TW200603268A - Epitaxial compound semiconductor substrate and manufacturing method therefor - Google Patents

Epitaxial compound semiconductor substrate and manufacturing method therefor

Info

Publication number
TW200603268A
TW200603268A TW094117553A TW94117553A TW200603268A TW 200603268 A TW200603268 A TW 200603268A TW 094117553 A TW094117553 A TW 094117553A TW 94117553 A TW94117553 A TW 94117553A TW 200603268 A TW200603268 A TW 200603268A
Authority
TW
Taiwan
Prior art keywords
compound semiconductor
semiconductor layer
lattice
representing
single crystal
Prior art date
Application number
TW094117553A
Other languages
English (en)
Other versions
TWI381426B (zh
Inventor
Kenji Kohiro
Tomoyuki Takada
Kazumasa Ueda
Masahiko Hata
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of TW200603268A publication Critical patent/TW200603268A/zh
Application granted granted Critical
Publication of TWI381426B publication Critical patent/TWI381426B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H10D30/4738—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having multiple donor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3218—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
TW094117553A 2004-05-31 2005-05-27 Epitaxial compound semiconductor substrate and manufacturing method therefor TW200603268A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004160847A JP4867137B2 (ja) 2004-05-31 2004-05-31 化合物半導体エピタキシャル基板

Publications (2)

Publication Number Publication Date
TW200603268A true TW200603268A (en) 2006-01-16
TWI381426B TWI381426B (zh) 2013-01-01

Family

ID=35451135

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094117553A TW200603268A (en) 2004-05-31 2005-05-27 Epitaxial compound semiconductor substrate and manufacturing method therefor

Country Status (5)

Country Link
US (1) US8169004B2 (zh)
JP (1) JP4867137B2 (zh)
KR (1) KR101151933B1 (zh)
TW (1) TW200603268A (zh)
WO (1) WO2005117076A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109994582A (zh) * 2018-01-02 2019-07-09 山东浪潮华光光电子股份有限公司 一种降低GaAs基外延片翘曲度的DBR结构

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007025062A2 (en) * 2005-08-25 2007-03-01 Wakonda Technologies, Inc. Photovoltaic template
US20090114274A1 (en) * 2007-11-02 2009-05-07 Fritzemeier Leslie G Crystalline thin-film photovoltaic structures
US8236603B1 (en) 2008-09-04 2012-08-07 Solexant Corp. Polycrystalline semiconductor layers and methods for forming the same
JP4519196B2 (ja) 2008-11-27 2010-08-04 Ｄｏｗａエレクトロニクス株式会社 電子デバイス用エピタキシャル基板およびその製造方法
US8415187B2 (en) 2009-01-28 2013-04-09 Solexant Corporation Large-grain crystalline thin-film structures and devices and methods for forming the same
EP2416353A4 (en) * 2009-03-31 2013-07-31 Asahi Kasei Microdevices Corp SEMICONDUCTOR COMPONENT
WO2010116699A1 (ja) * 2009-04-06 2010-10-14 住友化学株式会社 半導体基板、半導体基板の製造方法、半導体基板の判定方法、および電子デバイス
WO2010116700A1 (ja) * 2009-04-07 2010-10-14 住友化学株式会社 半導体基板、半導体基板の製造方法、および電子デバイス
JP5627871B2 (ja) * 2009-10-30 2014-11-19 フューチャー ライト リミテッド ライアビリティ カンパニー 半導体素子およびその製造方法
CN102569364B (zh) * 2010-12-08 2014-05-14 中国科学院微电子研究所 一种高迁移率衬底结构及其制备方法
US8900969B2 (en) * 2012-01-27 2014-12-02 Skyworks Solutions, Inc. Methods of stress balancing in gallium arsenide wafer processing
US9093506B2 (en) 2012-05-08 2015-07-28 Skyworks Solutions, Inc. Process for fabricating gallium arsenide devices with copper contact layer
CN103594419B (zh) * 2012-08-16 2018-02-13 中国科学院微电子研究所 半导体器件制造方法
JP2014053418A (ja) * 2012-09-06 2014-03-20 Fujitsu Ltd 半導体装置
KR101626393B1 (ko) * 2013-12-31 2016-06-01 (재)한국나노기술원 스트레인 보상층을 포함한 기판 재활용 구조, 구조 생성 방법 및 소자 제작 방법
KR102472396B1 (ko) 2014-03-28 2022-12-01 인텔 코포레이션 선택적 에피택셜 성장된 iii-v족 재료 기반 디바이스
US9530719B2 (en) 2014-06-13 2016-12-27 Skyworks Solutions, Inc. Direct die solder of gallium arsenide integrated circuit dies and methods of manufacturing gallium arsenide wafers
JP6287951B2 (ja) * 2015-05-14 2018-03-07 三菱電機株式会社 化合物半導体装置
JP2018170458A (ja) * 2017-03-30 2018-11-01 株式会社東芝 高出力素子
GB2612372B (en) * 2021-11-02 2024-11-06 Iqe Plc A layered structure

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0752713B2 (ja) 1986-02-24 1995-06-05 沖電気工業株式会社 化合物半導体の成長方法
JP2677653B2 (ja) * 1989-02-03 1997-11-17 富士通株式会社 半導体装置
JPH0321093A (ja) * 1989-06-19 1991-01-29 Fujitsu Ltd 半導体発光装置
JP2970103B2 (ja) * 1991-08-28 1999-11-02 住友電気工業株式会社 半導体超格子構造
JP3129779B2 (ja) 1991-08-30 2001-01-31 株式会社東芝 半導体レーザ装置
JPH05144727A (ja) 1991-11-19 1993-06-11 Nippon Steel Corp ヘテロエピタキシヤルウエーハの製造方法
US5391896A (en) * 1992-09-02 1995-02-21 Midwest Research Institute Monolithic multi-color light emission/detection device
JPH06244217A (ja) * 1993-02-19 1994-09-02 Matsushita Electric Ind Co Ltd ヘテロ接合半導体装置
JP3254823B2 (ja) * 1993-06-28 2002-02-12 住友化学工業株式会社 半導体エピタキシャル基板およびその製造方法
JPH09148682A (ja) * 1995-11-20 1997-06-06 Furukawa Electric Co Ltd:The 半導体光素子
JP3428797B2 (ja) * 1996-02-08 2003-07-22 古河電気工業株式会社 半導体レーザ素子
JP2001053339A (ja) * 1999-08-11 2001-02-23 Toshiba Corp 半導体発光素子およびその製造方法
US6556602B2 (en) * 2000-12-05 2003-04-29 The Boeing Company Electron beam pumped semiconductor laser screen and associated fabrication method
JP5013238B2 (ja) * 2001-09-11 2012-08-29 信越半導体株式会社 半導体多層構造
JP2003113000A (ja) 2001-10-05 2003-04-18 Hitachi Cable Ltd 半導体エピタキシャルウェハ及びその製造方法
JP2004055788A (ja) * 2002-07-19 2004-02-19 Sony Corp 半導体装置
JP2004200433A (ja) * 2002-12-19 2004-07-15 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109994582A (zh) * 2018-01-02 2019-07-09 山东浪潮华光光电子股份有限公司 一种降低GaAs基外延片翘曲度的DBR结构

Also Published As

Publication number Publication date
US8169004B2 (en) 2012-05-01
US20070215905A1 (en) 2007-09-20
TWI381426B (zh) 2013-01-01
JP4867137B2 (ja) 2012-02-01
KR20070032721A (ko) 2007-03-22
JP2005340717A (ja) 2005-12-08
KR101151933B1 (ko) 2012-06-01
WO2005117076A1 (ja) 2005-12-08

Similar Documents

Publication Publication Date Title
TW200603268A (en) Epitaxial compound semiconductor substrate and manufacturing method therefor
JP5095064B2 (ja) シリコン基板上に堆積された窒化物層を有する半導体フィルムおよびその製造方法
TW200517532A (en) A method of fabricating an epitaxially grown layer
TW200510252A (en) Semiconductor layer
TW200516649A (en) GaN substrate, and manufacturing method for the same, nitride semiconductor device, and manufacturing method for the same
ATE490549T1 (de) Herstellung von gitterabstimmungs- halbleitersubstraten
TW200703462A (en) Wafer separation technique for the fabrication of free-standing (Al, In, Ga)N wafers
AU2003247130A1 (en) Method of transferring of a layer of strained semiconductor material
WO2002001608A3 (en) METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
TW200741821A (en) Method for manufacturing compound material wafers and method for recycling a used donor substrate
WO2010099544A3 (en) Tiled substrates for deposition and epitaxial lift off processes
EP1197992A4 (en) SEMICONDUCTOR DISC AND ITS PRODUCTION METHOD
ATE488622T1 (de) Verringerung von karottendefekten bei der siliciumcarbid-epitaxie
WO2004006327A3 (en) Transfer of a thin layer from a wafer comprising a buffer layer
WO2008064083A3 (en) Gallium trichloride injection scheme
WO2004090201A3 (fr) Procede de fabrication de cristaux monocristallins
WO2002059945A3 (en) Oxidized film structure and method of making epitaxial metal oxide structure
TW200715380A (en) Process for lateral disjonting of a semiconductor wafer and opto-electronic element
TW200503076A (en) III-V compound semiconductor crystal and method for production thereof
WO2011084269A3 (en) Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substrates
TW200703485A (en) Method of surface treating substrates and method of manufacturing III-V compound semiconductors
WO2004027858A8 (en) Formation of a relaxed useful layer from a wafer with no buffer layer
WO2009136718A3 (ko) 반도체 소자 및 그 제조방법
SG170676A1 (en) Epitaxial wafer and production method thereof
WO2009072631A1 (ja) 窒化物半導体素子の製造方法および窒化物半導体素子

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees