MD4266B1 - Procedeu de obtinere a monocristalului de ZnSe - Google Patents

Procedeu de obtinere a monocristalului de ZnSe Download PDF

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Publication number
MD4266B1
MD4266B1 MDA20110026A MD20110026A MD4266B1 MD 4266 B1 MD4266 B1 MD 4266B1 MD A20110026 A MDA20110026 A MD A20110026A MD 20110026 A MD20110026 A MD 20110026A MD 4266 B1 MD4266 B1 MD 4266B1
Authority
MD
Moldova
Prior art keywords
single crystal
producing
znse single
temperature
znse
Prior art date
Application number
MDA20110026A
Other languages
English (en)
Moldavian (mo)
Other versions
MD4266C1 (ro
MD20110026A2 (ro
Inventor
Gleb Colibaba
Dumitru Nedeoglo
Original Assignee
Univ De Stat Din Moldova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ De Stat Din Moldova filed Critical Univ De Stat Din Moldova
Priority to MDA20110026A priority Critical patent/MD4266C1/ro
Publication of MD20110026A2 publication Critical patent/MD20110026A2/ro
Publication of MD4266B1 publication Critical patent/MD4266B1/ro
Publication of MD4266C1 publication Critical patent/MD4266C1/ro

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Abstract

Inventia se refera la procedee de obtinere a materialelor semiconductoare si poate fi utilizata în tehnologia semiconductoare.Procedeul de obtinere a monocristalului de ZnSe consta în cresterea monocristalului de ZnSe din faza gazoasa la o temperatura de 900...1100°C, cu un gradient de temperatura în regiunea de cristalizare de 1...5°C/cm si cu o viteza de încalzire a germenului si de racire a cristalului crescut de 20...60°C/ora, totodata se prestabileste o distribuire neuniforma a temperaturii cuptorului.
MDA20110026A 2011-03-17 2011-03-17 Procedeu de obţinere a monocristalului de ZnSe MD4266C1 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20110026A MD4266C1 (ro) 2011-03-17 2011-03-17 Procedeu de obţinere a monocristalului de ZnSe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20110026A MD4266C1 (ro) 2011-03-17 2011-03-17 Procedeu de obţinere a monocristalului de ZnSe

Publications (3)

Publication Number Publication Date
MD20110026A2 MD20110026A2 (ro) 2012-09-30
MD4266B1 true MD4266B1 (ro) 2013-12-31
MD4266C1 MD4266C1 (ro) 2014-07-31

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ID=47018644

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20110026A MD4266C1 (ro) 2011-03-17 2011-03-17 Procedeu de obţinere a monocristalului de ZnSe

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MD (1) MD4266C1 (ro)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4500C1 (ro) * 2015-07-23 2018-02-28 Государственный Университет Молд0 Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6011293A (ja) * 1983-06-29 1985-01-21 Sumitomo Electric Ind Ltd ＺｎＳｅ単結晶の製造方法
JPH0617280B2 (ja) * 1987-03-18 1994-03-09 社団法人生産技術振興協会 ＺｎＳｅ単結晶作製法
JP2585629B2 (ja) * 1987-09-30 1997-02-26 住友電気工業株式会社 ＺｎＳｅ単結晶作製法
US4978577A (en) * 1989-04-12 1990-12-18 Cvd Incorporated Method for preparing laminates of ZnSe and ZnS
JP3410299B2 (ja) * 1996-08-08 2003-05-26 科学技術振興事業団 高濃度にドーピングしたＺｎＳｅ結晶の製造方法
JP3439302B2 (ja) * 1996-08-12 2003-08-25 住友電気工業株式会社 ＺｎＳｅ結晶の熱処理方法
JP2001332506A (ja) * 2000-05-19 2001-11-30 Sumitomo Electric Ind Ltd ＺｎＳｅ結晶基板の熱処理方法、熱処理基板及び発光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4500C1 (ro) * 2015-07-23 2018-02-28 Государственный Университет Молд0 Procedeu de obţinere a monocristalelor de ZnO din faza gazoasă

Also Published As

Publication number Publication date
MD4266C1 (ro) 2014-07-31
MD20110026A2 (ro) 2012-09-30

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FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees