NO921094L - Hoey-mobilitets integrerte drivere for aktive matriseskjermer - Google Patents

Hoey-mobilitets integrerte drivere for aktive matriseskjermer

Info

Publication number
NO921094L
NO921094L NO92921094A NO921094A NO921094L NO 921094 L NO921094 L NO 921094L NO 92921094 A NO92921094 A NO 92921094A NO 921094 A NO921094 A NO 921094A NO 921094 L NO921094 L NO 921094L
Authority
NO
Norway
Prior art keywords
glass
crystal silicon
drivers
low
layer
Prior art date
Application number
NO92921094A
Other languages
English (en)
Norwegian (no)
Other versions
NO921094D0 (no
Inventor
Kalluri R Sarma
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of NO921094D0 publication Critical patent/NO921094D0/no
Publication of NO921094L publication Critical patent/NO921094L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Element Separation (AREA)
NO92921094A 1991-03-28 1992-03-19 Hoey-mobilitets integrerte drivere for aktive matriseskjermer NO921094L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67699891A 1991-03-28 1991-03-28

Publications (2)

Publication Number Publication Date
NO921094D0 NO921094D0 (no) 1992-03-19
NO921094L true NO921094L (no) 1992-09-29

Family

ID=24716883

Family Applications (1)

Application Number Title Priority Date Filing Date
NO92921094A NO921094L (no) 1991-03-28 1992-03-19 Hoey-mobilitets integrerte drivere for aktive matriseskjermer

Country Status (10)

Country Link
US (1) US5281840A (fr)
EP (1) EP0510368B1 (fr)
JP (1) JP3314345B2 (fr)
KR (1) KR100201715B1 (fr)
CA (1) CA2061796C (fr)
DE (1) DE69209126T2 (fr)
DK (1) DK0510368T3 (fr)
FI (1) FI921312A7 (fr)
IL (1) IL101218A (fr)
NO (1) NO921094L (fr)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2566175B2 (ja) * 1990-04-27 1996-12-25 セイコー電子工業株式会社 半導体装置及びその製造方法
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
JP3254007B2 (ja) 1992-06-09 2002-02-04 株式会社半導体エネルギー研究所 薄膜状半導体装置およびその作製方法
DE69329545T2 (de) * 1992-12-25 2001-05-31 Canon K.K., Tokio/Tokyo Halbleitervorrichtung für Flüssigkristall-Anzeigevorrichtung und Verfahren zu ihrer Herstellung
WO1994015364A1 (fr) * 1992-12-29 1994-07-07 Honeywell Inc. Semiconducteur a depletion menage sur des transistors complementaires de seuil inferieur formes sur un isolateur
US5258323A (en) * 1992-12-29 1993-11-02 Honeywell Inc. Single crystal silicon on quartz
US5344524A (en) * 1993-06-30 1994-09-06 Honeywell Inc. SOI substrate fabrication
KR100333153B1 (ko) * 1993-09-07 2002-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
US7081938B1 (en) * 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
WO1995018463A1 (fr) * 1993-12-30 1995-07-06 Honeywell Inc. Silicium monocristallin sur un substrat en quartz
US5479048A (en) * 1994-02-04 1995-12-26 Analog Devices, Inc. Integrated circuit chip supported by a handle wafer and provided with means to maintain the handle wafer potential at a desired level
US6943764B1 (en) * 1994-04-22 2005-09-13 Semiconductor Energy Laboratory Co., Ltd. Driver circuit for an active matrix display device
JP3402400B2 (ja) 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
JPH07302912A (ja) * 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
US5536950A (en) * 1994-10-28 1996-07-16 Honeywell Inc. High resolution active matrix LCD cell design
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US6011291A (en) * 1997-02-21 2000-01-04 The United States Of America As Represented By The Secretary Of The Navy Video display with integrated control circuitry formed on a dielectric substrate
JP3116085B2 (ja) * 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
US6232142B1 (en) 1997-12-09 2001-05-15 Seiko Epson Corporation Semiconductor device and method for making the same, electro-optical device using the same and method for making the electro-optical device, and electronic apparatus using the electro-optical device
US5977253A (en) * 1998-03-02 1999-11-02 Occidental Chemical Corporation Phenolic thermosetting resins containing polyols
US6300241B1 (en) * 1998-08-19 2001-10-09 National Semiconductor Corporation Silicon interconnect passivation and metallization process optimized to maximize reflectance
US6909114B1 (en) * 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4076648B2 (ja) 1998-12-18 2008-04-16 株式会社半導体エネルギー研究所 半導体装置
JP4008133B2 (ja) * 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
JP4202502B2 (ja) 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US6331473B1 (en) * 1998-12-29 2001-12-18 Seiko Epson Corporation SOI substrate, method for making the same, semiconductive device and liquid crystal panel using the same
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US7113896B2 (en) * 2001-05-11 2006-09-26 Zhen Zhang System and methods for processing biological expression data
WO2004017381A2 (fr) * 2002-08-19 2004-02-26 The Trustees Of Columbia University In The City Of New York Procede et systeme de traitement par cristallisation laser de regions de couche mince sur un substrat pour la reduction des zones de bord, et structure de ces regions de couche mince
AU2003258289A1 (en) 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York A single-shot semiconductor processing system and method having various irradiation patterns
KR20060072097A (ko) * 2002-12-09 2006-06-27 픽셀리전트 테크놀로지스 엘엘씨 프로그램가능 리소그래피 마스크 및 나노 사이즈 반도체입자를 기반으로 한 가역성 광탈색재와 그 응용
US8993221B2 (en) 2012-02-10 2015-03-31 Pixelligent Technologies, Llc Block co-polymer photoresist
US7524616B2 (en) 2003-03-04 2009-04-28 Pixelligent Technologies Llc Applications of semiconductor nano-sized particles for photolithography
WO2005029546A2 (fr) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Procede et systeme de solidification laterale sequentielle en mouvement continu en vue de reduire ou d'eliminer les artefacts, et masque facilitant une telle reduction/elimination des artefacts
WO2005029549A2 (fr) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Procede et systeme de solidification laterale sequentielle par balayage unique et mouvement continu permettant une croissance bidirectionnelle des grains, et masque permettant cette croissance
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029551A2 (fr) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Procedes et systemes de traitement par cristallisation au laser de partie de films sur substrats utilisant un faisceau lineaire, et structure de ces parties
WO2005034193A2 (fr) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Irradiation a simple balayage de cristallisation de films minces
JP4540359B2 (ja) * 2004-02-10 2010-09-08 シャープ株式会社 半導体装置およびその製造方法
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
EP1927127A2 (fr) * 2005-08-16 2008-06-04 The Trustees of Columbia University in the City of New York Cristallisation de films minces a haut debit
US8598588B2 (en) 2005-12-05 2013-12-03 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
KR20090025389A (ko) * 2006-07-10 2009-03-10 픽셀리전트 테크놀로지스 엘엘씨 포토리소그래피용 레지스트
US7557002B2 (en) * 2006-08-18 2009-07-07 Micron Technology, Inc. Methods of forming transistor devices
CN101523581A (zh) * 2007-01-10 2009-09-02 夏普株式会社 半导体装置的制造方法、显示装置的制造方法、半导体装置、半导体元件的制造方法以及半导体元件
US7989322B2 (en) * 2007-02-07 2011-08-02 Micron Technology, Inc. Methods of forming transistors
US8614471B2 (en) * 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
US8415670B2 (en) * 2007-09-25 2013-04-09 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
US8557040B2 (en) * 2007-11-21 2013-10-15 The Trustees Of Columbia University In The City Of New York Systems and methods for preparation of epitaxially textured thick films
WO2009067688A1 (fr) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systèmes et procédés de préparation de films polycristallins texturés par épitaxie
WO2009111340A2 (fr) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Cristallisation de recuit par lampe flash pour films minces à large surface
JP2011515833A (ja) * 2008-02-29 2011-05-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄膜のためのフラッシュ光アニーリング
JP5478166B2 (ja) * 2008-09-11 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2010056990A1 (fr) 2008-11-14 2010-05-20 The Trustees Of Columbia University In The City Of New York Systèmes et procédés pour la cristallisation de films minces
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
EP2504059A4 (fr) * 2009-11-24 2014-01-22 Univ Columbia Systèmes et procédés pour solidification latérale séquentielle à impulsions non périodiques
CN103515445A (zh) * 2012-06-15 2014-01-15 北京大学 一种薄膜晶体管及其制备方法
KR102002858B1 (ko) 2012-08-10 2019-10-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication
US4024626A (en) * 1974-12-09 1977-05-24 Hughes Aircraft Company Method of making integrated transistor matrix for flat panel liquid crystal display
US3997381A (en) * 1975-01-10 1976-12-14 Intel Corporation Method of manufacture of an epitaxial semiconductor layer on an insulating substrate
JPS5598868A (en) * 1979-01-23 1980-07-28 Sumitomo Electric Ind Ltd Insulated gate type field effect semiconductor device
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
JPS5710266A (en) * 1980-06-23 1982-01-19 Fujitsu Ltd Mis field effect semiconductor device
US4372803A (en) * 1980-09-26 1983-02-08 The United States Of America As Represented By The Secretary Of The Navy Method for etch thinning silicon devices
JPS60213062A (ja) * 1984-04-09 1985-10-25 Hosiden Electronics Co Ltd 薄膜トランジスタの製造方法
FR2572219B1 (fr) * 1984-10-23 1987-05-29 Efcis Procede de fabrication de circuits integres sur substrat isolant
ATE77177T1 (de) * 1985-10-04 1992-06-15 Hosiden Corp Duennfilmtransistor und verfahren zu seiner herstellung.
JPH0777264B2 (ja) * 1986-04-02 1995-08-16 三菱電機株式会社 薄膜トランジスタの製造方法
DE3714164A1 (de) * 1986-04-30 1987-11-05 Sharp Kk Fluessigkristallanzeige
JPH0691252B2 (ja) * 1986-11-27 1994-11-14 日本電気株式会社 薄膜トランジスタアレイ
JPS63157476A (ja) * 1986-12-22 1988-06-30 Seiko Instr & Electronics Ltd 薄膜トランジスタ
DE3739372A1 (de) * 1987-11-20 1989-06-01 Sueddeutsche Kuehler Behr Klimaanlage
US4990981A (en) * 1988-01-29 1991-02-05 Hitachi, Ltd. Thin film transistor and a liquid crystal display device using same
US4826709A (en) * 1988-02-29 1989-05-02 American Telephone And Telegraph Company At&T Bell Laboratories Devices involving silicon glasses
JPH01274474A (ja) * 1988-04-26 1989-11-02 Seiko Instr Inc 半導体装置
JPH01295464A (ja) * 1988-05-24 1989-11-29 Sony Corp 薄膜トランジスタ
JPH02137272A (ja) * 1988-11-17 1990-05-25 Ricoh Co Ltd Ｃｍｏｓ型薄膜トランジスター
JPH02143463A (ja) * 1988-11-24 1990-06-01 Ricoh Co Ltd 薄膜トランジスター
JPH0388321A (ja) * 1989-08-31 1991-04-12 Tonen Corp 多結晶シリコン薄膜
US5110748A (en) * 1991-03-28 1992-05-05 Honeywell Inc. Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display

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FI921312L (fi) 1992-09-29
FI921312A7 (fi) 1992-09-29
DE69209126D1 (de) 1996-04-25
JP3314345B2 (ja) 2002-08-12
EP0510368B1 (fr) 1996-03-20
DK0510368T3 (da) 1996-07-29
IL101218A (en) 1994-02-27
KR100201715B1 (ko) 1999-06-15
JPH05136170A (ja) 1993-06-01
NO921094D0 (no) 1992-03-19
CA2061796C (fr) 2002-12-24
EP0510368A1 (fr) 1992-10-28
KR920018978A (ko) 1992-10-22
FI921312A0 (fi) 1992-03-26
US5281840A (en) 1994-01-25
CA2061796A1 (fr) 1992-09-29
DE69209126T2 (de) 1996-09-19
IL101218A0 (en) 1992-11-15

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