SG52152A1 - Photo sensor and method for forming the same - Google Patents

Photo sensor and method for forming the same

Info

Publication number
SG52152A1
SG52152A1 SG1995000642A SG1995000642A SG52152A1 SG 52152 A1 SG52152 A1 SG 52152A1 SG 1995000642 A SG1995000642 A SG 1995000642A SG 1995000642 A SG1995000642 A SG 1995000642A SG 52152 A1 SG52152 A1 SG 52152A1
Authority
SG
Singapore
Prior art keywords
forming
same
photo sensor
photo
sensor
Prior art date
Application number
SG1995000642A
Other languages
English (en)
Inventor
Shinji Takakura
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of SG52152A1 publication Critical patent/SG52152A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
SG1995000642A 1994-06-30 1995-06-15 Photo sensor and method for forming the same SG52152A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6171838A JPH0818093A (ja) 1994-06-30 1994-06-30 半導体受光素子及び半導体装置並びにそれらの作製方法

Publications (1)

Publication Number Publication Date
SG52152A1 true SG52152A1 (en) 1998-09-28

Family

ID=15930700

Family Applications (2)

Application Number Title Priority Date Filing Date
SG1995000642A SG52152A1 (en) 1994-06-30 1995-06-15 Photo sensor and method for forming the same
SG1997002581A SG63728A1 (en) 1994-06-30 1995-06-15 Photo sensor and method for forming the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG1997002581A SG63728A1 (en) 1994-06-30 1995-06-15 Photo sensor and method for forming the same

Country Status (7)

Country Link
US (4) US5898209A (fr)
EP (1) EP0694974B1 (fr)
JP (1) JPH0818093A (fr)
KR (1) KR100385306B1 (fr)
DE (1) DE69524684T2 (fr)
MY (1) MY117089A (fr)
SG (2) SG52152A1 (fr)

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JP2882354B2 (ja) * 1996-04-30 1999-04-12 日本電気株式会社 受光素子内蔵集積回路装置
JP3170463B2 (ja) * 1996-09-30 2001-05-28 シャープ株式会社 回路内蔵受光素子
JP3918220B2 (ja) * 1997-02-27 2007-05-23 ソニー株式会社 半導体装置及びその製造方法
US5994162A (en) * 1998-02-05 1999-11-30 International Business Machines Corporation Integrated circuit-compatible photo detector device and fabrication process
US6034407A (en) * 1998-07-31 2000-03-07 Boeing North American, Inc. Multi-spectral planar photodiode infrared radiation detector pixels
EP0986110A1 (fr) * 1998-09-10 2000-03-15 Electrowatt Technology Innovation AG Dispositif semiconducteur détecteur de lumière et son utilisation pour le contrôle de flammes
US6118142A (en) * 1998-11-09 2000-09-12 United Microelectronics Corp. CMOS sensor
US6168966B1 (en) * 1999-02-18 2001-01-02 Taiwan Semiconductor Manufacturing Company Fabrication of uniform areal sensitivity image array
JP3317942B2 (ja) * 1999-11-08 2002-08-26 シャープ株式会社 半導体装置およびその製造方法
JP4208172B2 (ja) * 2000-10-31 2009-01-14 シャープ株式会社 フォトダイオードおよびそれを用いた回路内蔵受光素子
US7212240B1 (en) 2001-05-25 2007-05-01 Dalsa, Inc. Imager with a row of photodiodes or pinned photo diodes
US6504196B1 (en) 2001-08-30 2003-01-07 Micron Technology, Inc. CMOS imager and method of formation
US6960796B2 (en) * 2002-11-26 2005-11-01 Micron Technology, Inc. CMOS imager pixel designs with storage capacitor
KR100685892B1 (ko) * 2005-06-07 2007-02-26 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
JP4618064B2 (ja) * 2005-09-12 2011-01-26 ソニー株式会社 半導体装置およびその製造方法
US7652313B2 (en) * 2005-11-10 2010-01-26 International Business Machines Corporation Deep trench contact and isolation of buried photodetectors
JP4396684B2 (ja) * 2006-10-04 2010-01-13 ソニー株式会社 固体撮像装置の製造方法
US8908070B2 (en) * 2010-06-18 2014-12-09 Fujifilm Corporation Solid state imaging device and digital camera
FR2969821A1 (fr) * 2010-12-23 2012-06-29 St Microelectronics Sa Dispositif d'imagerie matriciel a photosites a commandes monocoup de transfert de charges
JP6119184B2 (ja) * 2012-10-19 2017-04-26 株式会社ニコン 固体撮像素子、撮像装置および固体撮像素子の製造方法
EP3651213A4 (fr) 2017-08-09 2020-05-20 Kaneka Corporation Élément de conversion photoélectrique et dispositif de conversion photoélectrique
JP7110210B2 (ja) * 2017-09-13 2022-08-01 株式会社カネカ 光電変換素子および光電変換装置
EP3664161A1 (fr) 2017-11-15 2020-06-10 Kaneka Corporation Dispositif de conversion photoélectrique

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JPS51113481A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device
CA1119493A (fr) * 1978-07-21 1982-03-09 Mamoru Fujieda Systeme d'injection de carburant pour moteurs a combustion interne
JPS5638697A (en) * 1979-09-05 1981-04-13 Mitsubishi Electric Corp Detector for number of passed articles
DE3167682D1 (en) * 1980-04-22 1985-01-24 Semiconductor Res Found Semiconductor image sensor
DE3168333D1 (en) * 1980-09-19 1985-02-28 Nec Corp Semiconductor photoelectric converter
DE3280137D1 (de) * 1981-09-17 1990-04-19 Toshiba Kawasaki Kk Ein optischer kopf.
JPS5963778A (ja) * 1982-10-01 1984-04-11 Hamamatsu Tv Kk シリコンホトダイオ−ド装置およびその製造方法
JPS59108344A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像素子
US5210434A (en) * 1983-07-02 1993-05-11 Canon Kabushiki Kaisha Photoelectric converter with scanning circuit
JPS6097681A (ja) * 1983-10-31 1985-05-31 Matsushita Electric Works Ltd モノリシツク集積回路
US5268309A (en) * 1984-09-01 1993-12-07 Canon Kabushiki Kaisha Method for manufacturing a photosensor
JPS6161457A (ja) * 1984-09-01 1986-03-29 Canon Inc 光センサおよびその製造方法
JPH0654957B2 (ja) * 1985-11-13 1994-07-20 キヤノン株式会社 光電変換装置
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JP2757985B2 (ja) * 1986-10-01 1998-05-25 ソニー株式会社 受光装置とその製造方法
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JPS63132455U (fr) * 1987-02-20 1988-08-30
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JPH01211966A (ja) * 1988-02-18 1989-08-25 Fujitsu Ltd 固体撮像素子およびその製造方法
JPH01273364A (ja) * 1988-04-25 1989-11-01 Clarion Co Ltd フォトダイオードアレイおよびその製造方法
JPH02187079A (ja) * 1989-01-13 1990-07-23 Sharp Corp ホトダイオード
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US5410175A (en) * 1989-08-31 1995-04-25 Hamamatsu Photonics K.K. Monolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate
JPH05145051A (ja) * 1991-11-18 1993-06-11 Sanyo Electric Co Ltd 光半導体装置
JPH05206500A (ja) * 1992-01-28 1993-08-13 Nippondenso Co Ltd 光電変換モジュール

Also Published As

Publication number Publication date
DE69524684D1 (de) 2002-01-31
US5825071A (en) 1998-10-20
DE69524684T2 (de) 2002-08-08
EP0694974A3 (fr) 1996-05-15
EP0694974A2 (fr) 1996-01-31
KR960002909A (ko) 1996-01-26
US6097074A (en) 2000-08-01
KR100385306B1 (ko) 2003-09-13
EP0694974B1 (fr) 2001-12-19
SG63728A1 (en) 1999-03-30
JPH0818093A (ja) 1996-01-19
US5858810A (en) 1999-01-12
US5898209A (en) 1999-04-27
MY117089A (en) 2004-05-31

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