SE0200137L - Tillverkningsmetod, varaktor samt integrerad krets - Google Patents

Tillverkningsmetod, varaktor samt integrerad krets

Info

Publication number
SE0200137L
SE0200137L SE0200137A SE0200137A SE0200137L SE 0200137 L SE0200137 L SE 0200137L SE 0200137 A SE0200137 A SE 0200137A SE 0200137 A SE0200137 A SE 0200137A SE 0200137 L SE0200137 L SE 0200137L
Authority
SE
Sweden
Prior art keywords
sup
doped region
forming
doped
region
Prior art date
Application number
SE0200137A
Other languages
Unknown language ( )
English (en)
Other versions
SE0200137D0 (sv
Inventor
Ted Johansson
Hans Norstroem
Stefan Sahl
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE0200137A priority Critical patent/SE0200137L/sv
Publication of SE0200137D0 publication Critical patent/SE0200137D0/sv
Priority to TW091105579A priority patent/TW586212B/zh
Priority to DE10392200T priority patent/DE10392200B4/de
Priority to PCT/SE2003/000048 priority patent/WO2003063255A1/en
Publication of SE0200137L publication Critical patent/SE0200137L/sv
Priority to US10/873,781 priority patent/US7025615B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
SE0200137A 2002-01-18 2002-01-18 Tillverkningsmetod, varaktor samt integrerad krets SE0200137L (sv)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE0200137A SE0200137L (sv) 2002-01-18 2002-01-18 Tillverkningsmetod, varaktor samt integrerad krets
TW091105579A TW586212B (en) 2002-01-18 2002-03-22 Fabrication method, varactor, and integrated circuit
DE10392200T DE10392200B4 (de) 2002-01-18 2003-01-15 Herstellungsverfahren und Varaktor
PCT/SE2003/000048 WO2003063255A1 (en) 2002-01-18 2003-01-15 Fabrication method, varactor, and integrated circuit
US10/873,781 US7025615B2 (en) 2002-01-18 2004-06-22 Fabrication method, varactor, and integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0200137A SE0200137L (sv) 2002-01-18 2002-01-18 Tillverkningsmetod, varaktor samt integrerad krets

Publications (2)

Publication Number Publication Date
SE0200137D0 SE0200137D0 (sv) 2002-01-18
SE0200137L true SE0200137L (sv) 2003-07-19

Family

ID=20286696

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0200137A SE0200137L (sv) 2002-01-18 2002-01-18 Tillverkningsmetod, varaktor samt integrerad krets

Country Status (5)

Country Link
US (1) US7025615B2 (sv)
DE (1) DE10392200B4 (sv)
SE (1) SE0200137L (sv)
TW (1) TW586212B (sv)
WO (1) WO2003063255A1 (sv)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521506B1 (en) * 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies
KR100673896B1 (ko) * 2004-07-30 2007-01-26 주식회사 하이닉스반도체 트렌치 구조의 소자분리막을 갖는 반도체소자 및 그 제조방법
US7518215B2 (en) 2005-01-06 2009-04-14 International Business Machines Corporation One mask hyperabrupt junction varactor using a compensated cathode contact
DE102006046727B4 (de) * 2006-10-02 2010-02-18 Infineon Technologies Ag Verfahren zur Herstellung einer Halbleiterstruktur mit einem Varaktor und einem Hochfrequenztransistor
US7449389B2 (en) 2006-10-27 2008-11-11 Infineon Technologies Ag Method for fabricating a semiconductor structure
US7692271B2 (en) 2007-02-28 2010-04-06 International Business Machines Corporation Differential junction varactor
US8053866B2 (en) * 2009-08-06 2011-11-08 Freescale Semiconductor, Inc. Varactor structures
DE102018213633B9 (de) * 2018-08-13 2025-01-09 Infineon Technologies Ag Halbleitervorrichtung
FR3143853A1 (fr) * 2022-12-14 2024-06-21 Stmicroelectronics (Crolles 2) Sas Diode à capacité variable

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4106953A (en) * 1976-12-28 1978-08-15 Motorola, Inc. Method of producing an ion implanted tuning diode
JPS5529169A (en) * 1978-08-23 1980-03-01 Mitsubishi Electric Corp Variable capacity diode and manufacturing thereof
US4987459A (en) * 1989-01-19 1991-01-22 Toko, Inc. Variable capacitance diode element having wide capacitance variation range
US5405790A (en) * 1993-11-23 1995-04-11 Motorola, Inc. Method of forming a semiconductor structure having MOS, bipolar, and varactor devices
JP2755135B2 (ja) * 1993-11-25 1998-05-20 日本電気株式会社 可変容量装置および該可変容量装置を有する半導体集積回路装置
US5477197A (en) 1994-10-24 1995-12-19 At&T Corp. Voltage controlled oscillator with improved voltage versus frequency characteristic
JP5172060B2 (ja) * 1999-09-17 2013-03-27 インフィネオン テクノロジーズ アクチェンゲゼルシャフト 半導体装置の隔離のため浅いトレンチ内に深いトレンチを形成するための自己整合方法
EP1137055A1 (de) * 2000-03-24 2001-09-26 Infineon Technologies AG Verfahren zur Herstellung einer Hochfrequenz-Halbleiterstruktur und Hochfrequenz-Halbleiterstruktur
EP1139434A3 (en) * 2000-03-29 2003-12-10 Tyco Electronics Corporation Variable capacity diode with hyperabrubt junction profile
US6559024B1 (en) * 2000-03-29 2003-05-06 Tyco Electronics Corporation Method of fabricating a variable capacity diode having a hyperabrupt junction profile
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same

Also Published As

Publication number Publication date
US20040235257A1 (en) 2004-11-25
SE0200137D0 (sv) 2002-01-18
WO2003063255A1 (en) 2003-07-31
DE10392200B4 (de) 2009-01-22
TW586212B (en) 2004-05-01
US7025615B2 (en) 2006-04-11
DE10392200T5 (de) 2005-01-05

Similar Documents

Publication Publication Date Title
US20100051946A1 (en) Poly-emitter type bipolar junction transistor, bipolar cmos dmos device, and manufacturing methods of poly-emitter type bipolar junction transistor and bipolar cmos dmos device
KR19980057037A (ko) 반도체소자의 삼중웰 제조방법
JP2001127292A5 (sv)
US9613804B2 (en) Method of manufacturing semiconductor devices which allows reproducible thinning of a semiconductor body of the semiconductor devices
KR910003809A (ko) 반도체장치 및 그 제조방법
WO2004003970A3 (en) A semiconductor device and method of fabricating a semiconductor device
SE0200137L (sv) Tillverkningsmetod, varaktor samt integrerad krets
KR910009034B1 (ko) 반도체장치의 제조방법
US10522663B2 (en) Integrated JFET structure with implanted backgate
KR20010016838A (ko) 모스 트랜지스터의 불순물 주입영역 형성 방법
JP2797798B2 (ja) 突き抜け防止のための埋込コンタクトを有する半導体装置とその製造方法
US7060547B2 (en) Method for forming a junction region of a semiconductor device
US20240113102A1 (en) Buried trench capacitor
US7642154B2 (en) BiCMOS device and method of manufacturing a biCMOS device
US6140196A (en) Method of fabricating high power bipolar junction transistor
TW356559B (en) Method for fabricating semiconductor devices having triple well
US20060220179A1 (en) Method for forming an improved isolation junction in high voltage LDMOS structures
KR970018259A (ko) 반도체 소자의 트랜지스터 제조방법
KR100575622B1 (ko) 반도체 장치의 제조 방법
KR940005739B1 (ko) 기준전압발생용 다이오드 및 그 제조방법
KR0138310B1 (ko) 바이폴라 트랜지스터의 제조방법
KR950008260B1 (ko) 엘디디 엔채널 모스 트랜지스터의 제조방법
KR100434955B1 (ko) 반도체 소자의 ｃｍｏｓ 및 그 제조 방법
JPH0727916B2 (ja) 半導体デバイス製造方法
KR940012670A (ko) 엔(n)-채널 반도체소자 제조방법

Legal Events

Date Code Title Description
NAV Patent application has lapsed