NO891993L - Halvleder-byggeelement. - Google Patents

Halvleder-byggeelement.

Info

Publication number
NO891993L
NO891993L NO89891993A NO891993A NO891993L NO 891993 L NO891993 L NO 891993L NO 89891993 A NO89891993 A NO 89891993A NO 891993 A NO891993 A NO 891993A NO 891993 L NO891993 L NO 891993L
Authority
NO
Norway
Prior art keywords
charge
building element
channel
element according
semiconductor building
Prior art date
Application number
NO89891993A
Other languages
English (en)
Norwegian (no)
Other versions
NO891993D0 (no
Inventor
Josef Kemmer
Peter Holl
Gerhard Lutz
Lothar Strueder
Original Assignee
Messerschmitt Boelkow Blohm
Gerhard Lutz
Lothar Strueder
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messerschmitt Boelkow Blohm, Gerhard Lutz, Lothar Strueder filed Critical Messerschmitt Boelkow Blohm
Publication of NO891993D0 publication Critical patent/NO891993D0/no
Publication of NO891993L publication Critical patent/NO891993L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/466—Three-phase CCD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Electronic Switches (AREA)
  • Iron Core Of Rotating Electric Machines (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NO89891993A 1988-05-19 1989-05-18 Halvleder-byggeelement. NO891993L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3817153A DE3817153A1 (de) 1988-05-19 1988-05-19 Halbleiter-bauelement

Publications (2)

Publication Number Publication Date
NO891993D0 NO891993D0 (no) 1989-05-18
NO891993L true NO891993L (no) 1989-11-20

Family

ID=6354740

Family Applications (1)

Application Number Title Priority Date Filing Date
NO89891993A NO891993L (no) 1988-05-19 1989-05-18 Halvleder-byggeelement.

Country Status (4)

Country Link
EP (1) EP0342699A3 (ja)
JP (1) JPH0222830A (ja)
DE (1) DE3817153A1 (ja)
NO (1) NO891993L (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252294A (en) * 1988-06-01 1993-10-12 Messerschmitt-Bolkow-Blohm Gmbh Micromechanical structure
EP0371197B1 (de) * 1988-11-23 1994-12-21 TEMIC TELEFUNKEN microelectronic GmbH Bildsensor
DE3839513A1 (de) * 1988-11-23 1990-05-31 Messerschmitt Boelkow Blohm Bildsensor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2589003B1 (fr) * 1985-10-18 1987-11-20 Thomson Csf Procede de realisation d'un dispositif a transfert de charge et dispositif a transfert de charge mettant en oeuvre ce procede
CA1075811A (en) * 1970-10-29 1980-04-15 George E. Smith Charge coupled device
DE3418778A1 (de) * 1984-05-19 1985-11-21 Josef Dr. 8048 Haimhausen Kemmer Ccd-halbleiterbauelement
DE3427476A1 (de) * 1984-04-25 1985-10-31 Josef Dr. 8048 Haimhausen Kemmer Halbleiterelement

Also Published As

Publication number Publication date
JPH0222830A (ja) 1990-01-25
NO891993D0 (no) 1989-05-18
EP0342699A2 (de) 1989-11-23
DE3817153C2 (ja) 1991-07-18
EP0342699A3 (de) 1990-08-29
DE3817153A1 (de) 1989-11-30

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