TWI264121B - A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device - Google Patents
A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display deviceInfo
- Publication number
- TWI264121B TWI264121B TW091133983A TW91133983A TWI264121B TW I264121 B TWI264121 B TW I264121B TW 091133983 A TW091133983 A TW 091133983A TW 91133983 A TW91133983 A TW 91133983A TW I264121 B TWI264121 B TW I264121B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- layer
- display device
- curved surface
- peeled
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R11/00—Arrangements for holding or mounting articles, not otherwise provided for
- B60R11/02—Arrangements for holding or mounting articles, not otherwise provided for for radio sets, television sets, telephones, or the like; Arrangement of controls thereof
- B60R11/0229—Arrangements for holding or mounting articles, not otherwise provided for for radio sets, television sets, telephones, or the like; Arrangement of controls thereof for displays, e.g. cathodic tubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R11/00—Arrangements for holding or mounting articles, not otherwise provided for
- B60R11/04—Mounting of cameras operative during drive; Arrangement of controls thereof relative to the vehicle
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R11/00—Arrangements for holding or mounting articles, not otherwise provided for
- B60R2011/0001—Arrangements for holding or mounting articles, not otherwise provided for characterised by position
- B60R2011/004—Arrangements for holding or mounting articles, not otherwise provided for characterised by position outside the vehicle
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R2300/00—Details of viewing arrangements using cameras and displays, specially adapted for use in a vehicle
- B60R2300/20—Details of viewing arrangements using cameras and displays, specially adapted for use in a vehicle characterised by the type of display used
- B60R2300/202—Details of viewing arrangements using cameras and displays, specially adapted for use in a vehicle characterised by the type of display used displaying a blind spot scene on the vehicle part responsible for the blind spot
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R2300/00—Details of viewing arrangements using cameras and displays, specially adapted for use in a vehicle
- B60R2300/80—Details of viewing arrangements using cameras and displays, specially adapted for use in a vehicle characterised by the intended use of the viewing arrangement
- B60R2300/802—Details of viewing arrangements using cameras and displays, specially adapted for use in a vehicle characterised by the intended use of the viewing arrangement for monitoring and displaying vehicle exterior blind spot views
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7426—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
- H10P72/7442—Separation by peeling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Multimedia (AREA)
- Recrystallisation Techniques (AREA)
- Fittings On The Vehicle Exterior For Carrying Loads, And Devices For Holding Or Mounting Articles (AREA)
- Instrument Panels (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001367412 | 2001-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200300610A TW200300610A (en) | 2003-06-01 |
| TWI264121B true TWI264121B (en) | 2006-10-11 |
Family
ID=19177159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091133983A TWI264121B (en) | 2001-11-30 | 2002-11-21 | A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device |
Country Status (5)
| Country | Link |
|---|---|
| US (6) | US7335573B2 (zh) |
| JP (13) | JP5020370B2 (zh) |
| KR (10) | KR100944887B1 (zh) |
| CN (4) | CN1430192A (zh) |
| TW (1) | TWI264121B (zh) |
Families Citing this family (368)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8415208B2 (en) * | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
| JP5057619B2 (ja) * | 2001-08-01 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW554398B (en) * | 2001-08-10 | 2003-09-21 | Semiconductor Energy Lab | Method of peeling off and method of manufacturing semiconductor device |
| TW558743B (en) | 2001-08-22 | 2003-10-21 | Semiconductor Energy Lab | Peeling method and method of manufacturing semiconductor device |
| KR100944886B1 (ko) * | 2001-10-30 | 2010-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제조 방법 |
| TWI264121B (en) | 2001-11-30 | 2006-10-11 | Semiconductor Energy Lab | A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device |
| US6953735B2 (en) * | 2001-12-28 | 2005-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device by transferring a layer to a support with curvature |
| JP4373063B2 (ja) | 2002-09-02 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 電子回路装置 |
| JP4693411B2 (ja) | 2002-10-30 | 2011-06-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4373085B2 (ja) | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法及び転写方法 |
| JP4574118B2 (ja) * | 2003-02-12 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| EP1610599A1 (en) * | 2003-03-28 | 2005-12-28 | TDK Corporation | Multilayer substrate and method for producing same |
| US7772756B2 (en) | 2003-08-01 | 2010-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device including a dual emission panel |
| JP4627140B2 (ja) * | 2003-10-17 | 2011-02-09 | 株式会社 日立ディスプレイズ | 表示装置 |
| WO2005041249A2 (en) | 2003-10-28 | 2005-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing optical film |
| GB0327093D0 (en) * | 2003-11-21 | 2003-12-24 | Koninkl Philips Electronics Nv | Active matrix displays and other electronic devices having plastic substrates |
| CN100583193C (zh) | 2003-11-28 | 2010-01-20 | 株式会社半导体能源研究所 | 制造显示设备的方法 |
| US7768405B2 (en) * | 2003-12-12 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and manufacturing method thereof |
| US7727854B2 (en) | 2003-12-19 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US7508305B2 (en) * | 2003-12-26 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Packing material, tag, certificate, paper money, and securities |
| US8136735B2 (en) * | 2004-01-23 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | ID label, ID card, and ID tag |
| US7699232B2 (en) | 2004-02-06 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101187403B1 (ko) * | 2004-06-02 | 2012-10-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
| US7452786B2 (en) * | 2004-06-29 | 2008-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit, and element substrate |
| US7591863B2 (en) * | 2004-07-16 | 2009-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip |
| EP1800348A4 (en) | 2004-08-23 | 2015-09-16 | Semiconductor Energy Lab | Wireless chip and manufacturing method thereof |
| DE202004014778U1 (de) * | 2004-09-22 | 2006-02-09 | Mekra Lang Gmbh & Co. Kg | Nutzfahrzeuge mit Kameraeinrichtung sowie Kameraeinrichtung hierfür |
| US7843010B2 (en) * | 2004-09-30 | 2010-11-30 | Sharp Kabushiki Kaisha | Crystalline semiconductor film and method for manufacturing the same |
| CN101151544B (zh) | 2005-03-28 | 2011-08-03 | 株式会社半导体能源研究所 | 半导体器件、其制造方法、及其测量方法 |
| US8649895B2 (en) | 2005-04-19 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Managing method of building material and wireless chip applied to the method |
| US8030132B2 (en) * | 2005-05-31 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including peeling step |
| US7368307B2 (en) * | 2005-06-07 | 2008-05-06 | Eastman Kodak Company | Method of manufacturing an OLED device with a curved light emitting surface |
| JP4916680B2 (ja) * | 2005-06-30 | 2012-04-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法 |
| IL169824A (en) * | 2005-07-21 | 2011-03-31 | Danny Knafou | Controllably displayable motor vehicle window and method of advertising or messaging with the same |
| KR101171189B1 (ko) * | 2005-10-21 | 2012-08-06 | 삼성전자주식회사 | 더미 글래스 기판과 표시장치의 제조방법 |
| DE102006007284A1 (de) * | 2006-02-16 | 2007-08-30 | Airbus Deutschland Gmbh | Informations- und Unterhaltungssystem in einem Flugzeug |
| JP4713433B2 (ja) * | 2006-05-15 | 2011-06-29 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタ |
| US8006164B2 (en) | 2006-09-29 | 2011-08-23 | Intel Corporation | Memory cell supply voltage control based on error detection |
| US7804421B2 (en) * | 2007-02-21 | 2010-09-28 | Audiovox Corporation | Vehicle safety system |
| US20080211652A1 (en) * | 2007-03-02 | 2008-09-04 | Nanolumens Acquisition, Inc. | Dynamic Vehicle Display System |
| US20080211653A1 (en) * | 2007-03-02 | 2008-09-04 | Nanolumens Acquisition, Inc. | Vehicle with Interior Video Display for Exterior View |
| US7759629B2 (en) * | 2007-03-20 | 2010-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| JP5084323B2 (ja) * | 2007-03-29 | 2012-11-28 | 株式会社リコー | 半導体装置 |
| KR101305876B1 (ko) * | 2007-08-09 | 2013-09-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| US8114722B2 (en) * | 2007-08-24 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US8168511B2 (en) * | 2007-09-20 | 2012-05-01 | Sharp Kabushiki Kaisha | Display device manufacturing method and laminated structure |
| KR101385747B1 (ko) * | 2007-09-21 | 2014-04-21 | 삼성전자주식회사 | 전자 종이 표시 유니트 및 이를 갖는 이동 통신 단말기 |
| JP2009141093A (ja) * | 2007-12-06 | 2009-06-25 | Toshiba Corp | 発光素子及び発光素子の製造方法 |
| CN101903974B (zh) * | 2008-02-28 | 2012-07-25 | 夏普株式会社 | 薄膜层叠器件的制造方法和显示装置的制造方法 |
| KR101004849B1 (ko) * | 2008-09-02 | 2010-12-28 | 삼성전기주식회사 | 박막소자 제조방법 |
| JP2011003522A (ja) | 2008-10-16 | 2011-01-06 | Semiconductor Energy Lab Co Ltd | フレキシブル発光装置、電子機器及びフレキシブル発光装置の作製方法 |
| KR101938125B1 (ko) | 2008-12-17 | 2019-01-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
| US20100253902A1 (en) | 2009-04-07 | 2010-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
| US8362800B2 (en) | 2010-10-13 | 2013-01-29 | Monolithic 3D Inc. | 3D semiconductor device including field repairable logics |
| US9509313B2 (en) | 2009-04-14 | 2016-11-29 | Monolithic 3D Inc. | 3D semiconductor device |
| US8669778B1 (en) | 2009-04-14 | 2014-03-11 | Monolithic 3D Inc. | Method for design and manufacturing of a 3D semiconductor device |
| US8362482B2 (en) * | 2009-04-14 | 2013-01-29 | Monolithic 3D Inc. | Semiconductor device and structure |
| US7986042B2 (en) | 2009-04-14 | 2011-07-26 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
| US8378715B2 (en) | 2009-04-14 | 2013-02-19 | Monolithic 3D Inc. | Method to construct systems |
| US8427200B2 (en) | 2009-04-14 | 2013-04-23 | Monolithic 3D Inc. | 3D semiconductor device |
| US9711407B2 (en) * | 2009-04-14 | 2017-07-18 | Monolithic 3D Inc. | Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer |
| US8384426B2 (en) * | 2009-04-14 | 2013-02-26 | Monolithic 3D Inc. | Semiconductor device and structure |
| US8395191B2 (en) | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
| US8058137B1 (en) | 2009-04-14 | 2011-11-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
| US8405420B2 (en) * | 2009-04-14 | 2013-03-26 | Monolithic 3D Inc. | System comprising a semiconductor device and structure |
| US9577642B2 (en) | 2009-04-14 | 2017-02-21 | Monolithic 3D Inc. | Method to form a 3D semiconductor device |
| US8754533B2 (en) * | 2009-04-14 | 2014-06-17 | Monolithic 3D Inc. | Monolithic three-dimensional semiconductor device and structure |
| US8373439B2 (en) | 2009-04-14 | 2013-02-12 | Monolithic 3D Inc. | 3D semiconductor device |
| JP5444817B2 (ja) * | 2009-04-24 | 2014-03-19 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
| WO2010131827A1 (ko) * | 2009-05-13 | 2010-11-18 | 포인트엔지니어링 | 다공성 기판을 이용한 유기발광소자 및 그 제조 방법 |
| DE102009021273A1 (de) * | 2009-05-14 | 2010-11-18 | Schott Solar Ag | Verfahren und Vorrichtung zur Herstellung eines photovoltaischen Dünnschichtmoduls |
| US8911653B2 (en) | 2009-05-21 | 2014-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
| KR101979327B1 (ko) | 2009-09-16 | 2019-05-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 이의 제조 방법 |
| US11018133B2 (en) | 2009-10-12 | 2021-05-25 | Monolithic 3D Inc. | 3D integrated circuit |
| US11984445B2 (en) | 2009-10-12 | 2024-05-14 | Monolithic 3D Inc. | 3D semiconductor devices and structures with metal layers |
| US10157909B2 (en) | 2009-10-12 | 2018-12-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US8742476B1 (en) | 2012-11-27 | 2014-06-03 | Monolithic 3D Inc. | Semiconductor device and structure |
| US9099424B1 (en) | 2012-08-10 | 2015-08-04 | Monolithic 3D Inc. | Semiconductor system, device and structure with heat removal |
| US8476145B2 (en) | 2010-10-13 | 2013-07-02 | Monolithic 3D Inc. | Method of fabricating a semiconductor device and structure |
| US12027518B1 (en) | 2009-10-12 | 2024-07-02 | Monolithic 3D Inc. | 3D semiconductor devices and structures with metal layers |
| US8581349B1 (en) | 2011-05-02 | 2013-11-12 | Monolithic 3D Inc. | 3D memory semiconductor device and structure |
| US11374118B2 (en) | 2009-10-12 | 2022-06-28 | Monolithic 3D Inc. | Method to form a 3D integrated circuit |
| US10366970B2 (en) | 2009-10-12 | 2019-07-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10354995B2 (en) | 2009-10-12 | 2019-07-16 | Monolithic 3D Inc. | Semiconductor memory device and structure |
| US10388863B2 (en) | 2009-10-12 | 2019-08-20 | Monolithic 3D Inc. | 3D memory device and structure |
| US10910364B2 (en) | 2009-10-12 | 2021-02-02 | Monolitaic 3D Inc. | 3D semiconductor device |
| US8536023B2 (en) | 2010-11-22 | 2013-09-17 | Monolithic 3D Inc. | Method of manufacturing a semiconductor device and structure |
| US10043781B2 (en) | 2009-10-12 | 2018-08-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US8450804B2 (en) | 2011-03-06 | 2013-05-28 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
| US8148728B2 (en) | 2009-10-12 | 2012-04-03 | Monolithic 3D, Inc. | Method for fabrication of a semiconductor device and structure |
| US8497770B2 (en) * | 2010-01-29 | 2013-07-30 | Matthew Stevens Staffanou | Low profile flexible light bar tachometer |
| KR101399609B1 (ko) | 2010-02-05 | 2014-05-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제조 방법 |
| US8461035B1 (en) | 2010-09-30 | 2013-06-11 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
| US8026521B1 (en) | 2010-10-11 | 2011-09-27 | Monolithic 3D Inc. | Semiconductor device and structure |
| US8492886B2 (en) | 2010-02-16 | 2013-07-23 | Monolithic 3D Inc | 3D integrated circuit with logic |
| US8373230B1 (en) | 2010-10-13 | 2013-02-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
| US9099526B2 (en) | 2010-02-16 | 2015-08-04 | Monolithic 3D Inc. | Integrated circuit device and structure |
| US8541819B1 (en) | 2010-12-09 | 2013-09-24 | Monolithic 3D Inc. | Semiconductor device and structure |
| US9219005B2 (en) | 2011-06-28 | 2015-12-22 | Monolithic 3D Inc. | Semiconductor system and device |
| US10217667B2 (en) | 2011-06-28 | 2019-02-26 | Monolithic 3D Inc. | 3D semiconductor device, fabrication method and system |
| US8901613B2 (en) | 2011-03-06 | 2014-12-02 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
| US9953925B2 (en) | 2011-06-28 | 2018-04-24 | Monolithic 3D Inc. | Semiconductor system and device |
| US8642416B2 (en) | 2010-07-30 | 2014-02-04 | Monolithic 3D Inc. | Method of forming three dimensional integrated circuit devices using layer transfer technique |
| US9477306B1 (en) | 2010-08-24 | 2016-10-25 | Amazon Technologies, Inc. | Mutamorphic haptic substrate |
| US8797487B2 (en) | 2010-09-10 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, liquid crystal display device, and manufacturing method thereof |
| US8647919B2 (en) | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
| US8558960B2 (en) | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
| TWI457880B (zh) * | 2010-09-30 | 2014-10-21 | E Ink Holdings Inc | 曲面顯示模組與顯示裝置 |
| US8163581B1 (en) | 2010-10-13 | 2012-04-24 | Monolith IC 3D | Semiconductor and optoelectronic devices |
| US8273610B2 (en) | 2010-11-18 | 2012-09-25 | Monolithic 3D Inc. | Method of constructing a semiconductor device and structure |
| US12362219B2 (en) | 2010-11-18 | 2025-07-15 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US10497713B2 (en) | 2010-11-18 | 2019-12-03 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US11482440B2 (en) | 2010-12-16 | 2022-10-25 | Monolithic 3D Inc. | 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits |
| US10290682B2 (en) | 2010-10-11 | 2019-05-14 | Monolithic 3D Inc. | 3D IC semiconductor device and structure with stacked memory |
| US11024673B1 (en) | 2010-10-11 | 2021-06-01 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11315980B1 (en) | 2010-10-11 | 2022-04-26 | Monolithic 3D Inc. | 3D semiconductor device and structure with transistors |
| CN101964398A (zh) * | 2010-10-11 | 2011-02-02 | 福建钧石能源有限公司 | 柔性薄膜太阳能电池及其制造方法 |
| US11018191B1 (en) | 2010-10-11 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11257867B1 (en) | 2010-10-11 | 2022-02-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with oxide bonds |
| US11227897B2 (en) | 2010-10-11 | 2022-01-18 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
| US11600667B1 (en) | 2010-10-11 | 2023-03-07 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
| US11469271B2 (en) | 2010-10-11 | 2022-10-11 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
| US11158674B2 (en) | 2010-10-11 | 2021-10-26 | Monolithic 3D Inc. | Method to produce a 3D semiconductor device and structure |
| US8114757B1 (en) | 2010-10-11 | 2012-02-14 | Monolithic 3D Inc. | Semiconductor device and structure |
| US10896931B1 (en) | 2010-10-11 | 2021-01-19 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US12094892B2 (en) | 2010-10-13 | 2024-09-17 | Monolithic 3D Inc. | 3D micro display device and structure |
| US10943934B2 (en) | 2010-10-13 | 2021-03-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
| US11694922B2 (en) | 2010-10-13 | 2023-07-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
| US11605663B2 (en) | 2010-10-13 | 2023-03-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
| US9197804B1 (en) | 2011-10-14 | 2015-11-24 | Monolithic 3D Inc. | Semiconductor and optoelectronic devices |
| US11327227B2 (en) | 2010-10-13 | 2022-05-10 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
| US11043523B1 (en) | 2010-10-13 | 2021-06-22 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
| US12080743B2 (en) | 2010-10-13 | 2024-09-03 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
| US10679977B2 (en) | 2010-10-13 | 2020-06-09 | Monolithic 3D Inc. | 3D microdisplay device and structure |
| US10978501B1 (en) | 2010-10-13 | 2021-04-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
| US11163112B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
| US8379458B1 (en) | 2010-10-13 | 2013-02-19 | Monolithic 3D Inc. | Semiconductor device and structure |
| US11404466B2 (en) | 2010-10-13 | 2022-08-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
| US11929372B2 (en) | 2010-10-13 | 2024-03-12 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
| US11063071B1 (en) | 2010-10-13 | 2021-07-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
| US11984438B2 (en) | 2010-10-13 | 2024-05-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
| US12360310B2 (en) | 2010-10-13 | 2025-07-15 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
| US11855114B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
| US11133344B2 (en) | 2010-10-13 | 2021-09-28 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
| US11869915B2 (en) | 2010-10-13 | 2024-01-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
| US11437368B2 (en) | 2010-10-13 | 2022-09-06 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
| US10833108B2 (en) | 2010-10-13 | 2020-11-10 | Monolithic 3D Inc. | 3D microdisplay device and structure |
| US10998374B1 (en) | 2010-10-13 | 2021-05-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
| US11164898B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
| US11855100B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
| KR20120042151A (ko) * | 2010-10-22 | 2012-05-03 | 삼성모바일디스플레이주식회사 | 플렉서블 디스플레이 장치의 제조 방법 |
| US11804396B2 (en) | 2010-11-18 | 2023-10-31 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
| US11482438B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
| US11508605B2 (en) | 2010-11-18 | 2022-11-22 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US12068187B2 (en) | 2010-11-18 | 2024-08-20 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding and DRAM memory cells |
| US11901210B2 (en) | 2010-11-18 | 2024-02-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
| US11862503B2 (en) | 2010-11-18 | 2024-01-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
| US11569117B2 (en) | 2010-11-18 | 2023-01-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
| US12100611B2 (en) | 2010-11-18 | 2024-09-24 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
| US11355380B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | Methods for producing 3D semiconductor memory device and structure utilizing alignment marks |
| US11923230B1 (en) | 2010-11-18 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
| US12243765B2 (en) | 2010-11-18 | 2025-03-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
| US11443971B2 (en) | 2010-11-18 | 2022-09-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
| US12144190B2 (en) | 2010-11-18 | 2024-11-12 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding and memory cells preliminary class |
| US11164770B1 (en) | 2010-11-18 | 2021-11-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
| US11107721B2 (en) | 2010-11-18 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with NAND logic |
| US11784082B2 (en) | 2010-11-18 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
| US11211279B2 (en) | 2010-11-18 | 2021-12-28 | Monolithic 3D Inc. | Method for processing a 3D integrated circuit and structure |
| US12033884B2 (en) | 2010-11-18 | 2024-07-09 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
| US11482439B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors |
| US11521888B2 (en) | 2010-11-18 | 2022-12-06 | Monolithic 3D Inc. | 3D semiconductor device and structure with high-k metal gate transistors |
| US11615977B2 (en) | 2010-11-18 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US11094576B1 (en) | 2010-11-18 | 2021-08-17 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
| US12136562B2 (en) | 2010-11-18 | 2024-11-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
| US11735462B2 (en) | 2010-11-18 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
| US12154817B1 (en) | 2010-11-18 | 2024-11-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
| US11854857B1 (en) | 2010-11-18 | 2023-12-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
| US11610802B2 (en) | 2010-11-18 | 2023-03-21 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes |
| US11004719B1 (en) | 2010-11-18 | 2021-05-11 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
| US12272586B2 (en) | 2010-11-18 | 2025-04-08 | Monolithic 3D Inc. | 3D semiconductor memory device and structure with memory and metal layers |
| US11031275B2 (en) | 2010-11-18 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
| US12125737B1 (en) | 2010-11-18 | 2024-10-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
| US11018042B1 (en) | 2010-11-18 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US11495484B2 (en) | 2010-11-18 | 2022-11-08 | Monolithic 3D Inc. | 3D semiconductor devices and structures with at least two single-crystal layers |
| US11355381B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US11121021B2 (en) | 2010-11-18 | 2021-09-14 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US12463076B2 (en) | 2010-12-16 | 2025-11-04 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US8975670B2 (en) | 2011-03-06 | 2015-03-10 | Monolithic 3D Inc. | Semiconductor device and structure for heat removal |
| DE102011016428A1 (de) * | 2011-04-08 | 2012-10-11 | GM Global Technology Operations LLC (n. d. Gesetzen des Staates Delaware) | Anzeigevorrichtung für ein Fahrzeug und Verfahren zur Herstellung der Anzeigevorrichtung |
| US10388568B2 (en) | 2011-06-28 | 2019-08-20 | Monolithic 3D Inc. | 3D semiconductor device and system |
| TWI433625B (zh) | 2011-07-04 | 2014-04-01 | Ind Tech Res Inst | 軟性電子元件的製法 |
| US11021136B1 (en) * | 2011-08-29 | 2021-06-01 | The Boeing Company | Methods and systems for providing a remote virtual view |
| US8687399B2 (en) | 2011-10-02 | 2014-04-01 | Monolithic 3D Inc. | Semiconductor device and structure |
| US9029173B2 (en) | 2011-10-18 | 2015-05-12 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
| JP5907722B2 (ja) | 2011-12-23 | 2016-04-26 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| US9000557B2 (en) | 2012-03-17 | 2015-04-07 | Zvi Or-Bach | Semiconductor device and structure |
| US11594473B2 (en) | 2012-04-09 | 2023-02-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
| US8557632B1 (en) | 2012-04-09 | 2013-10-15 | Monolithic 3D Inc. | Method for fabrication of a semiconductor device and structure |
| US11164811B2 (en) | 2012-04-09 | 2021-11-02 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers and oxide-to-oxide bonding |
| US11881443B2 (en) | 2012-04-09 | 2024-01-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
| US10600888B2 (en) | 2012-04-09 | 2020-03-24 | Monolithic 3D Inc. | 3D semiconductor device |
| US11616004B1 (en) | 2012-04-09 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
| US11088050B2 (en) | 2012-04-09 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers |
| US11735501B1 (en) | 2012-04-09 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
| US11410912B2 (en) | 2012-04-09 | 2022-08-09 | Monolithic 3D Inc. | 3D semiconductor device with vias and isolation layers |
| US11476181B1 (en) | 2012-04-09 | 2022-10-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US11694944B1 (en) | 2012-04-09 | 2023-07-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
| US9584783B2 (en) | 2012-05-21 | 2017-02-28 | Omri KRIEZMAN | Vehicle projection systems and method |
| TWI669835B (zh) | 2012-07-05 | 2019-08-21 | 日商半導體能源研究所股份有限公司 | 發光裝置 |
| KR102173801B1 (ko) | 2012-07-12 | 2020-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 및 표시 장치의 제작 방법 |
| KR102481056B1 (ko) | 2012-08-10 | 2022-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 장치 |
| US11074025B2 (en) | 2012-09-03 | 2021-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| US8574929B1 (en) | 2012-11-16 | 2013-11-05 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
| US8686428B1 (en) | 2012-11-16 | 2014-04-01 | Monolithic 3D Inc. | Semiconductor device and structure |
| DE102012024949B4 (de) * | 2012-12-19 | 2019-02-07 | Audi Ag | Anzeigevorrichtung für ein Fahrzeug und Fahrzeug |
| US11309292B2 (en) | 2012-12-22 | 2022-04-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US11018116B2 (en) | 2012-12-22 | 2021-05-25 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
| US11961827B1 (en) | 2012-12-22 | 2024-04-16 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US11217565B2 (en) | 2012-12-22 | 2022-01-04 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
| US11967583B2 (en) | 2012-12-22 | 2024-04-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US11916045B2 (en) | 2012-12-22 | 2024-02-27 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US11784169B2 (en) | 2012-12-22 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US12051674B2 (en) | 2012-12-22 | 2024-07-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US8674470B1 (en) | 2012-12-22 | 2014-03-18 | Monolithic 3D Inc. | Semiconductor device and structure |
| US11063024B1 (en) | 2012-12-22 | 2021-07-13 | Monlithic 3D Inc. | Method to form a 3D semiconductor device and structure |
| US10892169B2 (en) | 2012-12-29 | 2021-01-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11004694B1 (en) | 2012-12-29 | 2021-05-11 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US9385058B1 (en) | 2012-12-29 | 2016-07-05 | Monolithic 3D Inc. | Semiconductor device and structure |
| US11087995B1 (en) | 2012-12-29 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10903089B1 (en) | 2012-12-29 | 2021-01-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11430668B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
| US11177140B2 (en) | 2012-12-29 | 2021-11-16 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10651054B2 (en) | 2012-12-29 | 2020-05-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US12249538B2 (en) | 2012-12-29 | 2025-03-11 | Monolithic 3D Inc. | 3D semiconductor device and structure including power distribution grids |
| US10600657B2 (en) | 2012-12-29 | 2020-03-24 | Monolithic 3D Inc | 3D semiconductor device and structure |
| US9871034B1 (en) | 2012-12-29 | 2018-01-16 | Monolithic 3D Inc. | Semiconductor device and structure |
| US10115663B2 (en) | 2012-12-29 | 2018-10-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11430667B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
| US20150353005A1 (en) * | 2013-01-11 | 2015-12-10 | Yanfeng Global Automotive Interior Systems Co., Ltd | Thin overhead console |
| KR101796812B1 (ko) * | 2013-02-15 | 2017-11-10 | 엘지디스플레이 주식회사 | 플렉서블 유기 발광 표시 장치 및 플렉서블 유기 발광 표시 장치 제조 방법 |
| WO2014129519A1 (en) * | 2013-02-20 | 2014-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method, semiconductor device, and peeling apparatus |
| US10325651B2 (en) | 2013-03-11 | 2019-06-18 | Monolithic 3D Inc. | 3D semiconductor device with stacked memory |
| US8902663B1 (en) | 2013-03-11 | 2014-12-02 | Monolithic 3D Inc. | Method of maintaining a memory state |
| US11935949B1 (en) | 2013-03-11 | 2024-03-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
| US12094965B2 (en) | 2013-03-11 | 2024-09-17 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
| US11869965B2 (en) | 2013-03-11 | 2024-01-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
| US11088130B2 (en) | 2014-01-28 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11923374B2 (en) | 2013-03-12 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US12100646B2 (en) | 2013-03-12 | 2024-09-24 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
| US11398569B2 (en) | 2013-03-12 | 2022-07-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10840239B2 (en) | 2014-08-26 | 2020-11-17 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US8994404B1 (en) | 2013-03-12 | 2015-03-31 | Monolithic 3D Inc. | Semiconductor device and structure |
| US10224279B2 (en) | 2013-03-15 | 2019-03-05 | Monolithic 3D Inc. | Semiconductor device and structure |
| US9117749B1 (en) | 2013-03-15 | 2015-08-25 | Monolithic 3D Inc. | Semiconductor device and structure |
| CN103208561B (zh) * | 2013-03-22 | 2016-04-20 | 中国科学院上海高等研究院 | 一种柔性薄膜太阳能电池及其制备方法 |
| US11341309B1 (en) | 2013-04-15 | 2022-05-24 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
| US11487928B2 (en) | 2013-04-15 | 2022-11-01 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
| US11574109B1 (en) | 2013-04-15 | 2023-02-07 | Monolithic 3D Inc | Automation methods for 3D integrated circuits and devices |
| US11270055B1 (en) | 2013-04-15 | 2022-03-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
| US9021414B1 (en) | 2013-04-15 | 2015-04-28 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
| US11720736B2 (en) | 2013-04-15 | 2023-08-08 | Monolithic 3D Inc. | Automation methods for 3D integrated circuits and devices |
| US11030371B2 (en) | 2013-04-15 | 2021-06-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
| KR101484229B1 (ko) | 2013-07-24 | 2015-01-16 | 현대자동차 주식회사 | 차량용 터치 디스플레이 장치 및 그 구동 방법 |
| US9356049B2 (en) * | 2013-07-26 | 2016-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device with a transistor on an outer side of a bent portion |
| CN105474355B (zh) | 2013-08-06 | 2018-11-13 | 株式会社半导体能源研究所 | 剥离方法 |
| TWI777433B (zh) | 2013-09-06 | 2022-09-11 | 日商半導體能源研究所股份有限公司 | 發光裝置以及發光裝置的製造方法 |
| US9937698B2 (en) | 2013-11-06 | 2018-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and light-emitting device |
| KR102315659B1 (ko) | 2013-11-27 | 2021-10-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| CN106663391B (zh) | 2013-12-02 | 2019-09-03 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
| KR102132697B1 (ko) | 2013-12-05 | 2020-07-10 | 엘지디스플레이 주식회사 | 휘어진 디스플레이 장치 |
| CN103700662B (zh) * | 2013-12-09 | 2017-02-15 | 京东方科技集团股份有限公司 | 一种承载基板和柔性显示器件制作方法 |
| WO2015087192A1 (en) | 2013-12-12 | 2015-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and peeling apparatus |
| US9397149B2 (en) | 2013-12-27 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6327437B2 (ja) * | 2014-01-10 | 2018-05-23 | 日本電気硝子株式会社 | 電子デバイスの製造方法 |
| US11107808B1 (en) | 2014-01-28 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11031394B1 (en) | 2014-01-28 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US12094829B2 (en) | 2014-01-28 | 2024-09-17 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10297586B2 (en) | 2015-03-09 | 2019-05-21 | Monolithic 3D Inc. | Methods for processing a 3D semiconductor device |
| DE102014202985B4 (de) * | 2014-02-19 | 2018-07-12 | 4Jet Microtech Gmbh & Co. Kg | Herstellung von elektronischen Bauteilen auf einem Substrat |
| KR102334815B1 (ko) | 2014-02-19 | 2021-12-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 박리 방법 |
| US9983619B2 (en) * | 2014-02-28 | 2018-05-29 | Fujitsu Ten Limited | Image display apparatus |
| CN104908661B (zh) * | 2014-03-12 | 2017-09-08 | 华创车电技术中心股份有限公司 | 互动式车用系统 |
| TWI764064B (zh) | 2014-03-13 | 2022-05-11 | 日商半導體能源研究所股份有限公司 | 撓性裝置 |
| DE112015001780B4 (de) | 2014-04-11 | 2022-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Lichtemittierende Vorrichtung |
| TWI695525B (zh) | 2014-07-25 | 2020-06-01 | 日商半導體能源研究所股份有限公司 | 剝離方法、發光裝置、模組以及電子裝置 |
| WO2016059497A1 (en) | 2014-10-17 | 2016-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, module, electronic device, and method for manufacturing light-emitting device |
| JP6634283B2 (ja) | 2014-12-29 | 2020-01-22 | 株式会社半導体エネルギー研究所 | 機能パネル |
| EP3057149A1 (en) * | 2015-02-11 | 2016-08-17 | Nitto Europe N.V | Kits comprising TOLED-containing multilayer films for providing windows with an image display |
| KR102309091B1 (ko) * | 2015-03-02 | 2021-10-07 | 삼성디스플레이 주식회사 | 오토모티브 표시 장치 |
| US11011507B1 (en) | 2015-04-19 | 2021-05-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11056468B1 (en) | 2015-04-19 | 2021-07-06 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US11937422B2 (en) | 2015-11-07 | 2024-03-19 | Monolithic 3D Inc. | Semiconductor memory device and structure |
| US12016181B2 (en) | 2015-10-24 | 2024-06-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
| US11296115B1 (en) | 2015-10-24 | 2022-04-05 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US12477752B2 (en) | 2015-09-21 | 2025-11-18 | Monolithic 3D Inc. | 3D semiconductor memory devices and structures |
| US12219769B2 (en) | 2015-10-24 | 2025-02-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
| US10381328B2 (en) | 2015-04-19 | 2019-08-13 | Monolithic 3D Inc. | Semiconductor device and structure |
| US12615784B2 (en) | 2015-11-07 | 2026-04-28 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US11114427B2 (en) | 2015-11-07 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor processor and memory device and structure |
| US12035531B2 (en) | 2015-10-24 | 2024-07-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
| US11978731B2 (en) | 2015-09-21 | 2024-05-07 | Monolithic 3D Inc. | Method to produce a multi-level semiconductor memory device and structure |
| US11114464B2 (en) | 2015-10-24 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| US10418369B2 (en) | 2015-10-24 | 2019-09-17 | Monolithic 3D Inc. | Multi-level semiconductor memory device and structure |
| US10847540B2 (en) | 2015-10-24 | 2020-11-24 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
| US10825779B2 (en) | 2015-04-19 | 2020-11-03 | Monolithic 3D Inc. | 3D semiconductor device and structure |
| KR102632066B1 (ko) | 2015-07-30 | 2024-02-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치의 제작 방법, 발광 장치, 모듈, 및 전자 기기 |
| US11956952B2 (en) | 2015-08-23 | 2024-04-09 | Monolithic 3D Inc. | Semiconductor memory device and structure |
| US12178055B2 (en) | 2015-09-21 | 2024-12-24 | Monolithic 3D Inc. | 3D semiconductor memory devices and structures |
| DE112016004265T5 (de) | 2015-09-21 | 2018-06-07 | Monolithic 3D Inc. | 3d halbleitervorrichtung und -struktur |
| US12100658B2 (en) | 2015-09-21 | 2024-09-24 | Monolithic 3D Inc. | Method to produce a 3D multilayer semiconductor device and structure |
| US12250830B2 (en) | 2015-09-21 | 2025-03-11 | Monolithic 3D Inc. | 3D semiconductor memory devices and structures |
| US10522225B1 (en) | 2015-10-02 | 2019-12-31 | Monolithic 3D Inc. | Semiconductor device with non-volatile memory |
| US11991884B1 (en) | 2015-10-24 | 2024-05-21 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
| US12120880B1 (en) | 2015-10-24 | 2024-10-15 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
| KR102476563B1 (ko) * | 2015-12-01 | 2022-12-12 | 엘지디스플레이 주식회사 | 표시장치 |
| DE102015015630A1 (de) * | 2015-12-03 | 2017-06-08 | Audi Ag | Vorrichtung zur Anordnung in einem Kraftfahrzeug, Kraftfahrzeug mit einer Vorrichtung und Verfahren zum Betreiben einer Vorrichtung |
| FR3045505B1 (fr) * | 2015-12-16 | 2017-12-22 | Saint Gobain | Pare-brise feuillete de vehicule avec signaletique lumineuse interne. |
| JP6568474B2 (ja) * | 2015-12-25 | 2019-08-28 | 株式会社ショーワ | ベーンポンプ装置 |
| US10259207B2 (en) | 2016-01-26 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming separation starting point and separation method |
| US10586817B2 (en) | 2016-03-24 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and separation apparatus |
| JP2017185924A (ja) * | 2016-04-06 | 2017-10-12 | 矢崎総業株式会社 | 車両用表示装置 |
| JP6863803B2 (ja) | 2016-04-07 | 2021-04-21 | 株式会社半導体エネルギー研究所 | 表示装置 |
| DE102016004581A1 (de) * | 2016-04-14 | 2017-10-19 | Man Truck & Bus Ag | Fahrzeug, insbesondere Nutzfahrzeug, mit einem Spiegelersatzsystem |
| US10535572B2 (en) * | 2016-04-15 | 2020-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device arrangement structure assembly and test method |
| KR101806892B1 (ko) * | 2016-05-09 | 2018-01-10 | 엘지전자 주식회사 | 차량용 제어장치 |
| JP6940974B2 (ja) * | 2016-05-10 | 2021-09-29 | 株式会社半導体エネルギー研究所 | 移動体 |
| US10185190B2 (en) | 2016-05-11 | 2019-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device, module, and electronic device |
| JP6670683B2 (ja) * | 2016-06-07 | 2020-03-25 | 株式会社Screenラミナテック | キャリア基板と樹脂層からなるワークの分離方法および分離装置 |
| WO2018020333A1 (en) | 2016-07-29 | 2018-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, display device, display module, and electronic device |
| TW201808628A (zh) | 2016-08-09 | 2018-03-16 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| US11930648B1 (en) | 2016-10-10 | 2024-03-12 | Monolithic 3D Inc. | 3D memory devices and structures with metal layers |
| US11251149B2 (en) | 2016-10-10 | 2022-02-15 | Monolithic 3D Inc. | 3D memory device and structure |
| US11711928B2 (en) | 2016-10-10 | 2023-07-25 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
| US11812620B2 (en) | 2016-10-10 | 2023-11-07 | Monolithic 3D Inc. | 3D DRAM memory devices and structures with control circuits |
| US12225704B2 (en) | 2016-10-10 | 2025-02-11 | Monolithic 3D Inc. | 3D memory devices and structures with memory arrays and metal layers |
| US11329059B1 (en) | 2016-10-10 | 2022-05-10 | Monolithic 3D Inc. | 3D memory devices and structures with thinned single crystal substrates |
| US11869591B2 (en) | 2016-10-10 | 2024-01-09 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
| WO2018083568A1 (en) * | 2016-11-03 | 2018-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| CN106711348B (zh) * | 2016-12-29 | 2020-05-12 | 上海天马微电子有限公司 | 一种柔性有机发光显示面板的制备方法及显示装置 |
| KR102445875B1 (ko) | 2017-01-03 | 2022-09-21 | 코닝 인코포레이티드 | 만곡된 커버 유리 및 디스플레이 또는 터치 패널을 갖는 차량 인테리어 시스템 및 이를 형성시키는 방법 |
| KR102723083B1 (ko) * | 2017-01-17 | 2024-10-29 | 세키스이가가쿠 고교가부시키가이샤 | 충전 접합재, 보호 시트 부착 충전 접합재, 적층체, 광학 디바이스 및 광학 디바이스용 보호 패널 |
| JP7079239B2 (ja) | 2017-03-03 | 2022-06-01 | 株式会社半導体エネルギー研究所 | 車両 |
| DE112018001677T5 (de) * | 2017-03-31 | 2019-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung und Herstellungsverfahren dieser |
| JP6416307B2 (ja) * | 2017-04-07 | 2018-10-31 | パイオニア株式会社 | 発光素子 |
| CN117962601A (zh) | 2017-07-18 | 2024-05-03 | 康宁公司 | 复杂弯曲玻璃制品的冷成型 |
| KR102426365B1 (ko) | 2017-08-21 | 2022-07-29 | 삼성전자 주식회사 | 안테나를 포함하는 전자 장치 |
| KR102404974B1 (ko) | 2017-09-12 | 2022-06-03 | 삼성디스플레이 주식회사 | 표시 장치 |
| EP3681847B1 (en) | 2017-09-12 | 2025-01-29 | Corning Incorporated | Tactile elements for deadfronted glass and methods of making the same |
| US11065960B2 (en) | 2017-09-13 | 2021-07-20 | Corning Incorporated | Curved vehicle displays |
| JP2019061130A (ja) * | 2017-09-27 | 2019-04-18 | 株式会社ジャパンディスプレイ | 表示装置および表示装置の製造方法 |
| TWI844520B (zh) | 2017-10-10 | 2024-06-11 | 美商康寧公司 | 具有改善可靠性的彎曲的覆蓋玻璃的車輛內部系統及其形成方法 |
| KR102647373B1 (ko) * | 2018-01-04 | 2024-03-13 | 하만 베커 오토모티브 시스템즈 게엠베하 | 물질 투과 조명 |
| CN108297692B (zh) * | 2018-03-28 | 2023-10-20 | 东莞市银泰丰光学科技有限公司 | 一种车载仪表盘结构及其指示方法 |
| KR102494763B1 (ko) * | 2018-05-11 | 2023-02-02 | 삼성디스플레이 주식회사 | 합착 장치 및 이를 이용한 표시장치의 합착 방법 |
| CN108877521A (zh) * | 2018-06-28 | 2018-11-23 | 京东方科技集团股份有限公司 | 信息显示器和信息显示装置 |
| CN109238652B (zh) * | 2018-07-25 | 2020-06-30 | 武汉华星光电半导体显示技术有限公司 | 一种遮光板 |
| US10634305B1 (en) | 2018-10-31 | 2020-04-28 | Putco, Inc. | Programmable automobile light bar |
| JP7154592B2 (ja) * | 2019-01-29 | 2022-10-18 | 株式会社ブイ・テクノロジー | レーザアニール方法およびレーザアニール装置 |
| US10892016B1 (en) | 2019-04-08 | 2021-01-12 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
| US11763864B2 (en) | 2019-04-08 | 2023-09-19 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures with bit-line pillars |
| US11158652B1 (en) | 2019-04-08 | 2021-10-26 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
| US11018156B2 (en) | 2019-04-08 | 2021-05-25 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
| US11296106B2 (en) | 2019-04-08 | 2022-04-05 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
| CN111204285B (zh) * | 2020-03-11 | 2025-02-14 | 深圳市思坦科技有限公司 | 一种汽车显示系统和汽车 |
| KR20220092664A (ko) * | 2020-12-24 | 2022-07-04 | 삼성디스플레이 주식회사 | 윈도우 및 이의 제조 방법 |
| DE112022002460T5 (de) | 2021-05-07 | 2024-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
| CN116631290A (zh) * | 2023-05-29 | 2023-08-22 | 京东方科技集团股份有限公司 | 一种柔性显示模组、车载曲面显示模组以及车辆 |
| CN119165726B (zh) * | 2024-11-19 | 2025-03-14 | 宁波大学 | 微纳结构转印制备方法及其应用 |
Family Cites Families (222)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3322382A1 (de) * | 1983-06-22 | 1985-01-10 | Preh, Elektrofeinmechanische Werke Jakob Preh Nachf. Gmbh & Co, 8740 Bad Neustadt | Verfahren zur herstellung von gedruckten schaltungen |
| GB8617866D0 (en) | 1986-07-22 | 1986-08-28 | Raychem Ltd | Liquid crystal display |
| JPH02500051A (ja) | 1987-07-22 | 1990-01-11 | レイケム・コーポレイション | 電気的に作動可能な表示器 |
| US4883561A (en) * | 1988-03-29 | 1989-11-28 | Bell Communications Research, Inc. | Lift-off and subsequent bonding of epitaxial films |
| JPH01253190A (ja) * | 1988-03-31 | 1989-10-09 | Nec Kansai Ltd | Elパネルの製造方法 |
| JPH02257618A (ja) * | 1989-03-29 | 1990-10-18 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP2820965B2 (ja) * | 1989-08-04 | 1998-11-05 | 株式会社リコー | 曲面液晶表示装置 |
| JPH0410391A (ja) * | 1990-04-26 | 1992-01-14 | Nec Kansai Ltd | 電界発光灯の製造方法 |
| US5206749A (en) | 1990-12-31 | 1993-04-27 | Kopin Corporation | Liquid crystal display having essentially single crystal transistors pixels and driving circuits |
| US6072445A (en) | 1990-12-31 | 2000-06-06 | Kopin Corporation | Head mounted color display system |
| US5396304A (en) * | 1990-12-31 | 1995-03-07 | Kopin Corporation | Slide projector mountable light valve display |
| US5528397A (en) | 1991-12-03 | 1996-06-18 | Kopin Corporation | Single crystal silicon transistors for display panels |
| US5256562A (en) | 1990-12-31 | 1993-10-26 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
| US5258320A (en) | 1990-12-31 | 1993-11-02 | Kopin Corporation | Single crystal silicon arrayed devices for display panels |
| US5661371A (en) | 1990-12-31 | 1997-08-26 | Kopin Corporation | Color filter system for light emitting display panels |
| US6143582A (en) * | 1990-12-31 | 2000-11-07 | Kopin Corporation | High density electronic circuit modules |
| US5376979A (en) | 1990-12-31 | 1994-12-27 | Kopin Corporation | Slide projector mountable light valve display |
| US5258325A (en) | 1990-12-31 | 1993-11-02 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
| US5444557A (en) | 1990-12-31 | 1995-08-22 | Kopin Corporation | Single crystal silicon arrayed devices for projection displays |
| US5475514A (en) | 1990-12-31 | 1995-12-12 | Kopin Corporation | Transferred single crystal arrayed devices including a light shield for projection displays |
| US6593978B2 (en) | 1990-12-31 | 2003-07-15 | Kopin Corporation | Method for manufacturing active matrix liquid crystal displays |
| US5362671A (en) | 1990-12-31 | 1994-11-08 | Kopin Corporation | Method of fabricating single crystal silicon arrayed devices for display panels |
| US5317436A (en) * | 1990-12-31 | 1994-05-31 | Kopin Corporation | A slide assembly for projector with active matrix moveably mounted to housing |
| US6627953B1 (en) | 1990-12-31 | 2003-09-30 | Kopin Corporation | High density electronic circuit modules |
| US5743614A (en) * | 1990-12-31 | 1998-04-28 | Kopin Corporation | Housing assembly for a matrix display |
| US5499124A (en) * | 1990-12-31 | 1996-03-12 | Vu; Duy-Phach | Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material |
| US7075501B1 (en) | 1990-12-31 | 2006-07-11 | Kopin Corporation | Head mounted display system |
| US5861929A (en) * | 1990-12-31 | 1999-01-19 | Kopin Corporation | Active matrix color display with multiple cells and connection through substrate |
| US6320568B1 (en) | 1990-12-31 | 2001-11-20 | Kopin Corporation | Control system for display panels |
| US5666175A (en) | 1990-12-31 | 1997-09-09 | Kopin Corporation | Optical systems for displays |
| US5331149A (en) | 1990-12-31 | 1994-07-19 | Kopin Corporation | Eye tracking system having an array of photodetectors aligned respectively with an array of pixels |
| US5300788A (en) | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
| US5751261A (en) * | 1990-12-31 | 1998-05-12 | Kopin Corporation | Control system for display panels |
| US5376561A (en) | 1990-12-31 | 1994-12-27 | Kopin Corporation | High density electronic circuit modules |
| JPH0590623A (ja) | 1991-09-28 | 1993-04-09 | Nissha Printing Co Ltd | 太陽電池用転写材 |
| JP2837007B2 (ja) * | 1991-10-24 | 1998-12-14 | 株式会社デンソー | Elディスプレイ素子 |
| JP2701629B2 (ja) * | 1991-11-01 | 1998-01-21 | カシオ計算機株式会社 | 液晶表示装置およびその製造方法 |
| US5420055A (en) | 1992-01-22 | 1995-05-30 | Kopin Corporation | Reduction of parasitic effects in floating body MOSFETs |
| JP3736770B2 (ja) | 1992-01-22 | 2006-01-18 | コピン・コーポレーシヨン | 映写表示のための単結晶シリコンアレイデバイス |
| US5467154A (en) | 1992-02-20 | 1995-11-14 | Kopin Corporation | Projection monitor |
| US5692820A (en) | 1992-02-20 | 1997-12-02 | Kopin Corporation | Projection monitor |
| US6511187B1 (en) * | 1992-02-20 | 2003-01-28 | Kopin Corporation | Method of fabricating a matrix display system |
| EP0909972A3 (en) | 1992-03-13 | 1999-06-09 | Kopin Corporation | Method of forming a high resolution liquid crystal display device |
| JPH05347186A (ja) | 1992-06-12 | 1993-12-27 | Clarion Co Ltd | エレクトロルミネセンス・ディスプレイ |
| JP3242452B2 (ja) * | 1992-06-19 | 2001-12-25 | 三菱電機株式会社 | 薄膜太陽電池の製造方法 |
| US5309709A (en) | 1992-06-25 | 1994-05-10 | Solar Turbines Incorporated | Low emission combustion system for a gas turbine engine |
| EP0853254A3 (en) | 1992-09-11 | 1998-10-14 | Kopin Corporation | Liquid crystal display |
| EP0659282B1 (en) | 1992-09-11 | 1998-11-25 | Kopin Corporation | Color filter system for display panels |
| US5705424A (en) * | 1992-09-11 | 1998-01-06 | Kopin Corporation | Process of fabricating active matrix pixel electrodes |
| US6608654B2 (en) | 1992-09-11 | 2003-08-19 | Kopin Corporation | Methods of fabricating active matrix pixel electrodes |
| WO1994010794A1 (en) | 1992-11-04 | 1994-05-11 | Kopin Corporation | Control system for projection displays |
| US5781164A (en) | 1992-11-04 | 1998-07-14 | Kopin Corporation | Matrix display systems |
| JP3238223B2 (ja) * | 1993-01-20 | 2001-12-10 | 株式会社東芝 | 液晶表示装置および表示装置 |
| TW241377B (zh) * | 1993-03-12 | 1995-02-21 | Semiconductor Energy Res Co Ltd | |
| IT1272109B (it) | 1993-03-19 | 1997-06-11 | Eniricerche Spa | Processo per la preparazione di apg |
| JPH06280026A (ja) | 1993-03-24 | 1994-10-04 | Semiconductor Energy Lab Co Ltd | 成膜装置及び成膜方法 |
| JPH06295787A (ja) * | 1993-04-05 | 1994-10-21 | Fuji Electric Co Ltd | 薄膜発光素子 |
| US5589406A (en) | 1993-07-30 | 1996-12-31 | Ag Technology Co., Ltd. | Method of making TFT display |
| JPH0792501A (ja) * | 1993-07-30 | 1995-04-07 | A G Technol Kk | 画像表示用の基板とその製造方法、およびtft表示素子 |
| KR100333153B1 (ko) * | 1993-09-07 | 2002-12-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
| JPH07109573A (ja) * | 1993-10-12 | 1995-04-25 | Semiconductor Energy Lab Co Ltd | ガラス基板および加熱処理方法 |
| JP3094267B2 (ja) * | 1993-10-28 | 2000-10-03 | プリンス コーポレイション | 自動車のページング表示システム |
| JPH07142570A (ja) | 1993-11-12 | 1995-06-02 | Ube Ind Ltd | 複合半導体基板及びその製造方法 |
| KR100321541B1 (ko) | 1994-03-09 | 2002-06-20 | 야마자끼 순페이 | 능동 매트릭스 디스플레이 장치의 작동 방법 |
| JP3150840B2 (ja) * | 1994-03-11 | 2001-03-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| DE4415132C2 (de) * | 1994-04-29 | 1997-03-20 | Siemens Ag | Verfahren zur formgebenden Bearbeitung von dünnen Wafern und Solarzellen aus kristallinem Silizium |
| KR100213603B1 (ko) * | 1994-12-28 | 1999-08-02 | 가나이 쯔또무 | 전자회로기판의 배선수정방법 및 그 장치와 전자회로기판 |
| JP3698749B2 (ja) | 1995-01-11 | 2005-09-21 | 株式会社半導体エネルギー研究所 | 液晶セルの作製方法およびその作製装置、液晶セルの生産システム |
| JP3364081B2 (ja) | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5757456A (en) * | 1995-03-10 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating involving peeling circuits from one substrate and mounting on other |
| US5834327A (en) | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
| JP4063896B2 (ja) | 1995-06-20 | 2008-03-19 | 株式会社半導体エネルギー研究所 | 有色シースルー光起電力装置 |
| JP3493534B2 (ja) * | 1995-07-07 | 2004-02-03 | カシオ計算機株式会社 | 液晶表示素子 |
| US5907770A (en) * | 1995-07-19 | 1999-05-25 | Semiconductor Energy Laboratory Co., | Method for producing semiconductor device |
| US5817548A (en) | 1995-11-10 | 1998-10-06 | Sony Corporation | Method for fabricating thin film transistor device |
| DE19547691C1 (de) * | 1995-12-20 | 1997-04-24 | Lohmann Therapie Syst Lts | Verfahren zur Herstellung transdermaler therapeutischer Pflaster (TTS) |
| JPH09297316A (ja) * | 1996-05-08 | 1997-11-18 | Hitachi Ltd | 液晶装置 |
| EP0842592B1 (en) | 1996-05-28 | 2001-10-10 | Koninklijke Philips Electronics N.V. | Organic electroluminescent device |
| US6550949B1 (en) * | 1996-06-13 | 2003-04-22 | Gentex Corporation | Systems and components for enhancing rear vision from a vehicle |
| AU3249997A (en) | 1996-07-01 | 1998-01-21 | Biosignal Inc. | Method of assaying compounds which affect the activity of g protein-coupled receptors based on measurement of receptor oligomerization |
| JPH1020293A (ja) * | 1996-07-03 | 1998-01-23 | Omron Corp | 表示装置 |
| US6027958A (en) * | 1996-07-11 | 2000-02-22 | Kopin Corporation | Transferred flexible integrated circuit |
| JP3236223B2 (ja) | 1996-08-13 | 2001-12-10 | 東光電気株式会社 | トランスの励磁突流抑制回路 |
| JP3809681B2 (ja) | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
| JP3809712B2 (ja) | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜デバイスの転写方法 |
| JP4619461B2 (ja) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜デバイスの転写方法、及びデバイスの製造方法 |
| JP4619462B2 (ja) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
| KR100481994B1 (ko) * | 1996-08-27 | 2005-12-01 | 세이코 엡슨 가부시키가이샤 | 박리방법,박막디바이스의전사방법,및그것을이용하여제조되는박막디바이스,박막집적회로장치및액정표시장치 |
| JP3420590B2 (ja) | 1996-11-11 | 2003-06-23 | 触媒化成工業株式会社 | 基材の平坦化方法、被膜付基材および半導体装置の製造方法 |
| US6127199A (en) * | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
| USRE38466E1 (en) * | 1996-11-12 | 2004-03-16 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
| JP3899566B2 (ja) * | 1996-11-25 | 2007-03-28 | セイコーエプソン株式会社 | 有機el表示装置の製造方法 |
| JP3393979B2 (ja) * | 1997-07-01 | 2003-04-07 | 松下電器産業株式会社 | 画像表示パネルと画像表示装置およびそれを用いた投射型表示装置とビューファインダ |
| US6219113B1 (en) | 1996-12-17 | 2001-04-17 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for driving an active matrix display panel |
| EP0849788B1 (en) * | 1996-12-18 | 2004-03-10 | Canon Kabushiki Kaisha | Process for producing semiconductor article by making use of a substrate having a porous semiconductor layer |
| US6013982A (en) | 1996-12-23 | 2000-01-11 | The Trustees Of Princeton University | Multicolor display devices |
| US5981306A (en) * | 1997-09-12 | 1999-11-09 | The Trustees Of Princeton University | Method for depositing indium tin oxide layers in organic light emitting devices |
| EP0851513B1 (en) * | 1996-12-27 | 2007-11-21 | Canon Kabushiki Kaisha | Method of producing semiconductor member and method of producing solar cell |
| US5856030A (en) | 1996-12-30 | 1999-01-05 | E.L. Specialists, Inc. | Elastomeric electroluminescent lamp |
| US6013346A (en) * | 1997-01-28 | 2000-01-11 | Buztronics, Inc. | Display sticker with integral flasher circuit and power source |
| JPH10223608A (ja) * | 1997-02-04 | 1998-08-21 | Sony Corp | 半導体装置の製造方法 |
| DE19708610A1 (de) | 1997-03-03 | 1998-09-24 | Siemens Ag | Pixel-Matrix-Anzeigeeinrichtung für Transportsysteme |
| CN2299363Y (zh) * | 1997-03-24 | 1998-12-02 | 张桐城 | 新型塑料薄膜场致发光屏 |
| CA2233096C (en) * | 1997-03-26 | 2003-01-07 | Canon Kabushiki Kaisha | Substrate and production method thereof |
| US6356376B1 (en) * | 1997-04-02 | 2002-03-12 | Gentex Corporation | Electrochromic rearview mirror incorporating a third surface metal reflector and a display/signal light |
| US6033974A (en) * | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
| JPH1174075A (ja) * | 1997-06-19 | 1999-03-16 | Tdk Corp | 有機el表示装置 |
| JPH1126733A (ja) | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置,アクティブマトリクス基板、液晶表示装置および電子機器 |
| US5956181A (en) | 1997-07-18 | 1999-09-21 | Lin; William | Two way mirror with dual functions of rear view mirror and video displayer |
| JP3878288B2 (ja) * | 1997-07-28 | 2007-02-07 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| KR19980024117A (ko) | 1997-07-30 | 1998-07-06 | 이영선 | 자연석을 이용한 건축재 및 그 제조방법 |
| JPH1187799A (ja) | 1997-09-12 | 1999-03-30 | Matsushita Electric Ind Co Ltd | 磁気抵抗素子とその製造方法 |
| JP3392729B2 (ja) | 1997-09-30 | 2003-03-31 | 株式会社東芝 | 折り畳み型液晶表示装置 |
| JPH11121751A (ja) * | 1997-10-13 | 1999-04-30 | Sanyo Electric Co Ltd | 薄膜半導体装置の製造方法 |
| JP3139426B2 (ja) * | 1997-10-15 | 2001-02-26 | 日本電気株式会社 | 半導体装置 |
| JPH11135882A (ja) * | 1997-10-28 | 1999-05-21 | Sharp Corp | 化合物半導体基板、及び化合物半導体基板の製造方法、並びに発光素子 |
| DE69732776T2 (de) | 1997-11-17 | 2006-04-06 | Molex Inc., Lisle | Elektrolumineszierende Lampe und Verfahren zur Herstellung |
| US5934327A (en) * | 1997-11-26 | 1999-08-10 | Goddard Valve Corporation | Valve for cryogenic fluid |
| JPH11160734A (ja) * | 1997-11-28 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 液晶電気光学装置 |
| US6306729B1 (en) * | 1997-12-26 | 2001-10-23 | Canon Kabushiki Kaisha | Semiconductor article and method of manufacturing the same |
| AU2492399A (en) | 1998-02-02 | 1999-08-16 | Uniax Corporation | Image sensors made from organic semiconductors |
| US6476783B2 (en) * | 1998-02-17 | 2002-11-05 | Sarnoff Corporation | Contrast enhancement for an electronic display device by using a black matrix and lens array on outer surface of display |
| JP3809733B2 (ja) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜トランジスタの剥離方法 |
| JP4126747B2 (ja) * | 1998-02-27 | 2008-07-30 | セイコーエプソン株式会社 | 3次元デバイスの製造方法 |
| JPH11272205A (ja) * | 1998-03-19 | 1999-10-08 | Toshiba Corp | 表示装置 |
| US6329925B1 (en) * | 1999-11-24 | 2001-12-11 | Donnelly Corporation | Rearview mirror assembly with added feature modular display |
| JP3844613B2 (ja) * | 1998-04-28 | 2006-11-15 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ回路およびそれを用いた表示装置 |
| JP3619058B2 (ja) * | 1998-06-18 | 2005-02-09 | キヤノン株式会社 | 半導体薄膜の製造方法 |
| US6423614B1 (en) * | 1998-06-30 | 2002-07-23 | Intel Corporation | Method of delaminating a thin film using non-thermal techniques |
| JP2000243970A (ja) * | 1999-02-24 | 2000-09-08 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法 |
| US6479837B1 (en) | 1998-07-06 | 2002-11-12 | Matsushita Electric Industrial Co., Ltd. | Thin film transistor and liquid crystal display unit |
| US6582996B1 (en) | 1998-07-13 | 2003-06-24 | Fujitsu Limited | Semiconductor thin film forming method |
| US6117797A (en) * | 1998-09-03 | 2000-09-12 | Micron Technology, Inc. | Attachment method for heat sinks and devices involving removal of misplaced encapsulant |
| US6162571A (en) * | 1998-10-02 | 2000-12-19 | Xerox Corporation | Unsymmetrical perylene dimers |
| US6271631B1 (en) | 1998-10-15 | 2001-08-07 | E.L. Specialists, Inc. | Alerting system using elastomeric EL lamp structure |
| JP2000177483A (ja) * | 1998-12-11 | 2000-06-27 | Fujitsu Ten Ltd | 車両の外部監視装置 |
| US6268695B1 (en) * | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
| JP2002536695A (ja) | 1999-02-05 | 2002-10-29 | エイリアン・テクノロジイ・コーポレーション | アセンブリを形成するための装置および方法 |
| EP1041624A1 (en) * | 1999-04-02 | 2000-10-04 | Interuniversitair Microelektronica Centrum Vzw | Method of transferring ultra-thin substrates and application of the method to the manufacture of a multilayer thin film device |
| US6531997B1 (en) * | 1999-04-30 | 2003-03-11 | E Ink Corporation | Methods for addressing electrophoretic displays |
| US6504524B1 (en) * | 2000-03-08 | 2003-01-07 | E Ink Corporation | Addressing methods for displays having zero time-average field |
| US6664169B1 (en) * | 1999-06-08 | 2003-12-16 | Canon Kabushiki Kaisha | Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus |
| JP3804349B2 (ja) * | 1999-08-06 | 2006-08-02 | セイコーエプソン株式会社 | 薄膜デバイス装置の製造方法、アクティブマトリクス基板の製造方法、および電気光学装置 |
| TW487959B (en) | 1999-08-13 | 2002-05-21 | Semiconductor Energy Lab | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
| US6391220B1 (en) * | 1999-08-18 | 2002-05-21 | Fujitsu Limited, Inc. | Methods for fabricating flexible circuit structures |
| JP3624756B2 (ja) | 1999-08-27 | 2005-03-02 | 東陶機器株式会社 | 分析装置 |
| JP2001085715A (ja) * | 1999-09-09 | 2001-03-30 | Canon Inc | 半導体層の分離方法および太陽電池の製造方法 |
| JP2001154592A (ja) | 1999-09-13 | 2001-06-08 | Minolta Co Ltd | 表示装置 |
| JP2001085154A (ja) | 1999-09-16 | 2001-03-30 | Denso Corp | 表示装置 |
| JP4497596B2 (ja) * | 1999-09-30 | 2010-07-07 | 三洋電機株式会社 | 薄膜トランジスタ及び表示装置 |
| TW480722B (en) | 1999-10-12 | 2002-03-21 | Semiconductor Energy Lab | Manufacturing method of electro-optical device |
| JP4780826B2 (ja) * | 1999-10-12 | 2011-09-28 | 株式会社半導体エネルギー研究所 | 電気光学装置の作製方法 |
| US6455397B1 (en) * | 1999-11-16 | 2002-09-24 | Rona E. Belford | Method of producing strained microelectronic and/or optical integrated and discrete devices |
| JP4727029B2 (ja) | 1999-11-29 | 2011-07-20 | 株式会社半導体エネルギー研究所 | El表示装置、電気器具及びel表示装置用の半導体素子基板 |
| JP2001166301A (ja) | 1999-12-06 | 2001-06-22 | Seiko Epson Corp | バックライト内蔵型液晶表示装置及びその製造方法 |
| US6489041B2 (en) | 1999-12-09 | 2002-12-03 | Nippon Telegraph And Telephone Corporation | Magnetic body formed by quantum dot array using non-magnetic semiconductor |
| JP2001177101A (ja) * | 1999-12-20 | 2001-06-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US7768210B2 (en) | 1999-12-22 | 2010-08-03 | General Electric Company | Hybrid electroluminescent devices |
| US6566808B1 (en) | 1999-12-22 | 2003-05-20 | General Electric Company | Luminescent display and method of making |
| US7576496B2 (en) | 1999-12-22 | 2009-08-18 | General Electric Company | AC powered OLED device |
| US20020190661A1 (en) | 2000-01-27 | 2002-12-19 | General Electric Company | AC powered oled device |
| JP4478268B2 (ja) | 1999-12-28 | 2010-06-09 | セイコーエプソン株式会社 | 薄膜デバイスの製造方法 |
| TWI273722B (en) | 2000-01-27 | 2007-02-11 | Gen Electric | Organic light emitting device and method for mounting |
| US6700322B1 (en) | 2000-01-27 | 2004-03-02 | General Electric Company | Light source with organic layer and photoluminescent layer |
| US6515417B1 (en) * | 2000-01-27 | 2003-02-04 | General Electric Company | Organic light emitting device and method for mounting |
| TW494447B (en) * | 2000-02-01 | 2002-07-11 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| JP4712198B2 (ja) * | 2000-02-01 | 2011-06-29 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP4461548B2 (ja) * | 2000-02-02 | 2010-05-12 | 住友化学株式会社 | 有機エレクトロルミネッセンス素子の製造方法および有機エレクトロルミネッセンス素子 |
| US6464381B2 (en) | 2000-02-26 | 2002-10-15 | Federal-Mogul World Wide, Inc. | Vehicle interior lighting systems using electroluminescent panels |
| JP2001318624A (ja) * | 2000-02-29 | 2001-11-16 | Semiconductor Energy Lab Co Ltd | 表示装置およびその作製方法 |
| US6882102B2 (en) * | 2000-02-29 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| TW507258B (en) | 2000-02-29 | 2002-10-21 | Semiconductor Systems Corp | Display device and method for fabricating the same |
| JP4601843B2 (ja) * | 2000-02-29 | 2010-12-22 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP4414553B2 (ja) * | 2000-03-16 | 2010-02-10 | 宇部日東化成株式会社 | 有機−無機ハイブリッド傾斜材料およびその用途 |
| JP2001265251A (ja) | 2000-03-17 | 2001-09-28 | Minolta Co Ltd | 表示素子及び積層型表示素子 |
| JP2001267578A (ja) | 2000-03-17 | 2001-09-28 | Sony Corp | 薄膜半導体装置及びその製造方法 |
| US6777871B2 (en) | 2000-03-31 | 2004-08-17 | General Electric Company | Organic electroluminescent devices with enhanced light extraction |
| US6661029B1 (en) | 2000-03-31 | 2003-12-09 | General Electric Company | Color tunable organic electroluminescent light source |
| US6492026B1 (en) * | 2000-04-20 | 2002-12-10 | Battelle Memorial Institute | Smoothing and barrier layers on high Tg substrates |
| US6611108B2 (en) | 2000-04-26 | 2003-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and driving method thereof |
| JP3265301B2 (ja) * | 2000-06-05 | 2002-03-11 | 株式会社東芝 | 半導体装置とその製造方法 |
| JP2002026182A (ja) * | 2000-07-07 | 2002-01-25 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| TW577813B (en) | 2000-07-10 | 2004-03-01 | Semiconductor Energy Lab | Film forming apparatus and method of manufacturing light emitting device |
| US6867539B1 (en) * | 2000-07-12 | 2005-03-15 | 3M Innovative Properties Company | Encapsulated organic electronic devices and method for making same |
| US6683333B2 (en) * | 2000-07-14 | 2004-01-27 | E Ink Corporation | Fabrication of electronic circuit elements using unpatterned semiconductor layers |
| SG148819A1 (en) * | 2000-09-14 | 2009-01-29 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| JP3974749B2 (ja) | 2000-12-15 | 2007-09-12 | シャープ株式会社 | 機能素子の転写方法 |
| US6774010B2 (en) * | 2001-01-25 | 2004-08-10 | International Business Machines Corporation | Transferable device-containing layer for silicon-on-insulator applications |
| US6448152B1 (en) * | 2001-02-20 | 2002-09-10 | Silicon Genesis Corporation | Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer |
| JP2002328624A (ja) | 2001-04-26 | 2002-11-15 | Sony Corp | 車両用表示装置 |
| CN1212114C (zh) | 2001-04-27 | 2005-07-27 | 昆明制药集团股份有限公司 | 口服灯盏花素缓释制剂 |
| US6649433B2 (en) | 2001-06-26 | 2003-11-18 | Sigma Technologies International, Inc. | Self-healing flexible photonic composites for light sources |
| US6664730B2 (en) * | 2001-07-09 | 2003-12-16 | Universal Display Corporation | Electrode structure of el device |
| US8415208B2 (en) * | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
| US6677254B2 (en) * | 2001-07-23 | 2004-01-13 | Applied Materials, Inc. | Processes for making a barrier between a dielectric and a conductor and products produced therefrom |
| US6814832B2 (en) * | 2001-07-24 | 2004-11-09 | Seiko Epson Corporation | Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance |
| JP2003142666A (ja) | 2001-07-24 | 2003-05-16 | Seiko Epson Corp | 素子の転写方法、素子の製造方法、集積回路、回路基板、電気光学装置、icカード、及び電子機器 |
| JP2003109773A (ja) * | 2001-07-27 | 2003-04-11 | Semiconductor Energy Lab Co Ltd | 発光装置、半導体装置およびそれらの作製方法 |
| JP5057619B2 (ja) | 2001-08-01 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW554398B (en) * | 2001-08-10 | 2003-09-21 | Semiconductor Energy Lab | Method of peeling off and method of manufacturing semiconductor device |
| US6699597B2 (en) * | 2001-08-16 | 2004-03-02 | 3M Innovative Properties Company | Method and materials for patterning of an amorphous, non-polymeric, organic matrix with electrically active material disposed therein |
| JP4209606B2 (ja) * | 2001-08-17 | 2009-01-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW558743B (en) | 2001-08-22 | 2003-10-21 | Semiconductor Energy Lab | Peeling method and method of manufacturing semiconductor device |
| TWI282126B (en) | 2001-08-30 | 2007-06-01 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
| US7112517B2 (en) | 2001-09-10 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Laser treatment device, laser treatment method, and semiconductor device fabrication method |
| US7317205B2 (en) | 2001-09-10 | 2008-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing a semiconductor device |
| US6875671B2 (en) * | 2001-09-12 | 2005-04-05 | Reveo, Inc. | Method of fabricating vertical integrated circuits |
| JP2003091245A (ja) | 2001-09-18 | 2003-03-28 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| US6737753B2 (en) * | 2001-09-28 | 2004-05-18 | Osram Opto Semiconductor Gmbh | Barrier stack |
| KR100944886B1 (ko) * | 2001-10-30 | 2010-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제조 방법 |
| US6851841B2 (en) | 2001-11-28 | 2005-02-08 | Toyoda Gosei Co., Ltd. | Illumination device |
| JP2003229548A (ja) | 2001-11-30 | 2003-08-15 | Semiconductor Energy Lab Co Ltd | 乗物、表示装置、および半導体装置の作製方法 |
| TWI264121B (en) * | 2001-11-30 | 2006-10-11 | Semiconductor Energy Lab | A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device |
| US6953735B2 (en) * | 2001-12-28 | 2005-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device by transferring a layer to a support with curvature |
| US6970747B2 (en) * | 2002-01-11 | 2005-11-29 | Kokones Scott B | Neurostimulation lead stylet handle |
| US6835950B2 (en) | 2002-04-12 | 2004-12-28 | Universal Display Corporation | Organic electronic devices with pressure sensitive adhesive layer |
| TWI272641B (en) * | 2002-07-16 | 2007-02-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| CN1231065C (zh) | 2003-11-14 | 2005-12-07 | 西安交通大学 | 一种天地网远程教育系统的实现方法 |
| US7777611B2 (en) * | 2006-11-06 | 2010-08-17 | Donnelly Corporation | Display device for exterior rearview mirror |
| KR101242094B1 (ko) * | 2008-01-07 | 2013-03-11 | 가부시키가이샤 아이에이치아이 | 레이저 어닐링 방법 및 장치 |
| US8957442B2 (en) * | 2011-02-11 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and display device |
| CN102859986A (zh) * | 2011-02-14 | 2013-01-02 | 松下电器产业株式会社 | 拍摄装置 |
-
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