TW486718B - High-density plasma source for ionized metal deposition - Google Patents

High-density plasma source for ionized metal deposition Download PDF

Info

Publication number: TW486718B
Authority: TW; Taiwan
Prior art keywords: target; pole; magnetron; scope; patent application
Prior art date: 1999-08-12

Application number

TW089116293A

Other languages

English (en)

Chinese (zh)

Inventor

Jianming Fu

Original Assignee

Applied Materials Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-08-12

Filing date

2000-08-11

Publication date

2002-05-11

2000-08-11 Application filed by Applied Materials Inc filed Critical Applied Materials Inc

2002-05-11 Application granted granted Critical

2002-05-11 Publication of TW486718B publication Critical patent/TW486718B/zh

Links

238000001465 metallisation Methods 0.000 title description 3
230000005291 magnetic effect Effects 0.000 claims abstract description 152
238000004544 sputter deposition Methods 0.000 claims abstract description 55
229910052751 metal Inorganic materials 0.000 claims abstract description 46
239000002184 metal Substances 0.000 claims abstract description 46
230000004907 flux Effects 0.000 claims abstract description 32
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 21
229910052802 copper Inorganic materials 0.000 claims abstract description 21
239000010949 copper Substances 0.000 claims abstract description 21
229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
238000002294 plasma sputter deposition Methods 0.000 claims abstract description 6
230000008878 coupling Effects 0.000 claims abstract description 4
238000010168 coupling process Methods 0.000 claims abstract description 4
238000005859 coupling reaction Methods 0.000 claims abstract description 4
238000006243 chemical reaction Methods 0.000 claims description 42
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 29
238000000034 method Methods 0.000 claims description 29
230000002079 cooperative effect Effects 0.000 claims description 24
239000007789 gas Substances 0.000 claims description 24
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 23
238000007747 plating Methods 0.000 claims description 18
239000000758 substrate Substances 0.000 claims description 18
229910052786 argon Inorganic materials 0.000 claims description 15
229910052757 nitrogen Inorganic materials 0.000 claims description 11
239000000463 material Substances 0.000 claims description 10
238000005477 sputtering target Methods 0.000 claims description 8
150000004767 nitrides Chemical class 0.000 claims description 6
230000001939 inductive effect Effects 0.000 claims description 3
239000000126 substance Substances 0.000 claims description 3
230000008093 supporting effect Effects 0.000 claims description 3
239000013078 crystal Substances 0.000 claims description 2
PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
239000003550 marker Substances 0.000 claims 2
YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 claims 1
229910052722 tritium Inorganic materials 0.000 claims 1
239000010936 titanium Substances 0.000 abstract description 23
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 16
229910052719 titanium Inorganic materials 0.000 abstract description 16
230000001976 improved effect Effects 0.000 abstract description 12
230000008901 benefit Effects 0.000 abstract description 7
150000002739 metals Chemical class 0.000 abstract description 4
230000002459 sustained effect Effects 0.000 abstract 2
NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 1
235000012431 wafers Nutrition 0.000 description 48
238000000151 deposition Methods 0.000 description 23
230000008021 deposition Effects 0.000 description 22
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 19
238000002474 experimental method Methods 0.000 description 14
239000002245 particle Substances 0.000 description 14
239000002574 poison Substances 0.000 description 14
231100000614 poison Toxicity 0.000 description 14
230000001965 increasing effect Effects 0.000 description 12
230000004888 barrier function Effects 0.000 description 9
229910052721 tungsten Inorganic materials 0.000 description 9
238000005240 physical vapour deposition Methods 0.000 description 8
238000005546 reactive sputtering Methods 0.000 description 8
239000010937 tungsten Substances 0.000 description 8
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
235000013601 eggs Nutrition 0.000 description 6
150000002500 ions Chemical class 0.000 description 6
230000008569 process Effects 0.000 description 6
238000012545 processing Methods 0.000 description 6
-1 argon ions Chemical class 0.000 description 5
230000000694 effects Effects 0.000 description 5
238000005229 chemical vapour deposition Methods 0.000 description 4
238000000576 coating method Methods 0.000 description 4
238000013461 design Methods 0.000 description 4
239000000696 magnetic material Substances 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 4
239000000203 mixture Substances 0.000 description 4
239000004065 semiconductor Substances 0.000 description 4
239000011248 coating agent Substances 0.000 description 3
238000007667 floating Methods 0.000 description 3
210000004185 liver Anatomy 0.000 description 3
230000007246 mechanism Effects 0.000 description 3
230000000630 rising effect Effects 0.000 description 3
229910001220 stainless steel Inorganic materials 0.000 description 3
239000010935 stainless steel Substances 0.000 description 3
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
238000004364 calculation method Methods 0.000 description 2
230000008859 change Effects 0.000 description 2
238000001816 cooling Methods 0.000 description 2
238000010586 diagram Methods 0.000 description 2
239000006185 dispersion Substances 0.000 description 2
238000009826 distribution Methods 0.000 description 2
238000009713 electroplating Methods 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
230000006872 improvement Effects 0.000 description 2
238000001459 lithography Methods 0.000 description 2
239000000047 product Substances 0.000 description 2
230000009467 reduction Effects 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
239000002002 slurry Substances 0.000 description 2
239000007787 solid Substances 0.000 description 2
NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
241001424392 Lucia limbaria Species 0.000 description 1
BMQTXPDDFOOMDL-UHFFFAOYSA-N [B+3].N.[Fe+2] Chemical compound [B+3].N.[Fe+2] BMQTXPDDFOOMDL-UHFFFAOYSA-N 0.000 description 1
238000000637 aluminium metallisation Methods 0.000 description 1
229910021529 ammonia Inorganic materials 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
230000009286 beneficial effect Effects 0.000 description 1
WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
239000003990 capacitor Substances 0.000 description 1
239000012159 carrier gas Substances 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
238000011109 contamination Methods 0.000 description 1
230000000875 corresponding effect Effects 0.000 description 1
230000007423 decrease Effects 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000005137 deposition process Methods 0.000 description 1
238000011161 development Methods 0.000 description 1
229910001873 dinitrogen Inorganic materials 0.000 description 1
230000005611 electricity Effects 0.000 description 1
230000002708 enhancing effect Effects 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
229910052735 hafnium Inorganic materials 0.000 description 1
238000003384 imaging method Methods 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
238000013383 initial experiment Methods 0.000 description 1
230000010354 integration Effects 0.000 description 1
230000003993 interaction Effects 0.000 description 1
230000005012 migration Effects 0.000 description 1
238000013508 migration Methods 0.000 description 1
238000006386 neutralization reaction Methods 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
238000012856 packing Methods 0.000 description 1
229910052763 palladium Inorganic materials 0.000 description 1
KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
230000000149 penetrating effect Effects 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
230000036470 plasma concentration Effects 0.000 description 1
239000011148 porous material Substances 0.000 description 1
239000000843 powder Substances 0.000 description 1
238000010248 power generation Methods 0.000 description 1
239000002243 precursor Substances 0.000 description 1
238000007639 printing Methods 0.000 description 1
230000005588 protonation Effects 0.000 description 1
230000005855 radiation Effects 0.000 description 1
238000011536 re-plating Methods 0.000 description 1
102220047090 rs6152 Human genes 0.000 description 1
238000013341 scale-up Methods 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
239000013589 supplement Substances 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
239000013077 target material Substances 0.000 description 1
238000012360 testing method Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Analytical Chemistry (AREA)
Materials Engineering (AREA)
Chemical Kinetics & Catalysis (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physical Vapour Deposition (AREA)
Electrodes Of Semiconductors (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

TW089116293A 1999-08-12 2000-08-11 High-density plasma source for ionized metal deposition TW486718B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US09/373,097 US6183614B1 (en)	1999-02-12	1999-08-12	Rotating sputter magnetron assembly

Publications (1)

Publication Number	Publication Date
TW486718B true TW486718B (en)	2002-05-11

Family

ID=23470933

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW089116293A TW486718B (en)	1999-08-12	2000-08-11	High-density plasma source for ionized metal deposition

Country Status (6)

Country	Link
US (1)	US6183614B1 (de)
EP (1)	EP1076352A3 (de)
JP (1)	JP4936584B2 (de)
KR (1)	KR100806988B1 (de)
SG (1)	SG87153A1 (de)
TW (1)	TW486718B (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7721673B2 (en)	2006-11-03	2010-05-25	Industrial Technology Research Institute	Hollow cathode discharging apparatus
TWI401743B (zh) *	2009-12-24	2013-07-11	Ｄｍｓ有限公司	等離子反應器及使用其進行蝕刻的方法
CN103620731A (zh) *	2011-04-20	2014-03-05	欧瑞康贸易股份公司(特吕巴赫)	高功率溅射源
CN107923037A (zh) *	2015-09-08	2018-04-17	瑞士艾发科技	真空处理设备和用于真空处理基底的方法

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6497802B2 (en) *	1999-02-12	2002-12-24	Applied Materials, Inc.	Self ionized plasma sputtering
US6306265B1 (en) *	1999-02-12	2001-10-23	Applied Materials, Inc.	High-density plasma for ionized metal deposition capable of exciting a plasma wave
US8696875B2 (en) *	1999-10-08	2014-04-15	Applied Materials, Inc.	Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6398929B1 (en) *	1999-10-08	2002-06-04	Applied Materials, Inc.	Plasma reactor and shields generating self-ionized plasma for sputtering
US10047430B2 (en)	1999-10-08	2018-08-14	Applied Materials, Inc.	Self-ionized and inductively-coupled plasma for sputtering and resputtering
US20030116427A1 (en) *	2001-08-30	2003-06-26	Applied Materials, Inc.	Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6451177B1 (en) *	2000-01-21	2002-09-17	Applied Materials, Inc.	Vault shaped target and magnetron operable in two sputtering modes
DE10196150B4 (de) *	2000-07-27	2013-07-04	Spp Process Technology Systems Uk Ltd.	Magnetron-Sputtervorrichtung und Verfahren zum Steuern einer solchen Vorrichtung
US6627050B2 (en) *	2000-07-28	2003-09-30	Applied Materials, Inc.	Method and apparatus for depositing a tantalum-containing layer on a substrate
US6780775B2 (en) *	2001-01-24	2004-08-24	Infineon Technologies Ag	Design of lithography alignment and overlay measurement marks on CMP finished damascene surface
US6663754B2 (en) *	2001-04-13	2003-12-16	Applied Materials, Inc.	Tubular magnet as center pole in unbalanced sputtering magnetron
SE521095C2 (sv) *	2001-06-08	2003-09-30	Cardinal Cg Co	Förfarande för reaktiv sputtring
US6491801B1 (en) *	2001-08-07	2002-12-10	Applied Materials, Inc.	Auxiliary vertical magnet outside a nested unbalanced magnetron
US6495009B1 (en) *	2001-08-07	2002-12-17	Applied Materials, Inc.	Auxiliary in-plane magnet inside a nested unbalanced magnetron
US6500676B1 (en)	2001-08-20	2002-12-31	Honeywell International Inc.	Methods and apparatus for depositing magnetic films
KR100439474B1 (ko) *	2001-09-12	2004-07-09	삼성전자주식회사	스퍼터링 장치
KR100439475B1 (ko) *	2001-09-28	2004-07-09	삼성전자주식회사	금속층 적층방법 및 장치
US6750156B2 (en)	2001-10-24	2004-06-15	Applied Materials, Inc.	Method and apparatus for forming an anti-reflective coating on a substrate
US6758950B2 (en)	2002-01-14	2004-07-06	Seagate Technology Llc	Controlled magnetron shape for uniformly sputtered thin film
KR100846484B1 (ko) *	2002-03-14	2008-07-17	삼성전자주식회사	Ｒｍｉｍ 전극 및 그 제조방법 및 이를 채용하는 스퍼터링장치
US7041200B2 (en) *	2002-04-19	2006-05-09	Applied Materials, Inc.	Reducing particle generation during sputter deposition
US20030216035A1 (en) *	2002-05-14	2003-11-20	Applied Materials, Inc.	Method and apparatus for sputter deposition
US6887786B2 (en) *	2002-05-14	2005-05-03	Applied Materials, Inc.	Method and apparatus for forming a barrier layer on a substrate
US6852202B2 (en) *	2002-05-21	2005-02-08	Applied Materials, Inc.	Small epicyclic magnetron with controlled radial sputtering profile
US6841050B2 (en)	2002-05-21	2005-01-11	Applied Materials, Inc.	Small planetary magnetron
US6979526B2 (en) *	2002-06-03	2005-12-27	Infineon Technologies Ag	Lithography alignment and overlay measurement marks formed by resist mask blocking for MRAMs
US7504006B2 (en) *	2002-08-01	2009-03-17	Applied Materials, Inc.	Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US7147759B2 (en) *	2002-09-30	2006-12-12	Zond, Inc.	High-power pulsed magnetron sputtering
US6896773B2 (en) *	2002-11-14	2005-05-24	Zond, Inc.	High deposition rate sputtering
US20040140196A1 (en) *	2003-01-17	2004-07-22	Applied Materials, Inc.	Shaping features in sputter deposition
US7604708B2 (en) *	2003-02-14	2009-10-20	Applied Materials, Inc.	Cleaning of native oxide with hydrogen-containing radicals
US7297247B2 (en) *	2003-05-06	2007-11-20	Applied Materials, Inc.	Electroformed sputtering target
US7910218B2 (en)	2003-10-22	2011-03-22	Applied Materials, Inc.	Cleaning and refurbishing chamber components having metal coatings
US9771648B2 (en) *	2004-08-13	2017-09-26	Zond, Inc.	Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US20050103620A1 (en) *	2003-11-19	2005-05-19	Zond, Inc.	Plasma source with segmented magnetron cathode
US20060049040A1 (en) *	2004-01-07	2006-03-09	Applied Materials, Inc.	Apparatus and method for two dimensional magnetron scanning for sputtering onto flat panels
US7513982B2 (en) *	2004-01-07	2009-04-07	Applied Materials, Inc.	Two dimensional magnetron scanning for flat panel sputtering
US8500975B2 (en) *	2004-01-07	2013-08-06	Applied Materials, Inc.	Method and apparatus for sputtering onto large flat panels
US9123508B2 (en)	2004-02-22	2015-09-01	Zond, Llc	Apparatus and method for sputtering hard coatings
US7223612B2 (en) *	2004-07-26	2007-05-29	Infineon Technologies Ag	Alignment of MTJ stack to conductive lines in the absence of topography
US20060021870A1 (en) *	2004-07-27	2006-02-02	Applied Materials, Inc.	Profile detection and refurbishment of deposition targets
US7442624B2 (en) *	2004-08-02	2008-10-28	Infineon Technologies Ag	Deep alignment marks on edge chips for subsequent alignment of opaque layers
US8088232B2 (en) *	2004-08-31	2012-01-03	H.C. Starck Inc.	Molybdenum tubular sputtering targets with uniform grain size and texture
US20060042728A1 (en)	2004-08-31	2006-03-02	Brad Lemon	Molybdenum sputtering targets
EP2477207A3 (de) *	2004-09-24	2014-09-03	Zond, Inc.	Vorrichtung zum Erzeugen von elektrischen Hochstrom-entladungen
US20060081459A1 (en) *	2004-10-18	2006-04-20	Applied Materials, Inc.	In-situ monitoring of target erosion
US7670436B2 (en)	2004-11-03	2010-03-02	Applied Materials, Inc.	Support ring assembly
JP4531599B2 (ja) *	2005-03-17	2010-08-25	株式会社アルバック	スパッタ源、スパッタ装置
US20060266639A1 (en) *	2005-05-24	2006-11-30	Applied Materials, Inc.	Sputtering target tiles having structured edges separated by a gap
JP4923450B2 (ja) *	2005-07-01	2012-04-25	富士ゼロックス株式会社	バッチ処理支援装置および方法、プログラム
US20070012559A1 (en) *	2005-07-13	2007-01-18	Applied Materials, Inc.	Method of improving magnetron sputtering of large-area substrates using a removable anode
US20070084720A1 (en) *	2005-07-13	2007-04-19	Akihiro Hosokawa	Magnetron sputtering system for large-area substrates having removable anodes
US20070012663A1 (en) *	2005-07-13	2007-01-18	Akihiro Hosokawa	Magnetron sputtering system for large-area substrates having removable anodes
US8617672B2 (en)	2005-07-13	2013-12-31	Applied Materials, Inc.	Localized surface annealing of components for substrate processing chambers
US20070051616A1 (en) *	2005-09-07	2007-03-08	Le Hienminh H	Multizone magnetron assembly
US7762114B2 (en) *	2005-09-09	2010-07-27	Applied Materials, Inc.	Flow-formed chamber component having a textured surface
US7588668B2 (en)	2005-09-13	2009-09-15	Applied Materials, Inc.	Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
US20070056843A1 (en) *	2005-09-13	2007-03-15	Applied Materials, Inc.	Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056850A1 (en) *	2005-09-13	2007-03-15	Applied Materials, Inc.	Large-area magnetron sputtering chamber with individually controlled sputtering zones
US8454804B2 (en) *	2005-10-28	2013-06-04	Applied Materials Inc.	Protective offset sputtering
US8460519B2 (en) *	2005-10-28	2013-06-11	Applied Materials Inc.	Protective offset sputtering
US9127362B2 (en)	2005-10-31	2015-09-08	Applied Materials, Inc.	Process kit and target for substrate processing chamber
US8435388B2 (en) *	2005-11-01	2013-05-07	Cardinal Cg Company	Reactive sputter deposition processes and equipment
KR100678640B1 (ko) *	2005-11-12	2007-02-05	삼성전자주식회사	Ｍｉｍ 커패시터를 구비하는 반도체 집적 회로 장치 및이의 제조 방법
US8647484B2 (en)	2005-11-25	2014-02-11	Applied Materials, Inc.	Target for sputtering chamber
US20070283884A1 (en) *	2006-05-30	2007-12-13	Applied Materials, Inc.	Ring assembly for substrate processing chamber
KR100910673B1 (ko) *	2006-08-04	2009-08-04	어플라이드 머티어리얼스, 인코포레이티드	다중 마그네트론들, 특히 2 레벨 접지형 마그네트론들의집단 스캐닝
JP4768689B2 (ja) *	2006-09-22	2011-09-07	株式会社東芝	マグネトロン型スパッタリング装置および半導体装置の製造方法
DE502006008952D1 (de) *	2006-11-14	2011-04-07	Applied Materials Inc	Magnetron-Sputterquelle, Sputter-Beschichtungsanlage und Verfahren zur Beschichtung eines Substrats
US7981262B2 (en)	2007-01-29	2011-07-19	Applied Materials, Inc.	Process kit for substrate processing chamber
US7942969B2 (en) *	2007-05-30	2011-05-17	Applied Materials, Inc.	Substrate cleaning chamber and components
US8968536B2 (en) *	2007-06-18	2015-03-03	Applied Materials, Inc.	Sputtering target having increased life and sputtering uniformity
US20090084317A1 (en) *	2007-09-28	2009-04-02	Applied Materials, Inc.	Atomic layer deposition chamber and components
US7901552B2 (en) *	2007-10-05	2011-03-08	Applied Materials, Inc.	Sputtering target with grooves and intersecting channels
US8475634B2 (en) *	2007-10-26	2013-07-02	OC Oerlikon Balzers AF	Application of HIPIMS to through silicon via metallization in three-dimensional wafer packaging
JP2009299184A (ja) *	2008-05-12	2009-12-24	Canon Anelva Corp	磁場発生装置、磁場発生方法、スパッタ装置及びデバイスの製造方法
US20100270262A1 (en) *	2009-04-22	2010-10-28	Applied Materials, Inc.	Etching low-k dielectric or removing resist with a filtered ionized gas
US20140262754A1 (en) *	2013-03-15	2014-09-18	Semicat, Inc.	Physical vapor deposition methods and systems to form semiconductor films using counterbalance magnetic field generators
CN102844460A (zh)	2010-02-17	2012-12-26	东曹Smd有限公司	溅射靶材
US20120027954A1 (en) *	2010-07-30	2012-02-02	Applied Materials, Inc.	Magnet for physical vapor deposition processes to produce thin films having low resistivity and non-uniformity
CN103177918B (zh) *	2011-12-26	2016-08-31	北京北方微电子基地设备工艺研究中心有限责任公司	一种磁控管及等离子体加工设备
US11024490B2 (en)	2017-12-11	2021-06-01	Applied Materials, Inc.	Magnetron having enhanced target cooling configuration
CN110106487B (zh) *	2019-05-28	2020-07-14	上海交通大学	一种提高靶材使用率的磁控溅射圆形平面靶枪的磁靶
US11948784B2 (en)	2021-10-21	2024-04-02	Applied Materials, Inc.	Tilted PVD source with rotating pedestal
US12609288B1 (en)	2022-02-03	2026-04-21	Seagate Technology Llc	Sputtering targets, and related apparatuses and methods

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3331406A1 (de)	1983-08-31	1985-03-14	Leybold-Heraeus GmbH, 5000 Köln	Zerstaeubungskatode
DE3480145D1 (en)	1983-12-05	1989-11-16	Leybold Ag	Magnetron cathode for the sputtering of ferromagnetic targets
JPS6289864A (ja) *	1985-06-27	1987-04-24	Matsushita Electric Ind Co Ltd	マグネトロンスパツタ装置
JPS6260866A (ja)	1985-08-02	1987-03-17	Fujitsu Ltd	マグネトロンスパツタ装置
US4818561A (en) *	1985-09-24	1989-04-04	Machine Technology, Inc.	Thin film deposition apparatus and method
JPH0812856B2 (ja)	1986-01-17	1996-02-07	株式会社日立製作所	プラズマ処理方法および装置
DE3619194A1 (de)	1986-06-06	1987-12-10	Leybold Heraeus Gmbh & Co Kg	Magnetron-zerstaeubungskatode fuer vakuum-beschichtungsanlagen
JPS63282263A (ja) *	1987-05-13	1988-11-18	Fuji Electric Co Ltd	マグネトロンスパッタリング装置
JPS6428921A (en) *	1987-07-24	1989-01-31	Tokuda Seisakusho	Plasma treatment device
DE3727901A1 (de)	1987-08-21	1989-03-02	Leybold Ag	Zerstaeubungskathode nach dem magnetronprinzip
US4963239A (en) *	1988-01-29	1990-10-16	Hitachi, Ltd.	Sputtering process and an apparatus for carrying out the same
JPH01268868A (ja) *	1988-04-20	1989-10-26	Fuji Photo Film Co Ltd	スパッタリング装置
JP2627651B2 (ja)	1988-10-17	1997-07-09	アネルバ株式会社	マグネトロンスパッタリング装置
JPH0361365A (ja) *	1989-07-28	1991-03-18	Ube Ind Ltd	イオンアシストスパッタリング方法および装置
DE3929695C2 (de)	1989-09-07	1996-12-19	Leybold Ag	Vorrichtung zum Beschichten eines Substrats
JP2934711B2 (ja)	1989-12-07	1999-08-16	カシオ計算機株式会社	スパッタ装置
JPH051373A (ja) *	1991-03-25	1993-01-08	Shin Meiwa Ind Co Ltd	スパツタリング装置
DE4125110C2 (de)	1991-07-30	1999-09-09	Leybold Ag	Magnetron-Zerstäubungskathode für Vakuumbeschichtungsanlagen
JPH0565642A (ja)	1991-09-10	1993-03-19	Matsushita Electric Ind Co Ltd	反応性スパツタリング装置
US5334302A (en) *	1991-11-15	1994-08-02	Tokyo Electron Limited	Magnetron sputtering apparatus and sputtering gun for use in the same
US5262028A (en)	1992-06-01	1993-11-16	Sierra Applied Sciences, Inc.	Planar magnetron sputtering magnet assembly
US5248402A (en)	1992-07-29	1993-09-28	Cvc Products, Inc.	Apple-shaped magnetron for sputtering system
US5334804A (en) *	1992-11-17	1994-08-02	Fujitsu Limited	Wire interconnect structures for connecting an integrated circuit to a substrate
US5417833A (en)	1993-04-14	1995-05-23	Varian Associates, Inc.	Sputtering apparatus having a rotating magnet array and fixed electromagnets
TW271490B (de)	1993-05-05	1996-03-01	Varian Associates
TW262566B (de)	1993-07-02	1995-11-11	Tokyo Electron Co Ltd
US5415754A (en)	1993-10-22	1995-05-16	Sierra Applied Sciences, Inc.	Method and apparatus for sputtering magnetic target materials
JPH07166346A (ja)	1993-12-13	1995-06-27	Ulvac Japan Ltd	マグネトロンスパッタリング装置
JPH07252651A (ja)	1994-03-15	1995-10-03	Fujitsu Ltd	マグネトロンスパッタリング装置及び金属薄膜成長方法
JPH11509273A (ja)	1995-07-10	1999-08-17	シーヴィシー、プラダクツ、インク	永久磁石配列装置とその方法
JP3629305B2 (ja)	1995-07-27	2005-03-16	株式会社アルバック	マグネトロンスパッタカソード
US5770025A (en)	1995-08-03	1998-06-23	Nihon Shinku Gijutsu Kabushiki Kaisha	Magnetron sputtering apparatus
JP3925967B2 (ja)	1996-09-18	2007-06-06	キヤノンアネルバ株式会社	スパッタリング装置のマグネトロンカソード電極
JP3935231B2 (ja) *	1996-09-18	2007-06-20	キヤノンアネルバ株式会社	スパッタリング装置
US5897752A (en) *	1997-05-20	1999-04-27	Applied Materials, Inc.	Wafer bias ring in a sustained self-sputtering reactor
US5795451A (en)	1997-06-12	1998-08-18	Read-Rite Corporation	Sputtering apparatus with a rotating magnet array
JP4137198B2 (ja) *	1997-09-06	2008-08-20	キヤノンアネルバ株式会社	スパッタリング装置
US5976327A (en) *	1997-12-12	1999-11-02	Applied Materials, Inc.	Step coverage and overhang improvement by pedestal bias voltage modulation
US6290825B1 (en) *	1999-02-12	2001-09-18	Applied Materials, Inc.	High-density plasma source for ionized metal deposition

1999
- 1999-08-12 US US09/373,097 patent/US6183614B1/en not_active Expired - Lifetime
2000
- 2000-08-11 SG SG200004437A patent/SG87153A1/en unknown
- 2000-08-11 TW TW089116293A patent/TW486718B/zh not_active IP Right Cessation
- 2000-08-12 KR KR1020000046753A patent/KR100806988B1/ko not_active Expired - Fee Related
- 2000-08-14 EP EP00306909A patent/EP1076352A3/de not_active Withdrawn
- 2000-08-14 JP JP2000246012A patent/JP4936584B2/ja not_active Expired - Lifetime

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7721673B2 (en)	2006-11-03	2010-05-25	Industrial Technology Research Institute	Hollow cathode discharging apparatus
TWI401743B (zh) *	2009-12-24	2013-07-11	Ｄｍｓ有限公司	等離子反應器及使用其進行蝕刻的方法
CN103620731A (zh) *	2011-04-20	2014-03-05	欧瑞康贸易股份公司(特吕巴赫)	高功率溅射源
CN103620731B (zh) *	2011-04-20	2016-10-26	欧瑞康表面解决方案股份公司，普费菲孔	高功率溅射源
CN107923037A (zh) *	2015-09-08	2018-04-17	瑞士艾发科技	真空处理设备和用于真空处理基底的方法
CN107923037B (zh) *	2015-09-08	2020-12-25	瑞士艾发科技	真空处理设备和用于真空处理基底的方法
TWI732781B (zh) *	2015-09-08	2021-07-11	瑞士商艾維太克股份有限公司	真空處理設備以及用於真空處理基板的方法

Also Published As

Publication number	Publication date
JP4936584B2 (ja)	2012-05-23
KR20010021283A (ko)	2001-03-15
SG87153A1 (en)	2002-03-19
JP2001140070A (ja)	2001-05-22
KR100806988B1 (ko)	2008-02-25
EP1076352A2 (de)	2001-02-14
US6183614B1 (en)	2001-02-06
EP1076352A3 (de)	2005-11-23

Legal Events

Date	Code	Title	Description
2002-10-03	GD4A	Issue of patent certificate for granted invention patent
2004-06-21	MM4A	Annulment or lapse of patent due to non-payment of fees

Publication	Publication Date	Title
TW486718B (en)	2002-05-11	High-density plasma source for ionized metal deposition
TW436863B (en)	2001-05-28	High-density plasma source for ionized metal
US6875321B2 (en)	2005-04-05	Auxiliary magnet array in conjunction with magnetron sputtering
US6790323B2 (en)	2004-09-14	Self ionized sputtering using a high density plasma source
TW497132B (en)	2002-08-01	Coaxial electromagnet in a magnetron sputtering reactor
US7618521B2 (en)	2009-11-17	Split magnet ring on a magnetron sputter chamber
TW483944B (en)	2002-04-21	Self ionized plasma for sputtering copper
CN101847598B (zh)	2012-06-20	用于溅射和再溅射的自离子化及电感耦合等离子体
TWI328258B (en)	2010-08-01	Aluminum sputtering while biasing wafer
TW476801B (en)	2002-02-21	Apparatus for processing a substrate contained in a process chamber
US6497802B2 (en)	2002-12-24	Self ionized plasma sputtering
KR20040063002A (ko)	2004-07-09	스퍼터링 및 리스퍼터링을 위한 자기 이온화 및 유도 결합플라즈마
JPH1129865A (ja)	1999-02-02	スパッタリングチャンバのマグネット
CN101142094A (zh)	2008-03-12	磁控管溅射室上的分离磁体环
TWI226082B (en)	2005-01-01	Physical vapor deposition process and apparatus thereof
TW202013431A (zh)	2020-04-01	用於半導體處理室中的磁控管組件的方法及裝置