NO20034441D0 - Halvlederinnretning og fremgangsmåte for fremstilling av samme - Google Patents
Halvlederinnretning og fremgangsmåte for fremstilling av sammeInfo
- Publication number
- NO20034441D0 NO20034441D0 NO20034441A NO20034441A NO20034441D0 NO 20034441 D0 NO20034441 D0 NO 20034441D0 NO 20034441 A NO20034441 A NO 20034441A NO 20034441 A NO20034441 A NO 20034441A NO 20034441 D0 NO20034441 D0 NO 20034441D0
- Authority
- NO
- Norway
- Prior art keywords
- semiconductor chips
- manufacturing
- same
- semiconductor device
- wirings
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
- H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
- H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/019—Manufacture or treatment using temporary auxiliary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/654—Top-view layouts
- H10W70/655—Fan-out layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/922—Bond pads being integral with underlying chip-level interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/981—Auxiliary members, e.g. spacers
- H10W72/983—Reinforcing structures, e.g. collars
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/142—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Dicing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002026808 | 2002-02-04 | ||
| JP2002117307A JP4135390B2 (ja) | 2002-04-19 | 2002-04-19 | 半導体装置およびその製造方法 |
| PCT/JP2003/001061 WO2003067648A2 (en) | 2002-02-04 | 2003-02-03 | Semiconductor device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO20034441D0 true NO20034441D0 (no) | 2003-10-03 |
| NO20034441L NO20034441L (no) | 2003-12-03 |
Family
ID=27736426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20034441A NO20034441L (no) | 2002-02-04 | 2003-10-03 | Halvlederanordning og fremgangsmåte for fremstilling av samme |
Country Status (10)
| Country | Link |
|---|---|
| US (3) | US7190064B2 (no) |
| EP (1) | EP1472724A2 (no) |
| KR (1) | KR100548668B1 (no) |
| CN (1) | CN100358118C (no) |
| AU (1) | AU2003244348A1 (no) |
| CA (1) | CA2443149C (no) |
| MX (1) | MXPA03009043A (no) |
| NO (1) | NO20034441L (no) |
| TW (1) | TW577160B (no) |
| WO (1) | WO2003067648A2 (no) |
Families Citing this family (100)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004015771A2 (en) * | 2002-08-09 | 2004-02-19 | Casio Computer Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP2004349361A (ja) * | 2003-05-21 | 2004-12-09 | Casio Comput Co Ltd | 半導体装置およびその製造方法 |
| JP4012496B2 (ja) * | 2003-09-19 | 2007-11-21 | カシオ計算機株式会社 | 半導体装置 |
| US7489032B2 (en) * | 2003-12-25 | 2009-02-10 | Casio Computer Co., Ltd. | Semiconductor device including a hard sheet to reduce warping of a base plate and method of fabricating the same |
| JP4271590B2 (ja) * | 2004-01-20 | 2009-06-03 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| JP4093186B2 (ja) * | 2004-01-27 | 2008-06-04 | カシオ計算機株式会社 | 半導体装置の製造方法 |
| JP4441282B2 (ja) * | 2004-02-02 | 2010-03-31 | 富士フイルム株式会社 | 蒸着マスク及び有機el表示デバイスの製造方法 |
| JP3819395B2 (ja) * | 2004-02-20 | 2006-09-06 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| JP4381191B2 (ja) * | 2004-03-19 | 2009-12-09 | Okiセミコンダクタ株式会社 | 半導体パッケージ及び半導体装置の製造方法 |
| US7342312B2 (en) * | 2004-09-29 | 2008-03-11 | Rohm Co., Ltd. | Semiconductor device |
| JP2006100666A (ja) * | 2004-09-30 | 2006-04-13 | Toshiba Corp | 半導体装置及びその製造方法 |
| US20090166856A1 (en) * | 2004-12-03 | 2009-07-02 | Yuki Iwata | Semiconductor Device |
| US7468545B2 (en) * | 2005-05-06 | 2008-12-23 | Megica Corporation | Post passivation structure for a semiconductor device and packaging process for same |
| US7582556B2 (en) | 2005-06-24 | 2009-09-01 | Megica Corporation | Circuitry component and method for forming the same |
| JP4458010B2 (ja) * | 2005-09-26 | 2010-04-28 | カシオ計算機株式会社 | 半導体装置 |
| JP4395775B2 (ja) * | 2005-10-05 | 2010-01-13 | ソニー株式会社 | 半導体装置及びその製造方法 |
| CN100481426C (zh) * | 2006-07-07 | 2009-04-22 | 晶宏半导体股份有限公司 | 同排凸块交错探测的半导体装置 |
| DE102006032251A1 (de) * | 2006-07-12 | 2008-01-17 | Infineon Technologies Ag | Verfahren zum Herstellen von Chip-Packages sowie derartig hergestelltes Chip-Package |
| TWI336913B (en) * | 2006-07-18 | 2011-02-01 | Via Tech Inc | A chip and manufacturing method and application thereof |
| US7569422B2 (en) * | 2006-08-11 | 2009-08-04 | Megica Corporation | Chip package and method for fabricating the same |
| JP4922891B2 (ja) | 2006-11-08 | 2012-04-25 | 株式会社テラミクロス | 半導体装置およびその製造方法 |
| US20080145484A1 (en) * | 2006-12-14 | 2008-06-19 | Leslie Michelle Haywood | Food marking tag |
| JP2008159820A (ja) * | 2006-12-22 | 2008-07-10 | Tdk Corp | 電子部品の一括実装方法、及び電子部品内蔵基板の製造方法 |
| JP2008159819A (ja) * | 2006-12-22 | 2008-07-10 | Tdk Corp | 電子部品の実装方法、電子部品内蔵基板の製造方法、及び電子部品内蔵基板 |
| TWI320588B (en) * | 2006-12-27 | 2010-02-11 | Siliconware Precision Industries Co Ltd | Semiconductor device having conductive bumps and fabrication methodthereof |
| TWI343084B (en) * | 2006-12-28 | 2011-06-01 | Siliconware Precision Industries Co Ltd | Semiconductor device having conductive bumps and fabrication methodthereof |
| JP2008211125A (ja) | 2007-02-28 | 2008-09-11 | Spansion Llc | 半導体装置およびその製造方法 |
| US20090039514A1 (en) * | 2007-08-08 | 2009-02-12 | Casio Computer Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2009043857A (ja) * | 2007-08-08 | 2009-02-26 | Casio Comput Co Ltd | 半導体装置およびその製造方法 |
| JP4752825B2 (ja) | 2007-08-24 | 2011-08-17 | カシオ計算機株式会社 | 半導体装置の製造方法 |
| US8018043B2 (en) * | 2008-03-10 | 2011-09-13 | Hynix Semiconductor Inc. | Semiconductor package having side walls and method for manufacturing the same |
| KR100959604B1 (ko) * | 2008-03-10 | 2010-05-27 | 주식회사 하이닉스반도체 | 웨이퍼 레벨 반도체 패키지 및 이의 제조 방법 |
| US7749814B2 (en) * | 2008-03-13 | 2010-07-06 | Stats Chippac, Ltd. | Semiconductor device with integrated passive circuit and method of making the same using sacrificial substrate |
| JP5289830B2 (ja) * | 2008-06-06 | 2013-09-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR20100000328A (ko) * | 2008-06-24 | 2010-01-06 | 삼성전자주식회사 | 조인트 신뢰성이 향상된 반도체 패키지 및 그 제조방법 |
| JP5436837B2 (ja) * | 2008-10-30 | 2014-03-05 | 新光電気工業株式会社 | 半導体装置内蔵基板の製造方法 |
| JP5436836B2 (ja) * | 2008-10-30 | 2014-03-05 | 新光電気工業株式会社 | 半導体装置内蔵基板の製造方法 |
| JP4420965B1 (ja) * | 2008-10-30 | 2010-02-24 | 新光電気工業株式会社 | 半導体装置内蔵基板の製造方法 |
| US8704350B2 (en) * | 2008-11-13 | 2014-04-22 | Samsung Electro-Mechanics Co., Ltd. | Stacked wafer level package and method of manufacturing the same |
| US9735136B2 (en) * | 2009-03-09 | 2017-08-15 | Micron Technology, Inc. | Method for embedding silicon die into a stacked package |
| FR2946795B1 (fr) * | 2009-06-12 | 2011-07-22 | 3D Plus | Procede de positionnement des puces lors de la fabrication d'une plaque reconstituee |
| KR101169531B1 (ko) | 2009-07-03 | 2012-07-27 | 가부시키가이샤 테라미크로스 | 반도체구성체 및 그 제조방법과 반도체장치 및 그 제조방법 |
| TWI528514B (zh) * | 2009-08-20 | 2016-04-01 | 精材科技股份有限公司 | 晶片封裝體及其製造方法 |
| JP5401292B2 (ja) | 2009-12-15 | 2014-01-29 | ルネサスエレクトロニクス株式会社 | 半導体装置及び通信方法 |
| US8901724B2 (en) * | 2009-12-29 | 2014-12-02 | Intel Corporation | Semiconductor package with embedded die and its methods of fabrication |
| US8884422B2 (en) * | 2009-12-31 | 2014-11-11 | Stmicroelectronics Pte Ltd. | Flip-chip fan-out wafer level package for package-on-package applications, and method of manufacture |
| US20110156240A1 (en) * | 2009-12-31 | 2011-06-30 | Stmicroelectronics Asia Pacific Pte. Ltd. | Reliable large die fan-out wafer level package and method of manufacture |
| US8759209B2 (en) * | 2010-03-25 | 2014-06-24 | Stats Chippac, Ltd. | Semiconductor device and method of forming a dual UBM structure for lead free bump connections |
| CN203242609U (zh) * | 2010-06-02 | 2013-10-16 | 株式会社村田制作所 | Esd保护装置 |
| US8445990B2 (en) * | 2010-12-10 | 2013-05-21 | Stats Chippac, Ltd. | Semiconductor device and method of forming an inductor within interconnect layer vertically separated from semiconductor die |
| CN102244061A (zh) * | 2011-07-18 | 2011-11-16 | 江阴长电先进封装有限公司 | Low-k芯片封装结构 |
| US20130051116A1 (en) * | 2011-08-24 | 2013-02-28 | Advanced Micro Devices, Inc. | Integrated circuit with face-to-face bonded passive variable resistance memory and method for making the same |
| US9013037B2 (en) | 2011-09-14 | 2015-04-21 | Stmicroelectronics Pte Ltd. | Semiconductor package with improved pillar bump process and structure |
| US8916481B2 (en) | 2011-11-02 | 2014-12-23 | Stmicroelectronics Pte Ltd. | Embedded wafer level package for 3D and package-on-package applications, and method of manufacture |
| US20130146345A1 (en) * | 2011-12-12 | 2013-06-13 | Kazuki KAJIHARA | Printed wiring board and method for manufacturing the same |
| US9484319B2 (en) * | 2011-12-23 | 2016-11-01 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming extended semiconductor device with fan-out interconnect structure to reduce complexity of substrate |
| US9000584B2 (en) | 2011-12-28 | 2015-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaged semiconductor device with a molding compound and a method of forming the same |
| TWI528876B (zh) * | 2012-03-22 | 2016-04-01 | 矽品精密工業股份有限公司 | 中介板及其電性測試方法 |
| US8901730B2 (en) | 2012-05-03 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for package on package devices |
| US10622310B2 (en) | 2012-09-26 | 2020-04-14 | Ping-Jung Yang | Method for fabricating glass substrate package |
| US9136236B2 (en) | 2012-09-28 | 2015-09-15 | Intel Corporation | Localized high density substrate routing |
| US8912670B2 (en) | 2012-09-28 | 2014-12-16 | Intel Corporation | Bumpless build-up layer package including an integrated heat spreader |
| US9190380B2 (en) | 2012-12-06 | 2015-11-17 | Intel Corporation | High density substrate routing in BBUL package |
| US9349703B2 (en) | 2013-09-25 | 2016-05-24 | Intel Corporation | Method for making high density substrate interconnect using inkjet printing |
| US9159690B2 (en) | 2013-09-25 | 2015-10-13 | Intel Corporation | Tall solders for through-mold interconnect |
| JP6415365B2 (ja) | 2014-03-28 | 2018-10-31 | 株式会社ジェイデバイス | 半導体パッケージ |
| JP6417142B2 (ja) * | 2014-07-23 | 2018-10-31 | 株式会社ジェイデバイス | 半導体装置及びその製造方法 |
| US9449908B2 (en) | 2014-07-30 | 2016-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package system and method |
| CN106971993B (zh) | 2016-01-14 | 2021-10-15 | 三星电子株式会社 | 半导体封装件 |
| KR102595276B1 (ko) | 2016-01-14 | 2023-10-31 | 삼성전자주식회사 | 반도체 패키지 |
| US10068853B2 (en) * | 2016-05-05 | 2018-09-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated fan-out package and method of fabricating the same |
| US10109502B2 (en) | 2016-09-12 | 2018-10-23 | Qorvo Us, Inc. | Semiconductor package with reduced parasitic coupling effects and process for making the same |
| US20180122679A1 (en) * | 2016-10-28 | 2018-05-03 | Applied Materials, Inc. | Stress balanced electrostatic substrate carrier with contacts |
| US10410940B2 (en) * | 2017-06-30 | 2019-09-10 | Intel Corporation | Semiconductor package with cavity |
| US10665522B2 (en) * | 2017-12-22 | 2020-05-26 | Intel IP Corporation | Package including an integrated routing layer and a molded routing layer |
| US11152363B2 (en) | 2018-03-28 | 2021-10-19 | Qorvo Us, Inc. | Bulk CMOS devices with enhanced performance and methods of forming the same utilizing bulk CMOS process |
| WO2019195428A1 (en) | 2018-04-04 | 2019-10-10 | Qorvo Us, Inc. | Gallium-nitride-based module with enhanced electrical performance and process for making the same |
| US12046505B2 (en) * | 2018-04-20 | 2024-07-23 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation |
| US10748831B2 (en) * | 2018-05-30 | 2020-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor packages having thermal through vias (TTV) |
| US10804246B2 (en) | 2018-06-11 | 2020-10-13 | Qorvo Us, Inc. | Microelectronics package with vertically stacked dies |
| US12165951B2 (en) | 2018-07-02 | 2024-12-10 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| US11069590B2 (en) | 2018-10-10 | 2021-07-20 | Qorvo Us, Inc. | Wafer-level fan-out package with enhanced performance |
| US10964554B2 (en) | 2018-10-10 | 2021-03-30 | Qorvo Us, Inc. | Wafer-level fan-out package with enhanced performance |
| US11646242B2 (en) | 2018-11-29 | 2023-05-09 | Qorvo Us, Inc. | Thermally enhanced semiconductor package with at least one heat extractor and process for making the same |
| US12057374B2 (en) * | 2019-01-23 | 2024-08-06 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| US12046483B2 (en) | 2019-01-23 | 2024-07-23 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| EP3915134A1 (en) | 2019-01-23 | 2021-12-01 | Qorvo US, Inc. | Rf semiconductor device and manufacturing method thereof |
| US11387157B2 (en) * | 2019-01-23 | 2022-07-12 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| US12046570B2 (en) * | 2019-01-23 | 2024-07-23 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| US12125825B2 (en) | 2019-01-23 | 2024-10-22 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| US11296030B2 (en) * | 2019-04-29 | 2022-04-05 | Advanced Semiconductor Engineering, Inc. | Embedded component package structure and manufacturing method thereof |
| US12074086B2 (en) | 2019-11-01 | 2024-08-27 | Qorvo Us, Inc. | RF devices with nanotube particles for enhanced performance and methods of forming the same |
| US11646289B2 (en) | 2019-12-02 | 2023-05-09 | Qorvo Us, Inc. | RF devices with enhanced performance and methods of forming the same |
| US11923238B2 (en) | 2019-12-12 | 2024-03-05 | Qorvo Us, Inc. | Method of forming RF devices with enhanced performance including attaching a wafer to a support carrier by a bonding technique without any polymer adhesive |
| US12129168B2 (en) | 2019-12-23 | 2024-10-29 | Qorvo Us, Inc. | Microelectronics package with vertically stacked MEMS device and controller device |
| US11735554B2 (en) * | 2020-08-14 | 2023-08-22 | Sj Semiconductor (Jiangyin) Corporation | Wafer-level chip scale packaging structure having a rewiring layer and method for manufacturing the wafer-level chip scale packaging structure |
| CN116583949A (zh) | 2020-12-11 | 2023-08-11 | Qorvo美国公司 | 多级3d堆叠式封装和其形成方法 |
| CN114678279B (zh) * | 2021-01-27 | 2024-11-01 | 北京新能源汽车股份有限公司 | 半导体器件及其制作方法 |
| KR102902631B1 (ko) | 2021-01-29 | 2025-12-22 | 삼성전자주식회사 | 포스트를 포함하는 반도체 패키지 |
| US12062571B2 (en) | 2021-03-05 | 2024-08-13 | Qorvo Us, Inc. | Selective etching process for SiGe and doped epitaxial silicon |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5111278A (en) * | 1991-03-27 | 1992-05-05 | Eichelberger Charles W | Three-dimensional multichip module systems |
| US6400573B1 (en) * | 1993-02-09 | 2002-06-04 | Texas Instruments Incorporated | Multi-chip integrated circuit module |
| JP3280876B2 (ja) | 1996-01-22 | 2002-05-13 | 日本テキサス・インスツルメンツ株式会社 | ウェハダイシング・接着用シートおよび半導体装置の製造方法 |
| US5841193A (en) | 1996-05-20 | 1998-11-24 | Epic Technologies, Inc. | Single chip modules, repairable multichip modules, and methods of fabrication thereof |
| JPH11233678A (ja) | 1998-02-16 | 1999-08-27 | Sumitomo Metal Electronics Devices Inc | Icパッケージの製造方法 |
| JP2000124354A (ja) * | 1998-10-21 | 2000-04-28 | Matsushita Electric Ind Co Ltd | チップサイズパッケージ及びその製造方法 |
| US6140155A (en) * | 1998-12-24 | 2000-10-31 | Casio Computer Co., Ltd. | Method of manufacturing semiconductor device using dry photoresist film |
| JP3465617B2 (ja) * | 1999-02-15 | 2003-11-10 | カシオ計算機株式会社 | 半導体装置 |
| JP3455762B2 (ja) | 1999-11-11 | 2003-10-14 | カシオ計算機株式会社 | 半導体装置およびその製造方法 |
| US6271469B1 (en) * | 1999-11-12 | 2001-08-07 | Intel Corporation | Direct build-up layer on an encapsulated die package |
| US6154366A (en) * | 1999-11-23 | 2000-11-28 | Intel Corporation | Structures and processes for fabricating moisture resistant chip-on-flex packages |
| JP4376388B2 (ja) | 1999-12-13 | 2009-12-02 | パナソニック株式会社 | 半導体装置 |
| US6348728B1 (en) * | 2000-01-28 | 2002-02-19 | Fujitsu Limited | Semiconductor device having a plurality of semiconductor elements interconnected by a redistribution layer |
| JP3813402B2 (ja) * | 2000-01-31 | 2006-08-23 | 新光電気工業株式会社 | 半導体装置の製造方法 |
| US6871396B2 (en) * | 2000-02-09 | 2005-03-29 | Matsushita Electric Industrial Co., Ltd. | Transfer material for wiring substrate |
| JP3772066B2 (ja) * | 2000-03-09 | 2006-05-10 | 沖電気工業株式会社 | 半導体装置 |
| JP2001339011A (ja) | 2000-03-24 | 2001-12-07 | Shinko Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JP3548082B2 (ja) * | 2000-03-30 | 2004-07-28 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
| JP2001320015A (ja) | 2000-05-12 | 2001-11-16 | Sony Corp | 半導体装置およびその製造方法 |
| JP3455948B2 (ja) | 2000-05-19 | 2003-10-14 | カシオ計算機株式会社 | 半導体装置およびその製造方法 |
| US6847066B2 (en) * | 2000-08-11 | 2005-01-25 | Oki Electric Industry Co., Ltd. | Semiconductor device |
| US6720644B2 (en) * | 2000-10-10 | 2004-04-13 | Sony Corporation | Semiconductor device using interposer substrate and manufacturing method therefor |
| JP4618919B2 (ja) | 2000-12-15 | 2011-01-26 | イビデン株式会社 | 半導体素子を内蔵する多層プリント配線板の製造方法 |
| JP4771608B2 (ja) | 2000-12-15 | 2011-09-14 | イビデン株式会社 | プリント配線板 |
| TW517361B (en) * | 2001-12-31 | 2003-01-11 | Megic Corp | Chip package structure and its manufacture process |
| US20030197285A1 (en) * | 2002-04-23 | 2003-10-23 | Kulicke & Soffa Investments, Inc. | High density substrate for the packaging of integrated circuits |
| US6770971B2 (en) * | 2002-06-14 | 2004-08-03 | Casio Computer Co., Ltd. | Semiconductor device and method of fabricating the same |
| WO2004015771A2 (en) * | 2002-08-09 | 2004-02-19 | Casio Computer Co., Ltd. | Semiconductor device and method of manufacturing the same |
-
2003
- 2003-01-30 TW TW092102111A patent/TW577160B/zh not_active IP Right Cessation
- 2003-02-03 CN CNB038001284A patent/CN100358118C/zh not_active Expired - Lifetime
- 2003-02-03 KR KR1020037012972A patent/KR100548668B1/ko not_active Expired - Fee Related
- 2003-02-03 MX MXPA03009043A patent/MXPA03009043A/es unknown
- 2003-02-03 EP EP03737462A patent/EP1472724A2/en not_active Withdrawn
- 2003-02-03 WO PCT/JP2003/001061 patent/WO2003067648A2/en not_active Ceased
- 2003-02-03 AU AU2003244348A patent/AU2003244348A1/en not_active Abandoned
- 2003-02-03 CA CA002443149A patent/CA2443149C/en not_active Expired - Fee Related
- 2003-02-03 US US10/472,803 patent/US7190064B2/en not_active Expired - Lifetime
- 2003-10-03 NO NO20034441A patent/NO20034441L/no unknown
-
2006
- 2006-05-05 US US11/429,368 patent/US20060202353A1/en not_active Abandoned
- 2006-10-27 US US11/588,647 patent/US7514335B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2443149A1 (en) | 2003-08-14 |
| TW200303609A (en) | 2003-09-01 |
| TW577160B (en) | 2004-02-21 |
| EP1472724A2 (en) | 2004-11-03 |
| US7190064B2 (en) | 2007-03-13 |
| CN1633705A (zh) | 2005-06-29 |
| KR100548668B1 (ko) | 2006-02-03 |
| WO2003067648A2 (en) | 2003-08-14 |
| US20070042594A1 (en) | 2007-02-22 |
| US20060202353A1 (en) | 2006-09-14 |
| NO20034441L (no) | 2003-12-03 |
| CA2443149C (en) | 2008-01-08 |
| MXPA03009043A (es) | 2004-02-18 |
| US20050098891A1 (en) | 2005-05-12 |
| US7514335B2 (en) | 2009-04-07 |
| WO2003067648A3 (en) | 2003-10-30 |
| CN100358118C (zh) | 2007-12-26 |
| KR20040030560A (ko) | 2004-04-09 |
| AU2003244348A1 (en) | 2003-09-02 |
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