SE425826B - Metod for jonimplantation - Google Patents

Metod for jonimplantation

Info

Publication number
SE425826B
SE425826B SE7800954A SE7800954A SE425826B SE 425826 B SE425826 B SE 425826B SE 7800954 A SE7800954 A SE 7800954A SE 7800954 A SE7800954 A SE 7800954A SE 425826 B SE425826 B SE 425826B
Authority
SE
Sweden
Prior art keywords
openings
fracture
area
microcircuit
fracture surface
Prior art date
Application number
SE7800954A
Other languages
English (en)
Swedish (sv)
Other versions
SE7800954L (sv
Inventor
H S Rupprecht
R O Schwenker
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SE7800954L publication Critical patent/SE7800954L/xx
Publication of SE425826B publication Critical patent/SE425826B/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

Landscapes

  • Bipolar Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electron Beam Exposure (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dicing (AREA)
  • Element Separation (AREA)
SE7800954A 1977-01-31 1978-01-26 Metod for jonimplantation SE425826B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/763,789 US4076558A (en) 1977-01-31 1977-01-31 Method of high current ion implantation and charge reduction by simultaneous kerf implant

Publications (2)

Publication Number Publication Date
SE7800954L SE7800954L (sv) 1978-08-01
SE425826B true SE425826B (sv) 1982-11-08

Family

ID=25068815

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7800954A SE425826B (sv) 1977-01-31 1978-01-26 Metod for jonimplantation

Country Status (12)

Country Link
US (1) US4076558A (de)
JP (1) JPS5910576B2 (de)
BE (1) BE862557A (de)
CA (1) CA1043474A (de)
CH (1) CH632105A5 (de)
DE (1) DE2801271C2 (de)
ES (1) ES466448A1 (de)
FR (1) FR2379163A1 (de)
GB (1) GB1549971A (de)
IT (1) IT1114183B (de)
NL (1) NL7800851A (de)
SE (1) SE425826B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839376B2 (ja) * 1978-10-30 1983-08-30 富士通株式会社 イオン注入法
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
US4463255A (en) * 1980-09-24 1984-07-31 Varian Associates, Inc. Apparatus for enhanced neutralization of positively charged ion beam
US4453086A (en) * 1981-12-31 1984-06-05 International Business Machines Corporation Electron beam system with reduced charge buildup
JPS60198721A (ja) * 1984-03-22 1985-10-08 Fujitsu Ltd 半導体装置の製造方法
US5136171A (en) * 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507709A (en) * 1967-09-15 1970-04-21 Hughes Aircraft Co Method of irradiating dielectriccoated semiconductor bodies with low energy electrons
NL154061B (nl) * 1967-11-04 1977-07-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
US3701696A (en) * 1969-08-20 1972-10-31 Gen Electric Process for simultaneously gettering,passivating and locating a junction within a silicon crystal
JPS4819113B1 (de) * 1969-08-27 1973-06-11
US3728161A (en) * 1971-12-28 1973-04-17 Bell Telephone Labor Inc Integrated circuits with ion implanted chan stops
US3790412A (en) * 1972-04-07 1974-02-05 Bell Telephone Labor Inc Method of reducing the effects of particle impingement on shadow masks
JPS49118367A (de) * 1973-03-12 1974-11-12

Also Published As

Publication number Publication date
IT1114183B (it) 1986-01-27
US4076558A (en) 1978-02-28
DE2801271C2 (de) 1988-01-21
ES466448A1 (es) 1978-10-16
FR2379163B1 (de) 1980-12-19
BE862557A (fr) 1978-04-14
DE2801271A1 (de) 1978-08-03
CH632105A5 (de) 1982-09-15
JPS5396665A (en) 1978-08-24
CA1043474A (en) 1978-11-28
FR2379163A1 (fr) 1978-08-25
GB1549971A (en) 1979-08-08
NL7800851A (nl) 1978-08-02
JPS5910576B2 (ja) 1984-03-09
SE7800954L (sv) 1978-08-01

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