NO20010910L - Fremgangsmåte og apparat til måling av filmtykkelsen, s¶rlig en fotoresistfilm på et halvledersubstrat - Google Patents

Fremgangsmåte og apparat til måling av filmtykkelsen, s¶rlig en fotoresistfilm på et halvledersubstrat

Info

Publication number
NO20010910L
NO20010910L NO20010910A NO20010910A NO20010910L NO 20010910 L NO20010910 L NO 20010910L NO 20010910 A NO20010910 A NO 20010910A NO 20010910 A NO20010910 A NO 20010910A NO 20010910 L NO20010910 L NO 20010910L
Authority
NO
Norway
Prior art keywords
film
thickness
semiconductor substrate
measuring
film thickness
Prior art date
Application number
NO20010910A
Other languages
English (en)
Norwegian (no)
Other versions
NO20010910D0 (no
Inventor
Ofer Du-Nour
Original Assignee
Tevet Process Control Technolo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tevet Process Control Technolo filed Critical Tevet Process Control Technolo
Publication of NO20010910D0 publication Critical patent/NO20010910D0/no
Publication of NO20010910L publication Critical patent/NO20010910L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
NO20010910A 1998-08-27 2001-02-23 Fremgangsmåte og apparat til måling av filmtykkelsen, s¶rlig en fotoresistfilm på et halvledersubstrat NO20010910L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL12596498A IL125964A (en) 1998-08-27 1998-08-27 Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate
PCT/IL1999/000466 WO2000012958A1 (en) 1998-08-27 1999-08-26 Methods and apparatus for measuring the thickness of a film, particularly of a photoresist film on a semiconductor substrate

Publications (2)

Publication Number Publication Date
NO20010910D0 NO20010910D0 (no) 2001-02-23
NO20010910L true NO20010910L (no) 2001-04-27

Family

ID=11071900

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20010910A NO20010910L (no) 1998-08-27 2001-02-23 Fremgangsmåte og apparat til måling av filmtykkelsen, s¶rlig en fotoresistfilm på et halvledersubstrat

Country Status (13)

Country Link
US (1) US6801321B1 (de)
EP (1) EP1110054B1 (de)
JP (1) JP2002523763A (de)
KR (1) KR100694772B1 (de)
CN (1) CN1151358C (de)
AT (1) ATE280941T1 (de)
AU (1) AU5385599A (de)
CA (1) CA2341403A1 (de)
DE (1) DE69921493T2 (de)
HK (1) HK1039173A1 (de)
IL (1) IL125964A (de)
NO (1) NO20010910L (de)
WO (1) WO2000012958A1 (de)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL138193A0 (en) 2000-08-31 2001-10-31 Nova Measuring Instr Ltd A method and system for optical inspection of a structure formed with a surface relief
DE10045210A1 (de) * 2000-09-13 2002-05-02 Infineon Technologies Ag Verfahren und Vorrichtung zur Erfassung von auf einem Wafer aufgebrachten Schichten
US6762838B2 (en) * 2001-07-02 2004-07-13 Tevet Process Control Technologies Ltd. Method and apparatus for production line screening
IL144806A (en) 2001-08-08 2005-11-20 Nova Measuring Instr Ltd Method and apparatus for process control in semiconductor manufacturing
KR100452918B1 (ko) * 2002-04-12 2004-10-14 한국디엔에스 주식회사 두께측정시스템이 구비된 회전식각장치
JP4316853B2 (ja) * 2002-10-09 2009-08-19 株式会社トプコン 表面検査方法および装置
US6885467B2 (en) 2002-10-28 2005-04-26 Tevet Process Control Technologies Ltd. Method and apparatus for thickness decomposition of complicated layer structures
EP1467177A1 (de) * 2003-04-09 2004-10-13 Mitsubishi Chemical Engineering Corporation Verfahren und Vorrichtung zur Messung der Dicken von Schichten eines Vielschichtaufbaus
US7206076B2 (en) * 2003-11-04 2007-04-17 Lumetrics, Inc. Thickness measurement of moving webs and seal integrity system using dual interferometer
US20050211667A1 (en) * 2004-03-26 2005-09-29 Lam Research Corporation Method and apparatus for measurement of thin films and residues on semiconductor substrates
KR100665936B1 (ko) * 2004-04-21 2007-01-09 주식회사 나래나노텍 박막 성형공정에서 코팅막 두께 검출장치 및 방법
EP1591750B1 (de) * 2004-04-26 2016-04-13 Applied Materials GmbH & Co. KG Verfahren und Vorrichtung zur Regelung der Dicke einer Beschichtung auf einem in seiner Längsrichtung bewegten Band
US7248350B2 (en) * 2004-04-27 2007-07-24 E. I. Du Pont De Nemours And Company Non-destructive method of determining the refractive index of clear coats
US7396412B2 (en) 2004-12-22 2008-07-08 Sokudo Co., Ltd. Coat/develop module with shared dispense
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7339682B2 (en) * 2005-02-25 2008-03-04 Verity Instruments, Inc. Heterodyne reflectometer for film thickness monitoring and method for implementing
US7406394B2 (en) * 2005-08-22 2008-07-29 Applied Materials, Inc. Spectra based endpointing for chemical mechanical polishing
US8260446B2 (en) 2005-08-22 2012-09-04 Applied Materials, Inc. Spectrographic monitoring of a substrate during processing using index values
US7226339B2 (en) * 2005-08-22 2007-06-05 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
US8392012B2 (en) * 2008-10-27 2013-03-05 Applied Materials, Inc. Multiple libraries for spectrographic monitoring of zones of a substrate during processing
US7409260B2 (en) * 2005-08-22 2008-08-05 Applied Materials, Inc. Substrate thickness measuring during polishing
DE102005050432A1 (de) * 2005-10-21 2007-05-03 Rap.Id Particle Systems Gmbh Vorrichtung und Verfahren zur Charakterisierung von Gleitmittel und Hydrophobierungsfilmen in pharmazeutischen Behältnissen bezüglich Dicke und Homogenität
FR2898971A1 (fr) * 2006-03-27 2007-09-28 Commissariat Energie Atomique Procede de mesure, sans contact, d'une caracteristique opto-geometrique d'un materiau, par spectrometrie interferentielle
US7372579B2 (en) * 2006-04-20 2008-05-13 Infineon Technologies, Ag Apparatus and method for monitoring trench profiles and for spectrometrologic analysis
US7469164B2 (en) * 2006-06-26 2008-12-23 Nanometrics Incorporated Method and apparatus for process control with in-die metrology
US7998358B2 (en) 2006-10-31 2011-08-16 Applied Materials, Inc. Peak-based endpointing for chemical mechanical polishing
US7444198B2 (en) * 2006-12-15 2008-10-28 Applied Materials, Inc. Determining physical property of substrate
KR101504508B1 (ko) * 2007-02-23 2015-03-20 어플라이드 머티어리얼스, 인코포레이티드 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용
US7840375B2 (en) * 2007-04-02 2010-11-23 Applied Materials, Inc. Methods and apparatus for generating a library of spectra
KR100930383B1 (ko) * 2007-06-13 2009-12-08 주식회사 하이닉스반도체 포토마스크의 패턴 선폭 측정 방법
US20090275265A1 (en) * 2008-05-02 2009-11-05 Applied Materials, Inc. Endpoint detection in chemical mechanical polishing using multiple spectra
JP2012504752A (ja) * 2008-10-01 2012-02-23 ピーター ヴォルターズ ゲーエムベーハー 円盤状加工物の厚さを測定する方法
US20100103422A1 (en) * 2008-10-27 2010-04-29 Applied Materials, Inc. Goodness of fit in spectrographic monitoring of a substrate during processing
US8352061B2 (en) 2008-11-14 2013-01-08 Applied Materials, Inc. Semi-quantitative thickness determination
WO2011056485A2 (en) 2009-11-03 2011-05-12 Applied Materials, Inc. Endpoint method using peak location of spectra contour plots versus time
US8954186B2 (en) 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
JP5681453B2 (ja) * 2010-11-08 2015-03-11 株式会社ディスコ 測定方法および測定装置
NL2009273A (en) * 2011-08-31 2013-03-04 Asml Netherlands Bv Level sensor arrangement for lithographic apparatus, lithographic apparatus and device manufacturing method.
WO2014052811A1 (en) * 2012-09-28 2014-04-03 Rudolph Technologies, Inc. Inspection of substrates using calibration and imaging
US9157730B2 (en) * 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
TWI499756B (zh) * 2013-05-10 2015-09-11 Ind Tech Res Inst 接合層的厚度量測系統與方法
GB201319559D0 (en) * 2013-11-06 2013-12-18 Pilkington Group Ltd In-process monitoring of coatings on glass articles
US20150253127A1 (en) * 2014-03-04 2015-09-10 Honeywell Asca Inc. Thickness Determination of Web Product by Mid-infrared Wavelength Scanning Interferometry
FR3026484B1 (fr) * 2014-09-29 2018-06-15 Altatech Semiconductor Procede et systeme d'inspection de plaquettes transparentes pour l'electronique, l'optique ou l'optoelectronique
CN105136047B (zh) * 2015-05-28 2017-12-19 清华大学深圳研究生院 原位测量薄膜厚度变化的设备和方法
CN105784618B (zh) * 2016-04-27 2019-01-01 上海理工大学 一种非透射固体表面上溶液液膜参数测量装置及方法
CN106441125B (zh) * 2016-11-01 2019-03-19 淮阴师范学院 一种薄膜厚度测量方法及系统
JP6333351B1 (ja) * 2016-12-27 2018-05-30 Ntn株式会社 測定装置、塗布装置、および膜厚測定方法
CN108571933A (zh) * 2017-03-07 2018-09-25 台濠科技股份有限公司 运用近红外线量测晶圆厚度的方法
TW201923332A (zh) 2017-10-10 2019-06-16 荷蘭商Ａｓｍｌ荷蘭公司 度量衡方法和設備、電腦程式及微影系統
WO2019087848A1 (ja) * 2017-11-01 2019-05-09 コニカミノルタ株式会社 膜厚測定方法、膜厚測定システム、光反射フィルムの製造方法及び光反射フィルムの製造システム
KR102369936B1 (ko) * 2017-12-08 2022-03-03 삼성전자주식회사 광학 측정 방법
US12265327B2 (en) * 2018-07-30 2025-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing apparatus and method thereof
CN112747681A (zh) * 2019-10-31 2021-05-04 佳陞科技有限公司 一种非破坏性光学检测系统
CN110986801A (zh) * 2019-11-15 2020-04-10 富泰华精密电子（郑州）有限公司 检测装置、检测设备及检测方法
CN111238384A (zh) * 2020-02-27 2020-06-05 无锡市振华开祥科技有限公司 一种薄不锈钢零件镀层定性测厚方法
CN112729133B (zh) * 2020-12-18 2023-02-24 广东省大湾区集成电路与系统应用研究院 一种基于探测光栅衍射强度测量薄膜厚度的方法及装置
JP7616898B2 (ja) 2021-02-17 2025-01-17 東京エレクトロン株式会社 膜厚測定装置、成膜システム及び膜厚測定方法
US20240027916A1 (en) * 2022-07-21 2024-01-25 Applied Materials, Inc. Fingerprinting and process control of photosensitive film deposition chamber

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4660979A (en) 1984-08-17 1987-04-28 At&T Technologies, Inc. Method and apparatus for automatically measuring semiconductor etching process parameters
JPS6271804A (ja) * 1985-09-26 1987-04-02 Nippon Kogaku Kk <Nikon> 膜厚測定装置
US4787749A (en) 1985-11-28 1988-11-29 Canon Kabushiki Kaisha Method and apparatus for measuring the thickness of a thin film using the spectral reflection factor of the film
US4841156A (en) 1987-05-15 1989-06-20 Electronic Instrumentation And Technology, Inc. Measurement of the thickness of thin films
US4909631A (en) * 1987-12-18 1990-03-20 Tan Raul Y Method for film thickness and refractive index determination
JPH01304304A (ja) * 1988-05-31 1989-12-07 Shimadzu Corp 膜厚検査装置
JPH0252205A (ja) * 1988-08-17 1990-02-21 Dainippon Screen Mfg Co Ltd 膜厚測定方法
DE69033111T2 (de) * 1989-09-25 1999-09-09 Jasco Corp. Apparat und Verfahren für die Ausmessung von dünnen mehrschichtigen Lagen
DE69032005T2 (de) * 1990-04-13 1998-09-17 Hitachi Ltd Verfahren zum Kontrollieren der Dicke einer Dünnschicht während ihrer Herstellung
US5381442A (en) 1993-04-01 1995-01-10 Massachusetts Institute Of Technology Coherent Fourier transform radiometer for determining the thickness distribution of an oil film on a body of water based on the brightness temperature of the oil film and water over a range of radiation frequencies
US5450205A (en) 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
JPH07294220A (ja) * 1994-04-27 1995-11-10 Mitsubishi Chem Corp 多層薄膜の膜厚検出方法および装置
US5600441A (en) * 1995-01-31 1997-02-04 Zygo Corporation Interferometer and method for measuring the distance of an object surface with respect to the surface of a rotating disk
EP0756318A1 (de) * 1995-07-24 1997-01-29 International Business Machines Corporation Methode zur augenblicklichen in-situ-Überwachung eines Grabenformungsprozesses
JP3577840B2 (ja) * 1996-05-22 2004-10-20 株式会社デンソー 半導体厚測定装置及びその測定方法
US5744814A (en) 1997-03-24 1998-04-28 Nec Corporation Method and apparatus for scanning exposure having thickness measurements of a film surface

Also Published As

Publication number Publication date
HK1039173A1 (zh) 2002-04-12
WO2000012958A1 (en) 2000-03-09
EP1110054B1 (de) 2004-10-27
EP1110054A4 (de) 2001-10-31
CN1314991A (zh) 2001-09-26
ATE280941T1 (de) 2004-11-15
US6801321B1 (en) 2004-10-05
KR20010072848A (ko) 2001-07-31
JP2002523763A (ja) 2002-07-30
DE69921493T2 (de) 2006-02-02
CA2341403A1 (en) 2000-03-09
IL125964A (en) 2003-10-31
NO20010910D0 (no) 2001-02-23
IL125964A0 (en) 1999-04-11
AU5385599A (en) 2000-03-21
DE69921493D1 (de) 2004-12-02
KR100694772B1 (ko) 2007-03-13
EP1110054A1 (de) 2001-06-27
CN1151358C (zh) 2004-05-26

Similar Documents

Publication Publication Date Title
NO20010910L (no) Fremgangsmåte og apparat til måling av filmtykkelsen, s¶rlig en fotoresistfilm på et halvledersubstrat
NO20063289L (no) Fluorescensmaler
CA2136886A1 (en) Apparatus, system and method for real-time wafer temperature measurement based on light scattering
JPS6471122A (en) Method of inspecting quality of reticle mask pattern and the like, its object for monitor and method of inspecting object
EP1039509A4 (de) Ausrichteinrichtung,belichtungsverfahren unter verwendung der ausrichteinrichtung,und verfahren zur herstellung einer schaltungsanordnung
DE69733430D1 (de) System und verfahren zum ausführen von bestimmten optischen messungen
DK0524224T3 (da) Metode til at forbedre analysefølsomhed
DE69505749D1 (de) Dickenmessverfahren für transparentes material
SE0004227D0 (sv) Analysator för upplösta, fasta substanser
EP0772189A3 (de) Belichtungsapparat und -verfahren
EP0121340A3 (de) Verfahren und Vorrichtung zum Messen der Dicke dünner Filme
JPS647618A (en) Method and apparatus for exposing semiconductor
WO2004010118A8 (en) Method and apparatus for investigating histology of epithelial tissue
ATE263964T1 (de) Vorrichtung zum messen des magneto-optischen effektes
AU2002320642A1 (en) Transmissive optical disc assemblies for performing physical measurements
ATE23667T1 (de) Fingerabdrucksensor zum erzeugen eines dem topografischen relief eines zu untersuchenden fingers entsprechenden ausgangssignals.
MX9302281A (es) Metodo y aparato para inspeccionar recipientes.
KR880011587A (ko) 용액 모니터법
EP0176826A3 (de) Verfahren und Vorrichtung für spektrale Zweistrahldurchlässigkeitsmessungen
SE8200712L (sv) Sett och anordning for detektering av ytdefekter
KR950700533A (ko) 차동 굴절률 측정 방법 및 장치와 그 사용 방법(process and device for the differential measurement of refraction indexes and use thereof)
JPS6435306A (en) Incidence angle determining method for refractive index and film thickness measurement
NO953933L (no) Fremgangsmåte og apparat for prosesstyring
JPS56111405A (en) Method and device for measuring thickness of transparent film
JPS56130606A (en) Optical measuring device for thickness of transparent material

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application