NO20084573L - Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker - Google Patents

Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker

Info

Publication number: NO20084573L
Authority: NO; Norway
Prior art keywords: semiconductor substrate; uneven structure; solar; etching; preparation
Prior art date: 2006-05-02

Application number

NO20084573A

Other languages

English (en)

Norwegian (no)

Inventor

Masato Tsuchiya

Ikuo Mashimo

Yoshimichi Kimura

Original Assignee

Space Energy Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-05-02

Filing date

2008-11-03

Publication date

2009-01-20

2008-11-03 Application filed by Space Energy Corp filed Critical Space Energy Corp

2009-01-20 Publication of NO20084573L publication Critical patent/NO20084573L/no

Links

239000004065 semiconductor Substances 0.000 title abstract 7
239000000758 substrate Substances 0.000 title abstract 7
238000005530 etching Methods 0.000 title abstract 5
238000000034 method Methods 0.000 title abstract 3
239000012530 fluid Substances 0.000 title 1
238000002360 preparation method Methods 0.000 title 1
125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract 1
150000001735 carboxylic acids Chemical class 0.000 abstract 1
238000006243 chemical reaction Methods 0.000 abstract 1
229920001296 polysiloxane Polymers 0.000 abstract 1
150000003839 salts Chemical class 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy

Landscapes

Weting (AREA)
Photovoltaic Devices (AREA)

NO20084573A 2006-05-02 2008-11-03 Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker NO20084573L (no)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2006128453		2006-05-02
PCT/JP2007/058666 WO2007129555A1 (fr)	2006-05-02	2007-04-20	Procédé de fabrication DE substrat de semi-conducteur, substrat de semi-conducteur solaire et liquide d'attaque chimique

Publications (1)

Publication Number	Publication Date
NO20084573L true NO20084573L (no)	2009-01-20

Family

ID=38667663

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NO20084573A NO20084573L (no)	2006-05-02	2008-11-03	Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker

Country Status (9)

Country	Link
US (1)	US20090266414A1 (fr)
EP (1)	EP2015351A1 (fr)
JP (1)	JP4795430B2 (fr)
KR (1)	KR101010531B1 (fr)
CN (1)	CN101432855B (fr)
MY (1)	MY150000A (fr)
NO (1)	NO20084573L (fr)
TW (1)	TWI445073B (fr)
WO (1)	WO2007129555A1 (fr)

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JPWO2009072438A1 (ja) *	2007-12-04	2011-04-21	三益半導体工業株式会社	多結晶シリコン基板の製造方法及び多結晶シリコン基板
JP5302551B2 (ja) *	2008-02-28	2013-10-02	林純薬工業株式会社	シリコン異方性エッチング液組成物
KR101168589B1 (ko)	2008-03-26	2012-07-30	엘지전자 주식회사	계면 활성제를 이용한 실리콘 태양전지의 텍스처링 방법
DE102009060931A1 (de) *	2009-12-23	2011-06-30	Gebr. Schmid GmbH & Co., 72250	Verfahren und Vorrichtung zur Behandlung von Siliziumsubstraten
CN101792667A (zh) *	2010-04-01	2010-08-04	江阴市江化微电子材料有限公司	一种低张力ito蚀刻液
JP2011258767A (ja) *	2010-06-09	2011-12-22	Sharp Corp	太陽電池
KR20120015485A (ko) *	2010-08-12	2012-02-22	동우 화인켐 주식회사	결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법
KR20120015484A (ko)	2010-08-12	2012-02-22	동우 화인켐 주식회사	결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법
JP5648392B2 (ja) *	2010-09-22	2015-01-07	凸版印刷株式会社	反射型フォトマスクブランクおよびその製造方法
SG11201401176VA (en) *	2011-10-14	2014-10-30	Shuyan Xu	Alkaline solution for texturing monocrystalline silicon substrate
WO2013089641A1 (fr) *	2011-12-12	2013-06-20	Xu Shuyan	Structuration chimique de substrat de silicium monocristallin
KR20130068759A (ko) *	2011-12-16	2013-06-26	동우 화인켐 주식회사	결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
US20150125985A1 (en)	2012-05-11	2015-05-07	Wako Pure Chemical Industries, Ltd.	Etching fluid and production method for silicon-based substrate using same
JPWO2014010471A1 (ja) *	2012-07-09	2016-06-23	攝津製油株式会社	エッチング液、エッチング力回復剤、太陽電池用半導体基板の製造方法、及び太陽電池用半導体基板
CN105518834B (zh) *	2013-09-19	2018-02-16	摄津制油株式会社	半导体基板用蚀刻液
WO2016063881A1 (fr)	2014-10-21	2016-04-28	攝津製油株式会社	Liquide de gravure pour substrat semiconducteur
US20190214460A1 (en) *	2016-09-30	2019-07-11	Intel Corporation	Fabricating nanowire transistors using directional selective etching
CN114792740B (zh) *	2022-03-25	2023-04-21	安徽华晟新能源科技有限公司	半导体衬底层的制备方法及太阳能电池的制备方法
CN115011348B (zh) *	2022-06-30	2023-12-29	湖北兴福电子材料股份有限公司	一种氮化铝蚀刻液及其应用

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FR96065E (fr) *	1967-11-01	1972-05-19	Western Electric Co	Procédé de gravure précise de semiconducteurs.
US4137123A (en) *	1975-12-31	1979-01-30	Motorola, Inc.	Texture etching of silicon: method
JPS58197717A (ja) *	1982-05-13	1983-11-17	Toshiba Corp	半導体装置の製造方法
JP3188902B2 (ja) *	1992-04-09	2001-07-16	ワッカー・エヌエスシーイー株式会社	シリコンウエハのエッチング方法及びこれを用いるエッチング溶液
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JP3602323B2 (ja) *	1998-01-30	2004-12-15	三菱電機株式会社	太陽電池の製造方法
JP3695932B2 (ja)	1998-02-12	2005-09-14	三洋電機株式会社	凹凸基板の製造方法
DE19811878C2 (de) *	1998-03-18	2002-09-19	Siemens Solar Gmbh	Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen
JP2000277473A (ja) *	1999-03-24	2000-10-06	Mitsubishi Materials Silicon Corp	シリコンウエーハの洗浄方法
JP3948890B2 (ja)	2000-08-09	2007-07-25	三洋電機株式会社	凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法
CN1284248C (zh) *	2000-10-06	2006-11-08	信越半导体株式会社	太阳能电池及其制造方法
JP3994390B2 (ja) *	2003-06-06	2007-10-17	株式会社Ｓｕｍｃｏ	半導体ウェーハ処理用のアルカリ溶液およびその製法
JP3740138B2 (ja) *	2003-06-25	2006-02-01	直江津電子工業株式会社	テクスチャー形成用エッチング液
JP2005158759A (ja) *	2003-08-29	2005-06-16	Sumitomo Mitsubishi Silicon Corp	シリコン体のアルカリ処理技術
CN1690120A (zh) *	2004-03-01	2005-11-02	三菱瓦斯化学株式会社	具有高减震能力的树脂组合物
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TWI244135B (en) *	2004-12-31	2005-11-21	Ind Tech Res Inst	Method of making solar cell
US7452481B2 (en) *	2005-05-16	2008-11-18	Kabushiki Kaisha Kobe Seiko Sho	Polishing slurry and method of reclaiming wafers

2007
- 2007-04-20 EP EP07742101A patent/EP2015351A1/fr not_active Withdrawn
- 2007-04-20 KR KR1020087023601A patent/KR101010531B1/ko not_active Expired - Fee Related
- 2007-04-20 WO PCT/JP2007/058666 patent/WO2007129555A1/fr not_active Ceased
- 2007-04-20 US US12/296,648 patent/US20090266414A1/en not_active Abandoned
- 2007-04-20 JP JP2008514425A patent/JP4795430B2/ja not_active Expired - Fee Related
- 2007-04-20 CN CN2007800150524A patent/CN101432855B/zh not_active Expired - Fee Related
- 2007-04-20 MY MYPI20084034A patent/MY150000A/en unknown
- 2007-04-27 TW TW096115130A patent/TWI445073B/zh not_active IP Right Cessation
2008
- 2008-11-03 NO NO20084573A patent/NO20084573L/no not_active Application Discontinuation

Also Published As

Publication number	Publication date
KR101010531B1 (ko)	2011-01-24
JP4795430B2 (ja)	2011-10-19
TWI445073B (zh)	2014-07-11
EP2015351A1 (fr)	2009-01-14
JPWO2007129555A1 (ja)	2009-09-17
WO2007129555A1 (fr)	2007-11-15
MY150000A (en)	2013-11-15
TW200807547A (en)	2008-02-01
KR20080104030A (ko)	2008-11-28
CN101432855B (zh)	2011-03-16
CN101432855A (zh)	2009-05-13
US20090266414A1 (en)	2009-10-29

Legal Events

Date	Code	Title	Description
2013-12-02	FC2A	Withdrawal, rejection or dismissal of laid open patent application

Publication	Publication Date	Title
NO20084573L (no)	2009-01-20	Fremgangsmate for fremstilling av halvleder substrat, solenergidrevet halvleder substrat, og etsevaesker
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