참나무 숯 콩나물 재배방법
KR100307741B1 (ko) * 1999-06-08 2001-09-24 조익수 대나무 숯 콩나물 재배방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010001176A (ko) * 1999-06-02 2001-01-05 나종귀 왕겨와 볏짚을 이용한 콩나물 재배방법
KR100307740B1 (ko) * 1999-06-08 2001-09-24 조익수 참나무 숯 콩나물 재배방법
KR100307741B1 (ko) * 1999-06-08 2001-09-24 조익수 대나무 숯 콩나물 재배방법
KR19990078843A (ko) * 1999-08-12 1999-11-05 최운용 참숯을 이용한 콩나물의 재배방법

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