US4742525A - Coupled laser diode arrangement - Google Patents

Coupled laser diode arrangement Download PDF

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Publication number
US4742525A
US4742525A US06/773,018 US77301885A US4742525A US 4742525 A US4742525 A US 4742525A US 77301885 A US77301885 A US 77301885A US 4742525 A US4742525 A US 4742525A
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United States
Prior art keywords
layer
middle layer
laser
diodes
strip
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Expired - Fee Related
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US06/773,018
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English (en)
Inventor
Jochen Heinen
Markus-Christian Amann
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Siemens AG
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Siemens AG
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Assigned to SIEMENS AKTIENGESELLSCHAFT, A CORP. OF GERMANY reassignment SIEMENS AKTIENGESELLSCHAFT, A CORP. OF GERMANY ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: AMANN, MARKUS-CHRISTIAN, HEINEN, JOCHEN
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

Definitions

  • the present invention relates to a coupled laser diode arrangement of two laser diodes in a layered format.
  • Such a wave-mechanical coupling is exploited, for example, for generating monomode laser radiation.
  • a control is also achieved of the laser beam generation in one zone by intensity variation and/or modification of the excitation conditions of the laser radiation in the other, proximate zone.
  • Jap. Journ. Appl. Phys., Vol. 17 (1978), pages 751-752 and Journ. Quantum Electr., Vol. QE 13 (1977), pages 619-622 both incorporated herein by reference, disclose arrangements which comprise a respective first and second zone lying on top of one another.
  • the other, second zone is a passive optical resonator which is wave-mechanically coupled to the first zone containing the p-n junction.
  • the effective band space in the material of this second zone i.e. in the zone of the passive resonator, is greater than that in the first zone having the p-n junction. If laser radiation were to be generated in this second zone, its frequency would be different from, namely higher, than the frequency of that laser radiation which is in fact generated in this known arrangement, namely in the first zone thereof comprising the p-n junction.
  • the intended wave-mechanical coupling though, would be impossible, i.e. the passive property of this second zone is of decisive significance for this prior art.
  • the longitudinal series placement and the lateral juxtaposition of respective laser-active zones or laser diode strips in an arrangement on or in a substrate body is known from the above publications.
  • the essential problem for the manufacture of such an arrangement is the adjustment of these zones or lasers relative to one another, since even slight spacing deviations have considerable influence.
  • an added problem in index-guided laser diodes is that the spacing dimensions coming into consideration are extremely small due to the low width of the wave-mechanical or wave-optical near field of the laser radiation.
  • the laser diodes are usually laser diodes of the double-hetero structure type of, for example, indium-gallium-arsenide-phosphide/indium phosphide. Particularly given laser diodes of this type, two laser diodes to be coupled to one another can be disposed at a slight distance from one another, even given execution as index-guided laser diodes.
  • An object of the present invention is to specify an arrangement and a manufacturing method for this arrangement wherein reduced technological expense and/or enhanced reliability for the observation of prescribed spacings is achieved.
  • first and second two layer structures on opposite sides of a middle layer so that laser-active zones of the respective two layer structures are positioned across from each other through the middle layer.
  • the middle layer is an epitaxially deposited layer which is precisely dimensioned in terms of its thickness.
  • a principle of the invention is to provide two or more strip-shaped laser-active zones neighboring one another in stacked position on the semiconductor body.
  • the semiconductor bodies of the laser diodes, and in particular those having double-hetero structure, are produced on top of one another by repeated epitaxial deposition of various layers.
  • three layers and a substrate member are usually required, whereby the substrate member can also assume the function of one of the layers.
  • the laser-active zone is at least largely situated in the region of the respective middle layer (given a 3-layer arrangement), whereby the precise position depends on known fine technological details such as doping degree and, under given conditions, gradient and/or selection of the materials of the layer sequence, and the like.
  • FIGURE illustrates in perspective view an arrangement of the stacked and coupled laser diodes according to the invention.
  • the overall arrangement comprising two coupled laser diodes, which in this example is formed of two coupled, strip-shaped, laser-active zones, is referenced 1.
  • one each of the laser diodes to be coupled to one another is situated above and below a middle layer 2 of, for example In P, and serving as the substrate body.
  • the substrate body is the middle layer 2 and also the first layer of the respective double-hetero structure of the individual diodes to which the layers 31 and 32 as well as 41 and 42 respectively are associated. Two symmetry parts are thus present.
  • these layers 31, 32, 41, 42 are epitaxially deposited and stacked on one another or on the middle layer 2.
  • the layers 31, 32 are composed, for example, of In GaAs P, and the layers 41 and 42 are composed, for example, of In P.
  • the electrical substrate terminal is referenced 5, this, for example, being a strip-shaped contact electrode. Further strip-shaped or surface-shaped electrodes are referenced 6 and 7.
  • the electrical current I 1 , I 2 serving for the laser excitation flows, for example, as shown in the drawing FIGURE.
  • the end-face, cross-sectional surfaces of the respective strip-shaped laser-active zones are referenced 11 and 12. Their spacing from one another is indicated with the arrow A.
  • the substrate 2 is a significant part of the semiconductor material situated between the zones 11 and 12 across which the wave-optical coupling occurs.
  • the thickness of this middle layer 2 for which dimensions of about 0.1 through 0.3 ⁇ m are to be observed, essentially defines the spacing A.
  • the thickness of a layer can be very precisely set or adhered to.
  • the invention offers the assurance of low unit scatter and a low reject rate.
  • the advantage is also produced with the invention that (later) external influences acting on the arrangement 1 cannot influence the spacing-dependent, wave-optical coupling of the zones 11 and 12.
  • the coupling region is hermetically closed off from the outside.
  • An arrangement 1 of the invention is manufactured in that the layers sequenced as seen in the drawing FIGURE are successively epitaxially deposited on top of one another and the semiconductor parts initially arising at the side of the layers 41, 31, 32 and 42 during the deposition are subsequently etched off in an advantageous way. This is carried out with a usually employed mask etching, ion etching, and the like, as is well known to those skilled in this art.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
US06/773,018 1984-09-21 1985-09-06 Coupled laser diode arrangement Expired - Fee Related US4742525A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19843434741 DE3434741A1 (de) 1984-09-21 1984-09-21 Verkoppelte laserdioden-anordnung
DE3434741 1984-09-21

Publications (1)

Publication Number Publication Date
US4742525A true US4742525A (en) 1988-05-03

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Family Applications (1)

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US06/773,018 Expired - Fee Related US4742525A (en) 1984-09-21 1985-09-06 Coupled laser diode arrangement

Country Status (4)

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US (1) US4742525A (fr)
EP (1) EP0175351A3 (fr)
JP (1) JPS6179287A (fr)
DE (1) DE3434741A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030082281A (ko) * 2002-04-17 2003-10-22 엘지전자 주식회사 이중 파장의 광을 방출하는 반도체 레이저 다이오드 및그의 제조방법
US6711191B1 (en) 1999-03-04 2004-03-23 Nichia Corporation Nitride semiconductor laser device
US6835956B1 (en) 1999-02-09 2004-12-28 Nichia Corporation Nitride semiconductor device and manufacturing method thereof
US7365369B2 (en) 1997-06-11 2008-04-29 Nichia Corporation Nitride semiconductor device
US7977687B2 (en) 2008-05-09 2011-07-12 National Chiao Tung University Light emitter device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3708666C2 (de) * 1987-03-17 1997-11-27 Siemens Ag Laseranordnung mit getrennt ansteuerbaren gekoppelten Halbleiterlasern
DE58906978D1 (de) * 1988-09-22 1994-03-24 Siemens Ag Abstimmbarer DFB-Laser.
US4987576A (en) * 1988-11-30 1991-01-22 Siemens Aktiengesellschaft Electrically tunable semiconductor laser with ridge waveguide
JPH07112096B2 (ja) * 1990-11-14 1995-11-29 光計測技術開発株式会社 半導体素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4101845A (en) * 1975-03-29 1978-07-18 Licentia Patent-Verwaltungs-G.M.B.H. Method of and arrangement for producing coherent mode radiation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723291A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device
US4347612A (en) * 1980-08-25 1982-08-31 Xerox Corporation Semiconductor injection laser for high speed modulation
FR2525034A1 (fr) * 1982-04-09 1983-10-14 Carenco Alain Laser a semiconducteur a coupleur directif permettant une sortie laterale
WO1984003399A1 (fr) * 1983-02-25 1984-08-30 American Telephone & Telegraph Dispositif optique a cavites multiples et ses applications

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4101845A (en) * 1975-03-29 1978-07-18 Licentia Patent-Verwaltungs-G.M.B.H. Method of and arrangement for producing coherent mode radiation

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7365369B2 (en) 1997-06-11 2008-04-29 Nichia Corporation Nitride semiconductor device
US8592841B2 (en) 1997-07-25 2013-11-26 Nichia Corporation Nitride semiconductor device
US6835956B1 (en) 1999-02-09 2004-12-28 Nichia Corporation Nitride semiconductor device and manufacturing method thereof
US7083996B2 (en) 1999-02-09 2006-08-01 Nichia Corporation Nitride semiconductor device and manufacturing method thereof
US6711191B1 (en) 1999-03-04 2004-03-23 Nichia Corporation Nitride semiconductor laser device
US7015053B2 (en) 1999-03-04 2006-03-21 Nichia Corporation Nitride semiconductor laser device
US7496124B2 (en) 1999-03-04 2009-02-24 Nichia Corporation Nitride semiconductor laser device
KR20030082281A (ko) * 2002-04-17 2003-10-22 엘지전자 주식회사 이중 파장의 광을 방출하는 반도체 레이저 다이오드 및그의 제조방법
US7977687B2 (en) 2008-05-09 2011-07-12 National Chiao Tung University Light emitter device

Also Published As

Publication number Publication date
EP0175351A3 (fr) 1987-07-29
JPS6179287A (ja) 1986-04-22
DE3434741A1 (de) 1986-04-03
EP0175351A2 (fr) 1986-03-26

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Owner name: SIEMENS AKTIENGESELLSCHAFT, BERLIN AND MUNICH, A C

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:HEINEN, JOCHEN;AMANN, MARKUS-CHRISTIAN;REEL/FRAME:004453/0408

Effective date: 19850828

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Effective date: 19920503

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Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362