NL193765C - Werkwijze voor de vervaardiging van gestapelde sleufcondensatoren voor DRAM's. - Google Patents
Werkwijze voor de vervaardiging van gestapelde sleufcondensatoren voor DRAM's. Download PDFInfo
- Publication number
- NL193765C NL193765C NL9001849A NL9001849A NL193765C NL 193765 C NL193765 C NL 193765C NL 9001849 A NL9001849 A NL 9001849A NL 9001849 A NL9001849 A NL 9001849A NL 193765 C NL193765 C NL 193765C
- Authority
- NL
- Netherlands
- Prior art keywords
- slot
- silicon layer
- deposited
- silicon
- capacitor
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 14
- 239000003990 capacitor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 238000005468 ion implantation Methods 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 230000002349 favourable effect Effects 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000001259 photo etching Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR890012019 | 1989-08-23 | ||
| KR1019890012019A KR930006973B1 (ko) | 1989-08-23 | 1989-08-23 | 디램의 스택 트렌치 커패시터 제조방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL9001849A NL9001849A (nl) | 1991-03-18 |
| NL193765B NL193765B (nl) | 2000-05-01 |
| NL193765C true NL193765C (nl) | 2000-09-04 |
Family
ID=19289171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL9001849A NL193765C (nl) | 1989-08-23 | 1990-08-21 | Werkwijze voor de vervaardiging van gestapelde sleufcondensatoren voor DRAM's. |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH0724282B2 (ja) |
| KR (1) | KR930006973B1 (ja) |
| DE (1) | DE4010720C2 (ja) |
| FR (1) | FR2651368B1 (ja) |
| GB (1) | GB2235335B (ja) |
| NL (1) | NL193765C (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000058506A (ko) * | 2000-06-07 | 2000-10-05 | 이순환 | 열기관 압축링에 삽입하여 열효율을 높이는 황동핀 |
| GB201617276D0 (en) | 2016-10-11 | 2016-11-23 | Big Solar Limited | Energy storage |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62120070A (ja) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | 半導体記憶装置 |
| JPH01101664A (ja) * | 1987-10-15 | 1989-04-19 | Nec Corp | 半導体集積回路装置 |
| JPH01179450A (ja) * | 1988-01-08 | 1989-07-17 | Oki Electric Ind Co Ltd | Ｍｏｓ型ダイナミックメモリ集積回路とその製造方法 |
| KR900019227A (ko) * | 1988-05-18 | 1990-12-24 | 아오이 죠이치 | 적층형 캐피시터를 갖춘 반도체기억장치 및 그 제조방법 |
| JPH02177359A (ja) * | 1988-12-27 | 1990-07-10 | Nec Corp | 半導体記憶装置 |
| JP4093614B2 (ja) * | 1997-06-11 | 2008-06-04 | 旭化成ケミカルズ株式会社 | 固着剤組成物 |
| JPH1179450A (ja) * | 1997-09-12 | 1999-03-23 | Mita Ind Co Ltd | 自動原稿搬送装置の原稿分離機構 |
-
1989
- 1989-08-23 KR KR1019890012019A patent/KR930006973B1/ko not_active Expired - Fee Related
-
1990
- 1990-04-03 DE DE4010720A patent/DE4010720C2/de not_active Expired - Fee Related
- 1990-04-27 JP JP2110678A patent/JPH0724282B2/ja not_active Expired - Fee Related
- 1990-05-30 FR FR909006733A patent/FR2651368B1/fr not_active Expired - Lifetime
- 1990-08-03 GB GB9017025A patent/GB2235335B/en not_active Expired - Fee Related
- 1990-08-21 NL NL9001849A patent/NL193765C/nl not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB9017025D0 (en) | 1990-09-19 |
| FR2651368B1 (fr) | 1991-11-29 |
| NL9001849A (nl) | 1991-03-18 |
| KR910005297A (ko) | 1991-03-30 |
| FR2651368A1 (fr) | 1991-03-01 |
| NL193765B (nl) | 2000-05-01 |
| KR930006973B1 (ko) | 1993-07-24 |
| GB2235335A (en) | 1991-02-27 |
| GB2235335B (en) | 1994-03-02 |
| JPH0385757A (ja) | 1991-04-10 |
| JPH0724282B2 (ja) | 1995-03-15 |
| DE4010720A1 (de) | 1991-02-28 |
| DE4010720C2 (de) | 1994-05-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20070301 |