SE449221B - Forfarande for framstellning av kiselnitrid genom omsettning av kiseldioxid, kol och kveve vid en temperatur over 1300?59oc - Google Patents
Forfarande for framstellning av kiselnitrid genom omsettning av kiseldioxid, kol och kveve vid en temperatur over 1300?59ocInfo
- Publication number
- SE449221B SE449221B SE8302207A SE8302207A SE449221B SE 449221 B SE449221 B SE 449221B SE 8302207 A SE8302207 A SE 8302207A SE 8302207 A SE8302207 A SE 8302207A SE 449221 B SE449221 B SE 449221B
- Authority
- SE
- Sweden
- Prior art keywords
- temperature
- silica
- nitrogen
- reaction
- pressure
- Prior art date
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 17
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 37
- 239000000377 silicon dioxide Substances 0.000 title claims description 17
- 235000012239 silicon dioxide Nutrition 0.000 title description 5
- 239000003245 coal Substances 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- -1 silica nitride Chemical class 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000007306 turnover Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0685—Preparation by carboreductive nitridation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8302207A SE449221B (sv) | 1983-04-19 | 1983-04-19 | Forfarande for framstellning av kiselnitrid genom omsettning av kiseldioxid, kol och kveve vid en temperatur over 1300?59oc |
| AT84850097T ATE34370T1 (de) | 1983-04-19 | 1984-03-26 | Verfahren zur herstellung von siliziumnitrid. |
| EP84850097A EP0122897B1 (de) | 1983-04-19 | 1984-03-26 | Verfahren zur Herstellung von Siliziumnitrid |
| DE8484850097T DE3471292D1 (en) | 1983-04-19 | 1984-03-26 | A process for the production of silicon nitride |
| US06/599,702 US4530825A (en) | 1983-04-19 | 1984-04-12 | Process for the production of silicon nitride |
| JP59076759A JPS59199515A (ja) | 1983-04-19 | 1984-04-18 | 窒化ケイ素の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE8302207A SE449221B (sv) | 1983-04-19 | 1983-04-19 | Forfarande for framstellning av kiselnitrid genom omsettning av kiseldioxid, kol och kveve vid en temperatur over 1300?59oc |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE8302207D0 SE8302207D0 (sv) | 1983-04-19 |
| SE8302207L SE8302207L (sv) | 1984-10-20 |
| SE449221B true SE449221B (sv) | 1987-04-13 |
Family
ID=20350885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8302207A SE449221B (sv) | 1983-04-19 | 1983-04-19 | Forfarande for framstellning av kiselnitrid genom omsettning av kiseldioxid, kol och kveve vid en temperatur over 1300?59oc |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4530825A (de) |
| EP (1) | EP0122897B1 (de) |
| JP (1) | JPS59199515A (de) |
| AT (1) | ATE34370T1 (de) |
| DE (1) | DE3471292D1 (de) |
| SE (1) | SE449221B (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60235706A (ja) * | 1984-05-09 | 1985-11-22 | Central Glass Co Ltd | シリコン系セラミツクス粉末の連続製造方法 |
| JPS6112915A (ja) * | 1984-06-25 | 1986-01-21 | Tokushu Muki Zairyo Kenkyusho | 実質的にＳｉ，Ｎ及びＯからなる連続無機繊維とその製造法 |
| US4582696A (en) * | 1985-04-15 | 1986-04-15 | Ford Motor Company | Method of making a special purity silicon nitride powder |
| JPS61295212A (ja) * | 1985-06-24 | 1986-12-26 | Kawasaki Steel Corp | 窒化けい素粉末の製造方法 |
| US5219537A (en) * | 1990-04-03 | 1993-06-15 | Phillips Petroleum Company | Production of nitride products |
| US5160719A (en) * | 1990-07-24 | 1992-11-03 | Eaton Corporation | Process for nitriding silicon containing materials |
| US5250278A (en) * | 1991-06-19 | 1993-10-05 | Phillips Petroleum Company | Method for producing a ceramic product |
| US6007789A (en) * | 1992-11-03 | 1999-12-28 | Eaton Corporation | Method of nitriding silicon |
| ATE241576T1 (de) * | 1995-03-31 | 2003-06-15 | Hyperion Catalysis Int | Carbid-nanofibrillen und verfahren zum herstellen derselben |
| US5814290A (en) * | 1995-07-24 | 1998-09-29 | Hyperion Catalysis International | Silicon nitride nanowhiskers and method of making same |
| DE102010009502A1 (de) * | 2010-02-26 | 2011-09-01 | Spawnt Private S.À.R.L. | Verfahren zur Herstellung von Harnstoff |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1054901A (en) * | 1909-11-23 | 1913-03-04 | Basf Ag | Compounds containing silicon and nitrogen and process of producing such compounds. |
| US3855395A (en) * | 1972-09-06 | 1974-12-17 | Univ Utah | Production of silicon nitride from rice hulls |
| GB1470171A (en) * | 1974-07-31 | 1977-04-14 | Lucas Industries Ltd | Method of producing silicon nitride |
| JPS5238500A (en) * | 1975-09-22 | 1977-03-25 | Toshiba Corp | Production of alpha-silicon nitride powder |
| JPS53102300A (en) * | 1977-02-18 | 1978-09-06 | Toshiba Corp | Preparation of type silicon nitride powders |
| JPS55113603A (en) * | 1979-02-19 | 1980-09-02 | Toshiba Corp | Manufacture of alpha silicon nitride powder |
| JPS583964A (ja) * | 1981-06-30 | 1983-01-10 | Mitsubishi Heavy Ind Ltd | 金属溶射が可能な絶縁層の形成方法 |
| DE3266050D1 (en) * | 1981-10-12 | 1985-10-10 | Sumitomo Electric Industries | Method for sintering silicon nitride |
-
1983
- 1983-04-19 SE SE8302207A patent/SE449221B/sv not_active IP Right Cessation
-
1984
- 1984-03-26 DE DE8484850097T patent/DE3471292D1/de not_active Expired
- 1984-03-26 EP EP84850097A patent/EP0122897B1/de not_active Expired
- 1984-03-26 AT AT84850097T patent/ATE34370T1/de not_active IP Right Cessation
- 1984-04-12 US US06/599,702 patent/US4530825A/en not_active Expired - Fee Related
- 1984-04-18 JP JP59076759A patent/JPS59199515A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| ATE34370T1 (de) | 1988-06-15 |
| EP0122897A2 (de) | 1984-10-24 |
| EP0122897B1 (de) | 1988-05-18 |
| JPS59199515A (ja) | 1984-11-12 |
| EP0122897A3 (en) | 1985-08-14 |
| US4530825A (en) | 1985-07-23 |
| SE8302207L (sv) | 1984-10-20 |
| JPH0375484B2 (de) | 1991-12-02 |
| SE8302207D0 (sv) | 1983-04-19 |
| DE3471292D1 (en) | 1988-06-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
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