SG46606A1 - Device seperation structure and semiconductor device improved in wiring structure - Google Patents

Device seperation structure and semiconductor device improved in wiring structure

Info

Publication number
SG46606A1
SG46606A1 SG1996006690A SG1996006690A SG46606A1 SG 46606 A1 SG46606 A1 SG 46606A1 SG 1996006690 A SG1996006690 A SG 1996006690A SG 1996006690 A SG1996006690 A SG 1996006690A SG 46606 A1 SG46606 A1 SG 46606A1
Authority
SG
Singapore
Prior art keywords
seperation
region
semiconductor device
improved
wiring structure
Prior art date
Application number
SG1996006690A
Other languages
English (en)
Inventor
Hayao Ohzu
Hidekazu Takahashi
Kei Ishizuka
Toshihiko Ichise
Yuzo Kataoka
Original Assignee
Conon Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Conon Kabushiki Kaisha filed Critical Conon Kabushiki Kaisha
Publication of SG46606A1 publication Critical patent/SG46606A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
SG1996006690A 1990-05-31 1991-05-29 Device seperation structure and semiconductor device improved in wiring structure SG46606A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13962490 1990-05-31
JP13962390 1990-05-31
JP16994790 1990-06-29

Publications (1)

Publication Number Publication Date
SG46606A1 true SG46606A1 (en) 1998-02-20

Family

ID=27317906

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996006690A SG46606A1 (en) 1990-05-31 1991-05-29 Device seperation structure and semiconductor device improved in wiring structure

Country Status (7)

Country Link
US (2) US5200639A (de)
EP (1) EP0460861B1 (de)
KR (1) KR950007421B1 (de)
AT (1) ATE205963T1 (de)
DE (1) DE69132730T2 (de)
MY (1) MY108878A (de)
SG (1) SG46606A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3305415B2 (ja) * 1992-06-18 2002-07-22 キヤノン株式会社 半導体装置、インクジェットヘッド、および画像形成装置
US5534069A (en) * 1992-07-23 1996-07-09 Canon Kabushiki Kaisha Method of treating active material
US5580808A (en) * 1992-07-30 1996-12-03 Canon Kabushiki Kaisha Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam
US5652180A (en) * 1993-06-28 1997-07-29 Kawasaki Steel Corporation Method of manufacturing semiconductor device with contact structure
US6046079A (en) * 1993-08-18 2000-04-04 United Microelectronics Corporation Method for prevention of latch-up of CMOS devices
KR0175000B1 (ko) * 1994-12-14 1999-02-01 윤종용 전자파 억제구조를 갖는 반도체 소자
JPH08191054A (ja) * 1995-01-10 1996-07-23 Kawasaki Steel Corp 半導体装置及びその製造方法
US6001729A (en) * 1995-01-10 1999-12-14 Kawasaki Steel Corporation Method of forming wiring structure for semiconductor device
JPH08255907A (ja) * 1995-01-18 1996-10-01 Canon Inc 絶縁ゲート型トランジスタ及びその製造方法
KR0183729B1 (ko) * 1995-08-18 1999-04-15 김광호 극 박막의 금속층 형성방법 및 이를 이용한 배선 형성방법
JP3381767B2 (ja) * 1997-09-22 2003-03-04 東京エレクトロン株式会社 成膜方法および半導体装置の製造方法
JP3472742B2 (ja) * 2000-03-31 2003-12-02 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
US6653617B2 (en) 2000-07-03 2003-11-25 Canon Kabushiki Kaisha Photoelectric conversion device
US20020155261A1 (en) * 2001-04-24 2002-10-24 Sung-Hsiung Wang Method for forming interconnect structure with low dielectric constant
WO2003044863A1 (en) * 2001-11-20 2003-05-30 The Regents Of The University Of California Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications
TW578321B (en) * 2002-10-02 2004-03-01 Topro Technology Inc Complementary metal-oxide semiconductor structure for a battery protection circuit and battery protection circuit therewith
US6815714B1 (en) * 2003-02-20 2004-11-09 National Semiconductor Corporation Conductive structure in a semiconductor material
US6812486B1 (en) * 2003-02-20 2004-11-02 National Semiconductor Corporation Conductive structure and method of forming the structure
DE10346312B4 (de) * 2003-10-06 2015-04-09 Infineon Technologies Ag Halbleiterbauteil mit mehreren parallel bzw. seriell miteinander verschalteten Funktionselementen
CN1294647C (zh) * 2003-11-25 2007-01-10 上海华虹Nec电子有限公司 一种降低rfcmos器件噪声的方法
US7002231B2 (en) * 2004-02-02 2006-02-21 Micron Technology, Inc. Barrier regions for image sensors
US7902624B2 (en) * 2004-02-02 2011-03-08 Aptina Imaging Corporation Barrier regions for image sensors
US7920185B2 (en) * 2004-06-30 2011-04-05 Micron Technology, Inc. Shielding black reference pixels in image sensors
EP1724822A3 (de) * 2005-05-17 2007-01-24 Sumco Corporation Halbleitersubstrat und Verfahren zu dessen Herstellung
JP4241856B2 (ja) * 2006-06-29 2009-03-18 三洋電機株式会社 半導体装置および半導体装置の製造方法
US7791170B2 (en) * 2006-07-10 2010-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a deep junction for electrical crosstalk reduction of an image sensor
US7989282B2 (en) 2009-03-26 2011-08-02 International Business Machines Corporation Structure and method for latchup improvement using through wafer via latchup guard ring

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044452A (en) * 1976-10-06 1977-08-30 International Business Machines Corporation Process for making field effect and bipolar transistors on the same semiconductor chip
US4472728A (en) * 1982-02-19 1984-09-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Imaging X-ray spectrometer
JPS594121A (ja) * 1982-06-30 1984-01-10 Mitsubishi Electric Corp 半導体装置
JPS59165455A (ja) * 1983-03-10 1984-09-18 Toshiba Corp 半導体装置
JPS60148147A (ja) * 1984-01-13 1985-08-05 Nec Corp 半導体装置
JPS63116445A (ja) * 1986-11-04 1988-05-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPS63156373A (ja) * 1986-12-19 1988-06-29 Matsushita Electric Works Ltd フオトダイオ−ドアレイの製法
US4819052A (en) * 1986-12-22 1989-04-04 Texas Instruments Incorporated Merged bipolar/CMOS technology using electrically active trench
JPS63217644A (ja) * 1987-03-06 1988-09-09 Fuji Electric Co Ltd 半導体装置
US4977439A (en) * 1987-04-03 1990-12-11 Esquivel Agerico L Buried multilevel interconnect system
JPS6437051A (en) * 1987-07-31 1989-02-07 Nec Corp Manufacture of semiconductor device
US5051792A (en) * 1987-10-20 1991-09-24 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound for compound semiconductors
US4924019A (en) * 1987-12-21 1990-05-08 Cvd Incorporated Synthesis of high purity dimethylaluminum hydride
JPH02185026A (ja) * 1989-01-11 1990-07-19 Nec Corp Ａｌ薄膜の選択的形成方法
PT95232B (pt) * 1989-09-09 1998-06-30 Canon Kk Processo de producao de uma pelicula de aluminio depositada
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
EP0448223B1 (de) * 1990-02-19 1996-06-26 Canon Kabushiki Kaisha Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
JPH04346231A (ja) * 1991-05-23 1992-12-02 Canon Inc 半導体装置の製造方法
US5447568A (en) * 1991-12-26 1995-09-05 Canon Kabushiki Kaisha Chemical vapor deposition method and apparatus making use of liquid starting material

Also Published As

Publication number Publication date
MY108878A (en) 1996-11-30
US5665630A (en) 1997-09-09
DE69132730T2 (de) 2002-07-04
ATE205963T1 (de) 2001-10-15
EP0460861A2 (de) 1991-12-11
DE69132730D1 (de) 2001-10-25
KR950007421B1 (ko) 1995-07-10
EP0460861B1 (de) 2001-09-19
KR910020872A (ko) 1991-12-20
EP0460861A3 (en) 1992-09-02
US5200639A (en) 1993-04-06

Similar Documents

Publication Publication Date Title
EP0460861A3 (en) Device separation structure and semiconductor device improved in wiring structure
EP0459773A3 (en) Semiconductor device and method for producing the same
JPS5743438A (en) Semiconductor device and manufacture thereof
AU3280993A (en) Photovoltaic device and method for producing the same
EP0242663A3 (de) Lichtempfindliches Bauelement mit einem Linsennetz
EP0459771A3 (en) Electrode for semiconductor device and method for producing the same
EP0237280A3 (de) Magnetfeldsensor
IT8520269A0 (it) Dispositivo a circuito integrato a semiconduttori e procedimento per la produzione di esso.
GR3022247T3 (en) Noise reducing element and electrical circuit having the same
MY108561A (en) Electrode for semiconductor element and semiconductor device having the electrode and process for producing the same.
SE8206122D0 (sv) Spennanordning
IT8448587A0 (it) Dispositivo per cicli e simili atto a trasformarli in veicoli a portata multipla di piu' occupanti
EP0281310A3 (de) Heterostruktur-Halbleiteranordnungen
IT8709327A0 (it) Procedimento per la generazione elettronica di una immagine termica e dispositivo per l'esecuzione del procedimento.
EP0465151A3 (en) Semiconductor device with shottky junction
EP0366082A3 (de) Träger für eine Halbleiteranordnung
EP0146330A3 (de) Integrierte Schaltungsanordnung mit strukturiertem Kontaktkörper
IT1218344B (it) Processo per l'autoallineamento di un doppio strato di silicio policristallino,in un dispositivo a circuito integrato,mediante un' operazione di ossidazione
JPS538566A (en) Mounting structure of semiconductor ic circuit
JPS57201062A (en) Semiconductor device
GB8503303D0 (en) Electronic integrated component
JPS52116073A (en) Hermetic structure in which integrated circuit element is sealed up ai rtightly
JPS52120776A (en) Semiconductor device
IT1195785B (it) Dispositivi a circuiti integrati a smiconduttori
JPS53124975A (en) Semiconductor device