US4774198A - Self-aligned process for fabricating small DMOS cells - Google Patents

Self-aligned process for fabricating small DMOS cells Download PDF

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Publication number
US4774198A
US4774198A US07/019,785 US1978587A US4774198A US 4774198 A US4774198 A US 4774198A US 1978587 A US1978587 A US 1978587A US 4774198 A US4774198 A US 4774198A
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layer
silicon
region
polycrystalline silicon
polycrystalline
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Claudio Contiero
Antonio Andreini
Paola Galbiati
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STMicroelectronics SRL
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SGS Microelettronica SpA
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Assigned to SGS MICROELETTRONICA S.P.A., STRADDLE PRIMOSOLE, 50 - 95121 CATANIA, ITALY reassignment SGS MICROELETTRONICA S.P.A., STRADDLE PRIMOSOLE, 50 - 95121 CATANIA, ITALY ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: ANDREINI, ANTONIO, CONTIERO, CLAUDIO, GALBIATI, PAOLA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0293—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using formation of insulating sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Definitions

  • the present invention relates, in general, to the fabrication technology of MOS type semiconductor devices, and, more in particular, to that relative to power VDMOS devices or devices of modulated conductivity either in discrete form or in integrated form, where the symbol VDMOS identifies a MOS structure with horizontal diffused channel and vertical path of the current.
  • VDMOS structure After a protracted evaluation of different structures, the VDMOS structure appears to have been adopted by the manufacturers of semiconductor devices as the structure which, at present, realizes the best compromise in the quest of an ideal power switching device.
  • the ON resistance of a VDMOS device is primarily determined by the value of two resistive contributions: the MOS channel resistance and the resistance of the epitaxial layer.
  • VDMOS cells In practice, the limitation to the reduction of the value of the ON resistance of VDMOS cells power devices, is determined by technological limits of area definition. Obviously, for fabricating such devices, the most sofisticated techniques are utilized, that is the VLSI processes (i.e. Very Large Scale Integration) while the shape of the individual VDMOS cells may be rectangular, square or hexagonal.
  • n channel In the structure of a typical DMOS cell, e.g. n channel, whose channel is obtained by exploiting the difference of lateral diffusion of a "p" dopant and of a "n” dopant under the gate polycrystalline silicon, there exists a more heavily doped p + central region for short circuiting the p body with the n + source (such central region being known with the name of p + short).
  • This region should be as large as possible in the horizontal direction, though it should not encroach into the p region, that is alter the doping level of the p silicon region channel and consequently increase the value of the threshold voltage of the DMOS cell.
  • such a p + short region should extend as far as possible in a horizontal sense in order to lower the gain of the parasitic n + /p/n - transistor which could, under certain circuit situations, interfere and jeopardize the characteristics of the power MOS device or of the equivalent conductivity modulation MOS device.
  • the fabrication process contemplates a first masking for implating boron followed by the formation of the layer of thermally produced gate oxide, by the deposition of polycrystalline silicon, by the definition of the gate polycrystalline silicon, thence followed by a second boron implantation to form silicon regions in the channel regions.
  • an objective of the present invention to provide an improved process of fabricating power MOS devices, according to which the formation of the short circuiting p + region for n channel devices (or n + for p channel devices) between a n + (or p + ) source region and a p (or n) body region takes place under self-alignment conditions with respect to the edge of the gate polycrystalline silicon, thus eliminating the problems connected to the definition of a specific alignment mask and simplifying the fabrication process.
  • a second masking stage using a substantially noncritical mask, allows to define, by means of a "plug" of photoresist material in the middle of the aperture formed through the layer of gate polycrystalline silicon, what will be the contour of the short circuiting zone between the source electrode, the source region and said short circuiting region, as well as the "window” through which the dopant is implanted and subsequently diffused to form the source region of the DMOS cell.
  • the subsequent opening of the source contact is also performed by a self-aligned technique further limiting the number of masks required by the process.
  • the structure of the VDMOS cell of the invention distinguishes itself by the fact that the short circuiting region, having a high doping level, advantageously results practically aligned with the edge of the layer of gate polycrystalline silicon thus reducing the residual base resistance of the parasitic transistor. Moreover, being the contact zone self-aligned with the gate electrode, it is possible to decrease the dimensions of the cells thus increasing the density of integration.
  • FIGS. from 1 to 10 are schematic vertical sections showing the general architecture of a device manufactured in accordance with the process of the present invention after having undergone successive steps of the process in accordance with the present invention. That is, FIG. 2 is a cross-sectional view of the device shown in FIG. 1 after undergoing various processing steps and FIG. 3 is a cross-sectional view of the device shown in FIG. 2 after undergoing other various processing steps, etc.
  • the drain of the VDMOS cell shown in the figures may be formed on the rear of said wafer of substrate, which in such a case will be strongly doped, in the case of discrete devices. Otherwise the drain may be brought to the surface through a buried layer and a sinker diffusion in the case of integrated devices, in accordance with the usual techniques.
  • the process comprises:
  • n - EPI n - monocrystalline silicon
  • LPCVD low pressure vapor phase
  • the opening of the "window" destined to the formation of the DMOS cell is preferably effected by RIE (Reactive Ion Etch) attack in a plasma of CF4+H2 or of CHF3+CO2, under highly anisotropic conditions, without softening the profile of the photoresist mask, in order to produce an opening through the layers of nitride (5), oxide (4 and 2) and of polycrystalline silicon (3) with edges substantially perpendicular to the surface fo the silicon, that is generating a substantially vertical step or anyway comprised preferably between 80° and 90°, as shown in FIG. 2.
  • RIE Reactive Ion Etch
  • Boron atoms may then be implanted for forming a p region 6 obtained by a deep diffusion process, which will constitute the channel region with a maximum boron content of about 5 ⁇ 10 16 atoms/cm 3 .
  • a layer 7 of silicon oxide having a thickness of about 1 micrometer is deposited from vapor phase in a low pressure system under conditions of high conformability and, preferably, the profile of such a layer 7 is softened (planarized) by the known technique of thermally "re-flowing" the oxide at a temperature of about 1050° C., as shown in FIG. 3.
  • a substantially triangular shaped residue 8 of silicon oxide is left on the lateral walls or edges of the polycrystalline silicon layer 3 with the function of a "spacer", which will act as mask for the subsequent boron implantation for forming a p + region 9, entirely contained in the p region 6, formed previously, as shown in FIG. 4.
  • Diffusion of the implanted boron follows to form said p + region 9.
  • the spacers 8 of silicon oxide, along the edge of the polycrystalline silicon layer 3, are removed and the surface of the monocrystalline silicon is thermally oxidized (2) together with the exposed edge of the polycrystalline silicon, for a thickness of about 1000 Angstroms, as shown in FIG. 5.
  • a zone is defined in correspondence of which will be formed the short circuiting contact among the source electrode, the source region and said p + short region, in a substantially central position of the DMOS cell, that is of the window through the layer of gate polycrystalline silicon.
  • the layer of thermal silicon oxide 3 in the unmasked area until exposing the monocrystal, arsenic is implanted to form the n + source region 11; the central "plug" of masking photoresist 10 and the polycrystalline silicon layer 3 constituting the mask for said operation, as shown in FIG. 6.
  • the masking photoresist plug 10 is removed and the implanted arsenic is diffused forming the n + source region 11 and the surface of the crystal is thermally re-oxidized for about 1000 Angstroms.
  • a new layer of silicon oxide 12 having a thickness of about 1 micrometer is deposited conformally and, preferably, the profile is planarized as already described before thus obtaining a section such as the one shown in FIG. 7.
  • the deposited layer of silicon oxide 12 is anisotropically attacked by a RIE system, thus creating the desired spacers 13 along the edge of the polycrystalline silicon layer (gate electrode) which will act as the mask for the subsequent deposition of the metal 14 of the source contact, as shown in FIG. 8.
  • the formation of the source contact is performed with self-alignment techniques, further simplifying the fabrication process of the device.
  • the area destined to the gate contact is defined and the layers of silicon nitride 5 and of the underlying silicon oxide 4 are attacked through the appropriate window in the photoresist mask, until exposing the polycrystalline silicon layer 3, as shown in FIG. 9.
  • the fabrication process proceeds through the customary step of depositing from vapor phase or by sputtering, the metallization layer, preferably using aluminum with a small amount of silicon; of further masking for defining the paths in the metallization layer, and of attacking the latter, followed then by a heat treatment for improving the electric contact at the interface between the metal and the silicon.
  • the section will appear as shown in FIG. 10.
  • the process contemplates further the deposition of passivation and insulation layers and the definition and opening of the pads for the electrical connection of the leads.
  • the process of the invention offers remarkable advantages as compared to the known processes.
  • critical masking steps are substantially eliminated thus making easier to increase the density of integration, for obtaining a low ON resistance of the devices.
  • the forming of the heavily doped short region between the source and body regions takes place under conditions of accurate dimensional control, thus allowing a more precise geometry which permits to enlarge the lateral dimensions of the short region for more efficiently suppressing the parasitic transistor by reducing its residual base resistance, though effectively preventing said short region from extending itself beyond the limit set by the projection of the edge of the polycrystalline silicon of the gate electrode of the DMOS cell and therefore from encroaching into the channel zone.
  • the vertical type DMOS device (VDMOS) of the present invention is characterized by comprising a semiconductor slice of wafer operating entirely or partially as a drain region; a plurality of source regions, heavily doped with an impurity of a first type of conductivity, formed in the top portion of an epitaxially grown layer, lightly doped with an impurity of said first type of conductivity, grown on said wafer, each being formed inside distinct body regions, formed by moderately doping with an impurity of a second type of conductivity and diffusion; a gate electrode of polycrystalline silicon, formed on the surface of said epitaxially grown layer previously covered with an insulating layer of gate oxide, between adjacent body regions and superimposed to edges of the latter; a short region, heavily doped with an impurity of said second type of conductivity, entirely contained inside each of said body regions and whose perimeter coincides substantially with the perimeter of said gate electrode; a source electrode electrically in contact with both said source and short regions.
  • the substrate slice of wafer may itself constitute the drain region of the device in case of discrete type devices, in which case it will be preferably of heavily doped silicon and the drain electrode will be suitably formed on the rear of said wafer.
  • the wafer is preferably of n + silicon
  • the epitaxially grown layer is of n - silicon
  • the elemntary DMOS cells are n channel.
  • a p + silicon wafer is preferably utilized instead.
  • the DMOS structure of the present invention may also be utilized for forming integrated VDMOS transistors.
  • the drain region may be formed by a buried layer, the electrical contact with which may be brought to the surface by means of a sinker diffusion, according to known techniques.

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
US07/019,785 1986-03-06 1987-02-26 Self-aligned process for fabricating small DMOS cells Expired - Lifetime US4774198A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT83608A/86 1986-03-06
IT83608/86A IT1204243B (it) 1986-03-06 1986-03-06 Procedimento autoallineato per la fabbricazione di celle dmos di piccole dimensioni e dispositivi mos ottenuti mediante detto procedimento

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EP (1) EP0244366B1 (fr)
JP (1) JPS62222677A (fr)
DE (1) DE3778961D1 (fr)
IT (1) IT1204243B (fr)

Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4853345A (en) * 1988-08-22 1989-08-01 Delco Electronics Corporation Process for manufacture of a vertical DMOS transistor
US4892838A (en) * 1987-06-08 1990-01-09 U.S. Philips Corporation Method of manufacturing an insulated gate field effect transistor
US4914047A (en) * 1987-03-03 1990-04-03 Fuji Electric Co., Ltd. Method of producing insulated gate MOSFET employing polysilicon mask
US4931408A (en) * 1989-10-13 1990-06-05 Siliconix Incorporated Method of fabricating a short-channel low voltage DMOS transistor
US4970173A (en) * 1989-07-03 1990-11-13 Motorola, Inc. Method of making high voltage vertical field effect transistor with improved safe operating area
US4971921A (en) * 1987-09-28 1990-11-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US5032532A (en) * 1987-08-24 1991-07-16 Hitachi, Ltd. Method for fabricating insulated gate semiconductor device
US5034336A (en) * 1988-03-03 1991-07-23 Fuji Electric Co., Ltd. Method of producing insulated gate bipolar tranistor
US5118638A (en) * 1988-03-18 1992-06-02 Fuji Electric Co., Ltd. Method for manufacturing MOS type semiconductor devices
US5130272A (en) * 1989-07-24 1992-07-14 Sgs-Thomson Microelectronics S.R.L. Process for defining and forming an active region of very limited dimensions in a semiconductor layer
US5136349A (en) * 1989-08-30 1992-08-04 Siliconix Incorporated Closed cell transistor with built-in voltage clamp
US5141883A (en) * 1989-12-29 1992-08-25 Sgs-Thomson Microelectronics S.R.L. Process for the manufacture of power-mos semiconductor devices
US5155052A (en) * 1991-06-14 1992-10-13 Davies Robert B Vertical field effect transistor with improved control of low resistivity region geometry
US5164327A (en) * 1990-10-16 1992-11-17 Fuji Electric Co., Ltd. Method of manufacturing a mis-type semiconductor
US5179034A (en) * 1987-08-24 1993-01-12 Hitachi, Ltd. Method for fabricating insulated gate semiconductor device
US5202276A (en) * 1990-08-20 1993-04-13 Texas Instruments Incorporated Method of forming a low on-resistance DMOS vertical transistor structure
US5268586A (en) * 1992-02-25 1993-12-07 North American Philips Corporation Vertical power MOS device with increased ruggedness and method of fabrication
US5285094A (en) * 1987-08-24 1994-02-08 Hitachi, Ltd. Vertical insulated gate semiconductor device with less influence from the parasitic bipolar effect
US5342797A (en) * 1988-10-03 1994-08-30 National Semiconductor Corporation Method for forming a vertical power MOSFET having doped oxide side wall spacers
US5405794A (en) * 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
WO1995013693A1 (fr) * 1993-11-19 1995-05-26 Micrel, Inc. Grille a ouvertures en forme de diamant pour groupement cellulaire de transistors mos
US5451531A (en) * 1992-03-18 1995-09-19 Mitsubishi Denki Kabushiki Kaisha Method of fabricating an insulated gate semiconductor device
EP0735591A1 (fr) * 1995-03-31 1996-10-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Structure d'un dispositif DMOS et sa méthode de fabrication
US5567634A (en) * 1995-05-01 1996-10-22 National Semiconductor Corporation Method of fabricating self-aligned contact trench DMOS transistors
US5684319A (en) * 1995-08-24 1997-11-04 National Semiconductor Corporation Self-aligned source and body contact structure for high performance DMOS transistors and method of fabricating same
US5783474A (en) * 1995-02-17 1998-07-21 International Rectifier Corporation Reduced mask process for manufacture of MOS gated devices using dopant-enhanced-oxidation of semiconductor
US6051504A (en) * 1997-08-15 2000-04-18 International Business Machines Corporation Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma
EP1058303A1 (fr) * 1999-05-31 2000-12-06 STMicroelectronics S.r.l. Fabrication d'une structure VDMOS ayant des effets parasites réduits
US6200868B1 (en) * 1997-07-31 2001-03-13 Toyota Jidosha Kabushiki Kaisha Insulated gate type semiconductor device and process for producing the device
US6461529B1 (en) 1999-04-26 2002-10-08 International Business Machines Corporation Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme
US20030151092A1 (en) * 2002-02-11 2003-08-14 Feng-Tso Chien Power mosfet device with reduced snap-back and being capable of increasing avalanche-breakdown current endurance, and method of manafacturing the same
US20030190787A1 (en) * 2001-12-14 2003-10-09 Stmicroelectronics S.R.L. Process for realizing a channel scaled and small body gradient VDMOS for high current densities and low driving voltages
DE10355587B4 (de) * 2003-11-28 2007-05-24 Infineon Technologies Ag Verfahren zur Herstellung eines vertikalen Leistungs-Halbleitertransistors
US20070284754A1 (en) * 2006-05-12 2007-12-13 Ronald Wong Power MOSFET contact metallization
US20080258212A1 (en) * 2007-04-19 2008-10-23 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
US20090050960A1 (en) * 2004-05-13 2009-02-26 Vishay-Siliconix Stacked Trench Metal-Oxide-Semiconductor Field Effect Transistor Device
US7833863B1 (en) 2003-12-02 2010-11-16 Vishay-Siliconix Method of manufacturing a closed cell trench MOSFET
US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
CN107331617A (zh) * 2016-04-29 2017-11-07 北大方正集团有限公司 平面型vdmos器件的制作方法
CN115939178A (zh) * 2023-03-10 2023-04-07 广东芯聚能半导体有限公司 半导体结构及其制备方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01238172A (ja) * 1988-03-18 1989-09-22 Fuji Electric Co Ltd Ｍｏｓ型半導体素子の製造方法
US4998151A (en) * 1989-04-13 1991-03-05 General Electric Company Power field effect devices having small cell size and low contact resistance
DE69029942T2 (de) * 1990-10-16 1997-08-28 Cons Ric Microelettronica Verfahren zur Herstellung von MOS-Leistungstransistoren mit vertikalem Strom
US5182222A (en) * 1991-06-26 1993-01-26 Texas Instruments Incorporated Process for manufacturing a DMOS transistor
EP0658940A1 (fr) * 1993-11-23 1995-06-21 Siemens Aktiengesellschaft Elément semi-conducteur commandé par effet de champ
RU2189089C2 (ru) * 2000-08-24 2002-09-10 Государственное унитарное предприятие "Научно-производственное предприятие "Пульсар" Способ изготовления мощного дмоп-транзистора

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443931A (en) * 1982-06-28 1984-04-24 General Electric Company Method of fabricating a semiconductor device with a base region having a deep portion
US4466176A (en) * 1982-08-09 1984-08-21 General Electric Company Process for manufacturing insulated-gate semiconductor devices with integral shorts
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
US4630084A (en) * 1981-02-02 1986-12-16 Siemens Aktiengesellschaft Vertical mis-field effect transistor with low forward resistance
US4661838A (en) * 1985-10-24 1987-04-28 General Electric Company High voltage semiconductor devices electrically isolated from an integrated circuit substrate
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3240162C2 (de) * 1982-01-04 1996-08-01 Gen Electric Verfahren zum Herstellen eines doppelt-diffundierten Leistungs-MOSFET mit Source-Basis-Kurzschluß
JPS60196975A (ja) * 1984-08-24 1985-10-05 Nissan Motor Co Ltd 縦型ｍｏｓｆｅｔ
JPS6010677A (ja) * 1983-06-30 1985-01-19 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
JPS61156882A (ja) * 1984-12-28 1986-07-16 Toshiba Corp 二重拡散形絶縁ゲ−ト電界効果トランジスタ及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630084A (en) * 1981-02-02 1986-12-16 Siemens Aktiengesellschaft Vertical mis-field effect transistor with low forward resistance
US4443931A (en) * 1982-06-28 1984-04-24 General Electric Company Method of fabricating a semiconductor device with a base region having a deep portion
US4466176A (en) * 1982-08-09 1984-08-21 General Electric Company Process for manufacturing insulated-gate semiconductor devices with integral shorts
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
US4661838A (en) * 1985-10-24 1987-04-28 General Electric Company High voltage semiconductor devices electrically isolated from an integrated circuit substrate
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
"Les Limites de la resistance a L'etat passant des DMOS de puissance" by Pierre Aloisi of Motorola of Toulouse-France.
"The Optimization of ON-Resistance in Vertical DMOS Power Devices with Linear and Hexagonal Surface Geometries", by Kenneth Board, et al., appeared on IEEE Transactions on Electron Devices, vol. ED. 31, No. 1, Jan. 1984.
Les Limites de la resistance L tat passant des DMOS de puissance by Pierre Aloisi of Motorola of Toulouse France. *
The Optimization of ON Resistance in Vertical DMOS Power Devices with Linear and Hexagonal Surface Geometries , by Kenneth Board, et al., appeared on IEEE Transactions on Electron Devices, vol. ED. 31, No. 1, Jan. 1984. *

Cited By (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4914047A (en) * 1987-03-03 1990-04-03 Fuji Electric Co., Ltd. Method of producing insulated gate MOSFET employing polysilicon mask
US4892838A (en) * 1987-06-08 1990-01-09 U.S. Philips Corporation Method of manufacturing an insulated gate field effect transistor
US5179034A (en) * 1987-08-24 1993-01-12 Hitachi, Ltd. Method for fabricating insulated gate semiconductor device
US5670811A (en) * 1987-08-24 1997-09-23 Hitachi, Ltd. Vertical insulated gate semiconductor device having high current density and high reliability
US5032532A (en) * 1987-08-24 1991-07-16 Hitachi, Ltd. Method for fabricating insulated gate semiconductor device
US5285094A (en) * 1987-08-24 1994-02-08 Hitachi, Ltd. Vertical insulated gate semiconductor device with less influence from the parasitic bipolar effect
US4971921A (en) * 1987-09-28 1990-11-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US5034336A (en) * 1988-03-03 1991-07-23 Fuji Electric Co., Ltd. Method of producing insulated gate bipolar tranistor
US5118638A (en) * 1988-03-18 1992-06-02 Fuji Electric Co., Ltd. Method for manufacturing MOS type semiconductor devices
US4853345A (en) * 1988-08-22 1989-08-01 Delco Electronics Corporation Process for manufacture of a vertical DMOS transistor
US5342797A (en) * 1988-10-03 1994-08-30 National Semiconductor Corporation Method for forming a vertical power MOSFET having doped oxide side wall spacers
US4970173A (en) * 1989-07-03 1990-11-13 Motorola, Inc. Method of making high voltage vertical field effect transistor with improved safe operating area
US5130272A (en) * 1989-07-24 1992-07-14 Sgs-Thomson Microelectronics S.R.L. Process for defining and forming an active region of very limited dimensions in a semiconductor layer
US5136349A (en) * 1989-08-30 1992-08-04 Siliconix Incorporated Closed cell transistor with built-in voltage clamp
US4931408A (en) * 1989-10-13 1990-06-05 Siliconix Incorporated Method of fabricating a short-channel low voltage DMOS transistor
US5141883A (en) * 1989-12-29 1992-08-25 Sgs-Thomson Microelectronics S.R.L. Process for the manufacture of power-mos semiconductor devices
US5202276A (en) * 1990-08-20 1993-04-13 Texas Instruments Incorporated Method of forming a low on-resistance DMOS vertical transistor structure
US5164327A (en) * 1990-10-16 1992-11-17 Fuji Electric Co., Ltd. Method of manufacturing a mis-type semiconductor
US5155052A (en) * 1991-06-14 1992-10-13 Davies Robert B Vertical field effect transistor with improved control of low resistivity region geometry
US5268586A (en) * 1992-02-25 1993-12-07 North American Philips Corporation Vertical power MOS device with increased ruggedness and method of fabrication
US5374571A (en) * 1992-02-25 1994-12-20 North American Philips Corporation Vertical power MOS device with increased ruggedness and method of fabrication
US5451531A (en) * 1992-03-18 1995-09-19 Mitsubishi Denki Kabushiki Kaisha Method of fabricating an insulated gate semiconductor device
WO1995013693A1 (fr) * 1993-11-19 1995-05-26 Micrel, Inc. Grille a ouvertures en forme de diamant pour groupement cellulaire de transistors mos
US5405794A (en) * 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US5783474A (en) * 1995-02-17 1998-07-21 International Rectifier Corporation Reduced mask process for manufacture of MOS gated devices using dopant-enhanced-oxidation of semiconductor
EP0735591A1 (fr) * 1995-03-31 1996-10-02 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Structure d'un dispositif DMOS et sa méthode de fabrication
US5838042A (en) * 1995-03-31 1998-11-17 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno DMOS device structure, and related manufacturing process
US6218228B1 (en) 1995-03-31 2001-04-17 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno DMOS device structure, and related manufacturing process
US5567634A (en) * 1995-05-01 1996-10-22 National Semiconductor Corporation Method of fabricating self-aligned contact trench DMOS transistors
US5684319A (en) * 1995-08-24 1997-11-04 National Semiconductor Corporation Self-aligned source and body contact structure for high performance DMOS transistors and method of fabricating same
US6200868B1 (en) * 1997-07-31 2001-03-13 Toyota Jidosha Kabushiki Kaisha Insulated gate type semiconductor device and process for producing the device
US6051504A (en) * 1997-08-15 2000-04-18 International Business Machines Corporation Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma
US6461529B1 (en) 1999-04-26 2002-10-08 International Business Machines Corporation Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme
EP1058303A1 (fr) * 1999-05-31 2000-12-06 STMicroelectronics S.r.l. Fabrication d'une structure VDMOS ayant des effets parasites réduits
US6391723B1 (en) 1999-05-31 2002-05-21 Stmicroelectronics S.R.L. Fabrication of VDMOS structure with reduced parasitic effects
US20030190787A1 (en) * 2001-12-14 2003-10-09 Stmicroelectronics S.R.L. Process for realizing a channel scaled and small body gradient VDMOS for high current densities and low driving voltages
US20030151092A1 (en) * 2002-02-11 2003-08-14 Feng-Tso Chien Power mosfet device with reduced snap-back and being capable of increasing avalanche-breakdown current endurance, and method of manafacturing the same
DE10355587B4 (de) * 2003-11-28 2007-05-24 Infineon Technologies Ag Verfahren zur Herstellung eines vertikalen Leistungs-Halbleitertransistors
US7833863B1 (en) 2003-12-02 2010-11-16 Vishay-Siliconix Method of manufacturing a closed cell trench MOSFET
US8183629B2 (en) 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
US20090050960A1 (en) * 2004-05-13 2009-02-26 Vishay-Siliconix Stacked Trench Metal-Oxide-Semiconductor Field Effect Transistor Device
US20070284754A1 (en) * 2006-05-12 2007-12-13 Ronald Wong Power MOSFET contact metallization
US8471390B2 (en) 2006-05-12 2013-06-25 Vishay-Siliconix Power MOSFET contact metallization
US8697571B2 (en) 2006-05-12 2014-04-15 Vishay-Siliconix Power MOSFET contact metallization
US20080258212A1 (en) * 2007-04-19 2008-10-23 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
US8368126B2 (en) 2007-04-19 2013-02-05 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
US8883580B2 (en) 2007-04-19 2014-11-11 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
US10032901B2 (en) 2009-10-30 2018-07-24 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
CN107331617A (zh) * 2016-04-29 2017-11-07 北大方正集团有限公司 平面型vdmos器件的制作方法
CN115939178A (zh) * 2023-03-10 2023-04-07 广东芯聚能半导体有限公司 半导体结构及其制备方法

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EP0244366A3 (en) 1988-01-07
JPS62222677A (ja) 1987-09-30
IT8683608A0 (it) 1986-03-06
DE3778961D1 (de) 1992-06-17
EP0244366B1 (fr) 1992-05-13
IT1204243B (it) 1989-03-01
EP0244366A2 (fr) 1987-11-04

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