KR970077700A - 박층의 반도체 재료를 제조하는 방법 - Google Patents

박층의 반도체 재료를 제조하는 방법 Download PDF

Info

Publication number
KR970077700A
KR970077700A KR1019970018788A KR19970018788A KR970077700A KR 970077700 A KR970077700 A KR 970077700A KR 1019970018788 A KR1019970018788 A KR 1019970018788A KR 19970018788 A KR19970018788 A KR 19970018788A KR 970077700 A KR970077700 A KR 970077700A
Authority
KR
South Korea
Prior art keywords
semiconductor material
wafer
thin layer
manufacturing
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019970018788A
Other languages
English (en)
Other versions
KR100704107B1 (ko
Inventor
버나드 아스파
미쉘 브리엘
씨에리 포메이로
Original Assignee
삐에르 쇼위죠
꼼미싸레 아 라네르기 아토미크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9492177&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR970077700(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 삐에르 쇼위죠, 꼼미싸레 아 라네르기 아토미크 filed Critical 삐에르 쇼위죠
Publication of KR970077700A publication Critical patent/KR970077700A/ko
Application granted granted Critical
Publication of KR100704107B1 publication Critical patent/KR100704107B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70541—Tagging, i.e. hardware or software tagging of features or components, e.g. using tagging scripts or tagging identifier codes for identification of chips, shots or wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H10P54/50—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving
    • H10P54/52—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving by cleaving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Micromachines (AREA)

Abstract

본 발명은 박층의 반도체 재료를 제조하는 방법에 관한 것으로, 본 발명에 따른 박층의 반도체 재료의 제조방법은, 반도체 웨이퍼(wafer) 평탄면(2)를 통하여 이온을 주입하여 미소공동(microcavity)층을 형성하는 단계로서, 이온 선량(ion dose)이 상기한 평탄면에 기포가 형성되지 않도록 하는 특정 범위 내에 있는 단계; 미소공동(microcavity)을 유착시키는 열처리 단계; 박층(6)에 적어도 하나의 전자부품(electronic component)을 형성하는 단계; 및 웨이퍼의 나머지 부분으로부터 박층(6)을 분리하는 단계를 포함하는 것으로 특징으로 한다.

Description

박층의 반도체 재료를 제조하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명에 따른 방법에 있어서, 웨이퍼를 두 부분으로 분리시키는 단계를 도시한 개략도이다.

Claims (12)

  1. 평탄면을 지닌 상기한 반도체 재료 웨이퍼로부터 박층의 반도체 재료를 제조하는 방법으로서, 상기한 평탄면에 비활성 기체 이온 또는 수소 이온 중에서 선택된 이온을, 특정 온도와 특정 선량으로 조사하여, 이온들의 평균 투과 깊이에 근사한 깊이에 위치한 소위 기준면(reference plane)이라는 평면에 미소공동을 형성하는 이온 주입 단계; 및 상기한 기준면을 따라, 웨이퍼를 두 부분으로 분리하기에 충분한 온도에서 열처리하여, 박층을 구성하는 평탄면의 한쪽에 위치한 부분을 분리하는 열처리 단계를 포함하며; -상기한 이온 주입 단계는, 기준면을 따라 웨이퍼를 분열시키기에 충분한 미소공동을 생성할 수 있는 최저 선량과, 열처리 단계에서 웨이퍼의 분리가 일어나게 하고 최고 선량 즉, 임계 선량(critical dose)과의 사이의 이온 선량으로 수행되며; -열처리 단계 후에, 혹은 열처리 단계 중에, 기준면을 따라, 웨이퍼를 두 부분으로 분리는 분리 단계가 제공되며, 이 분리 단계는 웨이퍼의 두 부분 사이에 기계적 힘을 인가하여 수행됨을 특징으로 하는 박층의 반도체 재료의 제조 방법.
  2. 제1항에 있어서, 열처리 단계와 분리 단계와의 사이에서, 박층을 형성하기 전에, 웨이퍼의 일부에 적어도 하나의 전자 부품 전부 또는 일부를 배설하는 단계를 포함하는 것을 특징으로 하는 박층의 반도체 재료의 제조 방법.
  3. 제2항에 있어서, 상기 한 전자부품은 상기한 열처리 단계에서의 온도보다 더 낮은 온도에서 열처리하여 배설됨을 특징으로 하는 박층의 반도체 재료의 제조 방법.
  4. 제1항에 있어서, 분리 단계 직전에, 상기한 웨이퍼를 상기한 평탄면 측에서, 지지체에 밀착시켜 단단하게 고정시키는 추가 공정을 더 포함하며, 이 지지체를 통해 기계적인 힘이 인가됨을 특징으로 하는 박층의 반도체 제조 방법.
  5. 제4항에 있어서, 상기한 지지체는 유연성 지지체임을 특징으로 하는 박층의 반도체 재료의 제조 방법.
  6. 제5항에 있어서, 상기한 유연성 지지체는 Kapton(R)시트임을 특징으로 하는 박층의 반도체 재료의 제조 방법.
  7. 제4항에 있어서, 상기한 지지체는 강성의 지지체임을 특징으로 하는 박층의 반도체 재료의 제조 방법.
  8. 제7항에 있어서, 상기한 강성의 지지체는 산화처리된 실리콘 웨이퍼임을 특징으로 하는 박층의 반도체 재료의 제조 방법.
  9. 제1항에 있어서, 상기한 반도체 재료 웨이퍼는 단결정성 실리콘으로 구성됨을 특징으로 하는 박층의 반도체 재료의 제조 방법.
  10. 제1항에 있어서, 상기한 반도체 재료 웨이퍼는 비반도체 재료층으로 피복되어 있음을 특징으로 하는 박층의 반도체 재료의 제조 방법.
  11. 제10항에 있어서, 비반도체 재료는 유전체 재료임을 특징으로 하는 박층의 반도체 재료의 제조 방법.
  12. 제1항 내지 제11항 중 어느 한 항에 있어서, 분리 단계에서 인가되는 기계적 힘은 인장력 및/또는 전단 응력 및/또는 굽힙력임을 특징으로 하는 박층의 반도체 재료의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970018788A 1996-05-15 1997-05-15 박층의반도체재료를제조하는방법 Expired - Lifetime KR100704107B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9606086 1996-05-15
FR96-06086 1996-05-15
FR9606086A FR2748851B1 (fr) 1996-05-15 1996-05-15 Procede de realisation d'une couche mince de materiau semiconducteur

Publications (2)

Publication Number Publication Date
KR970077700A true KR970077700A (ko) 1997-12-12
KR100704107B1 KR100704107B1 (ko) 2007-07-06

Family

ID=9492177

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970018788A Expired - Lifetime KR100704107B1 (ko) 1996-05-15 1997-05-15 박층의반도체재료를제조하는방법

Country Status (9)

Country Link
US (7) US6020252A (ko)
EP (2) EP1768176A3 (ko)
JP (2) JP3517080B2 (ko)
KR (1) KR100704107B1 (ko)
DE (1) DE69738608T2 (ko)
FR (1) FR2748851B1 (ko)
MY (1) MY125679A (ko)
SG (1) SG52966A1 (ko)
TW (1) TW366527B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100742790B1 (ko) * 2000-04-14 2007-07-25 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 특히 반도체 재료(들)로 제조된 기판 또는 잉곳에서 적어도 하나의 박층을 절단하는 방법 및 장치

Families Citing this family (463)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW374196B (en) 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US20050280155A1 (en) * 2004-06-21 2005-12-22 Sang-Yun Lee Semiconductor bonding and layer transfer method
US8018058B2 (en) * 2004-06-21 2011-09-13 Besang Inc. Semiconductor memory device
US8058142B2 (en) * 1996-11-04 2011-11-15 Besang Inc. Bonded semiconductor structure and method of making the same
US7052941B2 (en) * 2003-06-24 2006-05-30 Sang-Yun Lee Method for making a three-dimensional integrated circuit structure
FR2755537B1 (fr) * 1996-11-05 1999-03-05 Commissariat Energie Atomique Procede de fabrication d'un film mince sur un support et structure ainsi obtenue
SG71094A1 (en) * 1997-03-26 2000-03-21 Canon Kk Thin film formation using laser beam heating to separate layers
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6582999B2 (en) 1997-05-12 2003-06-24 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
DE69733471D1 (de) * 1997-07-03 2005-07-14 St Microelectronics Srl Verfahren zur Herstellung von Geräten in einem halbleitenden Substrat
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
US6548382B1 (en) * 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
MY118019A (en) * 1998-02-18 2004-08-30 Canon Kk Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
US7227176B2 (en) 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6054370A (en) * 1998-06-30 2000-04-25 Intel Corporation Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer
JP3395661B2 (ja) * 1998-07-07 2003-04-14 信越半導体株式会社 Ｓｏｉウエーハの製造方法
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
DE19837944A1 (de) * 1998-08-21 2000-02-24 Asea Brown Boveri Verfahren zur Fertigung eines Halbleiterbauelements
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
FR2784795B1 (fr) * 1998-10-16 2000-12-01 Commissariat Energie Atomique Structure comportant une couche mince de materiau composee de zones conductrices et de zones isolantes et procede de fabrication d'une telle structure
FR2784794A1 (fr) * 1998-10-20 2000-04-21 Commissariat Energie Atomique Structure comportant une couche semiconducteur et/ou des elements electroniques sur un support isolant et son procede de fabrication
US6555443B1 (en) * 1998-11-11 2003-04-29 Robert Bosch Gmbh Method for production of a thin film and a thin-film solar cell, in particular, on a carrier substrate
DE19936941B4 (de) * 1998-11-11 2008-11-06 Robert Bosch Gmbh Verfahren zur Herstellung dünner Schichten, insbesondere Dünnschichtsolarzellen, auf einem Trägersubstrat
US20050124142A1 (en) * 1998-12-31 2005-06-09 Bower Robert W. Transposed split of ion cut materials
US6534381B2 (en) * 1999-01-08 2003-03-18 Silicon Genesis Corporation Method for fabricating multi-layered substrates
US6355541B1 (en) * 1999-04-21 2002-03-12 Lockheed Martin Energy Research Corporation Method for transfer of thin-film of silicon carbide via implantation and wafer bonding
JP2001015721A (ja) * 1999-04-30 2001-01-19 Canon Inc 複合部材の分離方法及び薄膜の製造方法
US6162702A (en) * 1999-06-17 2000-12-19 Intersil Corporation Self-supported ultra thin silicon wafer process
FR2795866B1 (fr) 1999-06-30 2001-08-17 Commissariat Energie Atomique Procede de realisation d'une membrane mince et structure a membrane ainsi obtenue
FR2797347B1 (fr) * 1999-08-04 2001-11-23 Commissariat Energie Atomique Procede de transfert d'une couche mince comportant une etape de surfragililisation
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
EP1939932A1 (en) 1999-08-10 2008-07-02 Silicon Genesis Corporation A substrate comprising a stressed silicon germanium cleave layer
FR2797713B1 (fr) 1999-08-20 2002-08-02 Soitec Silicon On Insulator Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede
FR2802340B1 (fr) * 1999-12-13 2003-09-05 Commissariat Energie Atomique Structure comportant des cellules photovoltaiques et procede de realisation
JP2001189288A (ja) * 1999-12-20 2001-07-10 Ind Technol Res Inst イオン注入利用の基板ダイシング法
US7427526B2 (en) * 1999-12-20 2008-09-23 The Penn State Research Foundation Deposited thin films and their use in separation and sacrificial layer applications
US6544862B1 (en) 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
TW452866B (en) * 2000-02-25 2001-09-01 Lee Tien Hsi Manufacturing method of thin film on a substrate
US6709955B2 (en) * 2000-04-17 2004-03-23 Stmicroelectronics S.R.L. Method of fabricating electronic devices integrated in semiconductor substrates provided with gettering sites, and a device fabricated by the method
FR2809867B1 (fr) * 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
JP3580227B2 (ja) * 2000-06-21 2004-10-20 三菱住友シリコン株式会社 複合基板の分離方法及び分離装置
FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
ATE346410T1 (de) 2000-08-04 2006-12-15 Amberwave Systems Corp Siliziumwafer mit monolithischen optoelektronischen komponenten
EP1309989B1 (en) * 2000-08-16 2007-01-10 Massachusetts Institute Of Technology Process for producing semiconductor article using graded expitaxial growth
FR2816445B1 (fr) 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
FR2840731B3 (fr) * 2002-06-11 2004-07-30 Soitec Silicon On Insulator Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees
FR2894990B1 (fr) * 2005-12-21 2008-02-22 Soitec Silicon On Insulator Procede de fabrication de substrats, notamment pour l'optique,l'electronique ou l'optoelectronique et substrat obtenu selon ledit procede
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
JP3957038B2 (ja) * 2000-11-28 2007-08-08 シャープ株式会社 半導体基板及びその作製方法
US7094667B1 (en) 2000-12-28 2006-08-22 Bower Robert W Smooth thin film layers produced by low temperature hydrogen ion cut
FR2821697B1 (fr) * 2001-03-02 2004-06-25 Commissariat Energie Atomique Procede de fabrication de couches minces sur un support specifique et une application
JP4749584B2 (ja) * 2001-03-30 2011-08-17 株式会社豊田中央研究所 半導体基板の製造方法
WO2002082514A1 (en) * 2001-04-04 2002-10-17 Massachusetts Institute Of Technology A method for semiconductor device fabrication
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US20050026432A1 (en) * 2001-04-17 2005-02-03 Atwater Harry A. Wafer bonded epitaxial templates for silicon heterostructures
WO2002084725A1 (en) 2001-04-17 2002-10-24 California Institute Of Technology A method of using a germanium layer transfer to si for photovoltaic applications and heterostructure made thereby
US7238622B2 (en) * 2001-04-17 2007-07-03 California Institute Of Technology Wafer bonded virtual substrate and method for forming the same
US7045878B2 (en) * 2001-05-18 2006-05-16 Reveo, Inc. Selectively bonded thin film layer and substrate layer for processing of useful devices
US6956268B2 (en) * 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
DE10131249A1 (de) 2001-06-28 2002-05-23 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Films oder einer Schicht aus halbleitendem Material
JP4102040B2 (ja) * 2001-07-31 2008-06-18 信越半導体株式会社 Ｓｏｉウェーハの製造方法およびウェーハ分離治具
FR2828762B1 (fr) * 2001-08-14 2003-12-05 Soitec Silicon On Insulator Procede d'obtention d'une couche mince d'un materiau semi-conducteur supportant au moins un composant et/ou circuit electronique
US20090065471A1 (en) * 2003-02-10 2009-03-12 Faris Sadeg M Micro-nozzle, nano-nozzle, manufacturing methods therefor, applications therefor
US7033910B2 (en) * 2001-09-12 2006-04-25 Reveo, Inc. Method of fabricating multi layer MEMS and microfluidic devices
US6875671B2 (en) * 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
US7163826B2 (en) 2001-09-12 2007-01-16 Reveo, Inc Method of fabricating multi layer devices on buried oxide layer substrates
US6555451B1 (en) 2001-09-28 2003-04-29 The United States Of America As Represented By The Secretary Of The Navy Method for making shallow diffusion junctions in semiconductors using elemental doping
FR2830983B1 (fr) 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
US6593212B1 (en) 2001-10-29 2003-07-15 The United States Of America As Represented By The Secretary Of The Navy Method for making electro-optical devices using a hydrogenion splitting technique
WO2003060986A2 (en) * 2002-01-11 2003-07-24 The Pennsylvania State University Method of forming a removable support with a sacrificial layers and of transferring devices
US6562127B1 (en) 2002-01-16 2003-05-13 The United States Of America As Represented By The Secretary Of The Navy Method of making mosaic array of thin semiconductor material of large substrates
FR2835097B1 (fr) * 2002-01-23 2005-10-14 Procede optimise de report d'une couche mince de carbure de silicium sur un substrat d'accueil
AU2003222003A1 (en) * 2002-03-14 2003-09-29 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates
US6607969B1 (en) 2002-03-18 2003-08-19 The United States Of America As Represented By The Secretary Of The Navy Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques
FR2837981B1 (fr) * 2002-03-28 2005-01-07 Commissariat Energie Atomique Procede de manipulation de couches semiconductrices pour leur amincissement
US6767749B2 (en) 2002-04-22 2004-07-27 The United States Of America As Represented By The Secretary Of The Navy Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
JP4277481B2 (ja) * 2002-05-08 2009-06-10 日本電気株式会社 半導体基板の製造方法、半導体装置の製造方法
TW200406811A (en) * 2002-06-03 2004-05-01 Tien-Hsi Lee Transferring method of a layer onto a substrate
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US7307273B2 (en) * 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US7335545B2 (en) * 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
FR2842650B1 (fr) * 2002-07-17 2005-09-02 Soitec Silicon On Insulator Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique
US6979630B2 (en) * 2002-08-08 2005-12-27 Isonics Corporation Method and apparatus for transferring a thin layer of semiconductor material
WO2004034453A1 (en) 2002-10-04 2004-04-22 Silicon Genesis Corporation Method for treating semiconductor material
US8187377B2 (en) * 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2845518B1 (fr) 2002-10-07 2005-10-14 Commissariat Energie Atomique Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur
FR2845517B1 (fr) * 2002-10-07 2005-05-06 Commissariat Energie Atomique Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur
JP4556158B2 (ja) * 2002-10-22 2010-10-06 株式会社Sumco 貼り合わせｓｏｉ基板の製造方法および半導体装置
FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
US7056815B1 (en) * 2002-11-12 2006-06-06 The Regents Of The University Of Michigan Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
US20100133695A1 (en) * 2003-01-12 2010-06-03 Sang-Yun Lee Electronic circuit with embedded memory
FR2850390B1 (fr) * 2003-01-24 2006-07-14 Soitec Silicon On Insulator Procede d'elimination d'une zone peripherique de colle lors de la fabrication d'un substrat composite
US7122095B2 (en) 2003-03-14 2006-10-17 S.O.I.Tec Silicon On Insulator Technologies S.A. Methods for forming an assembly for transfer of a useful layer
JP4509488B2 (ja) 2003-04-02 2010-07-21 株式会社Sumco 貼り合わせ基板の製造方法
EP1482548B1 (en) 2003-05-26 2016-04-13 Soitec A method of manufacturing a wafer
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
US8071438B2 (en) * 2003-06-24 2011-12-06 Besang Inc. Semiconductor circuit
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2859312B1 (fr) * 2003-09-02 2006-02-17 Soitec Silicon On Insulator Scellement metallique multifonction
US8475693B2 (en) * 2003-09-30 2013-07-02 Soitec Methods of making substrate structures having a weakened intermediate layer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
US6992025B2 (en) * 2004-01-12 2006-01-31 Sharp Laboratories Of America, Inc. Strained silicon on insulator from film transfer and relaxation by hydrogen implantation
EP1569263B1 (de) * 2004-02-27 2011-11-23 OSRAM Opto Semiconductors GmbH Verfahren zum Verbinden zweier Wafer
US7390724B2 (en) 2004-04-12 2008-06-24 Silicon Genesis Corporation Method and system for lattice space engineering
WO2005104192A2 (en) * 2004-04-21 2005-11-03 California Institute Of Technology A METHOD FOR THE FABRICATION OF GaAs/Si AND RELATED WAFER BONDED VIRTUAL SUBSTRATES
EP1605504B1 (en) * 2004-06-10 2011-05-25 S.O.I. Tec Silicon on Insulator Technologies S.A. Method for manufacturing a SOI wafer
DE102004030612B3 (de) 2004-06-24 2006-04-20 Siltronic Ag Halbleitersubstrat und Verfahren zu dessen Herstellung
US7094666B2 (en) * 2004-07-29 2006-08-22 Silicon Genesis Corporation Method and system for fabricating strained layers for the manufacture of integrated circuits
US20060021565A1 (en) * 2004-07-30 2006-02-02 Aonex Technologies, Inc. GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer
US7439152B2 (en) * 2004-08-27 2008-10-21 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7202124B2 (en) * 2004-10-01 2007-04-10 Massachusetts Institute Of Technology Strained gettering layers for semiconductor processes
US7846759B2 (en) * 2004-10-21 2010-12-07 Aonex Technologies, Inc. Multi-junction solar cells and methods of making same using layer transfer and bonding techniques
DE102004054564B4 (de) * 2004-11-11 2008-11-27 Siltronic Ag Halbleitersubstrat und Verfahren zu dessen Herstellung
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US7344957B2 (en) * 2005-01-19 2008-03-18 Texas Instruments Incorporated SOI wafer with cooling channels and a method of manufacture thereof
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
US20110143506A1 (en) * 2009-12-10 2011-06-16 Sang-Yun Lee Method for fabricating a semiconductor memory device
US8367524B2 (en) * 2005-03-29 2013-02-05 Sang-Yun Lee Three-dimensional integrated circuit structure
EP1864317A1 (en) * 2005-03-29 2007-12-12 S.O.I.Tec Silicon on Insulator Technologies Hybrid fully soi-type multilayer structure
TW200707799A (en) * 2005-04-21 2007-02-16 Aonex Technologies Inc Bonded intermediate substrate and method of making same
US20060240275A1 (en) * 2005-04-25 2006-10-26 Gadkaree Kishor P Flexible display substrates
US7897443B2 (en) * 2005-04-26 2011-03-01 Sharp Kabushiki Kaisha Production method of semiconductor device and semiconductor device
FR2886051B1 (fr) 2005-05-20 2007-08-10 Commissariat Energie Atomique Procede de detachement d'un film mince
US7674687B2 (en) * 2005-07-27 2010-03-09 Silicon Genesis Corporation Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
JP5064695B2 (ja) * 2006-02-16 2012-10-31 信越化学工業株式会社 Ｓｏｉ基板の製造方法
FR2898431B1 (fr) * 2006-03-13 2008-07-25 Soitec Silicon On Insulator Procede de fabrication de film mince
FR2899378B1 (fr) 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
US20070243703A1 (en) * 2006-04-14 2007-10-18 Aonex Technololgies, Inc. Processes and structures for epitaxial growth on laminate substrates
FR2914110B1 (fr) 2007-03-20 2009-06-05 Soitec Silicon On Insulator Procede de fabrication d'un substrat hybride
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
WO2008058252A2 (en) * 2006-11-08 2008-05-15 Silicon China (Hk) Limited System and method for a photovoltaic structure
JP2008153411A (ja) * 2006-12-18 2008-07-03 Shin Etsu Chem Co Ltd Ｓｏｉ基板の製造方法
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2910702B1 (fr) * 2006-12-26 2009-04-03 Soitec Silicon On Insulator Procede de fabrication d'un substrat mixte
WO2008123117A1 (en) * 2007-03-26 2008-10-16 Semiconductor Energy Laboratory Co., Ltd. Soi substrate and method for manufacturing soi substrate
WO2008123116A1 (en) * 2007-03-26 2008-10-16 Semiconductor Energy Laboratory Co., Ltd. Soi substrate and method for manufacturing soi substrate
WO2008132894A1 (en) 2007-04-13 2008-11-06 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing display device, and soi substrate
KR101447048B1 (ko) 2007-04-20 2014-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판 및 반도체장치의 제조방법
US7732301B1 (en) 2007-04-20 2010-06-08 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
US7867805B2 (en) * 2007-05-13 2011-01-11 International Business Machines Corporation Structure replication through ultra thin layer transfer
US9059247B2 (en) * 2007-05-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and method for manufacturing semiconductor device
TWI335046B (en) * 2007-05-25 2010-12-21 Univ Nat Taiwan Flexible electronic device and process for the same
US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
JP5367330B2 (ja) * 2007-09-14 2013-12-11 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び半導体装置の作製方法
US8236668B2 (en) * 2007-10-10 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
FR2922359B1 (fr) * 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2922681A1 (fr) * 2007-10-23 2009-04-24 Soitec Silicon On Insulator Procede de detachement d'un substrat.
JP5548351B2 (ja) * 2007-11-01 2014-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20090124038A1 (en) * 2007-11-14 2009-05-14 Mark Ewing Tuttle Imager device, camera, and method of manufacturing a back side illuminated imager
JP5464843B2 (ja) 2007-12-03 2014-04-09 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US20090159111A1 (en) * 2007-12-21 2009-06-25 The Woodside Group Pte. Ltd Photovoltaic device having a textured metal silicide layer
US20090162966A1 (en) * 2007-12-21 2009-06-25 The Woodside Group Pte Ltd Structure and method of formation of a solar cell
US8481845B2 (en) * 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
US8129613B2 (en) * 2008-02-05 2012-03-06 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having low base resistivity and method of making
US8563352B2 (en) * 2008-02-05 2013-10-22 Gtat Corporation Creation and translation of low-relief texture for a photovoltaic cell
US20090212397A1 (en) * 2008-02-22 2009-08-27 Mark Ewing Tuttle Ultrathin integrated circuit and method of manufacturing an ultrathin integrated circuit
FR2930072B1 (fr) * 2008-04-15 2010-08-20 Commissariat Energie Atomique Procede de transfert d'une couche mince par echange protonique.
US7749884B2 (en) * 2008-05-06 2010-07-06 Astrowatt, Inc. Method of forming an electronic device using a separation-enhancing species
EP2294607A2 (en) * 2008-05-17 2011-03-16 Astrowatt, Inc. Method of forming an electronic device using a separation technique
US8431966B2 (en) 2008-05-21 2013-04-30 Nxp B.V. Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby
US8049104B2 (en) * 2009-09-30 2011-11-01 Twin Creek Technologies, Inc. Intermetal stack for use in a photovoltaic cell
US8501522B2 (en) 2008-05-30 2013-08-06 Gtat Corporation Intermetal stack for use in a photovoltaic cell
US8207590B2 (en) * 2008-07-03 2012-06-26 Samsung Electronics Co., Ltd. Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods
US7902091B2 (en) * 2008-08-13 2011-03-08 Varian Semiconductor Equipment Associates, Inc. Cleaving of substrates
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
EP2324488B1 (en) * 2008-08-27 2013-02-13 Soitec Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters
US8815618B2 (en) * 2008-08-29 2014-08-26 Tsmc Solid State Lighting Ltd. Light-emitting diode on a conductive substrate
FR2935535B1 (fr) * 2008-09-02 2010-12-10 S O I Tec Silicon On Insulator Tech Procede de detourage mixte.
US8486771B2 (en) * 2008-09-24 2013-07-16 Soitec Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same
KR101408475B1 (ko) 2008-10-30 2014-06-19 소이텍 감소된 격자 변형을 갖는 반도체 재료층들, 반도체 구조들, 디바이스들 및 이를 포함하는 가공된 기판을 형성하는 방법들
US8637383B2 (en) 2010-12-23 2014-01-28 Soitec Strain relaxation using metal materials and related structures
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
FR2942073B1 (fr) * 2009-02-10 2011-04-29 Soitec Silicon On Insulator Procede de realisation d'une couche de cavites
US9711407B2 (en) * 2009-04-14 2017-07-18 Monolithic 3D Inc. Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer
US8427200B2 (en) 2009-04-14 2013-04-23 Monolithic 3D Inc. 3D semiconductor device
US8405420B2 (en) * 2009-04-14 2013-03-26 Monolithic 3D Inc. System comprising a semiconductor device and structure
US7986042B2 (en) 2009-04-14 2011-07-26 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8378715B2 (en) 2009-04-14 2013-02-19 Monolithic 3D Inc. Method to construct systems
US8669778B1 (en) 2009-04-14 2014-03-11 Monolithic 3D Inc. Method for design and manufacturing of a 3D semiconductor device
US8362482B2 (en) * 2009-04-14 2013-01-29 Monolithic 3D Inc. Semiconductor device and structure
US8754533B2 (en) * 2009-04-14 2014-06-17 Monolithic 3D Inc. Monolithic three-dimensional semiconductor device and structure
US8373439B2 (en) 2009-04-14 2013-02-12 Monolithic 3D Inc. 3D semiconductor device
US8362800B2 (en) 2010-10-13 2013-01-29 Monolithic 3D Inc. 3D semiconductor device including field repairable logics
US9577642B2 (en) 2009-04-14 2017-02-21 Monolithic 3D Inc. Method to form a 3D semiconductor device
US8395191B2 (en) 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US8058137B1 (en) 2009-04-14 2011-11-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8384426B2 (en) 2009-04-14 2013-02-26 Monolithic 3D Inc. Semiconductor device and structure
US8258810B2 (en) 2010-09-30 2012-09-04 Monolithic 3D Inc. 3D semiconductor device
US20110031997A1 (en) * 2009-04-14 2011-02-10 NuPGA Corporation Method for fabrication of a semiconductor device and structure
US9509313B2 (en) 2009-04-14 2016-11-29 Monolithic 3D Inc. 3D semiconductor device
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US20100310775A1 (en) * 2009-06-09 2010-12-09 International Business Machines Corporation Spalling for a Semiconductor Substrate
US8802477B2 (en) * 2009-06-09 2014-08-12 International Business Machines Corporation Heterojunction III-V photovoltaic cell fabrication
US8703521B2 (en) * 2009-06-09 2014-04-22 International Business Machines Corporation Multijunction photovoltaic cell fabrication
US8633097B2 (en) * 2009-06-09 2014-01-21 International Business Machines Corporation Single-junction photovoltaic cell
US20110048517A1 (en) * 2009-06-09 2011-03-03 International Business Machines Corporation Multijunction Photovoltaic Cell Fabrication
US7807570B1 (en) * 2009-06-11 2010-10-05 International Business Machines Corporation Local metallization and use thereof in semiconductor devices
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
US20110089429A1 (en) * 2009-07-23 2011-04-21 Venkatraman Prabhakar Systems, methods and materials involving crystallization of substrates using a seed layer, as well as products produced by such processes
EP2599110A4 (en) 2009-07-28 2014-04-23 Gigasi Solar Inc SYSTEMS, METHODS AND MATERIALS FOR CRYSTALLIZING SUBSTRATES THROUGH UNDERGLASHING GLASSES AND PRODUCTS MANUFACTURED BY SUCH METHODS
US8148237B2 (en) * 2009-08-07 2012-04-03 Varian Semiconductor Equipment Associates, Inc. Pressurized treatment of substrates to enhance cleaving process
US8629436B2 (en) * 2009-08-14 2014-01-14 Gigasi Solar, Inc. Backside only contact thin-film solar cells and devices, systems and methods of fabricating same, and products produced by processes thereof
FR2949606B1 (fr) * 2009-08-26 2011-10-28 Commissariat Energie Atomique Procede de detachement par fracture d'un film mince de silicium mettant en oeuvre une triple implantation
US20110073175A1 (en) * 2009-09-29 2011-03-31 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having emitter formed at light-facing and back surfaces
US10354995B2 (en) 2009-10-12 2019-07-16 Monolithic 3D Inc. Semiconductor memory device and structure
US11018133B2 (en) 2009-10-12 2021-05-25 Monolithic 3D Inc. 3D integrated circuit
US10388863B2 (en) 2009-10-12 2019-08-20 Monolithic 3D Inc. 3D memory device and structure
US10910364B2 (en) 2009-10-12 2021-02-02 Monolitaic 3D Inc. 3D semiconductor device
US10043781B2 (en) 2009-10-12 2018-08-07 Monolithic 3D Inc. 3D semiconductor device and structure
US8536023B2 (en) 2010-11-22 2013-09-17 Monolithic 3D Inc. Method of manufacturing a semiconductor device and structure
US8476145B2 (en) 2010-10-13 2013-07-02 Monolithic 3D Inc. Method of fabricating a semiconductor device and structure
US8148728B2 (en) 2009-10-12 2012-04-03 Monolithic 3D, Inc. Method for fabrication of a semiconductor device and structure
US11374118B2 (en) 2009-10-12 2022-06-28 Monolithic 3D Inc. Method to form a 3D integrated circuit
US8450804B2 (en) 2011-03-06 2013-05-28 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US10157909B2 (en) 2009-10-12 2018-12-18 Monolithic 3D Inc. 3D semiconductor device and structure
US9099424B1 (en) 2012-08-10 2015-08-04 Monolithic 3D Inc. Semiconductor system, device and structure with heat removal
US11984445B2 (en) 2009-10-12 2024-05-14 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
US8742476B1 (en) 2012-11-27 2014-06-03 Monolithic 3D Inc. Semiconductor device and structure
US12027518B1 (en) 2009-10-12 2024-07-02 Monolithic 3D Inc. 3D semiconductor devices and structures with metal layers
US10366970B2 (en) 2009-10-12 2019-07-30 Monolithic 3D Inc. 3D semiconductor device and structure
US8581349B1 (en) 2011-05-02 2013-11-12 Monolithic 3D Inc. 3D memory semiconductor device and structure
US8114754B2 (en) 2009-11-18 2012-02-14 S.O.I.Tec Silicon On Insulator Technologies Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods
WO2011066485A2 (en) * 2009-11-25 2011-06-03 Gigasi Solar, Inc. Systems, methods and products including features of laser irradiation and/or cleaving of silicon with other substrates or layers
US8298908B2 (en) * 2010-02-11 2012-10-30 International Business Machines Corporation Structure and method for forming isolation and buried plate for trench capacitor
US8492886B2 (en) 2010-02-16 2013-07-23 Monolithic 3D Inc 3D integrated circuit with logic
US8541819B1 (en) 2010-12-09 2013-09-24 Monolithic 3D Inc. Semiconductor device and structure
US9099526B2 (en) 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
US8298875B1 (en) 2011-03-06 2012-10-30 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8373230B1 (en) 2010-10-13 2013-02-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8026521B1 (en) 2010-10-11 2011-09-27 Monolithic 3D Inc. Semiconductor device and structure
US8461035B1 (en) 2010-09-30 2013-06-11 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8349626B2 (en) * 2010-03-23 2013-01-08 Gtat Corporation Creation of low-relief texture for a photovoltaic cell
JP2011216543A (ja) * 2010-03-31 2011-10-27 Ube Industries Ltd 発光ダイオード、それに用いられる発光ダイオード用基板及びその製造方法
JP2011228650A (ja) * 2010-03-31 2011-11-10 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法及び半導体装置の作製方法
FR2961515B1 (fr) 2010-06-22 2012-08-24 Commissariat Energie Atomique Procede de realisation d'une couche mince de silicium monocristallin sur une couche de polymere
FR2961948B1 (fr) * 2010-06-23 2012-08-03 Soitec Silicon On Insulator Procede de traitement d'une piece en materiau compose
KR101134819B1 (ko) 2010-07-02 2012-04-13 이상윤 반도체 메모리 장치의 제조 방법
US10217667B2 (en) 2011-06-28 2019-02-26 Monolithic 3D Inc. 3D semiconductor device, fabrication method and system
US8642416B2 (en) 2010-07-30 2014-02-04 Monolithic 3D Inc. Method of forming three dimensional integrated circuit devices using layer transfer technique
US8901613B2 (en) 2011-03-06 2014-12-02 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US9219005B2 (en) 2011-06-28 2015-12-22 Monolithic 3D Inc. Semiconductor system and device
US9953925B2 (en) 2011-06-28 2018-04-24 Monolithic 3D Inc. Semiconductor system and device
JP5917036B2 (ja) 2010-08-05 2016-05-11 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US8163581B1 (en) 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices
US10497713B2 (en) 2010-11-18 2019-12-03 Monolithic 3D Inc. 3D semiconductor memory device and structure
US8273610B2 (en) 2010-11-18 2012-09-25 Monolithic 3D Inc. Method of constructing a semiconductor device and structure
US11482440B2 (en) 2010-12-16 2022-10-25 Monolithic 3D Inc. 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
US12362219B2 (en) 2010-11-18 2025-07-15 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11600667B1 (en) 2010-10-11 2023-03-07 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US10896931B1 (en) 2010-10-11 2021-01-19 Monolithic 3D Inc. 3D semiconductor device and structure
US11257867B1 (en) 2010-10-11 2022-02-22 Monolithic 3D Inc. 3D semiconductor device and structure with oxide bonds
US10290682B2 (en) 2010-10-11 2019-05-14 Monolithic 3D Inc. 3D IC semiconductor device and structure with stacked memory
US11024673B1 (en) 2010-10-11 2021-06-01 Monolithic 3D Inc. 3D semiconductor device and structure
US8114757B1 (en) 2010-10-11 2012-02-14 Monolithic 3D Inc. Semiconductor device and structure
US11018191B1 (en) 2010-10-11 2021-05-25 Monolithic 3D Inc. 3D semiconductor device and structure
US11315980B1 (en) 2010-10-11 2022-04-26 Monolithic 3D Inc. 3D semiconductor device and structure with transistors
US11227897B2 (en) 2010-10-11 2022-01-18 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US11158674B2 (en) 2010-10-11 2021-10-26 Monolithic 3D Inc. Method to produce a 3D semiconductor device and structure
US11469271B2 (en) 2010-10-11 2022-10-11 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US8283215B2 (en) 2010-10-13 2012-10-09 Monolithic 3D Inc. Semiconductor and optoelectronic devices
US11869915B2 (en) 2010-10-13 2024-01-09 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11404466B2 (en) 2010-10-13 2022-08-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US10943934B2 (en) 2010-10-13 2021-03-09 Monolithic 3D Inc. Multilevel semiconductor device and structure
US9197804B1 (en) 2011-10-14 2015-11-24 Monolithic 3D Inc. Semiconductor and optoelectronic devices
US11855100B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11929372B2 (en) 2010-10-13 2024-03-12 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US12360310B2 (en) 2010-10-13 2025-07-15 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11855114B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11133344B2 (en) 2010-10-13 2021-09-28 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US10978501B1 (en) 2010-10-13 2021-04-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
US11163112B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US10679977B2 (en) 2010-10-13 2020-06-09 Monolithic 3D Inc. 3D microdisplay device and structure
US12094892B2 (en) 2010-10-13 2024-09-17 Monolithic 3D Inc. 3D micro display device and structure
US11984438B2 (en) 2010-10-13 2024-05-14 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11327227B2 (en) 2010-10-13 2022-05-10 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US11043523B1 (en) 2010-10-13 2021-06-22 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US8379458B1 (en) 2010-10-13 2013-02-19 Monolithic 3D Inc. Semiconductor device and structure
US11437368B2 (en) 2010-10-13 2022-09-06 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11164898B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure
US11063071B1 (en) 2010-10-13 2021-07-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
US12080743B2 (en) 2010-10-13 2024-09-03 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US10998374B1 (en) 2010-10-13 2021-05-04 Monolithic 3D Inc. Multilevel semiconductor device and structure
US11605663B2 (en) 2010-10-13 2023-03-14 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11694922B2 (en) 2010-10-13 2023-07-04 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US10833108B2 (en) 2010-10-13 2020-11-10 Monolithic 3D Inc. 3D microdisplay device and structure
US11094576B1 (en) 2010-11-18 2021-08-17 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11107721B2 (en) 2010-11-18 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure with NAND logic
US11482438B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US12272586B2 (en) 2010-11-18 2025-04-08 Monolithic 3D Inc. 3D semiconductor memory device and structure with memory and metal layers
US12154817B1 (en) 2010-11-18 2024-11-26 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US12144190B2 (en) 2010-11-18 2024-11-12 Monolithic 3D Inc. 3D semiconductor device and structure with bonding and memory cells preliminary class
US11804396B2 (en) 2010-11-18 2023-10-31 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11610802B2 (en) 2010-11-18 2023-03-21 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes
US11735462B2 (en) 2010-11-18 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11508605B2 (en) 2010-11-18 2022-11-22 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11482439B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors
US11854857B1 (en) 2010-11-18 2023-12-26 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11164770B1 (en) 2010-11-18 2021-11-02 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US11031275B2 (en) 2010-11-18 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US12136562B2 (en) 2010-11-18 2024-11-05 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US12125737B1 (en) 2010-11-18 2024-10-22 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US12068187B2 (en) 2010-11-18 2024-08-20 Monolithic 3D Inc. 3D semiconductor device and structure with bonding and DRAM memory cells
US12100611B2 (en) 2010-11-18 2024-09-24 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11355380B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. Methods for producing 3D semiconductor memory device and structure utilizing alignment marks
US11018042B1 (en) 2010-11-18 2021-05-25 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11784082B2 (en) 2010-11-18 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11923230B1 (en) 2010-11-18 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11521888B2 (en) 2010-11-18 2022-12-06 Monolithic 3D Inc. 3D semiconductor device and structure with high-k metal gate transistors
US11443971B2 (en) 2010-11-18 2022-09-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US12033884B2 (en) 2010-11-18 2024-07-09 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11495484B2 (en) 2010-11-18 2022-11-08 Monolithic 3D Inc. 3D semiconductor devices and structures with at least two single-crystal layers
US12243765B2 (en) 2010-11-18 2025-03-04 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US11121021B2 (en) 2010-11-18 2021-09-14 Monolithic 3D Inc. 3D semiconductor device and structure
US11355381B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11211279B2 (en) 2010-11-18 2021-12-28 Monolithic 3D Inc. Method for processing a 3D integrated circuit and structure
US11569117B2 (en) 2010-11-18 2023-01-31 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11901210B2 (en) 2010-11-18 2024-02-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11615977B2 (en) 2010-11-18 2023-03-28 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11862503B2 (en) 2010-11-18 2024-01-02 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11004719B1 (en) 2010-11-18 2021-05-11 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US12463076B2 (en) 2010-12-16 2025-11-04 Monolithic 3D Inc. 3D semiconductor device and structure
US8975670B2 (en) 2011-03-06 2015-03-10 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US10388568B2 (en) 2011-06-28 2019-08-20 Monolithic 3D Inc. 3D semiconductor device and system
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur
TWI573198B (zh) * 2011-09-27 2017-03-01 索泰克公司 在三度空間集積製程中轉移材料層之方法及其相關結構與元件
US8841742B2 (en) 2011-09-27 2014-09-23 Soitec Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods
US8673733B2 (en) * 2011-09-27 2014-03-18 Soitec Methods of transferring layers of material in 3D integration processes and related structures and devices
US8687399B2 (en) 2011-10-02 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US9029173B2 (en) 2011-10-18 2015-05-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
FR2984597B1 (fr) * 2011-12-20 2016-07-29 Commissariat Energie Atomique Fabrication d’une structure souple par transfert de couches
US9214353B2 (en) 2012-02-26 2015-12-15 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
US9000557B2 (en) 2012-03-17 2015-04-07 Zvi Or-Bach Semiconductor device and structure
US11694944B1 (en) 2012-04-09 2023-07-04 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11735501B1 (en) 2012-04-09 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11164811B2 (en) 2012-04-09 2021-11-02 Monolithic 3D Inc. 3D semiconductor device with isolation layers and oxide-to-oxide bonding
US11881443B2 (en) 2012-04-09 2024-01-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11476181B1 (en) 2012-04-09 2022-10-18 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11410912B2 (en) 2012-04-09 2022-08-09 Monolithic 3D Inc. 3D semiconductor device with vias and isolation layers
US10600888B2 (en) 2012-04-09 2020-03-24 Monolithic 3D Inc. 3D semiconductor device
US11088050B2 (en) 2012-04-09 2021-08-10 Monolithic 3D Inc. 3D semiconductor device with isolation layers
US8557632B1 (en) 2012-04-09 2013-10-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US11616004B1 (en) 2012-04-09 2023-03-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11594473B2 (en) 2012-04-09 2023-02-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US9481566B2 (en) 2012-07-31 2016-11-01 Soitec Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices
US8686428B1 (en) 2012-11-16 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US8574929B1 (en) 2012-11-16 2013-11-05 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11967583B2 (en) 2012-12-22 2024-04-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11961827B1 (en) 2012-12-22 2024-04-16 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US8674470B1 (en) 2012-12-22 2014-03-18 Monolithic 3D Inc. Semiconductor device and structure
US12051674B2 (en) 2012-12-22 2024-07-30 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11018116B2 (en) 2012-12-22 2021-05-25 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11217565B2 (en) 2012-12-22 2022-01-04 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11063024B1 (en) 2012-12-22 2021-07-13 Monlithic 3D Inc. Method to form a 3D semiconductor device and structure
US11784169B2 (en) 2012-12-22 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11916045B2 (en) 2012-12-22 2024-02-27 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11309292B2 (en) 2012-12-22 2022-04-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US9281233B2 (en) * 2012-12-28 2016-03-08 Sunedison Semiconductor Limited Method for low temperature layer transfer in the preparation of multilayer semiconductor devices
US9385058B1 (en) 2012-12-29 2016-07-05 Monolithic 3D Inc. Semiconductor device and structure
US10892169B2 (en) 2012-12-29 2021-01-12 Monolithic 3D Inc. 3D semiconductor device and structure
US12249538B2 (en) 2012-12-29 2025-03-11 Monolithic 3D Inc. 3D semiconductor device and structure including power distribution grids
US11430667B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US10600657B2 (en) 2012-12-29 2020-03-24 Monolithic 3D Inc 3D semiconductor device and structure
US10903089B1 (en) 2012-12-29 2021-01-26 Monolithic 3D Inc. 3D semiconductor device and structure
US11004694B1 (en) 2012-12-29 2021-05-11 Monolithic 3D Inc. 3D semiconductor device and structure
US10115663B2 (en) 2012-12-29 2018-10-30 Monolithic 3D Inc. 3D semiconductor device and structure
US11430668B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11087995B1 (en) 2012-12-29 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US11177140B2 (en) 2012-12-29 2021-11-16 Monolithic 3D Inc. 3D semiconductor device and structure
US10651054B2 (en) 2012-12-29 2020-05-12 Monolithic 3D Inc. 3D semiconductor device and structure
US9871034B1 (en) 2012-12-29 2018-01-16 Monolithic 3D Inc. Semiconductor device and structure
US11869965B2 (en) 2013-03-11 2024-01-09 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US12094965B2 (en) 2013-03-11 2024-09-17 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US8902663B1 (en) 2013-03-11 2014-12-02 Monolithic 3D Inc. Method of maintaining a memory state
US10325651B2 (en) 2013-03-11 2019-06-18 Monolithic 3D Inc. 3D semiconductor device with stacked memory
US11935949B1 (en) 2013-03-11 2024-03-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US10840239B2 (en) 2014-08-26 2020-11-17 Monolithic 3D Inc. 3D semiconductor device and structure
US11923374B2 (en) 2013-03-12 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11398569B2 (en) 2013-03-12 2022-07-26 Monolithic 3D Inc. 3D semiconductor device and structure
US12100646B2 (en) 2013-03-12 2024-09-24 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11088130B2 (en) 2014-01-28 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US8994404B1 (en) 2013-03-12 2015-03-31 Monolithic 3D Inc. Semiconductor device and structure
US10224279B2 (en) 2013-03-15 2019-03-05 Monolithic 3D Inc. Semiconductor device and structure
US9117749B1 (en) 2013-03-15 2015-08-25 Monolithic 3D Inc. Semiconductor device and structure
US11487928B2 (en) 2013-04-15 2022-11-01 Monolithic 3D Inc. Automation for monolithic 3D devices
US11030371B2 (en) 2013-04-15 2021-06-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US11270055B1 (en) 2013-04-15 2022-03-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US9021414B1 (en) 2013-04-15 2015-04-28 Monolithic 3D Inc. Automation for monolithic 3D devices
US11341309B1 (en) 2013-04-15 2022-05-24 Monolithic 3D Inc. Automation for monolithic 3D devices
US11574109B1 (en) 2013-04-15 2023-02-07 Monolithic 3D Inc Automation methods for 3D integrated circuits and devices
US11720736B2 (en) 2013-04-15 2023-08-08 Monolithic 3D Inc. Automation methods for 3D integrated circuits and devices
US9627287B2 (en) * 2013-10-18 2017-04-18 Infineon Technologies Ag Thinning in package using separation structure as stop
WO2015069452A1 (en) * 2013-11-05 2015-05-14 Applied Materials, Inc. Methods and apparatus for thin-film substrate formation
JP6131179B2 (ja) * 2013-12-06 2017-05-17 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
US12094829B2 (en) 2014-01-28 2024-09-17 Monolithic 3D Inc. 3D semiconductor device and structure
US10297586B2 (en) 2015-03-09 2019-05-21 Monolithic 3D Inc. Methods for processing a 3D semiconductor device
US11031394B1 (en) 2014-01-28 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure
US11107808B1 (en) 2014-01-28 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure
US10068795B2 (en) 2014-02-07 2018-09-04 Globalwafers Co., Ltd. Methods for preparing layered semiconductor structures
US10381328B2 (en) 2015-04-19 2019-08-13 Monolithic 3D Inc. Semiconductor device and structure
US12219769B2 (en) 2015-10-24 2025-02-04 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US11937422B2 (en) 2015-11-07 2024-03-19 Monolithic 3D Inc. Semiconductor memory device and structure
US10825779B2 (en) 2015-04-19 2020-11-03 Monolithic 3D Inc. 3D semiconductor device and structure
US10847540B2 (en) 2015-10-24 2020-11-24 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11978731B2 (en) 2015-09-21 2024-05-07 Monolithic 3D Inc. Method to produce a multi-level semiconductor memory device and structure
US11056468B1 (en) 2015-04-19 2021-07-06 Monolithic 3D Inc. 3D semiconductor device and structure
US12035531B2 (en) 2015-10-24 2024-07-09 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US11011507B1 (en) 2015-04-19 2021-05-18 Monolithic 3D Inc. 3D semiconductor device and structure
US12016181B2 (en) 2015-10-24 2024-06-18 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US11114464B2 (en) 2015-10-24 2021-09-07 Monolithic 3D Inc. 3D semiconductor device and structure
US11296115B1 (en) 2015-10-24 2022-04-05 Monolithic 3D Inc. 3D semiconductor device and structure
US12615784B2 (en) 2015-11-07 2026-04-28 Monolithic 3D Inc. 3D semiconductor memory device and structure
US12477752B2 (en) 2015-09-21 2025-11-18 Monolithic 3D Inc. 3D semiconductor memory devices and structures
US10418369B2 (en) 2015-10-24 2019-09-17 Monolithic 3D Inc. Multi-level semiconductor memory device and structure
US11114427B2 (en) 2015-11-07 2021-09-07 Monolithic 3D Inc. 3D semiconductor processor and memory device and structure
US11956952B2 (en) 2015-08-23 2024-04-09 Monolithic 3D Inc. Semiconductor memory device and structure
CN106548972B (zh) * 2015-09-18 2019-02-26 胡兵 一种将半导体衬底主体与其上功能层进行分离的方法
US12100658B2 (en) 2015-09-21 2024-09-24 Monolithic 3D Inc. Method to produce a 3D multilayer semiconductor device and structure
US12178055B2 (en) 2015-09-21 2024-12-24 Monolithic 3D Inc. 3D semiconductor memory devices and structures
US12250830B2 (en) 2015-09-21 2025-03-11 Monolithic 3D Inc. 3D semiconductor memory devices and structures
DE112016004265T5 (de) 2015-09-21 2018-06-07 Monolithic 3D Inc. 3d halbleitervorrichtung und -struktur
US10522225B1 (en) 2015-10-02 2019-12-31 Monolithic 3D Inc. Semiconductor device with non-volatile memory
US11991884B1 (en) 2015-10-24 2024-05-21 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
US12120880B1 (en) 2015-10-24 2024-10-15 Monolithic 3D Inc. 3D semiconductor device and structure with logic and memory
FR3051971B1 (fr) * 2016-05-30 2019-12-13 Soitec Procede de fabrication d'une structure semi-conductrice comprenant un interposeur
US12225704B2 (en) 2016-10-10 2025-02-11 Monolithic 3D Inc. 3D memory devices and structures with memory arrays and metal layers
US11251149B2 (en) 2016-10-10 2022-02-15 Monolithic 3D Inc. 3D memory device and structure
US11869591B2 (en) 2016-10-10 2024-01-09 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US11812620B2 (en) 2016-10-10 2023-11-07 Monolithic 3D Inc. 3D DRAM memory devices and structures with control circuits
US11329059B1 (en) 2016-10-10 2022-05-10 Monolithic 3D Inc. 3D memory devices and structures with thinned single crystal substrates
US11711928B2 (en) 2016-10-10 2023-07-25 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US11930648B1 (en) 2016-10-10 2024-03-12 Monolithic 3D Inc. 3D memory devices and structures with metal layers
FR3074960B1 (fr) 2017-12-07 2019-12-06 Soitec Procede de transfert d'une couche utilisant une structure demontable
US20200194555A1 (en) 2018-12-18 2020-06-18 United Microelectronics Corp. Semiconductor device with reduced floating body effects and fabrication method thereof
US11296106B2 (en) 2019-04-08 2022-04-05 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11763864B2 (en) 2019-04-08 2023-09-19 Monolithic 3D Inc. 3D memory semiconductor devices and structures with bit-line pillars
US11018156B2 (en) 2019-04-08 2021-05-25 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11158652B1 (en) 2019-04-08 2021-10-26 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US10892016B1 (en) 2019-04-08 2021-01-12 Monolithic 3D Inc. 3D memory semiconductor devices and structures
KR102271268B1 (ko) 2019-09-20 2021-06-30 재단법인대구경북과학기술원 전자장치 제조방법
FR3108439B1 (fr) 2020-03-23 2022-02-11 Soitec Silicon On Insulator Procede de fabrication d’une structure empilee
FR3109016B1 (fr) 2020-04-01 2023-12-01 Soitec Silicon On Insulator Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable
WO2025226300A1 (en) * 2024-04-23 2025-10-30 Microchip Technology Incorporated Method including an ion beam implant and stressed film for separating a substrate film region from a bulk substrate region

Family Cites Families (129)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3915757A (en) * 1972-08-09 1975-10-28 Niels N Engel Ion plating method and product therefrom
US3913520A (en) * 1972-08-14 1975-10-21 Precision Thin Film Corp High vacuum deposition apparatus
US3993909A (en) * 1973-03-16 1976-11-23 U.S. Philips Corporation Substrate holder for etching thin films
FR2245779B1 (ko) * 1973-09-28 1978-02-10 Cit Alcatel
US3901423A (en) * 1973-11-26 1975-08-26 Purdue Research Foundation Method for fracturing crystalline materials
US4170662A (en) * 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
US4121334A (en) 1974-12-17 1978-10-24 P. R. Mallory & Co. Inc. Application of field-assisted bonding to the mass production of silicon type pressure transducers
US3957107A (en) * 1975-02-27 1976-05-18 The United States Of America As Represented By The Secretary Of The Air Force Thermal switch
US4039416A (en) * 1975-04-21 1977-08-02 White Gerald W Gasless ion plating
GB1542299A (en) 1976-03-23 1979-03-14 Warner Lambert Co Blade shields
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4074139A (en) 1976-12-27 1978-02-14 Rca Corporation Apparatus and method for maskless ion implantation
JPS53104156A (en) 1977-02-23 1978-09-11 Hitachi Ltd Manufacture for semiconductor device
US4108751A (en) * 1977-06-06 1978-08-22 King William J Ion beam implantation-sputtering
US4179324A (en) 1977-11-28 1979-12-18 Spire Corporation Process for fabricating thin film and glass sheet laminate
DE2849184A1 (de) 1978-11-13 1980-05-22 Bbc Brown Boveri & Cie Verfahren zur herstellung eines scheibenfoermigen silizium-halbleiterbauelementes mit negativer anschraegung
JPS55104057A (en) 1979-02-02 1980-08-09 Hitachi Ltd Ion implantation device
CH640886A5 (de) * 1979-08-02 1984-01-31 Balzers Hochvakuum Verfahren zum aufbringen harter verschleissfester ueberzuege auf unterlagen.
US4244348A (en) * 1979-09-10 1981-01-13 Atlantic Richfield Company Process for cleaving crystalline materials
FR2475068B1 (fr) 1980-02-01 1986-05-16 Commissariat Energie Atomique Procede de dopage de semi-conducteurs
FR2506344B2 (fr) * 1980-02-01 1986-07-11 Commissariat Energie Atomique Procede de dopage de semi-conducteurs
US4342631A (en) 1980-06-16 1982-08-03 Illinois Tool Works Inc. Gasless ion plating process and apparatus
US4471003A (en) 1980-11-25 1984-09-11 Cann Gordon L Magnetoplasmadynamic apparatus and process for the separation and deposition of materials
FR2501727A1 (fr) * 1981-03-13 1982-09-17 Vide Traitement Procede de traitements thermochimiques de metaux par bombardement ionique
US4361600A (en) * 1981-11-12 1982-11-30 General Electric Company Method of making integrated circuits
US4412868A (en) 1981-12-23 1983-11-01 General Electric Company Method of making integrated circuits utilizing ion implantation and selective epitaxial growth
US4486247A (en) 1982-06-21 1984-12-04 Westinghouse Electric Corp. Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof
FR2529383A1 (fr) * 1982-06-24 1983-12-30 Commissariat Energie Atomique Porte-cible a balayage mecanique utilisable notamment pour l'implantation d'ioris
JPS5954217A (ja) 1982-09-21 1984-03-29 Nec Corp 半導体基板の製造方法
FR2537768A1 (fr) * 1982-12-08 1984-06-15 Commissariat Energie Atomique Procede et dispositif d'obtention de faisceaux de particules de densite spatialement modulee, application a la gravure et a l'implantation ioniques
FR2537777A1 (fr) * 1982-12-10 1984-06-15 Commissariat Energie Atomique Procede et dispositif d'implantation de particules dans un solide
DE3246480A1 (de) 1982-12-15 1984-06-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von halbleiterscheiben mit getternder scheibenrueckseite
US4500563A (en) * 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
US4468309A (en) * 1983-04-22 1984-08-28 White Engineering Corporation Method for resisting galling
GB2144343A (en) * 1983-08-02 1985-03-06 Standard Telephones Cables Ltd Optical fibre manufacture
US4567505A (en) 1983-10-27 1986-01-28 The Board Of Trustees Of The Leland Stanford Junior University Heat sink and method of attaching heat sink to a semiconductor integrated circuit and the like
JPS6088535U (ja) * 1983-11-24 1985-06-18 住友電気工業株式会社 半導体ウエハ
SU1282757A1 (ru) 1983-12-30 2000-06-27 Институт Ядерной Физики Ан Казсср Способ изготовления тонких пластин кремния
FR2558263B1 (fr) 1984-01-12 1986-04-25 Commissariat Energie Atomique Accelerometre directif et son procede de fabrication par microlithographie
GB2155024A (en) 1984-03-03 1985-09-18 Standard Telephones Cables Ltd Surface treatment of plastics materials
FR2563377B1 (fr) 1984-04-19 1987-01-23 Commissariat Energie Atomique Procede de fabrication d'une couche isolante enterree dans un substrat semi-conducteur, par implantation ionique
US4542863A (en) * 1984-07-23 1985-09-24 Larson Edwin L Pipe-thread sealing tape reel with tape retarding element
US4566403A (en) * 1985-01-30 1986-01-28 Sovonics Solar Systems Apparatus for microwave glow discharge deposition
US4837172A (en) 1986-07-18 1989-06-06 Matsushita Electric Industrial Co., Ltd. Method for removing impurities existing in semiconductor substrate
US4717683A (en) 1986-09-23 1988-01-05 Motorola Inc. CMOS process
US4764394A (en) 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
JPS63254762A (ja) 1987-04-13 1988-10-21 Nissan Motor Co Ltd Ｃｍｏｓ半導体装置
US4847792A (en) 1987-05-04 1989-07-11 Texas Instruments Incorporated Process and apparatus for detecting aberrations in production process operations
SE458398B (sv) 1987-05-27 1989-03-20 H Biverot Ljusdetekterande och ljusriktningsbestaemmande anordning
FR2616590B1 (fr) 1987-06-15 1990-03-02 Commissariat Energie Atomique Procede de fabrication d'une couche d'isolant enterree dans un substrat semi-conducteur par implantation ionique et structure semi-conductrice comportant cette couche
US4956698A (en) 1987-07-29 1990-09-11 The United States Of America As Represented By The Department Of Commerce Group III-V compound semiconductor device having p-region formed by Be and Group V ions
US4846928A (en) 1987-08-04 1989-07-11 Texas Instruments, Incorporated Process and apparatus for detecting aberrations in production process operations
US4887005A (en) 1987-09-15 1989-12-12 Rough J Kirkwood H Multiple electrode plasma reactor power distribution system
US5015353A (en) 1987-09-30 1991-05-14 The United States Of America As Represented By The Secretary Of The Navy Method for producing substoichiometric silicon nitride of preselected proportions
US5138422A (en) 1987-10-27 1992-08-11 Nippondenso Co., Ltd. Semiconductor device which includes multiple isolated semiconductor segments on one chip
GB8725497D0 (en) 1987-10-30 1987-12-02 Atomic Energy Authority Uk Isolation of silicon
US5200805A (en) 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same
US4904610A (en) 1988-01-27 1990-02-27 General Instrument Corporation Wafer level process for fabricating passivated semiconductor devices
DE3803424C2 (de) 1988-02-05 1995-05-18 Gsf Forschungszentrum Umwelt Verfahren zur quantitativen, tiefendifferentiellen Analyse fester Proben
JP2666945B2 (ja) 1988-02-08 1997-10-22 株式会社東芝 半導体装置の製造方法
US4894709A (en) 1988-03-09 1990-01-16 Massachusetts Institute Of Technology Forced-convection, liquid-cooled, microchannel heat sinks
US4853250A (en) 1988-05-11 1989-08-01 Universite De Sherbrooke Process of depositing particulate material on a substrate
NL8802028A (nl) 1988-08-16 1990-03-16 Philips Nv Werkwijze voor het vervaardigen van een inrichting.
JP2670623B2 (ja) 1988-09-19 1997-10-29 アネルバ株式会社 マイクロ波プラズマ処理装置
US4952273A (en) 1988-09-21 1990-08-28 Microscience, Inc. Plasma generation in electron cyclotron resonance
US4996077A (en) 1988-10-07 1991-02-26 Texas Instruments Incorporated Distributed ECR remote plasma processing and apparatus
US4891329A (en) 1988-11-29 1990-01-02 University Of North Carolina Method of forming a nonsilicon semiconductor on insulator structure
JPH02302044A (ja) 1989-05-16 1990-12-14 Fujitsu Ltd 半導体装置の製造方法
US4929566A (en) 1989-07-06 1990-05-29 Harris Corporation Method of making dielectrically isolated integrated circuits using oxygen implantation and expitaxial growth
JPH0355822A (ja) 1989-07-25 1991-03-11 Shin Etsu Handotai Co Ltd 半導体素子形成用基板の製造方法
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5036023A (en) 1989-08-16 1991-07-30 At&T Bell Laboratories Rapid thermal processing method of making a semiconductor device
US5013681A (en) 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
US5310446A (en) 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
JPH0650738B2 (ja) 1990-01-11 1994-06-29 株式会社東芝 半導体装置及びその製造方法
US5034343A (en) 1990-03-08 1991-07-23 Harris Corporation Manufacturing ultra-thin wafer using a handle wafer
CN1018844B (zh) 1990-06-02 1992-10-28 中国科学院兰州化学物理研究所 防锈干膜润滑剂
JPH0719739B2 (ja) 1990-09-10 1995-03-06 信越半導体株式会社 接合ウェーハの製造方法
US5198371A (en) 1990-09-24 1993-03-30 Biota Corp. Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
US5618739A (en) * 1990-11-15 1997-04-08 Seiko Instruments Inc. Method of making light valve device using semiconductive composite substrate
US5300788A (en) 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
JP2526317B2 (ja) 1991-01-25 1996-08-21 日本電子ロック株式会社 磁石カ―ド錠
DE4106288C2 (de) 1991-02-28 2001-05-31 Bosch Gmbh Robert Sensor zur Messung von Drücken oder Beschleunigungen
JP2812405B2 (ja) 1991-03-15 1998-10-22 信越半導体株式会社 半導体基板の製造方法
US5110748A (en) 1991-03-28 1992-05-05 Honeywell Inc. Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display
US5442205A (en) 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers
US5256581A (en) 1991-08-28 1993-10-26 Motorola, Inc. Silicon film with improved thickness control
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3416163B2 (ja) 1992-01-31 2003-06-16 キヤノン株式会社 半導体基板及びその作製方法
JP3250673B2 (ja) * 1992-01-31 2002-01-28 キヤノン株式会社 半導体素子基体とその作製方法
JPH05235312A (ja) * 1992-02-19 1993-09-10 Fujitsu Ltd 半導体基板及びその製造方法
US5234535A (en) * 1992-12-10 1993-08-10 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer
US5400458A (en) 1993-03-31 1995-03-28 Minnesota Mining And Manufacturing Company Brush segment for industrial brushes
FR2714524B1 (fr) 1993-12-23 1996-01-26 Commissariat Energie Atomique Procede de realisation d'une structure en relief sur un support en materiau semiconducteur
FR2715502B1 (fr) 1994-01-26 1996-04-05 Commissariat Energie Atomique Structure présentant des cavités et procédé de réalisation d'une telle structure.
FR2715501B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Procédé de dépôt de lames semiconductrices sur un support.
FR2715503B1 (fr) 1994-01-26 1996-04-05 Commissariat Energie Atomique Substrat pour composants intégrés comportant une couche mince et son procédé de réalisation.
JP3293736B2 (ja) * 1996-02-28 2002-06-17 キヤノン株式会社 半導体基板の作製方法および貼り合わせ基体
JPH0851103A (ja) * 1994-08-08 1996-02-20 Fuji Electric Co Ltd 薄膜の生成方法
US5524339A (en) * 1994-09-19 1996-06-11 Martin Marietta Corporation Method for protecting gallium arsenide mmic air bridge structures
FR2725074B1 (fr) * 1994-09-22 1996-12-20 Commissariat Energie Atomique Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
US5567654A (en) * 1994-09-28 1996-10-22 International Business Machines Corporation Method and workpiece for connecting a thin layer to a monolithic electronic module's surface and associated module packaging
JP3743519B2 (ja) * 1994-10-18 2006-02-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ シリコン−酸化物薄層の製造方法
EP0717437B1 (en) * 1994-12-12 2002-04-24 Advanced Micro Devices, Inc. Method of forming buried oxide layers
FR2738671B1 (fr) * 1995-09-13 1997-10-10 Commissariat Energie Atomique Procede de fabrication de films minces a materiau semiconducteur
FR2744285B1 (fr) * 1996-01-25 1998-03-06 Commissariat Energie Atomique Procede de transfert d'une couche mince d'un substrat initial sur un substrat final
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US5863832A (en) * 1996-06-28 1999-01-26 Intel Corporation Capping layer in interconnect system and method for bonding the capping layer onto the interconnect system
US5897331A (en) * 1996-11-08 1999-04-27 Midwest Research Institute High efficiency low cost thin film silicon solar cell design and method for making
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2823596B1 (fr) 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
FR2830983B1 (fr) 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
KR100511656B1 (ko) * 2002-08-10 2005-09-07 주식회사 실트론 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼
FR2847075B1 (fr) 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2850487B1 (fr) 2002-12-24 2005-12-09 Commissariat Energie Atomique Procede de realisation de substrats mixtes et structure ainsi obtenue
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FR2899378B1 (fr) 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2922359B1 (fr) 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100742790B1 (ko) * 2000-04-14 2007-07-25 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 특히 반도체 재료(들)로 제조된 기판 또는 잉곳에서 적어도 하나의 박층을 절단하는 방법 및 장치

Also Published As

Publication number Publication date
DE69738608T2 (de) 2009-04-30
US20040166651A1 (en) 2004-08-26
US20090130392A1 (en) 2009-05-21
US6225192B1 (en) 2001-05-01
EP1768176A3 (fr) 2007-04-04
US6809009B2 (en) 2004-10-26
JP2004048038A (ja) 2004-02-12
KR100704107B1 (ko) 2007-07-06
EP0807970B1 (fr) 2008-04-02
MY125679A (en) 2006-08-30
SG52966A1 (en) 1998-09-28
US6020252A (en) 2000-02-01
JP3517080B2 (ja) 2004-04-05
FR2748851A1 (fr) 1997-11-21
EP1768176A2 (fr) 2007-03-28
US7498234B2 (en) 2009-03-03
JPH1050628A (ja) 1998-02-20
FR2748851B1 (fr) 1998-08-07
US20060115961A1 (en) 2006-06-01
EP0807970A1 (fr) 1997-11-19
JP4220332B2 (ja) 2009-02-04
US7067396B2 (en) 2006-06-27
US8101503B2 (en) 2012-01-24
US20120133028A1 (en) 2012-05-31
US20010007789A1 (en) 2001-07-12
DE69738608D1 (de) 2008-05-15
TW366527B (en) 1999-08-11

Similar Documents

Publication Publication Date Title
KR970077700A (ko) 박층의 반도체 재료를 제조하는 방법
JP4425631B2 (ja) 超小型構成部品を含む薄膜層を製造するための方法
US7745277B2 (en) MOSFET performance improvement using deformation in SOI structure
JP4049834B2 (ja) 半導体材料薄膜の製造方法
US20100167499A1 (en) Method for making a stressed structure designed to be dissociated
KR970072460A (ko) 전자 부품들을 포함하는, 반도체 재료로 된 박막을 얻는 방법
JP2001512906A (ja) 固体材料からなる薄膜の作製方法
US6291326B1 (en) Pre-semiconductor process implant and post-process film separation
JP2001503568A (ja) 基盤上に形成された薄層およびその製造方法
JP2004503111A (ja) 材料ブロックを切り取るための方法ならびに薄膜の形成方法
JP2007251172A (ja) 薄膜を製造する方法
JP2003506892A (ja) 過度の脆弱化ステップを有した薄層の移送方法
US7264996B2 (en) Method for separating wafers bonded together to form a stacked structure
JP2000196116A5 (ko)
WO2018149906A1 (en) Masking a zone at the edge of a donor substrate during an ion implantation step
KR20060109342A (ko) 반도체 웨이퍼의 처리방법
JPH11191557A (ja) Ｓｏｉ基板の製造方法
EP1051747A1 (de) Verfahren zur herstellung integrierter schaltkreise
US7504314B2 (en) Method for fabricating oxygen-implanted silicon on insulation type semiconductor and semiconductor formed therefrom
JP2006501072A (ja) 単結晶基板から微細構造物を形成する方法
KR970017986A (ko) 선택적 soi구조를 갖는 웨이퍼의 제작 방법
CN120642026A (zh) 在半导体基板中形成弱化区的方法
KR950006979A (ko) 반도체 소자를 제조하기 위한 이온 주입방법
KR970063477A (ko) 마스크를 이용한 고에너지 이온주입방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20041112

Effective date: 20060329

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20060329

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 1997 18788

Appeal request date: 20041112

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2004101005299

PS0901 Examination by remand of revocation

St.27 status event code: A-6-3-E10-E12-rex-PS0901

S901 Examination by remand of revocation
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

St.27 status event code: A-3-4-F10-F13-rex-PS0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130304

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140318

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150309

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20170516

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000