TW376576B - Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum - Google Patents

Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum

Info

Publication number
TW376576B
TW376576B TW087105385A TW87105385A TW376576B TW 376576 B TW376576 B TW 376576B TW 087105385 A TW087105385 A TW 087105385A TW 87105385 A TW87105385 A TW 87105385A TW 376576 B TW376576 B TW 376576B
Authority
TW
Taiwan
Prior art keywords
titanium
nitrogen
silicon
aluminum
substrate
Prior art date
Application number
TW087105385A
Other languages
English (en)
Inventor
Liang-Yuh Chen
Ted Guo
Roderick Craig Mosely
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW376576B publication Critical patent/TW376576B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/586—Nitriding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/045—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/048—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by using plasmas or gaseous environments, e.g. by nitriding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW087105385A 1997-04-11 1998-04-09 Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum TW376576B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/840,209 US6080665A (en) 1997-04-11 1997-04-11 Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum

Publications (1)

Publication Number Publication Date
TW376576B true TW376576B (en) 1999-12-11

Family

ID=25281734

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087105385A TW376576B (en) 1997-04-11 1998-04-09 Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum

Country Status (5)

Country Link
US (1) US6080665A (zh)
EP (1) EP0871217A3 (zh)
JP (1) JPH1145864A (zh)
KR (1) KR19980081269A (zh)
TW (1) TW376576B (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6077781A (en) * 1995-11-21 2000-06-20 Applied Materials, Inc. Single step process for blanket-selective CVD aluminum deposition
KR100269878B1 (ko) * 1997-08-22 2000-12-01 윤종용 반도체소자의금속배선형성방법
US6140228A (en) * 1997-11-13 2000-10-31 Cypress Semiconductor Corporation Low temperature metallization process
JP3568385B2 (ja) * 1998-03-16 2004-09-22 沖電気工業株式会社 半導体装置の製造方法
US6427904B1 (en) * 1999-01-29 2002-08-06 Clad Metals Llc Bonding of dissimilar metals
US6383915B1 (en) * 1999-02-03 2002-05-07 Applied Materials, Inc. Tailoring of a wetting/barrier layer to reduce electromigration in an aluminum interconnect
US6316353B1 (en) * 1999-02-18 2001-11-13 Micron Technology, Inc. Method of forming conductive connections
US6524951B2 (en) * 1999-03-01 2003-02-25 Micron Technology, Inc. Method of forming a silicide interconnect over a silicon comprising substrate and method of forming a stack of refractory metal nitride over refractory metal silicide over silicon
US6365507B1 (en) * 1999-03-01 2002-04-02 Micron Technology, Inc. Method of forming integrated circuitry
KR100355861B1 (ko) * 1999-05-11 2002-10-12 아남반도체 주식회사 반도체 소자의 제조 방법
US6355558B1 (en) * 1999-06-10 2002-03-12 Texas Instruments Incorporated Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films
US6214714B1 (en) * 1999-06-25 2001-04-10 Applied Materials, Inc. Method of titanium/titanium nitride integration
US6969448B1 (en) 1999-12-30 2005-11-29 Cypress Semiconductor Corp. Method for forming a metallization structure in an integrated circuit
US6561627B2 (en) * 2000-11-30 2003-05-13 Eastman Kodak Company Thermal actuator
US6688584B2 (en) * 2001-05-16 2004-02-10 Micron Technology, Inc. Compound structure for reduced contact resistance
US6709958B2 (en) 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
US20040203230A1 (en) * 2002-01-31 2004-10-14 Tetsuo Usami Semiconductor device having multilayered conductive layers
US6777328B2 (en) * 2002-01-31 2004-08-17 Oki Electric Industry Co., Ltd. Method of forming multilayered conductive layers for semiconductor device
KR100455382B1 (ko) * 2002-03-12 2004-11-06 삼성전자주식회사 듀얼 다마신 구조를 가지는 반도체 소자의 금속 배선 형성방법
WO2004076705A2 (en) * 2003-02-24 2004-09-10 University Of South Florida Reactive physical vapor deposition with sequential reactive gas injection
US20050221612A1 (en) * 2004-04-05 2005-10-06 International Business Machines Corporation A low thermal budget (mol) liner, a semiconductor device comprising said liner and method of forming said semiconductor device
US7550055B2 (en) * 2005-05-31 2009-06-23 Applied Materials, Inc. Elastomer bonding of large area sputtering target
KR100730478B1 (ko) * 2006-05-24 2007-06-19 동부일렉트로닉스 주식회사 반도체 소자 제조방법
US8003536B2 (en) * 2009-03-18 2011-08-23 International Business Machines Corporation Electromigration resistant aluminum-based metal interconnect structure
JP6832785B2 (ja) * 2016-08-08 2021-02-24 東京エレクトロン株式会社 シリコン窒化膜の成膜方法および成膜装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4762728A (en) * 1985-04-09 1988-08-09 Fairchild Semiconductor Corporation Low temperature plasma nitridation process and applications of nitride films formed thereby
US4715937A (en) * 1986-05-05 1987-12-29 The Board Of Trustees Of The Leland Stanford Junior University Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
US4782380A (en) * 1987-01-22 1988-11-01 Advanced Micro Devices, Inc. Multilayer interconnection for integrated circuit structure having two or more conductive metal layers
US4786360A (en) * 1987-03-30 1988-11-22 International Business Machines Corporation Anisotropic etch process for tungsten metallurgy
US5162262A (en) * 1989-03-14 1992-11-10 Mitsubishi Denki Kabushiki Kaisha Multi-layered interconnection structure for a semiconductor device and manufactured method thereof
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
US5478780A (en) * 1990-03-30 1995-12-26 Siemens Aktiengesellschaft Method and apparatus for producing conductive layers or structures for VLSI circuits
US5236868A (en) * 1990-04-20 1993-08-17 Applied Materials, Inc. Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-bearing gas in an integrated processing system
FR2670605B1 (fr) * 1990-12-13 1993-04-09 France Etat Procede de realisation d'une barriere de diffusion electriquement conductrice a l'interface metal/silicium d'un transistor mos et transistor correspondant.
FR2672731A1 (fr) * 1991-02-07 1992-08-14 France Telecom Procede d'oxydation localisee enterree d'un substrat de silicium et circuit integre correspondant.
US5242860A (en) * 1991-07-24 1993-09-07 Applied Materials, Inc. Method for the formation of tin barrier layer with preferential (111) crystallographic orientation
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5427666A (en) * 1993-09-09 1995-06-27 Applied Materials, Inc. Method for in-situ cleaning a Ti target in a Ti + TiN coating process
AU1745695A (en) * 1994-06-03 1996-01-04 Materials Research Corporation A method of nitridization of titanium thin films
JP3130207B2 (ja) * 1994-07-08 2001-01-31 松下電子工業株式会社 半導体装置の製造方法
JPH08186075A (ja) * 1994-12-29 1996-07-16 Nippon Steel Corp 半導体装置の製造方法及び半導体製造装置

Also Published As

Publication number Publication date
EP0871217A3 (en) 1999-08-04
JPH1145864A (ja) 1999-02-16
US6080665A (en) 2000-06-27
KR19980081269A (ko) 1998-11-25
EP0871217A2 (en) 1998-10-14

Similar Documents

Publication Publication Date Title
TW376576B (en) Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum
MY122412A (en) Heat treatment method for semiconductor substrates
WO2002013239A3 (en) Heater for jmf type wafers
KR950007032A (ko) 반도체장치의 절연층 형성방법 및 그 형성장치
WO2003040513A3 (en) In situ thermal processing of a hydrocarbon containing formation
DE69736969D1 (de) Verfahren zur Behandlung der Oberfläche von halbleitenden Substraten
WO2001078115A3 (en) Barrier coating for vitreous materials
WO2005043623A3 (de) Verfahren zum ausbilden eines dielektrikums auf einer kupferhaltigen metallisierung und kondensatoranordnung
WO1999010916A3 (en) Copper electroless deposition on a titanium-containing surface
WO1997026388A3 (en) Laser induced surfaces
ATE374847T1 (de) Anlage zum behandeln von substraten
TW328631B (en) Susceptor, apparatus of heat-treating semiconductor wafer, and method of heat-treating the same
AU8384498A (en) Method for improved cleaning of substrate processing systems
FR2756663B1 (fr) Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface
AU4463596A (en) Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
KR950000931A (ko) 증착 처리시 물체가 수용기에 고착하는 것을 제한하는 방법
KR970030381A (ko) 알루미늄 접촉 형성을 위한 개선된 방법
WO2003021009A3 (en) Process for treating a conductive surface and products formed thereby
TW430882B (en) Plasma film forming method
GB9826120D0 (en) Method for treatment of semiconductor substrate with chemical solution
MY129597A (en) Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish
TW326100B (en) Method for forming salicides
WO2004023529A3 (de) Vorrichtung und verfahren zum thermischen behandeln von halbleiterwafern
SG99313A1 (en) Process for treating semiconductor substrates
ES2140496T3 (es) Sustrato de metal duro con una capa de diamante de alta adherencia.