SE8007492L - Felteffekttransistor av mos-typ - Google Patents

Felteffekttransistor av mos-typ

Info

Publication number
SE8007492L
SE8007492L SE8007492A SE8007492A SE8007492L SE 8007492 L SE8007492 L SE 8007492L SE 8007492 A SE8007492 A SE 8007492A SE 8007492 A SE8007492 A SE 8007492A SE 8007492 L SE8007492 L SE 8007492L
Authority
SE
Sweden
Prior art keywords
field effect
effect transistor
type field
mos type
body region
Prior art date
Application number
SE8007492A
Other languages
Unknown language ( )
English (en)
Inventor
L A Goodman
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE8007492L publication Critical patent/SE8007492L/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
SE8007492A 1979-10-30 1980-10-24 Felteffekttransistor av mos-typ SE8007492L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8931579A 1979-10-30 1979-10-30

Publications (1)

Publication Number Publication Date
SE8007492L true SE8007492L (sv) 1981-05-01

Family

ID=22216966

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8007492A SE8007492L (sv) 1979-10-30 1980-10-24 Felteffekttransistor av mos-typ

Country Status (7)

Country Link
JP (1) JPS5673472A (sv)
DE (1) DE3039803A1 (sv)
FR (1) FR2469003A1 (sv)
GB (1) GB2062349A (sv)
IT (1) IT1133869B (sv)
SE (1) SE8007492L (sv)
YU (1) YU278180A (sv)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153368A (ja) * 1982-03-09 1983-09-12 Toshiba Corp 絶縁ゲ−ト型電界効果トランジスタ
JPS5998557A (ja) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Ｍｏｓトランジスタ
US4803532A (en) * 1982-11-27 1989-02-07 Nissan Motor Co., Ltd. Vertical MOSFET having a proof structure against puncture due to breakdown
US4567644A (en) * 1982-12-20 1986-02-04 Signetics Corporation Method of making triple diffused ISL structure
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
DE3465225D1 (en) * 1983-02-17 1987-09-10 Nissan Motor A vertical-type mosfet and method of fabricating the same
US4743952A (en) * 1983-04-04 1988-05-10 General Electric Company Insulated-gate semiconductor device with low on-resistance
CA1216968A (en) * 1983-09-06 1987-01-20 Victor A.K. Temple Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short
US4837606A (en) * 1984-02-22 1989-06-06 General Electric Company Vertical MOSFET with reduced bipolar effects
US4587713A (en) * 1984-02-22 1986-05-13 Rca Corporation Method for making vertical MOSFET with reduced bipolar effects
JPS60196974A (ja) * 1984-03-19 1985-10-05 Toshiba Corp 導電変調型ｍｏｓｆｅｔ
EP0199293B2 (en) * 1985-04-24 1995-08-30 General Electric Company Insulated gate semiconductor device
JPS63141375A (ja) * 1986-12-03 1988-06-13 Fuji Electric Co Ltd 絶縁ゲ−ト電界効果トランジスタ
TW399774U (en) * 1989-07-03 2000-07-21 Gen Electric FET, IGBT and MCT structures to enhance operating characteristics
JP2503900B2 (ja) * 1993-07-30 1996-06-05 日本電気株式会社 半導体装置及びそれを用いたモ―タドライバ回路
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
DE19828494B4 (de) * 1998-06-26 2005-07-07 Robert Bosch Gmbh MOSFET-Bauelement mit Schutzvorrichtung gegen Durchschalten eines parasitären Transistors
US6683349B1 (en) * 1999-10-29 2004-01-27 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same
US8188538B2 (en) 2008-12-25 2012-05-29 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP6168370B2 (ja) * 2015-12-17 2017-07-26 ローム株式会社 ＳｉＣ電界効果トランジスタ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3923553A (en) * 1969-10-14 1975-12-02 Kogyo Gijutsuin Method of manufacturing lateral or field-effect transistors
US4145703A (en) * 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor

Also Published As

Publication number Publication date
GB2062349A (en) 1981-05-20
IT8025290A0 (it) 1980-10-13
IT1133869B (it) 1986-07-24
YU278180A (en) 1982-10-31
JPS5673472A (en) 1981-06-18
DE3039803A1 (de) 1981-05-14
FR2469003A1 (fr) 1981-05-08

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