NL8415005A - Infrarood-detector. - Google Patents
Infrarood-detector. Download PDFInfo
- Publication number
- NL8415005A NL8415005A NL8415005A NL8415005A NL8415005A NL 8415005 A NL8415005 A NL 8415005A NL 8415005 A NL8415005 A NL 8415005A NL 8415005 A NL8415005 A NL 8415005A NL 8415005 A NL8415005 A NL 8415005A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- mercury telluride
- substrate
- cadmium mercury
- cadmium
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
- H10P50/646—Chemical etching of Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/70—Chemical treatments
Landscapes
- Light Receiving Elements (AREA)
- Weting (AREA)
- Glass Compositions (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8324512 | 1983-09-13 | ||
| GB8324512 | 1983-09-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8415005A true NL8415005A (nl) | 1986-07-01 |
Family
ID=10548717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8415005A NL8415005A (nl) | 1983-09-13 | 1984-09-13 | Infrarood-detector. |
Country Status (8)
| Country | Link |
|---|---|
| DE (1) | DE3447954A1 (it) |
| DK (1) | DK436984A (it) |
| FR (1) | FR2571896B1 (it) |
| GB (1) | GB2165089B (it) |
| IT (1) | IT8567524A0 (it) |
| NL (1) | NL8415005A (it) |
| NO (1) | NO843614L (it) |
| SE (1) | SE8504828D0 (it) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2137259C1 (ru) * | 1997-10-21 | 1999-09-10 | Государственный научный центр Российской Федерации Государственное предприятие Научно-производственное объединение "Орион" | Способ изготовления многоэлементного фотоприемника |
| FR2833757B1 (fr) * | 2001-12-13 | 2004-11-05 | Commissariat Energie Atomique | Dispositif d'emission de lumiere et procede de fabrication d'un tel dispositif |
| CN115197705B (zh) * | 2022-05-30 | 2023-08-15 | 北京智创芯源科技有限公司 | 一种蚀刻液、一种碲镉汞红外焦平面混成芯片的减薄方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6910274A (it) * | 1969-07-04 | 1971-01-06 | ||
| US4037311A (en) * | 1976-07-14 | 1977-07-26 | U.S. Philips Corporation | Methods of manufacturing infra-red detector elements |
| GB2027986B (en) * | 1978-07-31 | 1983-01-19 | Philips Electronic Associated | Infra-red detectors |
| GB2027556B (en) * | 1978-07-31 | 1983-01-19 | Philips Electronic Associated | Manufacturing infra-red detectors |
-
1984
- 1984-09-12 NO NO843614A patent/NO843614L/no unknown
- 1984-09-13 GB GB08423175A patent/GB2165089B/en not_active Expired
- 1984-09-13 DE DE19843447954 patent/DE3447954A1/de not_active Withdrawn
- 1984-09-13 DK DK436984A patent/DK436984A/da not_active Application Discontinuation
- 1984-09-13 NL NL8415005A patent/NL8415005A/nl not_active Application Discontinuation
-
1985
- 1985-05-06 FR FR8507085A patent/FR2571896B1/fr not_active Expired
- 1985-06-06 IT IT8567524A patent/IT8567524A0/it unknown
- 1985-10-16 SE SE8504828A patent/SE8504828D0/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2165089B (en) | 1987-06-03 |
| SE8504828D0 (sv) | 1985-10-16 |
| IT8567524A0 (it) | 1985-06-06 |
| FR2571896B1 (fr) | 1988-07-22 |
| NO843614L (no) | 1986-06-23 |
| DK436984A (da) | 1985-07-15 |
| GB2165089A (en) | 1986-04-03 |
| FR2571896A1 (fr) | 1986-04-18 |
| DE3447954A1 (de) | 1987-01-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5340435A (en) | Bonded wafer and method of manufacturing it | |
| US5827751A (en) | Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically | |
| FR2878076A1 (fr) | Amincissement d'une plaquette semiconductrice | |
| US4301591A (en) | Method of manufacturing infra-red detector elements | |
| NL8415005A (nl) | Infrarood-detector. | |
| US4310583A (en) | Manufacture of a group of infra-red detector elements, and a group so manufactured | |
| US4137107A (en) | Method of manufacturing a semiconductor device utilizing selective masking, deposition and etching | |
| JPS63261851A (ja) | 半導体素子の製造方法 | |
| US5470761A (en) | Process for fabricating a front surface resonant mesh array detector | |
| GB2213957A (en) | Waveguide to opto-electronic transducer coupling | |
| US4126931A (en) | Method of passivating high-voltage power semiconductor devices | |
| JP2004221423A (ja) | 半導体装置の製造方法 | |
| EP0299570A1 (fr) | Procédé de réalisation de plaquettes-substrats orientées, à partir de lingots massifs semi-conducteurs du groupe III-V | |
| JPS6423580A (en) | Semiconductor photodetector device | |
| DE3447954C1 (it) | ||
| JPS60217671A (ja) | 半導体放射線検出器の製造方法 | |
| JPS58125886A (ja) | 半導体装置の製造方法 | |
| JP3390889B2 (ja) | 光学開口の製造方法 | |
| JPS61139025A (ja) | 半導体装置の製造方法 | |
| JPS58164261A (ja) | 赤外線撮像装置の製造方法 | |
| JPS6390867A (ja) | 半導体受光素子の製造方法 | |
| JPH0661545A (ja) | ホール素子の製造方法 | |
| JPH0719904B2 (ja) | 光検知素子の製造方法 | |
| KR100442619B1 (ko) | 랩핑 및 폴리싱 공정을 위한 홈을 구비하는 웨이퍼 | |
| JPH0793455B2 (ja) | アバランシェフォトダイオードの製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |