KR970077182A - 반도체 이온주입설비의 이온발생장치 - Google Patents
반도체 이온주입설비의 이온발생장치 Download PDFInfo
- Publication number
- KR970077182A KR970077182A KR1019960015150A KR19960015150A KR970077182A KR 970077182 A KR970077182 A KR 970077182A KR 1019960015150 A KR1019960015150 A KR 1019960015150A KR 19960015150 A KR19960015150 A KR 19960015150A KR 970077182 A KR970077182 A KR 970077182A
- Authority
- KR
- South Korea
- Prior art keywords
- base plate
- filament
- ion
- generating device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960015150A KR970077182A (ko) | 1996-05-08 | 1996-05-08 | 반도체 이온주입설비의 이온발생장치 |
| JP8239089A JPH09306372A (ja) | 1996-05-08 | 1996-09-10 | 半導体イオン注入設備のイオン発生装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960015150A KR970077182A (ko) | 1996-05-08 | 1996-05-08 | 반도체 이온주입설비의 이온발생장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970077182A true KR970077182A (ko) | 1997-12-12 |
Family
ID=19458134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960015150A Abandoned KR970077182A (ko) | 1996-05-08 | 1996-05-08 | 반도체 이온주입설비의 이온발생장치 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH09306372A (ja) |
| KR (1) | KR970077182A (ja) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2131051B (en) * | 1982-05-07 | 1985-10-23 | Inst Mash Im A A Blagonravova | Method for chemical heat treatment of parts made of steels and alloys |
| JPH08111198A (ja) * | 1994-10-11 | 1996-04-30 | Ulvac Japan Ltd | イオン源 |
-
1996
- 1996-05-08 KR KR1019960015150A patent/KR970077182A/ko not_active Abandoned
- 1996-09-10 JP JP8239089A patent/JPH09306372A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09306372A (ja) | 1997-11-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR960019509A (ko) | 이온주입실에 이용되는 이온발생 소오스 | |
| US5856674A (en) | Filament for ion implanter plasma shower | |
| KR970077182A (ko) | 반도체 이온주입설비의 이온발생장치 | |
| KR100584791B1 (ko) | 이온 소스 및 이를 갖는 이온 주입 장치 | |
| JPH1125872A (ja) | イオン発生装置 | |
| KR20000031240A (ko) | 이온주입설비의 아크챔버 | |
| KR940009319B1 (ko) | 이온원장치 | |
| KR20000020764A (ko) | 이온 주입설비의 이온 발생장치 | |
| KR0140522B1 (ko) | 전자비임여기 이온원 | |
| KR100195229B1 (ko) | 이온 소오스 어셈블리의 인슐레이터 | |
| KR20010056958A (ko) | 이온 주입 공정용 필라멘트 및 애노드의 절연 장치 | |
| KR20000026687A (ko) | 반도체 이온주입설비의 유도전극조립체 | |
| KR20010037303A (ko) | 이온 발생 장치 내의 열전자 방출 장치 | |
| KR0156315B1 (ko) | 반도체 이온주입장비의 클램핑 포스트 | |
| KR19990026931A (ko) | 반도체 이온주입설비의 필라멘트 인서트 | |
| KR200288468Y1 (ko) | 버나스형 필라멘트 시스템을 적용한 이온주입장치 | |
| KR20050038759A (ko) | 이온주입장치의 이온소스부 | |
| KR20040099860A (ko) | 이온주입장치 | |
| SU1118222A1 (ru) | Источник электронов | |
| KR19980025738A (ko) | 반도체 일렉트론 플로드 건(Electron flood Gun)의 필라멘트 지지부 | |
| KR20030070992A (ko) | 반도체 임플랜터 설비의 필라멘트 절연 장치 | |
| KR20000024901A (ko) | 이온 주입기의 이온 소오스 모듈 | |
| KR20050058755A (ko) | 이온주입장치의 필라멘트 보호용 절연체 | |
| KR20000026276A (ko) | 이온주입장치의 소오스 헤드 구조 | |
| KR20000075103A (ko) | 개선된 소스 헤드를 갖는 이온 주입 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| PC1901 | Submission of document of abandonment after decision of registration |
St.27 status event code: N-1-6-B10-B11-nap-PC1901 |
|
| SUBM | Surrender of laid-open application requested | ||
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |