SE8902775L - Foerbaettrad motstaandsupphettare foer diamantframstaellning genom cvd - Google Patents

Foerbaettrad motstaandsupphettare foer diamantframstaellning genom cvd

Info

Publication number
SE8902775L
SE8902775L SE8902775A SE8902775A SE8902775L SE 8902775 L SE8902775 L SE 8902775L SE 8902775 A SE8902775 A SE 8902775A SE 8902775 A SE8902775 A SE 8902775A SE 8902775 L SE8902775 L SE 8902775L
Authority
SE
Sweden
Prior art keywords
heater
panels
substrate
cvd
forbettrad
Prior art date
Application number
SE8902775A
Other languages
English (en)
Other versions
SE8902775D0 (sv
Inventor
T R Anthony
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE8902775D0 publication Critical patent/SE8902775D0/sv
Publication of SE8902775L publication Critical patent/SE8902775L/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Resistance Heating (AREA)
SE8902775A 1988-08-22 1989-08-18 Foerbaettrad motstaandsupphettare foer diamantframstaellning genom cvd SE8902775L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/234,773 US4958592A (en) 1988-08-22 1988-08-22 Resistance heater for diamond production by CVD

Publications (2)

Publication Number Publication Date
SE8902775D0 SE8902775D0 (sv) 1989-08-18
SE8902775L true SE8902775L (sv) 1990-02-23

Family

ID=22882769

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8902775A SE8902775L (sv) 1988-08-22 1989-08-18 Foerbaettrad motstaandsupphettare foer diamantframstaellning genom cvd

Country Status (8)

Country Link
US (1) US4958592A (sv)
JP (1) JPH0288499A (sv)
KR (1) KR900003428A (sv)
CA (1) CA1318225C (sv)
FR (1) FR2635535B1 (sv)
IE (1) IE61889B1 (sv)
SE (1) SE8902775L (sv)
ZA (1) ZA893989B (sv)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413589B1 (en) 1988-11-29 2002-07-02 Chou H. Li Ceramic coating method
US4953499A (en) * 1989-08-03 1990-09-04 General Electric Company Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means
US5110579A (en) * 1989-09-14 1992-05-05 General Electric Company Transparent diamond films and method for making
DE3935865C1 (sv) * 1989-10-27 1990-10-04 Philips Patentverwaltung Gmbh, 2000 Hamburg, De
DE69127609T2 (de) * 1990-07-18 1998-01-22 Sumitomo Electric Industries Vorrichtung und verfahren zur herstellung von diamanten
US5096736A (en) * 1990-08-07 1992-03-17 General Electric Company Cvd diamond for coating twist drills
US5256206A (en) * 1990-08-07 1993-10-26 General Electric Company CVD diamond for coating twist drills
CA2044543C (en) * 1990-08-10 1999-12-14 Louis Kimball Bigelow Multi-layer superhard film structure
ATE134223T1 (de) * 1990-12-24 1996-02-15 Gen Electric Verkleidung aus metall zur steigerung der wachstumsgeschwindigkeit beim aufdampfen von diamant mittels cvd
US5145712A (en) * 1991-02-08 1992-09-08 Center For Innovative Technology Chemical deposition of diamond
US5240749A (en) * 1991-08-27 1993-08-31 University Of Central Florida Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition
GB9123331D0 (en) * 1991-11-04 1991-12-18 De Beers Ind Diamond Apparatus for depositing a material on a substrate by chemical vapour deposition
CA2082711A1 (en) * 1991-12-13 1993-06-14 Philip G. Kosky Cvd diamond growth on hydride-forming metal substrates
US5234484A (en) * 1992-02-24 1993-08-10 Itt Corporation Method for annealing phosphors applied to surfaces having melting points below the annealing temperature of the phosphor
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
JP3381319B2 (ja) * 1993-08-06 2003-02-24 住友電気工業株式会社 ダイヤモンド合成方法
WO1995011699A1 (en) * 1993-10-29 1995-05-04 The Trustees Of Boston University Physiologically stable compositions of butyric acid, and butyric acid salts and derivatives as anti-neoplastic agents
US5833753A (en) * 1995-12-20 1998-11-10 Sp 3, Inc. Reactor having an array of heating filaments and a filament force regulator
US6286206B1 (en) 1997-02-25 2001-09-11 Chou H. Li Heat-resistant electronic systems and circuit boards
US5937514A (en) 1997-02-25 1999-08-17 Li; Chou H. Method of making a heat-resistant system
WO1999040883A2 (en) * 1998-02-11 1999-08-19 Faller Douglas V Compositions and methods for the treatment of cystic fibrosis
US6676492B2 (en) 1998-12-15 2004-01-13 Chou H. Li Chemical mechanical polishing
US6458017B1 (en) 1998-12-15 2002-10-01 Chou H. Li Planarizing method
US6976904B2 (en) * 1998-07-09 2005-12-20 Li Family Holdings, Ltd. Chemical mechanical polishing slurry
US6464912B1 (en) * 1999-01-06 2002-10-15 Cvd, Incorporated Method for producing near-net shape free standing articles by chemical vapor deposition
US6432206B1 (en) * 1999-08-30 2002-08-13 Si Diamond Technology, Inc. Heating element for use in a hot filament chemical vapor deposition chamber
KR100382943B1 (ko) * 2001-02-26 2003-05-09 프리시젼다이아몬드 주식회사 고온 열 필라멘트를 이용한 기상화학다이아몬드증착장치
KR100657229B1 (ko) * 2002-02-28 2006-12-14 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 티타니아 나노시트 배향 박막과 그 제조 방법 및 티타니아나노시트 배향 박막을 구비한 물품
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
US8291856B2 (en) * 2008-03-07 2012-10-23 Tokyo Electron Limited Gas heating device for a vapor deposition system
DE102008044028A1 (de) * 2008-11-24 2010-08-12 Cemecon Ag Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD
DE102008044025A1 (de) * 2008-11-24 2010-08-05 Cemecon Ag Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD
WO2010105112A1 (en) * 2009-03-11 2010-09-16 Hemaquest Pharmaceuticals, Inc. Detection of short-chain fatty acids in biological samples
US8272347B2 (en) * 2009-09-14 2012-09-25 Tokyo Electron Limited High temperature gas heating device for a vapor deposition system
US20110086869A1 (en) 2009-09-24 2011-04-14 The Trustees Of Boston University Methods for treating viral disorders
WO2011072086A1 (en) 2009-12-08 2011-06-16 Hemaquest Pharmaceuticals, Inc. Methods and low dose regimens for treating red blood cell disorders
WO2011113013A2 (en) 2010-03-11 2011-09-15 Hemaquest Pharmaceuticals, Inc. Methods and compositions for treating viral or virally-induced conditions
JP7158104B2 (ja) 2016-07-15 2022-10-21 ビラクタ セラピューティクス，インク． Ｎｋ細胞ベースの療法で使用するためのｈｄａｃ阻害剤
AU2020283590A1 (en) 2019-05-31 2022-01-20 Viracta Subsidiary, Inc. Methods of treating virally associated cancers with histone deacetylase inhibitors

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS58153324A (ja) * 1982-03-08 1983-09-12 Mitsubishi Electric Corp 光をエネルギ−源とする化学気相堆積装置
JPH0644554B2 (ja) * 1984-03-28 1994-06-08 株式会社富士電機総合研究所 プラズマｃｖｄ装置
JPS61171120A (ja) * 1985-01-25 1986-08-01 Jeol Ltd 光励起プロセス装置
US4859490A (en) * 1986-07-23 1989-08-22 Sumitomo Electric Industries, Ltd. Method for synthesizing diamond
JPS6472992A (en) * 1987-09-14 1989-03-17 Sumitomo Electric Industries Diamond synthesizing installation
JPH0950092A (ja) * 1995-08-08 1997-02-18 Fuji Photo Film Co Ltd 感光性組成物及びそれを用いた要素

Also Published As

Publication number Publication date
US4958592A (en) 1990-09-25
FR2635535B1 (fr) 1992-02-21
FR2635535A1 (fr) 1990-02-23
JPH0288499A (ja) 1990-03-28
ZA893989B (en) 1990-08-29
KR900003428A (ko) 1990-03-26
IE61889B1 (en) 1994-11-30
CA1318225C (en) 1993-05-25
IE891658L (en) 1990-02-22
SE8902775D0 (sv) 1989-08-18

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