KR970077228A - 반도체 장치 및 반도체 장치를 포함하는 구조물 - Google Patents

반도체 장치 및 반도체 장치를 포함하는 구조물 Download PDF

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Publication number
KR970077228A
KR970077228A KR1019970021649A KR19970021649A KR970077228A KR 970077228 A KR970077228 A KR 970077228A KR 1019970021649 A KR1019970021649 A KR 1019970021649A KR 19970021649 A KR19970021649 A KR 19970021649A KR 970077228 A KR970077228 A KR 970077228A
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South Korea
Prior art keywords
semiconductor substrate
substrate
semiconductor device
semiconductor
wiring
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Ceased
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KR1019970021649A
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Inventor
세이지 니시
도모지 하마다
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사와무라 시꼬
오끼덴끼고오교 가부시끼가이샤
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Publication of KR970077228A publication Critical patent/KR970077228A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]

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  • Junction Field-Effect Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Apparatus Associated With Microorganisms And Enzymes (AREA)

Abstract

본 발명의 반도체 장치는 마이크로웨이브 회로에 적절하며, 반도체 기판내에 형성된다. 상기 반도체 장치는 반도체 기판상에 표면배선을 가지며, 관통공 배선을 사용하여 표면배선과 접속되는 배면배선도 갖는다. 본 발명의 구조물은, 마이크로웨이브 회로에 적절하고 반도체 기판내에 형성되는, 반도체 소자로 구성되는 반도체장치를 포함하며, 상기 반도체 장치는 반도체 기판상에 표면배선을 가지며, 상기 반도체 기판은 관통공배선 및 그 표면에 표면배선을 갖는 절연기판에 의해 표면배선과 접속되는 배면배선을 가지며, 상기 표면배선은 상기 반도체 장치의 배면배선에 부착된다.

Description

반도체 장치 및 반도체 장치를 포함하는 구조물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 따른 반도체 장치를 포함하는 구조의 개략 단면도.

Claims (7)

  1. 반도체기판을 구비하는 반도체 장치로서, 상기 반도체기판이 상기 반도체기판의 상부 영역에 형성되는 하나 이상의 능동 소자; 상기 반도체기판의 상면상에 배열되는 와이어로서, 상기 능동 소자의 단자와 접속되는 다수의 상기 와이어; 상기 반도체기판의 배면상에 배열되는 다수의 배면 전극; 및 상기 반도체기판을 관통하는 관통공 내에 배열되는 관통공배선으로서, 상기 와이어와 상기 배면전극을 접속하는 다수의 상기 관통공배선을 추가로 구비하는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 반도체기판이 GaAs기판인 것을 특징으로 하는 반도체 장치.
  3. 제1항 또는 제2항에 있어서, 상기 능동 소자가 전계효과트랜지스터, HEMT, 다이오드 또는 쌍극성 트랜지스터인 것을 특징으로 하는 반도체 장치.
  4. 상기 반도체기판의 상부 영역에 형성되는 하나 이상의 능동 소자, 상기 반도체기판의 상면상에 배열되는 와이어로서, 상기 능동 소자의 단자와 접속되는 다수의 상기 와이어, 상기 반도체기판의 배면상에 배열되는 다수의 배면 전극, 및 상기 반도체기판을 관통하는 관통공 내에 배열되는 관통공배선으로서, 상기 와이어와 상기 배면전극을 접속하는 다수의 상기 관통공배선을 추가로 구비하는 반도체기판; 및 상기 반도체 장치의 상기 배면전극과 접속되는 배선으로서, 상기 절연기판의 상면상에 형성되는 다수의 상기 배선을 구비하는 절연기판을 포함하는 것을 특징으로 하는 반도체 장치를 포함하는 구조물.
  5. 제4항에 있어서, 상기 반도체기판이 GaAs기판인 것을 특징으로 하는 반도체 장치를 포함하는 구조물.
  6. 제4항 또는 제5항에 있어서, 상기 능동 소자가 전계효과트랜지스터, HEMT, 다이오드 또는 쌍극성 트랜지스터인 것을 특징으로 하는 반도체 장치를 포함하는 구조물.
  7. 제4항 또는 제5항에 있어서, 상기 절연기판은 금속층으로 배접된 알루미나 기판의 적층된 기판인 것을 특징으로 하는 반도체 장치를 포함하는 구조물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970021649A 1996-05-30 1997-05-29 반도체 장치 및 반도체 장치를 포함하는 구조물 Ceased KR970077228A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-137243 1996-05-30
JP13724396A JPH09321175A (ja) 1996-05-30 1996-05-30 マイクロ波回路及びチップ

Publications (1)

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KR970077228A true KR970077228A (ko) 1997-12-12

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US (1) US5949140A (ko)
JP (1) JPH09321175A (ko)
KR (1) KR970077228A (ko)
SG (1) SG55316A1 (ko)
TW (1) TW366604B (ko)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3695893B2 (ja) * 1996-12-03 2005-09-14 沖電気工業株式会社 半導体装置とその製造方法および実装方法
CN1106036C (zh) * 1997-05-15 2003-04-16 日本电气株式会社 芯片型半导体装置的制造方法
US6175287B1 (en) * 1997-05-28 2001-01-16 Raytheon Company Direct backside interconnect for multiple chip assemblies
US6483406B1 (en) * 1998-07-31 2002-11-19 Kyocera Corporation High-frequency module using slot coupling
JP3526788B2 (ja) * 1999-07-01 2004-05-17 沖電気工業株式会社 半導体装置の製造方法
US6507110B1 (en) 2000-03-08 2003-01-14 Teledyne Technologies Incorporated Microwave device and method for making same
JP3879816B2 (ja) 2000-06-02 2007-02-14 セイコーエプソン株式会社 半導体装置及びその製造方法、積層型半導体装置、回路基板並びに電子機器
US7271491B1 (en) * 2000-08-31 2007-09-18 Micron Technology, Inc. Carrier for wafer-scale package and wafer-scale package including the carrier
US6580107B2 (en) * 2000-10-10 2003-06-17 Sanyo Electric Co., Ltd. Compound semiconductor device with depletion layer stop region
JP4422323B2 (ja) * 2000-12-15 2010-02-24 株式会社ルネサステクノロジ 半導体装置
US6838393B2 (en) 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
US6890850B2 (en) 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US7414858B2 (en) * 2002-04-11 2008-08-19 Koninklijke Philips Electronics N.V. Method of manufacturing an electronic device
US6933603B2 (en) * 2002-07-11 2005-08-23 Teledyne Technologies Incorporated Multi-substrate layer semiconductor packages and method for making same
US7535100B2 (en) * 2002-07-12 2009-05-19 The United States Of America As Represented By The Secretary Of The Navy Wafer bonding of thinned electronic materials and circuits to high performance substrates
US6800930B2 (en) 2002-07-31 2004-10-05 Micron Technology, Inc. Semiconductor dice having back side redistribution layer accessed using through-silicon vias, and assemblies
US7110165B2 (en) * 2002-10-29 2006-09-19 Wavestream Wireless Technologies Power management for spatial power combiners
US20040088855A1 (en) * 2002-11-11 2004-05-13 Salman Akram Interposers for chip-scale packages, chip-scale packages including the interposers, test apparatus for effecting wafer-level testing of the chip-scale packages, and methods
JP2004186422A (ja) * 2002-12-03 2004-07-02 Shinko Electric Ind Co Ltd 電子部品実装構造及びその製造方法
US6825559B2 (en) 2003-01-02 2004-11-30 Cree, Inc. Group III nitride based flip-chip intergrated circuit and method for fabricating
US6838332B1 (en) * 2003-08-15 2005-01-04 Freescale Semiconductor, Inc. Method for forming a semiconductor device having electrical contact from opposite sides
US7477943B2 (en) * 2003-11-26 2009-01-13 Medtronic, Inc. Medical device and method of manufacturing
JP4850392B2 (ja) * 2004-02-17 2012-01-11 三洋電機株式会社 半導体装置の製造方法
US7030041B2 (en) 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US7166877B2 (en) * 2004-07-30 2007-01-23 Bae Systems Information And Electronic Systems Integration Inc. High frequency via
US7112882B2 (en) * 2004-08-25 2006-09-26 Taiwan Semiconductor Manufacturing Co., Ltd. Structures and methods for heat dissipation of semiconductor integrated circuits
US7419852B2 (en) 2004-08-27 2008-09-02 Micron Technology, Inc. Low temperature methods of forming back side redistribution layers in association with through wafer interconnects, semiconductor devices including same, and assemblies
JP4443379B2 (ja) * 2004-10-26 2010-03-31 三洋電機株式会社 半導体装置の製造方法
TWI303864B (en) 2004-10-26 2008-12-01 Sanyo Electric Co Semiconductor device and method for making the same
JP4873517B2 (ja) * 2004-10-28 2012-02-08 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
US7485967B2 (en) * 2005-03-10 2009-02-03 Sanyo Electric Co., Ltd. Semiconductor device with via hole for electric connection
TWI269419B (en) * 2005-06-09 2006-12-21 Advanced Semiconductor Eng Method for forming wafer-level heat spreader structure and packaging structure thereof
US20070090156A1 (en) * 2005-10-25 2007-04-26 Ramanathan Lakshmi N Method for forming solder contacts on mounted substrates
US7723224B2 (en) * 2006-06-14 2010-05-25 Freescale Semiconductor, Inc. Microelectronic assembly with back side metallization and method for forming the same
JP4773307B2 (ja) * 2006-09-15 2011-09-14 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
JP5117698B2 (ja) * 2006-09-27 2013-01-16 ルネサスエレクトロニクス株式会社 半導体装置
US7656236B2 (en) 2007-05-15 2010-02-02 Teledyne Wireless, Llc Noise canceling technique for frequency synthesizer
US8111001B2 (en) 2007-07-17 2012-02-07 Cree, Inc. LED with integrated constant current driver
US7973413B2 (en) * 2007-08-24 2011-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Through-substrate via for semiconductor device
US7911066B2 (en) 2007-08-29 2011-03-22 Agilent Technologies, Inc. Through-chip via interconnects for stacked integrated circuit structures
US8179045B2 (en) 2008-04-22 2012-05-15 Teledyne Wireless, Llc Slow wave structure having offset projections comprised of a metal-dielectric composite stack
US20090294985A1 (en) * 2008-05-29 2009-12-03 Gomez Jocel P Thin chip scale semiconductor package
US8043965B2 (en) * 2009-02-11 2011-10-25 Northrop Grumann Systems Corporation Method of forming a through substrate via in a compound semiconductor
US9093420B2 (en) 2012-04-18 2015-07-28 Rf Micro Devices, Inc. Methods for fabricating high voltage field effect transistor finger terminations
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US9142620B2 (en) * 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US8988097B2 (en) 2012-08-24 2015-03-24 Rf Micro Devices, Inc. Method for on-wafer high voltage testing of semiconductor devices
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
WO2014035794A1 (en) 2012-08-27 2014-03-06 Rf Micro Devices, Inc Lateral semiconductor device with vertical breakdown region
KR101935502B1 (ko) * 2012-08-30 2019-04-03 에스케이하이닉스 주식회사 반도체 칩 및 이를 갖는 반도체 패키지
US9325281B2 (en) 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
JP2014197654A (ja) * 2013-03-07 2014-10-16 株式会社東芝 半導体装置
US9202660B2 (en) 2013-03-13 2015-12-01 Teledyne Wireless, Llc Asymmetrical slow wave structures to eliminate backward wave oscillations in wideband traveling wave tubes
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US11411099B2 (en) * 2019-05-28 2022-08-09 Glc Semiconductor Group (Cq) Co., Ltd. Semiconductor device
CN114334918A (zh) * 2021-12-28 2022-04-12 厦门市三安集成电路有限公司 混合单片微波集成电路及其制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3670218A (en) * 1971-08-02 1972-06-13 North American Rockwell Monolithic heteroepitaxial microwave tunnel die
JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof
JPS59172748A (ja) * 1983-03-22 1984-09-29 Mitsubishi Electric Corp マイクロ波用電界効果トランジスタ
JPH038352A (ja) * 1989-06-06 1991-01-16 Shinko Electric Ind Co Ltd 半導体装置
US5202752A (en) * 1990-05-16 1993-04-13 Nec Corporation Monolithic integrated circuit device
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
JPH06125208A (ja) * 1992-10-09 1994-05-06 Mitsubishi Electric Corp マイクロ波集積回路およびその製造方法
US5477088A (en) * 1993-05-12 1995-12-19 Rockett; Angus A. Multi-phase back contacts for CIS solar cells
US5635762A (en) * 1993-05-18 1997-06-03 U.S. Philips Corporation Flip chip semiconductor device with dual purpose metallized ground conductor
US5446316A (en) * 1994-01-06 1995-08-29 Harris Corporation Hermetic package for a high power semiconductor device
JPH0897375A (ja) * 1994-07-26 1996-04-12 Toshiba Corp マイクロ波集積回路装置及びその製造方法
DE69524730T2 (de) * 1994-10-31 2002-08-22 Koninklijke Philips Electronics N.V., Eindhoven Verfahren zur Herstellung einer Halbleitervorrichtung für Mikrowellen

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Publication number Publication date
US5949140A (en) 1999-09-07
JPH09321175A (ja) 1997-12-12
SG55316A1 (en) 1998-12-21
TW366604B (en) 1999-08-11

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