PL414208A1 - A method of chemical decapsulation of electronic components in SOT, VTLA, QFP and QFN enclosures - Google Patents

A method of chemical decapsulation of electronic components in SOT, VTLA, QFP and QFN enclosures

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Publication number
PL414208A1
PL414208A1 PL414208A PL41420815A PL414208A1 PL 414208 A1 PL414208 A1 PL 414208A1 PL 414208 A PL414208 A PL 414208A PL 41420815 A PL41420815 A PL 41420815A PL 414208 A1 PL414208 A1 PL 414208A1
Authority
PL
Poland
Prior art keywords
vtla
qfn
qfp
sot
electronic components
Prior art date
Application number
PL414208A
Other languages
Polish (pl)
Other versions
PL229725B1 (en
Inventor
Kamil Janeczek
Aneta Araźna
Krzysztof Lipiec
Original Assignee
Instytut Tele- I Radiotechniczny
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Tele- I Radiotechniczny filed Critical Instytut Tele- I Radiotechniczny
Priority to PL414208A priority Critical patent/PL229725B1/en
Publication of PL414208A1 publication Critical patent/PL414208A1/en
Publication of PL229725B1 publication Critical patent/PL229725B1/en

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Abstract

Sposób chemicznej dekapsulacji podzespołów elektronicznych typu SOT, VTLA, QFP i QFN polega na tym, że proces prowadzi się w dwóch etapach. W pierwszym etapie podzespół elektroniczny trawi się w mieszaninie kwasu siarkowego i wody utlenionej (30%) w proporcji 20 : 1 lub 10 : 1, w czasie od 30 sekund do 1 minuty w temperaturze od 120 do 150°C. W drugim etapie podzespół elektroniczny płucze się w roztworze acetonu, zawierającym dodatek tolytriazolu jako inhibitora korozji o stężeniu 5 mg/dm3 acetonu. Oba procesy prowadzi się naprzemiennie, aż do odsłonięcia badanych elementów wewnętrznych podzespołu.The method of chemical decapsulation of electronic components such as SOT, VTLA, QFP and QFN is based on the fact that the process is carried out in two stages. In the first stage, the electronic component is digested in a mixture of sulfuric acid and hydrogen peroxide (30%) in a ratio of 20: 1 or 10: 1, for 30 seconds to 1 minute at a temperature of 120 to 150 ° C. In the second stage, the electronic component is rinsed in an acetone solution containing tolytriazole as a corrosion inhibitor at a concentration of 5 mg / dm3 of acetone. Both processes are carried out alternately until the internal components tested are exposed.

PL414208A 2015-09-29 2015-09-29 Method for chemical decapsulation of electronic components in SOT, VTLA, QFP and QFN casings PL229725B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL414208A PL229725B1 (en) 2015-09-29 2015-09-29 Method for chemical decapsulation of electronic components in SOT, VTLA, QFP and QFN casings

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL414208A PL229725B1 (en) 2015-09-29 2015-09-29 Method for chemical decapsulation of electronic components in SOT, VTLA, QFP and QFN casings

Publications (2)

Publication Number Publication Date
PL414208A1 true PL414208A1 (en) 2017-04-10
PL229725B1 PL229725B1 (en) 2018-08-31

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ID=58463588

Family Applications (1)

Application Number Title Priority Date Filing Date
PL414208A PL229725B1 (en) 2015-09-29 2015-09-29 Method for chemical decapsulation of electronic components in SOT, VTLA, QFP and QFN casings

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PL (1) PL229725B1 (en)

Also Published As

Publication number Publication date
PL229725B1 (en) 2018-08-31

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