TW486718B - High-density plasma source for ionized metal deposition - Google Patents

High-density plasma source for ionized metal deposition Download PDF

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Publication number
TW486718B
TW486718B TW089116293A TW89116293A TW486718B TW 486718 B TW486718 B TW 486718B TW 089116293 A TW089116293 A TW 089116293A TW 89116293 A TW89116293 A TW 89116293A TW 486718 B TW486718 B TW 486718B
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TW
Taiwan
Prior art keywords
target
pole
magnetron
scope
patent application
Prior art date
Application number
TW089116293A
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English (en)
Chinese (zh)
Inventor
Jianming Fu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of TW486718B publication Critical patent/TW486718B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW089116293A 1999-08-12 2000-08-11 High-density plasma source for ionized metal deposition TW486718B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/373,097 US6183614B1 (en) 1999-02-12 1999-08-12 Rotating sputter magnetron assembly

Publications (1)

Publication Number Publication Date
TW486718B true TW486718B (en) 2002-05-11

Family

ID=23470933

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089116293A TW486718B (en) 1999-08-12 2000-08-11 High-density plasma source for ionized metal deposition

Country Status (6)

Country Link
US (1) US6183614B1 (de)
EP (1) EP1076352A3 (de)
JP (1) JP4936584B2 (de)
KR (1) KR100806988B1 (de)
SG (1) SG87153A1 (de)
TW (1) TW486718B (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7721673B2 (en) 2006-11-03 2010-05-25 Industrial Technology Research Institute Hollow cathode discharging apparatus
TWI401743B (zh) * 2009-12-24 2013-07-11 Ｄｍｓ有限公司 等離子反應器及使用其進行蝕刻的方法
CN103620731A (zh) * 2011-04-20 2014-03-05 欧瑞康贸易股份公司(特吕巴赫) 高功率溅射源
CN107923037A (zh) * 2015-09-08 2018-04-17 瑞士艾发科技 真空处理设备和用于真空处理基底的方法

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US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7721673B2 (en) 2006-11-03 2010-05-25 Industrial Technology Research Institute Hollow cathode discharging apparatus
TWI401743B (zh) * 2009-12-24 2013-07-11 Ｄｍｓ有限公司 等離子反應器及使用其進行蝕刻的方法
CN103620731A (zh) * 2011-04-20 2014-03-05 欧瑞康贸易股份公司(特吕巴赫) 高功率溅射源
CN103620731B (zh) * 2011-04-20 2016-10-26 欧瑞康表面解决方案股份公司，普费菲孔 高功率溅射源
CN107923037A (zh) * 2015-09-08 2018-04-17 瑞士艾发科技 真空处理设备和用于真空处理基底的方法
CN107923037B (zh) * 2015-09-08 2020-12-25 瑞士艾发科技 真空处理设备和用于真空处理基底的方法
TWI732781B (zh) * 2015-09-08 2021-07-11 瑞士商艾維太克股份有限公司 真空處理設備以及用於真空處理基板的方法

Also Published As

Publication number Publication date
US6183614B1 (en) 2001-02-06
KR20010021283A (ko) 2001-03-15
SG87153A1 (en) 2002-03-19
EP1076352A2 (de) 2001-02-14
KR100806988B1 (ko) 2008-02-25
EP1076352A3 (de) 2005-11-23
JP4936584B2 (ja) 2012-05-23
JP2001140070A (ja) 2001-05-22

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