OA13236A - Method for the preparation of Group IB-IIIA-VIA Quaternary or higher alloy semiconductor films. - Google Patents

Method for the preparation of Group IB-IIIA-VIA Quaternary or higher alloy semiconductor films. Download PDF

Info

Publication number: OA13236A
Authority: OA; OAPI
Prior art keywords: film; group; alloy; mixture; iiia
Prior art date: 2003-08-14

Application number

OA1200600050A

Other languages

English (en)

Inventor

Vivian Alberts

Original Assignee

Univ Johannesburg

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2003-08-14

Filing date

2004-08-13

Publication date

2006-12-13

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34198392&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=OA13236(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

2004-08-13 Application filed by Univ Johannesburg filed Critical Univ Johannesburg

2006-12-13 Publication of OA13236A publication Critical patent/OA13236A/en

Links

229910045601 alloy Inorganic materials 0.000 title claims abstract description 236
239000000956 alloy Substances 0.000 title claims abstract description 236
238000000034 method Methods 0.000 title claims abstract description 150
239000004065 semiconductor Substances 0.000 title claims abstract description 90
238000002360 preparation method Methods 0.000 title description 8
229910052751 metal Inorganic materials 0.000 claims abstract description 92
239000002184 metal Substances 0.000 claims abstract description 92
239000000203 mixture Substances 0.000 claims abstract description 91
229910002058 ternary alloy Inorganic materials 0.000 claims abstract description 59
229910002056 binary alloy Inorganic materials 0.000 claims abstract description 37
238000004519 manufacturing process Methods 0.000 claims abstract description 21
150000002739 metals Chemical class 0.000 claims abstract description 13
238000006243 chemical reaction Methods 0.000 claims description 89
229910002059 quaternary alloy Inorganic materials 0.000 claims description 62
229910052717 sulfur Inorganic materials 0.000 claims description 60
238000010438 heat treatment Methods 0.000 claims description 47
239000000758 substrate Substances 0.000 claims description 47
229910052802 copper Inorganic materials 0.000 claims description 42
229910052738 indium Inorganic materials 0.000 claims description 38
239000011261 inert gas Substances 0.000 claims description 35
238000000137 annealing Methods 0.000 claims description 34
229910052733 gallium Inorganic materials 0.000 claims description 29
SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 claims description 23
229910000058 selane Inorganic materials 0.000 claims description 23
239000008246 gaseous mixture Substances 0.000 claims description 19
BKQMNPVDJIHLPD-UHFFFAOYSA-N OS(=O)(=O)[Se]S(O)(=O)=O Chemical class OS(=O)(=O)[Se]S(O)(=O)=O BKQMNPVDJIHLPD-UHFFFAOYSA-N 0.000 claims description 8
229910000807 Ga alloy Inorganic materials 0.000 claims description 5
229910052786 argon Inorganic materials 0.000 claims description 4
229910002065 alloy metal Inorganic materials 0.000 claims 2
229910021476 group 6 element Inorganic materials 0.000 abstract description 2
239000010408 film Substances 0.000 description 221
239000010949 copper Substances 0.000 description 101
239000011669 selenium Substances 0.000 description 95
238000002441 X-ray diffraction Methods 0.000 description 41
239000010410 layer Substances 0.000 description 30
229910052711 selenium Inorganic materials 0.000 description 19
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 17
238000001341 grazing-angle X-ray diffraction Methods 0.000 description 17
230000015572 biosynthetic process Effects 0.000 description 15
239000011593 sulfur Substances 0.000 description 15
239000000463 material Substances 0.000 description 14
239000007789 gas Substances 0.000 description 13
238000010348 incorporation Methods 0.000 description 12
238000002474 experimental method Methods 0.000 description 11
239000013078 crystal Substances 0.000 description 10
238000005259 measurement Methods 0.000 description 9
230000005855 radiation Effects 0.000 description 9
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
238000000151 deposition Methods 0.000 description 8
230000008021 deposition Effects 0.000 description 8
239000002243 precursor Substances 0.000 description 8
230000008569 process Effects 0.000 description 8
241000894007 species Species 0.000 description 8
238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 7
229910052750 molybdenum Inorganic materials 0.000 description 7
238000004544 sputter deposition Methods 0.000 description 7
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
239000006096 absorbing agent Substances 0.000 description 5
238000001755 magnetron sputter deposition Methods 0.000 description 5
239000011733 molybdenum Substances 0.000 description 5
239000000126 substance Substances 0.000 description 5
238000005987 sulfurization reaction Methods 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 4
229910052796 boron Inorganic materials 0.000 description 4
229910052799 carbon Inorganic materials 0.000 description 4
230000001419 dependent effect Effects 0.000 description 4
238000009792 diffusion process Methods 0.000 description 4
238000005530 etching Methods 0.000 description 4
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
238000001878 scanning electron micrograph Methods 0.000 description 4
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
229910002483 Cu Ka Inorganic materials 0.000 description 3
ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 3
239000002131 composite material Substances 0.000 description 3
239000011521 glass Substances 0.000 description 3
230000000737 periodic effect Effects 0.000 description 3
238000001228 spectrum Methods 0.000 description 3
239000010409 thin film Substances 0.000 description 3
239000002341 toxic gas Substances 0.000 description 3
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
239000005864 Sulphur Substances 0.000 description 2
-1 argon ion Chemical class 0.000 description 2
238000012512 characterization method Methods 0.000 description 2
238000010549 co-Evaporation Methods 0.000 description 2
230000003247 decreasing effect Effects 0.000 description 2
239000011888 foil Substances 0.000 description 2
229910002804 graphite Inorganic materials 0.000 description 2
239000010439 graphite Substances 0.000 description 2
238000002156 mixing Methods 0.000 description 2
230000035515 penetration Effects 0.000 description 2
229920000642 polymer Polymers 0.000 description 2
239000012495 reaction gas Substances 0.000 description 2
230000004044 response Effects 0.000 description 2
239000002344 surface layer Substances 0.000 description 2
230000007704 transition Effects 0.000 description 2
238000004876 x-ray fluorescence Methods 0.000 description 2
229910018089 Al Ka Inorganic materials 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
229910000846 In alloy Inorganic materials 0.000 description 1
229910052776 Thorium Inorganic materials 0.000 description 1
MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 1
239000004411 aluminium Substances 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
230000002547 anomalous effect Effects 0.000 description 1
238000013459 approach Methods 0.000 description 1
239000013590 bulk material Substances 0.000 description 1
230000008859 change Effects 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
239000011651 chromium Substances 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000001816 cooling Methods 0.000 description 1
HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
229910021419 crystalline silicon Inorganic materials 0.000 description 1
230000002950 deficient Effects 0.000 description 1
239000008367 deionised water Substances 0.000 description 1
238000005137 deposition process Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000004070 electrodeposition Methods 0.000 description 1
238000005566 electron beam evaporation Methods 0.000 description 1
230000004907 flux Effects 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
235000003642 hunger Nutrition 0.000 description 1
238000011065 in-situ storage Methods 0.000 description 1
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
238000005457 optimization Methods 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
238000004838 photoelectron emission spectroscopy Methods 0.000 description 1
229910052699 polonium Inorganic materials 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
238000012545 processing Methods 0.000 description 1
239000010453 quartz Substances 0.000 description 1
230000035484 reaction time Effects 0.000 description 1
238000011160 research Methods 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000000344 soap Substances 0.000 description 1
239000008149 soap solution Substances 0.000 description 1
239000005361 soda-lime glass Substances 0.000 description 1
239000007787 solid Substances 0.000 description 1
230000003595 spectral effect Effects 0.000 description 1
230000007847 structural defect Effects 0.000 description 1
229910052714 tellurium Inorganic materials 0.000 description 1
229910002070 thin film alloy Inorganic materials 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physical Vapour Deposition (AREA)
Photovoltaic Devices (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Chemical Vapour Deposition (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Electrodes Of Semiconductors (AREA)
Analysing Materials By The Use Of Radiation (AREA)
Particle Accelerators (AREA)

OA1200600050A 2003-08-14 2004-08-13 Method for the preparation of Group IB-IIIA-VIA Quaternary or higher alloy semiconductor films. OA13236A (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
ZA200306316		2003-08-14
ZA200402497		2004-03-30

Publications (1)

Publication Number	Publication Date
OA13236A true OA13236A (en)	2006-12-13

Family

ID=34198392

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
OA1200600050A OA13236A (en)	2003-08-14	2004-08-13	Method for the preparation of Group IB-IIIA-VIA Quaternary or higher alloy semiconductor films.
OA1200600051A OA13237A (en)	2003-08-14	2004-08-13	Group I-III-VI Quaternary or higher alloy semiconductor films.

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
OA1200600051A OA13237A (en)	2003-08-14	2004-08-13	Group I-III-VI Quaternary or higher alloy semiconductor films.

Country Status (19)

Country	Link
US (3)	US7682939B2 (de)
EP (3)	EP1654769B2 (de)
JP (2)	JP4994032B2 (de)
KR (2)	KR101004452B1 (de)
AP (2)	AP2180A (de)
AT (1)	ATE510304T2 (de)
AU (2)	AU2004301075B2 (de)
BR (2)	BRPI0413567A (de)
CA (2)	CA2535703C (de)
CY (1)	CY1111940T1 (de)
DE (1)	DE202004021800U1 (de)
DK (1)	DK1654769T4 (de)
EA (2)	EA010171B1 (de)
EG (1)	EG25410A (de)
ES (1)	ES2366888T5 (de)
IL (2)	IL173694A0 (de)
MX (2)	MXPA06001726A (de)
OA (2)	OA13236A (de)
WO (2)	WO2005017978A2 (de)

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Publication number	Publication date
BRPI0413572A (pt)	2006-10-17
EA200600406A1 (ru)	2006-08-25
US20070004078A1 (en)	2007-01-04
MXPA06001723A (es)	2007-04-25
US8735214B2 (en)	2014-05-27
JP2007502247A (ja)	2007-02-08
AP2006003507A0 (en)	2006-02-28
JP2007503708A (ja)	2007-02-22
EA009012B1 (ru)	2007-10-26
CY1111940T1 (el)	2015-11-04
US20060222558A1 (en)	2006-10-05
WO2005017978A3 (en)	2005-10-13
KR101027318B1 (ko)	2011-04-06
US7744705B2 (en)	2010-06-29
AP2149A (en)	2010-09-01
AU2004301076A1 (en)	2005-02-24
EA200600407A1 (ru)	2006-08-25
ES2366888T5 (es)	2018-05-17
JP4994032B2 (ja)	2012-08-08
CA2535703A1 (en)	2005-02-24
KR101004452B1 (ko)	2010-12-28
AP2180A (en)	2010-11-29
CA2539556A1 (en)	2005-02-24
EP1654769B2 (de)	2018-02-07
AU2004301075B2 (en)	2009-10-08
ES2366888T3 (es)	2011-10-26
KR20060082075A (ko)	2006-07-14
CA2539556C (en)	2010-10-26
HK1097105A1 (zh)	2007-06-15
AP2006003508A0 (en)	2006-02-28
EP1654751A2 (de)	2006-05-10
EA010171B1 (ru)	2008-06-30
IL173693A0 (en)	2006-07-05
MXPA06001726A (es)	2007-05-04
AU2004301076B2 (en)	2009-11-05
AU2004301075A1 (en)	2005-02-24
KR20060058717A (ko)	2006-05-30
EG25410A (en)	2012-01-02
WO2005017979A3 (en)	2006-06-01
OA13237A (en)	2006-12-13
DE202004021800U1 (de)	2011-04-21
BRPI0413567A (pt)	2006-10-17
DK1654769T4 (en)	2018-05-22
DK1654769T3 (da)	2011-09-12
JP4864705B2 (ja)	2012-02-01
IL173693A (en)	2014-01-30
EP1654769B1 (de)	2011-05-18
CA2535703C (en)	2011-04-19
WO2005017978A2 (en)	2005-02-24
EP1654769A2 (de)	2006-05-10
US7682939B2 (en)	2010-03-23
ATE510304T2 (de)	2011-06-15
US20100190292A1 (en)	2010-07-29
EP2284905A2 (de)	2011-02-16
WO2005017979A2 (en)	2005-02-24
IL173694A0 (en)	2006-07-05

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